FinFET, source/drain region shapes fins on the silicon surface

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H01L2924/13067

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

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H01L2924/13067FinFET, source/drain region shapes fins on the silicon surface

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure integrating air gaps and methods of...
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- Issue date Aug 20, 2024
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package including a plurality of semiconductor chips
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- Issue date Aug 6, 2024
- Samsung Electronics Co., Ltd.
- Manho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a necked semiconductor body and method...
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- Issue date Jun 18, 2024
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
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- Issue date Feb 6, 2024
- Apple Inc.
- Harald Pretl
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- Issue date Nov 7, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a necked semiconductor body and method...
- Patent number 11,784,257
- Issue date Oct 10, 2023
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
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- Issue date Apr 25, 2023
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure integrating air gaps and methods of...
- Patent number 11,600,699
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oscillator with fin field-effect transistor (FinFET) resonator
- Patent number 11,323,070
- Issue date May 3, 2022
- Apple Inc.
- Harald Pretl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a necked semiconductor body and method...
- Patent number 11,164,975
- Issue date Nov 2, 2021
- Intel Corporation
- Bernhard Sell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET radiation dosimeter
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- Issue date Oct 26, 2021
- International Business Machines Corporation
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- G01 - MEASURING TESTING
Information Patent Grant
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3D semiconductor device and structure
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- Issue date Aug 10, 2021
- Monolithic 3D Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region
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- Issue date Jul 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device and method for fabricating the same
- Patent number 10,978,422
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor device and method for fabricating the same
- Patent number 10,665,569
- Issue date May 26, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside isolation for integrated circuit
- Patent number 10,573,715
- Issue date Feb 25, 2020
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-phase power converter with common connections
- Patent number 10,573,631
- Issue date Feb 25, 2020
- Infineon Technologies Americas Corp.
- Eung San Cho
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor device having a shaped epitaxial region
- Patent number 10,505,042
- Issue date Dec 10, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 10,497,797
- Issue date Dec 3, 2019
- United Microelectronics Corp.
- Shih-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,446,655
- Issue date Oct 15, 2019
- Renesas Electronics Corporation
- Tetsuya Watanabe
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Systems and methods for microelectronics fabrication and packaging...
- Patent number 10,354,950
- Issue date Jul 16, 2019
- Ferric Inc.
- Noah Sturcken
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
FinFETs having strained channels, and methods of fabricating finFET...
- Patent number 10,355,020
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Qing Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Graphene contacts on source/drain regions of FinFET devices
- Patent number 10,325,812
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Ajey Poovannummoottil Jacob
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having semiconductor-metal composite gate electrodes co...
- Patent number 10,256,099
- Issue date Apr 9, 2019
- SanDisk Technologies LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-gap gate sidewall spacer and method
- Patent number 10,249,728
- Issue date Apr 2, 2019
- GLOBALFOUNDRIES Inc.
- Daniel Chanemougame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased source/drain area
- Patent number 10,242,983
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonplanar device with thinned lower body portion and method of fabr...
- Patent number 10,236,356
- Issue date Mar 19, 2019
- Intel Corporation
- Uday Shah
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device
- Patent number 10,164,036
- Issue date Dec 25, 2018
- RENESAS ELECTRONICS CORPORATION
- Tetsuya Watanabe
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF...
- Publication number 20240379761
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- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20240222509
- Publication date Jul 4, 2024
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oscillator with Fin Field-Effect Transistor (FinFET) Resonator
- Publication number 20240128929
- Publication date Apr 18, 2024
- Apple Inc.
- Harald Pretl
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND EQUIPMENT
- Publication number 20240006389
- Publication date Jan 4, 2024
- Canon Kabushiki Kaisha
- HIROAKI KOBAYASHI
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SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20230013575
- Publication date Jan 19, 2023
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF...
- Publication number 20220359657
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Ching WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGE INCLUDING A PLURALITY OF SEMICONDUCTOR CHIPS
- Publication number 20220352128
- Publication date Nov 3, 2022
- Samsung Electronics Co., Ltd.
- Manho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oscillator with Fin Field-Effect Transistor (FinFET) Resonator
- Publication number 20220337191
- Publication date Oct 20, 2022
- Apple Inc.
- Harald Pretl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...
- Publication number 20220005953
- Publication date Jan 6, 2022
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor Device Having a Shaped Epitaxial Region
- Publication number 20210351298
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE
- Publication number 20210257357
- Publication date Aug 19, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
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3D SEMICONDUCTOR DEVICE AND STRUCTURE
- Publication number 20210167056
- Publication date Jun 3, 2021
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
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VERTICAL TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20200286857
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Sheng YUN
- H01 - BASIC ELECTRIC ELEMENTS
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Semiconductor Device Having a Shaped Epitaxial Region
- Publication number 20200006564
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
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SEMICONDUCTOR DEVICE
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- Publication date Feb 28, 2019
- RENESAS ELECTRONICS CORPORATION
- Tetsuya WATANABE
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MULTI-PHASE POWER CONVERTER WITH COMMON CONNECTIONS
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- Publication date Dec 6, 2018
- Infineon Technologies Americas Corp.
- Eung San Cho
- H01 - BASIC ELECTRIC ELEMENTS
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VERTICAL TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20180342480
- Publication date Nov 29, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Sheng YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE ISOLATION FOR INTEGRATED CIRCUIT
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- Publication date Nov 15, 2018
- Intel Corporation
- AARON D. LILAK
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METHOD OF DESIGNING A LAYOUT OF A SEMICONDUCTOR DEVICE, AND A SEMIC...
- Publication number 20180174953
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- Samsung Electronics Co., Ltd.
- SEON-AH NAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PHASE POWER CONVERTER WITH COMMON CONNECTIONS
- Publication number 20180102349
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- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- Publication number 20180069001
- Publication date Mar 8, 2018
- International Business Machines Corporation
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- Ferric Inc.
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MULTIGATE RESONANT CHANNEL TRANSISTOR
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- H01 - BASIC ELECTRIC ELEMENTS
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Gate Contact Structure for FinFET
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- Publication date Sep 11, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
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Information Patent Application
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...
- Publication number 20140239358
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- Uday Shah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
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- Kyung-In CHOI
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Information Patent Application
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...
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DRAM WITH NANOFIN TRANSISTORS
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- Leonard Forbes
- B82 - NANO-TECHNOLOGY

FinFET, source/drain region shapes fins on the silicon surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having a shaped epitaxial region with shaping...

Semiconductor device structure integrating air gaps and methods of...

Semiconductor package including a plurality of semiconductor chips

Semiconductor device having a necked semiconductor body and method...

Oscillator with fin field-effect transistor (FinFET) resonator

Semiconductor structure and forming method thereof

Semiconductor device having a necked semiconductor body and method...

Semiconductor structure and forming method thereof

Semiconductor device structure integrating air gaps and methods of...

Oscillator with fin field-effect transistor (FinFET) resonator

Semiconductor device having a necked semiconductor body and method...

FinFET radiation dosimeter

3D semiconductor device and structure

3D semiconductor device and structure

Semiconductor device having a shaped epitaxial region

Vertical transistor device and method for fabricating the same

Vertical transistor device and method for fabricating the same

Backside isolation for integrated circuit

Multi-phase power converter with common connections

Semiconductor device having a shaped epitaxial region

Semiconductor structure and manufacturing method thereof

Semiconductor device

Systems and methods for microelectronics fabrication and packaging...

FinFETs having strained channels, and methods of fabricating finFET...

Graphene contacts on source/drain regions of FinFET devices

Transistors having semiconductor-metal composite gate electrodes co...

Air-gap gate sidewall spacer and method

Semiconductor device with increased source/drain area

Nonplanar device with thinned lower body portion and method of fabr...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF...

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

Oscillator with Fin Field-Effect Transistor (FinFET) Resonator

SEMICONDUCTOR DEVICE AND EQUIPMENT

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

SEMICONDUCTOR DEVICE STRUCTURE INTEGRATING AIR GAPS AND METHODS OF...

SEMICONDUCTOR PACKAGE INCLUDING A PLURALITY OF SEMICONDUCTOR CHIPS

Oscillator with Fin Field-Effect Transistor (FinFET) Resonator

SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD...

Semiconductor Device Having a Shaped Epitaxial Region

3D SEMICONDUCTOR DEVICE AND STRUCTURE

3D SEMICONDUCTOR DEVICE AND STRUCTURE

VERTICAL TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Semiconductor Device Having a Shaped Epitaxial Region

SEMICONDUCTOR DEVICE

MULTI-PHASE POWER CONVERTER WITH COMMON CONNECTIONS

VERTICAL TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME

BACKSIDE ISOLATION FOR INTEGRATED CIRCUIT

METHOD OF DESIGNING A LAYOUT OF A SEMICONDUCTOR DEVICE, AND A SEMIC...

MULTI-PHASE POWER CONVERTER WITH COMMON CONNECTIONS

SEMICONDUCTOR DEVICE WITH INCREASED SOURCE/DRAIN AREA

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

Methods for Microelectronics Fabrication and Packaging Using a Magn...

MULTIGATE RESONANT CHANNEL TRANSISTOR

Gate Contact Structure for FinFET

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

SEMICONDUCTOR DEVICES INCLUDING GATE PATTERN, MULTI-CHANNEL ACTIVE...

NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABR...

DRAM WITH NANOFIN TRANSISTORS