for deposition from the gas phase

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CPC
H01L21/76876

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76876for deposition from the gas phase

Industries

Patents Grantslast 30 patents

Information Patent Grant
Annealed seed layer to improve ferroelectric properties of memory l...
- Patent number 12,324,161
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with carbon-...
- Patent number 12,300,541
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Hao Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact formed using bottom-...
- Patent number 12,266,688
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nucleation-free tungsten deposition
- Patent number 12,237,221
- Issue date Feb 25, 2025
- Lam Research Corporation
- Sema Ermez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses for forming semiconductor devices containin...
- Patent number 12,217,965
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Fei Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Contact metallization process
- Patent number 12,191,199
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tien-Pei Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity tungsten film and method of manufacture
- Patent number 12,191,198
- Issue date Jan 7, 2025
- Applied Materials, Inc.
- Feihu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 12,191,201
- Issue date Jan 7, 2025
- Mitsubishi Electric Corporation
- Masahiro Totsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for minimizing feature-to-feature gap fill height variations
- Patent number 12,191,200
- Issue date Jan 7, 2025
- Applied Materials, Inc.
- Jiajie Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten molybdenum structures
- Patent number 12,159,804
- Issue date Dec 3, 2024
- Applied Materials, Inc.
- Xi Cen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bottom-up formation of contact plugs
- Patent number 12,131,949
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom-up formation of contact plugs
- Patent number 12,125,747
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor device structure
- Patent number 12,107,012
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shang-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interconnection structure and method of...
- Patent number 12,080,591
- Issue date Sep 3, 2024
- Renesas Electronics Corporation
- Kazuyuki Omori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,034,062
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten gapfill using molybdenum co-flow
- Patent number 12,014,956
- Issue date Jun 18, 2024
- Applied Materials, Inc.
- Xi Cen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor memory device and manufacturing method thereof
- Patent number 12,010,837
- Issue date Jun 11, 2024
- Kioxia Corporation
- Yusuke Shima
- G11 - INFORMATION STORAGE
Information Patent Grant
High step coverage tungsten deposition
- Patent number 12,002,679
- Issue date Jun 4, 2024
- Lam Research Corporation
- Michael Bowes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing method and semiconductor device
- Patent number 11,978,665
- Issue date May 7, 2024
- Kioxia Corporation
- Kenichi Ide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition on 3D NAND structures
- Patent number 11,972,952
- Issue date Apr 30, 2024
- Lam Research Corporation
- Ruopeng Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition of metal films with tungsten liner
- Patent number 11,948,836
- Issue date Apr 2, 2024
- Applied Materials, Inc.
- Yu Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming graphene barrier layer in interconnect structure
- Patent number 11,929,326
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shin-Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed seed layer to improve ferroelectric properties of memory l...
- Patent number 11,917,831
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Song-Fu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and devices for subtractive self-alignment
- Patent number 11,908,696
- Issue date Feb 20, 2024
- Applied Materials, Inc.
- He Ren
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for depositing a molybdenum metal film over a dielectric su...
- Patent number 11,908,736
- Issue date Feb 20, 2024
- ASM IP Holding B.V.
- Bhushan Zope
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicide film nucleation
- Patent number 11,901,182
- Issue date Feb 13, 2024
- Applied Materials, Inc.
- Xuebin Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Feature fill with nucleation inhibition
- Patent number 11,901,227
- Issue date Feb 13, 2024
- Lam Research Corporation
- Anand Chandrashekar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Storage node contact structure of a memory device
- Patent number 11,877,433
- Issue date Jan 16, 2024
- United Microelectronics Corp.
- Pin-Hong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with buried interconnect conductors
- Patent number 11,854,902
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for cobalt metalization
- Patent number 11,854,876
- Issue date Dec 26, 2023
- ASM IP Holding B.V.
- Chiyu Zhu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
AREA SELECTIVE DEPOSITION OF METALS FOR ELECTRONIC DEVICES
- Publication number 20250154643
- Publication date May 15, 2025
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LOW RESISTANCE LINER
- Publication number 20250157932
- Publication date May 15, 2025
- TOKYO ELECTRON LIMITED
- Tek Po Rinus Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION-FREE DEPOSITION
- Publication number 20250132201
- Publication date Apr 24, 2025
- LAM RESEARCH CORPORATION
- Sema ERMEZ
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE CAPPING FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS
- Publication number 20250079239
- Publication date Mar 6, 2025
- Applied Materials, Inc.
- Jiang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING RESISTANCE OF CONTACT
- Publication number 20250069949
- Publication date Feb 27, 2025
- Shanghai Huali Integrated Circuit Corporation
- Zhaoqin ZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNGSTEN MOLYBDENUM STRUCTURES
- Publication number 20250038051
- Publication date Jan 30, 2025
- Applied Materials, Inc.
- Xi CEN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20250038049
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEATURE FILL WITH NUCLEATION INHIBITION
- Publication number 20250038050
- Publication date Jan 30, 2025
- LAM RESEARCH CORPORATION
- Son Vo Nam TRAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GRADIENT LINER IN METAL FILL
- Publication number 20250022751
- Publication date Jan 16, 2025
- LAM RESEARCH CORPORATION
- Sang-Hyeob LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED TUNGSTEN GALVANIC CORROSION IN WET CLEANING FOR ADVANCED SE...
- Publication number 20250006554
- Publication date Jan 2, 2025
- Intel Corporation
- Ramanan Ehamparam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT METALLIZATION PROCESS
- Publication number 20240395611
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien-Pei CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALL-TUNGSTEN SCHEME FOR SOURCE/DRAIN CONTACT, SOURCE/DRAIN VIA, AND...
- Publication number 20240395618
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20240387260
- Publication date Nov 21, 2024
- NANYA TECHNOLOGY CORPORATION
- Cheng Yan JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...
- Publication number 20240387166
- Publication date Nov 21, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...
- Publication number 20240387165
- Publication date Nov 21, 2024
- NANYA TECHNOLOGY CORPORATION
- TSE-YAO HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDING REDISTRIBUTION LAYER METAL TRACES IN A POLYMERIC DIELECTRIC
- Publication number 20240379411
- Publication date Nov 14, 2024
- Applied Materials, Inc.
- Peng SOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING HIGH ASPECT RATIO OPENINGS IN A SEMICONDUCTOR DEVI...
- Publication number 20240379424
- Publication date Nov 14, 2024
- Western Digital Technologies, Inc.
- Bing ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM-UP FORMATION OF CONTACT PLUGS
- Publication number 20240371691
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier Free Tungsten Liner in Contact Plugs and The Method Forming...
- Publication number 20240355740
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240339395
- Publication date Oct 10, 2024
- Samsung Electronics Co., Ltd.
- Byungchul KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-THIN LAYERS BY SELECTIVE PASSIVATION
- Publication number 20240321633
- Publication date Sep 26, 2024
- Applied Materials, Inc.
- Zhiyuan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR
- Publication number 20240321634
- Publication date Sep 26, 2024
- Sumitomo Electric Industries, Ltd.
- Yukihiro TSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES
- Publication number 20240304495
- Publication date Sep 12, 2024
- Applied Materials, Inc.
- Tsung-Han Yang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM
- Publication number 20240297075
- Publication date Sep 5, 2024
- LAM RESEARCH CORPORATION
- Shruti Vivek THOMBARE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MAKING HIGH ASPECT RATIO OPENINGS USING MULTIPLE CLADDING...
- Publication number 20240290622
- Publication date Aug 29, 2024
- SANDISK TECHNOLOGIES LLC
- Roshan Jayakhar TIRUKKONDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW STRESS TUNGSTEN LAYER DEPOSITION
- Publication number 20240266215
- Publication date Aug 8, 2024
- Applied Materials, Inc.
- Xi CEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION ON 3D NAND STRUCTURES
- Publication number 20240266177
- Publication date Aug 8, 2024
- LAM RESEARCH CORPORATION
- Ruopeng Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240268109
- Publication date Aug 8, 2024
- KIOXIA Corporation
- Yusuke Shima
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240250153
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yi LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE BARRIER LAYER
- Publication number 20240213157
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shin-Yi YANG
- H01 - BASIC ELECTRIC ELEMENTS

for deposition from the gas phase

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Annealed seed layer to improve ferroelectric properties of memory l...

Structure and formation method of semiconductor device with carbon-...

Semiconductor device with source/drain contact formed using bottom-...

Nucleation-free tungsten deposition

Methods and apparatuses for forming semiconductor devices containin...

Contact metallization process

Low resistivity tungsten film and method of manufacture

Semiconductor device and method for manufacturing semiconductor device

Methods for minimizing feature-to-feature gap fill height variations

Tungsten molybdenum structures

Bottom-up formation of contact plugs

Bottom-up formation of contact plugs

Method for forming fin field effect transistor device structure

Semiconductor device having interconnection structure and method of...

Semiconductor device structure and method for forming the same

Tungsten gapfill using molybdenum co-flow

Semiconductor memory device and manufacturing method thereof

High step coverage tungsten deposition

Semiconductor manufacturing method and semiconductor device

Atomic layer deposition on 3D NAND structures

Deposition of metal films with tungsten liner

Method of forming graphene barrier layer in interconnect structure

Annealed seed layer to improve ferroelectric properties of memory l...

Methods and devices for subtractive self-alignment

Methods for depositing a molybdenum metal film over a dielectric su...

Silicide film nucleation

Feature fill with nucleation inhibition

Storage node contact structure of a memory device

Integrated circuits with buried interconnect conductors

Systems and methods for cobalt metalization

Patents Applicationslast 30 patents

AREA SELECTIVE DEPOSITION OF METALS FOR ELECTRONIC DEVICES

LOW RESISTANCE LINER

NUCLEATION-FREE DEPOSITION

SELECTIVE CAPPING FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

METHOD FOR REDUCING RESISTANCE OF CONTACT

TUNGSTEN MOLYBDENUM STRUCTURES

INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF

FEATURE FILL WITH NUCLEATION INHIBITION

GRADIENT LINER IN METAL FILL

REDUCED TUNGSTEN GALVANIC CORROSION IN WET CLEANING FOR ADVANCED SE...

CONTACT METALLIZATION PROCESS

ALL-TUNGSTEN SCHEME FOR SOURCE/DRAIN CONTACT, SOURCE/DRAIN VIA, AND...

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...

SEMICONDUCTOR DEVICE WITH POROUS LAYER AND METHOD FOR FABRICATING T...

EMBEDDING REDISTRIBUTION LAYER METAL TRACES IN A POLYMERIC DIELECTRIC

METHOD OF MAKING HIGH ASPECT RATIO OPENINGS IN A SEMICONDUCTOR DEVI...

BOTTOM-UP FORMATION OF CONTACT PLUGS

Barrier Free Tungsten Liner in Contact Plugs and The Method Forming...

SEMICONDUCTOR DEVICE

ULTRA-THIN LAYERS BY SELECTIVE PASSIVATION

TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR

HYDROGEN PLASMA TREATMENT FOR FORMING LOGIC DEVICES

LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM

METHOD OF MAKING HIGH ASPECT RATIO OPENINGS USING MULTIPLE CLADDING...

LOW STRESS TUNGSTEN LAYER DEPOSITION

ATOMIC LAYER DEPOSITION ON 3D NAND STRUCTURES

SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

GRAPHENE BARRIER LAYER