FEATURE FILL WITH NUCLEATION INHIBITION

Abstract

Provided herein are methods of filling features with metal including inhibition of metal nucleation. One aspect of the disclosure relates to a method including providing a substrate having a feature and field regions, wherein the feature is to be filled with metal, the feature including feature surfaces and a feature opening; performing an inhibition treatment to inhibit metal deposition on at least some of the feature surfaces; after performing the inhibition treatment, performing a first chemical vapor deposition (CVD) operation including exposing the feature to a metal precursor and hydrogen (H2); after performing the first CVD operation, performing a de-inhibition treatment to decrease inhibition; and after decreasing inhibition, performing a second CVD operation to deposit metal in the feature and/or on the field regions.

Description

BACKGROUND

Deposition of metals in features is an integral part of many semiconductor fabrication processes. The deposited metal films may be used for horizontal interconnects, vias between adjacent metal layers, and contacts between metal layers and devices. In an example of deposition, a tungsten (W) layer may be deposited on a titanium nitride (TiN) barrier layer to form a TiN/W bilayer by a chemical vapor deposition (CVD) process using tungsten hexafluoride (WF₆) However, as devices shrink and more complex patterning schemes are utilized in the industry, deposition of thin metal films becomes a challenge. The continued decrease in feature size and film thickness bring various challenges to metal film stacks including filling features with void free film.

The background description provided herein is for the purposes of generally presenting the context of the disclosure. Work of the presently named inventors, to the extent it is described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

SUMMARY

Provided herein are methods of filling features with metal including inhibition of metal nucleation. According to various embodiments, the methods include performing a de-inhibition operation to lessen or remove inhibition effects. In some embodiments, a de-inhibition operation is performed to tune an inhibition profile in a feature. In some embodiments, a de-inhibition operation is performed to lessen or remove inhibition on field regions of a substrate. The de-inhibition treatment may involve exposure to hydrogen (H₂) gas, or a plasma generated from H₂ gas without concurrent exposure to reactants such as a metal precursor or nitrogen-containing inhibition gas or plasma. In some embodiments, exposure to an inert gas such as argon (Ar) is performed before or after a de-inhibition treatment.

One aspect of the disclosure relates to a method including providing a substrate having a feature and field regions, wherein the feature is to be filled with metal, the feature including feature surfaces and a feature opening; performing an inhibition treatment to inhibit metal deposition on at least some of the feature surfaces; after performing the inhibition treatment, performing a first chemical vapor deposition (CVD) operation including exposing the feature to a metal precursor and hydrogen (H₂); after performing the first CVD operation, performing a de-inhibition treatment to decrease inhibition; and after decreasing inhibition, performing a second CVD operation to deposit metal in the feature and/or on the field regions.

In some embodiments, the de-inhibition treatment includes exposing the feature to H₂ gas or a plasma generated from H₂ gas. In some such embodiments, the method further includes, before and/or after performing the de-inhibition treatment, exposing the feature to an argon gas or plasma with no reactive gas or plasma species.

In some embodiments, the feature surfaces include sidewall surfaces and the inhibition treatment preferentially inhibits metal deposition on sidewall surfaces closer to the feature opening than further within the feature. In some embodiments, the first CVD operation decreases inhibition without completely removing the inhibition.

In some embodiments, the first CVD operation partially fills the feature. In some such embodiments, the de-inhibition treatment completely removes any remaining inhibition from the feature. In some embodiments, the de-inhibition treatment removes inhibition from the field regions. In some embodiments, the de-inhibition treatment desorbs nitrogen from feature surfaces and/or field regions.

According to various embodiments, the metal may be one of tungsten (W), molybdenum (Mo), ruthenium (Ru), and cobalt (Co).

Another aspect of the disclosure relates to method including providing a substrate having a plurality of features separated by field regions, wherein the plurality of features are to be filled with metal, performing an inhibition treatment to inhibit metal deposition within the plurality of features and on the field regions: depositing metal in the plurality of features; and after depositing metal in the plurality of features, performing a de-inhibition treatment to decrease inhibition on the field regions.

In some embodiments, the method further includes depositing an overburden layer on the field regions after performing the de-inhibition treatment.

In some embodiments, the de-inhibition treatment includes exposing the feature to H₂ gas or a plasma generated from H₂ gas. In some embodiments, the method further includes, before and/or after performing the de-inhibition treatment, exposing the feature to an argon gas or plasma with no reactive gas or plasma species.

These and other aspects of the disclosure are discussed further below with reference to the drawings.

BRIEF DESCRIPTION OF FIGURES

FIGS. 1A and 1B are schematic examples of material stacks that include a conductive metal layer according to various embodiments.

FIGS. 2A-2K are schematic examples of various structures into which a metal fill layer may be deposited in accordance with disclosed embodiments.

FIG. 3A is a process flow diagram illustrating operations in filling a structure with a metal according to various embodiments.

FIG. 3B shows a schematic of a cross-section of feature at various stages in according to an embodiment of the process in FIG. 3A.

FIG. 4 shows a schematic of a cross-section of feature before and after a de-inhibition operation.

FIG. 5 shows an example of a process flow diagram illustrating operations in a method of filling a feature with metal.

FIG. 6 shows an example of a process flow diagram illustrating certain operations in a method of inhibiting a surface with a reset.

FIG. 7 show a schematic of a process system in accordance with certain embodiments.

FIG. 8 shows a schematic of a processing station in accordance with certain embodiments.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth to provide a thorough understanding of the presented embodiments. The disclosed embodiments may be practiced without some or all these specific details. In other instances, well-known process operations have not been described in detail to not unnecessarily obscure the disclosed embodiments. While the disclosed embodiments will be described in conjunction with the specific embodiments, it will be understood that it is not intended to limit the disclosed embodiments.

Provided herein are methods of filling features with metal such as tungsten (W), molybdenum (Mo), cobalt (Co), and ruthenium (Ru) that may be used for logic and memory applications. FIGS. 1A and 1B are schematic examples of material stacks that include a conductive metal layer according to various embodiments. In the example of FIG. 1A, a substrate 102 has a conductive metal layer 108 deposited thereon. The substrate 102 may be a silicon or other semiconductor wafer, e.g., a 200-mm wafer, a 300-mm wafer, or a 450-mm wafer, including wafers having one or more layers of material, such as dielectric, conducting, or semi-conducting material deposited thereon. The methods may also be applied to form metallization stack structures on other substrates, such as glass, plastic, and the like.

In FIG. 1A, a dielectric layer 104 is on the substrate 102. The dielectric layer 104 may be deposited directly on a semiconductor (e.g., Si) surface of the substrate 102, or there may be any number of intervening layers. Examples of dielectric layers include doped and undoped silicon oxide, silicon nitride, and aluminum oxide layers, with specific examples including doped or undoped layers s SiO₂ and Al₂O₃. Also, in FIG. 1A, a diffusion barrier layer 106 is disposed between the conductive metal layer 108 and the dielectric layer 104. Examples of diffusion barrier layers including titanium nitride (TiN), titanium/titanium nitride (Ti/TiN), tungsten nitride (WN), and tungsten carbon nitride (WCN). Further examples of diffusion barriers are multi-component Mo-containing films such as molybdenum nitride (MoN). The conductive metal layer 108 is the main conductor of the structure. In some embodiments, the conductive metal layer 108 may include multiple bulk layers deposited at different conditions. The conductive metal layer 108 may or may not include a nucleation layer, e.g., the conductive metal layer 108 may include a W bulk layer deposited on W nucleation layer. In some embodiments, a metal layer of one metal (e.g., Mo) may be deposited on a thin growth initiation layer of another metal (e.g., W).

FIG. 1B shows another example of a material stack. In this example, the stack includes the substrate 102, dielectric layer 104, with conductive metal layer 108 deposited directly on the dielectric layer 104, without an intervening diffusion barrier layer. The conductive metal layer 108 is as described with respect to FIG. 1A.

While FIGS. 1A and 1B show examples of metallization stacks, the methods and resulting stacks are not so limited. For example, in some embodiments, the metal conductive layer may be deposited directly on a Si or other semiconductor substrate, with or without a nucleation or initiation layer. FIGS. 1A and 1B illustrate examples of order of materials in particular stacks and may be used with any appropriate architecture and application, with examples of different applications and architectures described further below with respect to FIGS. 2A-K.

The methods described herein are performed on a substrate that may be housed in a chamber. The substrate may be a silicon or other semiconductor wafer, e.g., a 200-mm wafer, a 300-mm wafer, or a 450-mm wafer, including wafers having one or more layers of material, such as dielectric, conducting, or semi-conducting material deposited thereon. The methods are not limit to semiconductor substrates and may be performed to fill any feature with a metal-containing material.

Substrates may have features such as via or contact holes, which may be characterized by one or more of narrow and/or re-entrant openings, constrictions within the feature, and high aspect ratios. A feature may be formed in one or more of the above described layers. For example, the feature may be formed at least partially in a dielectric layer. In some embodiments, a feature may have an aspect ratio of at least about 2:1, at least about 4:1, at least about 6:1, at least about 10:1, at least about 25:1, or higher. One example of a feature is a hole or via in a semiconductor substrate or a layer on the substrate.

FIG. 2A depicts a schematic example of a DRAM architecture including a metal buried word line (bWL) 208 in a silicon substrate 202. The metal bWL is formed in a trench etched in the silicon substrate 202. Lining the trench is a conformal barrier layer 206 and an insulating layer 204 that is disposed between the conformal barrier layer 206 and the silicon substrate 202. In the example of FIG. 2A, the insulating layer 204 may be a gate oxide layer, formed from a high-k dielectric material such as a silicon oxide or silicon nitride material. In some embodiments disclosed herein the conformal barrier layer is TiN or tungsten-containing layer. In some embodiments, one or both of layers 204 and 206 is not present.

The bWL structure shown in FIG. 2A is one example of an architecture that includes a conductive metal fill layer. During fabrication of the bWL, a conductive metal film is deposited into a feature that may be defined by an etched recess in the silicon substrate 202 that is conformally lined with layers 206 and 204, if present.

FIGS. 2B-2H are additional schematic examples of various structures into which a metal fill layer may be deposited in accordance with disclosed embodiments. FIG. 2B shows an example of a cross-sectional depiction of a vertical feature 201 to be filled with metal. The feature can include a feature hole 205 in a substrate 202. The hole 205 or other feature may have a dimension near the opening, e.g., an opening diameter or line width of between about 10 nm to 500 nm, for example between about 25 nm and about 300 nm. The feature hole 205 can be referred to as an unfilled feature or simply a feature. The feature 201, and any feature, may be characterized in part by an axis 218 that extends through the length of the feature, with vertically oriented features having vertical axes and horizontally oriented features having horizontal axes.

In some embodiments, features are word line features in a 3D NAND structure. For example, a substrate may include a word line structure having an arbitrary number of word lines (e.g., 50 to 150) with vertical channels at least 200 Å deep. Another example is a trench in a substrate or layer. Features may be of any depth. In various embodiments, the feature may have an under-layer, such as a barrier layer or adhesion layer. Non-limiting examples of under-layers include dielectric layers and conducting layers, e.g., silicon oxides, silicon nitrides, silicon carbides, metal oxides, metal nitrides, metal carbides, and metal layers.

FIG. 2C shows an example of a feature 201 that has a re-entrant profile. A re-entrant profile is a profile that narrows from a bottom, closed end, or interior of the feature to the feature opening. According to various implementations, the profile may narrow gradually and/or include an overhang at the feature opening. FIG. 2C shows an example of the latter, with an under-layer 213 lining the sidewall or interior surfaces of the feature hole 105. The under-layer 213 can be for example, a diffusion barrier layer, an adhesion layer, a nucleation layer, a combination of thereof, or any other applicable material. Non-limiting examples of under-layers can include dielectric layers and conducting layers, e.g., silicon oxides, silicon nitrides, silicon carbides, metal oxides, metal nitrides, metal carbides, and metal layers. In particular implementations, an under-layer can be one or more of titanium, titanium nitride, tungsten nitride, titanium aluminide, tungsten, and molybdenum. In some embodiments, the under-layer is different from or does not contain the metal of the metal conductive layer. In some embodiments, the under-layer is tungsten-free. In some embodiments, the under-layer is molybdenum-free. The under-layer 213 forms an overhang 215 such that the under-layer 213 is thicker near the opening of the feature 201 than inside the feature 201.

In some implementations, features having one or more constrictions within the feature may be filled. FIG. 2D shows examples of views of various filled features having constrictions. Each of the examples (a), (b) and (c) in FIG. 2D includes a constriction 209 at a midpoint within the feature. The constriction 209 can be, for example, between about 15 nm-20 nm wide. Constrictions can cause pinch off during deposition of tungsten or molybdenum in the feature using conventional techniques, with deposited metal blocking further deposition past the constriction before that portion of the feature is filled, resulting in voids in the feature. Example (b) further includes a liner/barrier overhang 215 at the feature opening. Such an overhang could also be a potential pinch-off point. Example (c) includes a constriction 212 further away from the field region than the overhang 215 in example (b). Horizontal features, such as in 3-D memory structures, can also be filled. FIG. 2E shows an example of a horizontal feature 250 that includes a constriction 251. For example, horizontal feature 250 may be a word line in a 3D NAND (also referred to as vertical NAND or VNAND) structure. In some implementations, the constrictions can be due to the presence of pillars in a 3D NAND or other structure. FIG. 2F presents a cross-sectional side-view of a 3-D NAND structure 210) (formed on a silicon substrate 202) having VNAND stacks (left 225 and right 226), central vertical structure 230, and a plurality of stacked horizontal features 220) with openings 222 on opposite sidewalls 240 of central vertical structure 230. Note that FIG. 2F displays two “stacks” of the exhibited 3-D NAND structure 210, which together form the “trench-like” central vertical structure 230, however, in certain embodiments, there may be more than two “stacks” arranged in sequence and running spatially parallel to one another, the gap between each adjacent pair of “stacks” forming a central vertical structure 230, like that explicitly illustrated in FIG. 2F. In this embodiment, the horizontal features 120 are 3-D memory word line features that are fluidically accessible from the central vertical structure 230 through the openings 222. Although not explicitly indicated in the figure, the horizontal features 220 present in both the 3-D NAND stacks 225 and 226 shown in FIG. 2F (i.e., the left 3-D NAND stack 225 and the right 3-D NAND stack 226) are also accessible from the other sides of the stacks (far left and far right, respectively) through similar vertical structures formed by additional 3-D NAND stacks (to the far left and far right, but not shown). In other words, each 3-D NAND stack 225, 226 contains a stack of word line features that are fluidically accessible from both sides of the 3-D NAND stack through a central vertical structure 1230. In the particular example schematically illustrated in FIG. 2F, each 3-D NAND stack contains 6 pairs of stacked word lines, however, in other embodiments, a 3-D NAND memory layout may contain any number of vertically stacked pairs of word lines.

The word line features in a 3-D NAND stack are typically formed by depositing an alternating stack of silicon oxide and silicon nitride layers, and then selectively removing the nitride layers leaving a stack of oxides layers having gaps between them. These gaps are the word line features. Any number of word lines may be vertically stacked in such a 3-D NAND structure so long as there is a technique for forming them available, as well as a technique available to successfully accomplish (substantially) void-free fills of the vertical features. Thus, for example, a VNAND stack may include between 2 and 256 horizontal word line features, or between 8 and 128 horizontal word line features, or between 16 and 64 horizontal word line features, and so forth (the listed ranges understood to include the recited end points).

FIG. 2G presents a cross-sectional top-down view of the same 3-D NAND structure 210 shown in side-view in FIG. 2F with the cross-section taken through the horizontal section 260 as indicated by the dashed horizontal line in FIG. 2F. The cross-section of FIG. 2G illustrates several rows of pillars 255, which are shown in FIG. 1F to run vertically from the base of semiconductor substrate 202 to the top of 3-D NAND stack 210. In some embodiments, these pillars 255 are formed from a polysilicon material and are structurally and functionally significant to the 3-D NAND structure 210. In some embodiments, such polysilicon pillars may serve as gate electrodes for stacked memory cells formed within the pillars. The top-view of FIG. 2G illustrates that the pillars 255 form constrictions in the openings 222 to word line features 220—i.e. fluidic accessibility of word line features 220 from the central vertical structure 230 via openings 222 (as indicated by the arrows in FIG. 2G) is inhibited by pillars 255. In some embodiments, the size of the horizontal gap between adjacent polysilicon pillars is between about 1 and 20 nm. This reduction in fluidic accessibility increases the difficulty of uniformly filling word line features 120 with conductive metal film. The structure of word line features 220 and the challenge of uniformly filling them with conductive metal material due to the presence of pillars 255 is further illustrated in FIGS. 2H, 2I, and 2J.

FIG. 2H exhibits a vertical cut through a 3-D NAND structure similar to that shown in FIG. 2F, but here focused on a single pair of word line features 220 and additionally schematically illustrating a fill process which resulted in the formation of a void 275 in the filled word line features 220. FIG. 2I also schematically illustrates void 175, but in this figure illustrated via a horizontal cut through pillars 155, like the horizontal cut exhibited in FIG. 2G. FIG. 2J illustrates the accumulation of metal (e.g., W or Mo) around the constriction-forming pillars 255, the accumulation resulting in the pinch-off of openings 222, so that no additional W. Mo. or other metal can be deposited in the region of voids 275. Apparent from FIGS. 2H and 2I is that void-free fill relies on migration of sufficient quantities of deposition precursor down through vertical structure 230, through openings 222, past the constricting pillars 255, and into the furthest reaches of word line features 220, prior to the accumulated deposition of metal around pillars 255 causing a pinch-off of the openings 222 and preventing further precursor migration into word line features 220. Similarly. FIG. 2J exhibits a single word line feature 220 viewed cross-sectionally from above and illustrates how a generally conformal deposition of metal begins to pinch-off the interior of word line feature 220 due to the fact that the significant width of pillars 255 acts to partially block, and/or narrow, and/or constrict what would otherwise be an open path through word line feature 220. (It should be noted that the example in FIG. 2J can be understood as a 2-D rendering of the 3-D features of the structure of the pillar constrictions shown in FIG. 2I, thus illustrating constrictions that would be seen in a plan view rather than in a cross-sectional view.)

Three-dimensional structures may need longer and/or more concentrated exposure to precursors to allow the innermost and bottommost areas to be filled. Three-dimensional structures can be particularly challenging when employing molybdenum halide and/or molybdenum oxyhalide precursors because of their proclivity to etch, with longer and more concentrated exposure allowing for more etch as parts of the structure.

In some embodiments, the methods involve deposition of a first metal layer in a feature. The first metal layer may be a nucleation layer, a bulk layer, or a bulk layer deposited on a nucleation layer. It may be deposited by an ALD process to conformally line the feature. The first metal layer may be exposed to an inhibition treatment. In some embodiments, the inhibition treatment is preferentially applied near the top of the feature, such that subsequent deposition in the bottom of the feature is not inhibited or inhibited to a lesser extent than near the top. This results in bottom-up fill.

The methods may also be used to fill multiple adjacent features, such as DRAM bWL trenches. Fill processes for DRAM bWL trenches can distort the trenches such that the final trench width and resistance Rs are significantly non-uniform. This phenomenon is referred to as line bending. FIG. 2K shows an unfilled (231) and filled (235) narrow asymmetric trench structure DRAM bWL that exhibit line bending after fill. As shown, multiple features are depicted on a substrate. These features are spaced apart, and in some embodiments, adjacent features have a pitch between about 20 nm and about 60 nm or between about 20 nm and 40 nm. The pitch is defined as the distance between the middle axis of one feature to the middle axis of an adjacent feature. The unfilled features may be generally V-shaped as shown in feature in FIG. 2K, having sloped sidewalls where the width of the feature narrows from the top of the feature to the bottom of the feature. The features widen from the feature bottom to the feature top. Sequences of depositions that use inhibition may be used to mitigate line bending. These include inhibiting the full depth of the features.

Examples of feature fill for horizontally oriented and vertically oriented features are described below. It should be noted that in at least most cases, the examples are applicable to both horizontally oriented and vertically oriented features. Moreover, it should also be noted that in the description below, the term “lateral” may be used to refer to a direction generally orthogonal to the feature axis and the term “vertical” to refer to a direction generally along the feature axis.

The methods of filling features described herein include inhibition of metal nucleation. According to various embodiments, the methods include performing a de-inhibition operation to lessen or remove inhibition effects. In some embodiments, a de-inhibition operation is performed to tune an inhibition profile in a feature. In some embodiments, a de-inhibition operation is performed to lessen or remove inhibition on field regions of a substrate. The de-inhibition treatment may involve exposure to hydrogen (H₂) gas, or a plasma generated from H₂ gas without concurrent exposure to reactants such as a metal precursor or nitrogen-containing inhibition gas or plasma. In some embodiments, exposure to an inert gas such as argon (Ar) is performed before or after a de-inhibition treatment.

In some embodiments, one or more of the following advantages may be realized. A de-inhibition treatment may be used to decouple inhibition from deposition using hydrogen and a metal precursor. An inhibition profile may be tuned using the de-inhibition treatment, for example, filling a feature bottom or interior with metal after inhibition, followed by a de-inhibition treatment to tune the inhibition profile near the feature opening. A de-inhibition treatment may be used to lessen or remove inhibition from a field region. This can facilitate uniform deposition across the substrate in a subsequent deposition operation. Argon may be used to facilitate timing without increasing or decreasing an inhibition effect, allowing precise tuning of de-inhibition.

Embodiments of the methods described herein employ hydrogen (H₂) gas or plasma exposure to modulate or remove a nucleation inhibition effect. In some embodiments, they may be implemented as part of a deposition-inhibition-deposition (DID) sequence for feature fill. FIG. 3A is a process flow diagram illustrating operations in filling a structure with a metal according to various embodiments and FIG. 3B shows a schematic of a cross-section of feature at various stages in according to an embodiment of the process in FIG. 3A.

In FIG. 3B, at 300, an unfilled feature 302 is shown at a pre-fill stage. The feature 302 may be formed in one or more layers on a semiconductor substrate and may optionally have one or more layers that line the sidewalls and/or bottom of the feature. Turning to FIG. 3A, a metal film is deposited in the feature in an operation 301. This operation may be referred to as Dep1. In many embodiments, operation 301 is a generally conformal deposition that lines the exposed surfaces of the structures. For example, in a 3D NAND structure such as that shown in FIG. 2F, the metal film lines the word line features 220. According to various embodiments, the metal film is deposited using an atomic layer deposition (ALD) process to achieve good conformality. Chemical vapor deposition (CVD) processes may be used in alternate embodiments. Still further, the process may also be carried out with any appropriate metal deposition including physical vapor deposition (PVD) or plating processes. In some embodiments, after operation 301, the features are not closed off, but sufficiently open to allow further reactant gases to enter the features in a subsequent deposition.

In an ALD process, the feature is exposed to alternating pulses of reactant gases. In the example of tungsten deposition, a tungsten-containing precursor such as tungsten hexafluoride (WF₆), tungsten hexachloride (WCl₆), tungsten pentachloride (WCl₅), tungsten hexacarbonyl (W(CO)₆), or a tungsten-containing organometallic compound may be used. In some embodiments, pulses of the tungsten-containing precursor are pulsed with a reducing agent such as hydrogen (H₂), diborane (B₂H₆), silane (SiH₄), or germane (GeH₄). In a CVD method, the wafer is exposed to the reactant gases simultaneously. Deposition chemistries for other films are provided below. In FIG. 3B, at 310, the feature 302 is shown after Dep1 to form a layer of the material 304 to be filled in the feature 302.

Next, in an operation 303 in FIG. 3A, the deposited metal film is exposed to an inhibition treatment. This may be a conformal or non-conformal treatment. A non-conformal treatment in this context refers to the treatment being preferentially applied at and near the opening or openings of the feature than in the feature interior. For 3D NAND structures, the treatment may be conformal in the vertical direction such that the bottom word line feature is treated to approximately the same extent as the top word line feature, while non-conformal in that the interior of the word line features are not exposed to the treatment or to a significantly lesser extent than the feature openings. A conformal treatment refers to the entire feature being treated to roughly the same extent. Such a treatment may be performed to mitigate line bending, for example, of the features in FIG. 2K.

The inhibition treatment treats the feature surface to inhibit subsequent metal nucleation at the treated surfaces. It can involve one or more of: deposition of an inhibition film, reaction of inhibition species with the Dep1 film to form a compound film (e.g., WN or Mo₂N), and adsorption of inhibition species. During the subsequent deposition operation, there is a nucleation delay on the inhibited portions of the underlying film relative to the non- or lesser-inhibited portions (if any). The inhibition treatment may be a plasma or non-plasma operation.

If a plasma treatment is used, the plasma may be a remote or in-situ plasma. In some embodiments, it is generated from nitrogen (N₂) gas, though other nitrogen-containing gases may be used. In some embodiments, the plasma is a radical-based plasma, with no appreciable number of ions. Such plasmas are typically remotely generated. Nitrogen radicals may react with an underlying film to form a metal nitride in some embodiments.

If a non-plasma operation, it may be purely thermal or activated by some other energy such as UV radiation. For thermal inhibition treatments, a nitrogen- and hydrogen-containing compound such as ammonia (NH₃) may be used. In some embodiments, a thermal inhibition operation includes exposure to a metal precursor, which can be co-flowed with the inhibition gas or delivered in alternating pulses with it.

In FIG. 3B, at 320 the feature 302 is shown after an inhibition treatment. The inhibition treatment is a treatment that has the effect of inhibiting subsequent deposition on the treated surfaces 306. The inhibition may be characterized by an inhibition depth and an inhibition gradient. For non-conformal inhibitions, the inhibition varies with feature depth. In some embodiments, the inhibition is greater at the feature opening than at the bottom of the feature and may extend only partway into the feature. In the depicted example of FIG. 3B, the inhibition depth is about half of the full feature depth. In addition, the inhibition treatment is stronger at the top of the feature, as graphically shown by the dotted line deeper within the feature. As indicated above, in other embodiments, the inhibition may be uniform throughout the feature. For word line features, a non-conformal treatment may inhibit more near the feature openings than further within the feature interior.

Returning to FIG. 3A, after operation 303, a second layer of metal is deposited in the feature in an operation 305. The second deposition may be referred to as Dep2 and may be performed by an ALD or CVD process. For deposition into 3D NAND structures, an ALD process may be used to allow for good step coverage throughout the structure. The Dep2 operation is influenced by the preceding inhibition operation. For example, if the feature openings are preferentially inhibited over the feature interior, deposition will preferentially occur in the feature interior. In another example, nitrogen on the surface of the deposited metal along the sidewalls of the feature may prevent metal-metal (e.g., tungsten-tungsten bonding) thereby reducing line bending.

In the example of FIG. 3B, because deposition is inhibited near the feature opening, during the Dep2 stage shown at 330, the material preferentially deposits at the feature bottom while not depositing or depositing to a less extent at the feature opening. This can prevent the formation of voids and seams within the filled feature. As such, during Dep2, the material 304 may be filled in a manner characterized as bottom-up fill rather than the conformal Dep1 fill. As the deposition continues, the inhibition effect may be removed, such that deposition on the lightly treated surfaces may no longer be inhibited. This is illustrated at 330, with the treated surfaces 306 being less extensive than prior to the Dep2 stage. In the example of FIG. 3B, as the Dep2 proceeds, the inhibition is eventually overcome on all surfaces and the feature is completely filled with the material 304 as shown at 340. While the DID process in FIG. 3B shows the feature preferentially inhibited at the top of the feature, in some embodiments, the entire feature may be inhibited. Such a process can be useful for preventing line bending, for example.

Embodiments of the methods described herein use hydrogen (H₂) to modulate an inhibition treatment. This process can be referred to as “de-inhibition” and can be used to tune the conformality of the inhibition. Such a process may be used in the DID process described in FIG. 3B, for example, to change the inhibition depth prior to the Dep2 operation. In another example, a de-inhibition process may be used to lessen the inhibition effect closer to the feature opening. This is illustrated in a schematic in FIG. 4. A feature is shown after an inhibition treatment and subsequent deposition to partially fill the feature. It has a region 410 near the feature center that is less inhibited than an upper region 420, as represented by the dashed line in region 410 and solid line in region 420. The extent of inhibition may be appropriate for region 410 but too high for region 420. A de-inhibition treatment is performed to reduce the inhibition in region 420 but not in (or to a lesser extent in) region 410. In this manner, de-inhibition can be used to tune inhibition conformality.

According to various embodiments, de-inhibition may be performed directly after an inhibition operation or after subsequent deposition (e.g., deposition/inhibition/deposition/de-inhibition/deposition).

In some embodiments, de-inhibition may be performed after a feature is filled or partially filled to remove inhibition species from a field region of the surface. This can facilitate uniform deposition and subsequent processing across the substrate surface.

FIG. 5 provides an example of removing inhibition species from a field region after deposition in the feature. At 510, a re-entrant feature is shown having a conformal layer of material 504. At 520, inhibition species 506 are shown on the field regions 521 and the upper sidewalls of the feature. Subsequent deposition is shown at 530 with the feature partially filled with material 504. During the deposition, some of the inhibition species are consumed with inhibition species 506 remaining on the field regions. After a de-inhibition operation, the inhibition species are removed from the field regions at shown at 535. After another deposition operation, the feature is filled with material 504 with an overburden on the field regions as shown at 540b. At 540a, feature fill is shown without the de-inhibition operation. The inhibition species remaining on the field regions at 530 can result in a void 514. Even if the fill is void-free, a de-inhibition may be used to remove inhibition in the field regions and provide a uniform surface across the substrate for subsequent overburden deposition.

Soaking an inhibited surface in hydrogen (H₂) reduces an inhibition effect. While the methods described herein are not dependent on a particular mechanism, it is believed that the ammonia molecules or other inhibition species may be desorbed by the hydrogen. In some embodiments, the inhibition effect is completely removed by the de-inhibition process.

In some embodiments, an argon (Ar) or other inert gas may be used to control de-inhibition. Exposing a substrate to Ar has been found to have little effect, allowing an Ar soak to be used before and/or after a H₂ soak to precisely control the de-inhibition caused by the H₂ soak. This can allow synchronization across multiple stations or chambers. In some embodiments, for example, an Ar soak may be used after an H₂ soak while the substrate waits to be moved to a deposition station.

Flowing WF₆ or other metal precursor with H₂ also results in a de-inhibition effect. Eventually as the inhibition is removed, metal will deposit if the metal precursor/H₂ flow is allowed to proceed. Initially, there is no deposition on the inhibited surfaces. In some embodiments, however, H₂ de-inhibition (i.e., H₂ soak without metal precursor) de-inhibits more uniformly than metal precursor+H₂ de-inhibition.

FIG. 6 is a process flow diagram illustrating operations in a method of filling a feature. A feature having inhibited surfaces is provided in an operation 601. Examples of features are provided above. As discussed above, the inhibition may extend to the bottom of a feature or be present only in part of a feature, e.g., near the top of the feature. The feature may be provided to a station of substrate processing chamber.

Next, the feature is exposed to metal precursor and H₂ in an operation 603. During operation 603, both metal precursor and H₂ are present in the station in vapor form at the same time. CVD deposition may occur at non-inhibited portions of the feature (e.g., at the bottom). Some of the inhibition effect is reduced or overcome. Operation 603 is ended prior to complete de-inhibition in an operation 605. Operation 603 may be referred to as a CVD operation by virtue of exposing the substrate to CVD deposition gases though it is possible that no deposition occurs during part or all of the operation.

Next, a hydrogen soak (without metal precursor) is performed in an operation 607. At least some de-inhibition occurs during operation 607. Operation 607 may complete de-inhibition, e.g., by removing any remaining inhibition species. As discussed below, operations 605 and 607 together can provide highly uniform deposition in a subsequent operation. The feature is then exposed to a metal precursor and hydrogen flow in an operation 609. Metal is deposited including on de-inhibited surfaces.

In some embodiments, transitioning from operation 603 to operations 605 and 607 may involve turning off a flow of metal precursor while allowing H₂ to continue flowing. The H₂ flow may be increased or decreased. An inert gas flow (e.g., Ar may be used). As described above, an inert gas flow may precede and/or succeed the H₂ flow. In some embodiments, transitioning to operation 605 may involve turning off a flow of metal precursor and a flow of H₂. In some embodiments, transitioning to operation 607 may involve transferring the substrate to a different station in a multi-station chamber or to a different chamber.

In some embodiments, transitioning from operation 607 to operation 609 may involve turning on a flow of metal precursor while allowing H₂ to continue flowing. The H₂ flow may be increased or decreased. In some embodiments, transitioning to operation 609 may involve turning on a flow of metal precursor and a flow of H₂. In some embodiments, transitioning to operation 607 may involve transferring the substrate to a different station in a multi-station chamber or to a different chamber.

Examples of temperatures during operation 607 are 300° C. to 500° C. Temperatures during operations 603 and 609 may depend on fill requirements. For example, a relatively low temperature may be used during fill of the bottom of the feature to obtain a low stress film. The temperature may be raised during fill of the top of the feature for a higher deposition rate.

According to various embodiments, the soak or dose times of a WF₆+H₂ or H₂ de-inhibition may be tuned. In some embodiments, for example, operations 603 and 605 may independently be from 5 to 100 seconds.

Examples of process sequences are provided below:

• • (A) Inhibition/short WF₆+H₂/short H₂/WF₆+H₂
  • (B) Inhibition/short WF₆+H₂/long H₂/WF₆+H₂
  • (C) Inhibition/long WF₆+H₂/short H₂/WF₆+H₂ In the sequences above, a H₂ only soak is between two WF₆+H₂ stages. H₂ only may include Ar or other inert carrier gas. Also, as described above, an Ar only soak may be performed without affecting the H₂ de-inhibition. Depending on the length of a WF₆+H₂ stage, de-inhibition and/or deposition may be occurring during the stage. In example (A), the short WF₆+H₂ and H₂ may together de-inhibit some of the feature, with additional de-inhibition occurring in the second WF₆+H₂ stage. In example (B), the short WF₆+H₂ and long H₂ soak may together de-inhibit all of the feature with the subsequent WF₆+H₂ stage depositing immediately. In example (C), the long WF₆+H₂ may de-inhibit and deposit in the feature, with the subsequent short H₂ soak removing inhibition species from the field region, followed by a WF₆+H₂ CVD deposition. In the sequences above, the initial WF₆+H₂ may deposit on immediately on surfaces that are not inhibited (e.g., at the bottom of a feature) while having only a de-inhibition effect on inhibited surface initially.

In some embodiments, metal precursor+H₂ stages may be each performed in a different station of a multi-station chamber. An intervening H₂/Ar soak can be performed in one or both stations, with Ar-only used to appropriately synchronize the operations or otherwise balance the station loads. Alternatively, an intervening H₂/Ar soak can be performed in a third station, with Ar-only used to appropriately synchronize the operations or otherwise balance the station loads.

Splitting a metal precursor+H₂ operations into two stages post-inhibition with an intervening hydrogen soak improves process uniformity. In the below table, tungsten was deposited from WF₆ and H₂ after an inhibition operation on a blanket wafer. Dep2 delay time was about 33 seconds. Process 1 used no H₂ soak. In process 7, the first WF₆+H₂ stage was longer than the Dep2 delay such that the substrate was completely de-inhibited prior to the H₂ soak.

Process	1	2	3	4	5	6	7
Stage 1:	55	10	15	20	25	30	35
WF6 +
H2 time
H2 time	0	120	120	120	120	120	120
Stage 2:	0	19	19	19	19	19	19
WF6 +
H2 time
NU %	9.4	3.6	3.2	2.6	3.6	5.6	9.7

Non-uniformity for processes 2-6 is improved from no H₂ soak, going from over 9% to less than 4% for processes 2-5. However, the benefit is lost if the first stage WF₆+H₂ operation is long enough for complete inhibition.

In some embodiments, the H₂ soak may remove inhibition species in a feature but leave inhibition species on a field region. A second H₂ soak may be used to de-inhibit the field region after feature fill. In some embodiments, a H₂ soak may be implemented only after feature fill.

While a thermal, non-plasma H₂ soak is described above as a de-inhibition treatment, the methods may be implemented using exposure to a plasma generated from H₂. A remote or in-situ plasma may be used. An inert gas such as argon (Ar) may or may not be present.

Metal-Containing Precursors

While WF₆ is used as an example of a tungsten-containing precursor in the above description, other tungsten-containing precursors may be suitable for performing disclosed embodiments. For example, a metal-organic tungsten-containing precursor may be used. Organo-metallic precursors and precursors that are free of fluorine, such as MDNOW (methylcyclopentadienyl-dicarbonylnitrosyl-tungsten) and EDNOW (ethylcyclopentadienyl-dicarbonylnitrosyl-tungsten) may also be used. Chlorine-containing tungsten precursors (WCl_x) such as tungsten pentachloride (WCl₅) and tungsten hexachloride (WCl₆) may be used.

To deposit molybdenum (Mo), Mo-containing precursors including molybdenum hexafluoride (MoF₆), molybdenum pentachloride (MoCl₅), molybdenum dichloride dioxide (MoO₂Cl₂), molybdenum tetrachloride oxide (MoOCl₄), and molybdenum hexacarbonyl (Mo(CO)₆) may be used.

To deposit ruthenium (Ru), Ru-precursors may be used. Examples of ruthenium precursors that may be used for oxidative reactions include (ethylbenzyl)(1-ethyl-1,4-cyclohexadienyl)Ru(0), (1-isopropyl-4-methylbenzyl)(1,3-cyclohexadienyl)Ru(0), 2,3-dimethyl-1,3-butadienyl)Ru(0) tricarbonyl, (1,3-cyclohexadienyl)Ru(0) tricarbonyl, and (cyclopentadienyl)(ethyl)Ru(II) dicarbonyl. Examples of ruthenium precursors that react with non-oxidizing reactants are bis (5-methyl-2,4-hexanediketonato)Ru(II) dicarbonyl and bis (ethylcyclopentadienyl)Ru(II).

To deposit cobalt (Co), cobalt-containing precursors including dicarbonyl cyclopentadienyl cobalt (I), cobalt carbonyl, various cobalt amidinate precursors, cobalt diazadienyl complexes, cobalt amidinate/guanidinate precursors, and combinations thereof may be used.

The metal-containing precursor may be reacted with a reducing agent as described above. In some embodiments, H₂ is used as a reducing agent for bulk layer deposition to deposit high purity films.

Nucleation Layer Deposition

In some implementations, the methods described herein involve deposition of a nucleation layer prior to deposition of a bulk layer. For example, deposition of a conformal layer in a Dep1 operation may involve deposition of a nucleation layer followed by ALD of a thin bulk layer.

A nucleation layer is typically a thin conformal layer that facilitates subsequent deposition of bulk material thereon. For example, a nucleation layer may be deposited prior to any fill of the feature and/or at subsequent points during fill of the feature (e.g., via interconnect) on a wafer surface. For example, in some implementations, a nucleation layer may be deposited following etch of tungsten in a feature, as well as prior to initial tungsten deposition.

In certain implementations, the nucleation layer is deposited using a pulsed nucleation layer (PNL) technique. In a PNL technique to deposit a tungsten nucleation layer, pulses of a reducing agent, optional purge gases, and tungsten-containing precursor are sequentially injected into and purged from the reaction chamber. The process is repeated in a cyclical fashion until the desired thickness is achieved. PNL broadly embodies any cyclical process of sequentially adding reactants for reaction on a semiconductor substrate, including atomic layer deposition (ALD) techniques. Nucleation layer thickness can depend on the nucleation layer deposition method as well as the desired quality of bulk deposition. In general, nucleation layer thickness is sufficient to support high quality, uniform bulk deposition. Examples may range from 10 Å-100 Å.

The methods described herein are not limited to a particular method of nucleation layer deposition but include deposition of bulk film on nucleation layers formed by any method including PNL, ALD. CVD, and physical vapor deposition (PVD). Moreover, in certain implementations, bulk tungsten may be deposited directly in a feature without use of a nucleation layer. For example, in some implementations, the feature surface and/or an already-deposited under-layer supports bulk deposition. In some implementations, a bulk deposition process that does not use a nucleation layer may be performed.

In various implementations, nucleation layer deposition can involve exposure to a metal precursor as described above and a reducing agent. Examples of reducing agents can include boron-containing reducing agents including diborane (B₂H₆) and other boranes, silicon-containing reducing agents including silane (SiH₄) and other silanes, hydrazines, and germanes. In some implementations, pulses of metal-containing can be alternated with pulses of one or more reducing agents, e.g., S/W/S/W/B/W, etc., W representing a tungsten-containing precursor, S represents a silicon-containing precursor, and B represents a boron-containing precursor. In some implementations, a separate reducing agent may not be used, e.g., a tungsten-containing precursor may undergo thermal or plasma-assisted decomposition.

Bulk Deposition

As described above, bulk deposition may be performed across a wafer. In some implementations, bulk deposition can occur by a CVD process in which a reducing agent and a metal-containing precursor are flowed into a deposition chamber to deposit a bulk fill layer in the feature. An inert carrier gas may be used to deliver one or more of the reactant streams, which may or may not be pre-mixed. Unlike PNL or ALD processes, this operation generally involves flowing the reactants continuously until the desired amount is deposited. In certain implementations, the CVD operation may take place in multiple stages, with multiple periods of continuous and simultaneous flow of reactants separated by periods of one or more reactant flows diverted. Bulk deposition may also be performed using ALD processes in which a metal-containing precursor is alternated with a reducing agent such as H₂. In some implementations. ALD may be used to deposit an initial bulk layer in a Dep1 process with CVD used for the remaining feature fill after inhibition. In some implementations, ALD may be used for feature fill with CVD used for an overburden layer. In some implementations, ALD may be used for all of the bulk layer deposition.

It should be understood that the metal films described herein may include some amount of other compounds, dopants and/or impurities such as nitrogen, carbon, oxygen, boron, phosphorous, sulfur, silicon, germanium and the like, depending on the particular precursors and processes used. The metal content in the film may range from 20% to 100% (atomic) metal. In many implementations, the films are metal-rich, having at least 50% (atomic) metal, or even at least about 60%, 75%, 90%, or 99% (atomic) metal. In some implementations, the films may be a mixture of metallic or elemental metal (e.g., W, Mo, Co, or Ru) and other metal-containing compounds such as tungsten carbide (WC), tungsten nitride (WN), molybdenum nitride (MoN) etc. CVD and ALD deposition of these materials can include using any appropriate precursors as described above.

Inhibition of Metal Nucleation

Plasma inhibition processes involve exposure to a plasma generated from a nitrogen containing compound, such as N₂. Plasma power, chamber pressure, and/or process gases may be pulsed in some embodiments.

Thermal inhibition processes generally involve exposing the feature to a nitrogen-containing compound such as ammonia (NH₃) or hydrazine (N₂H₄) to non-conformally inhibit the feature near the feature opening. In some embodiments, the thermal inhibition processes are performed at temperatures ranging from 250° C. to 450° C. At these temperatures, exposure of a previously formed tungsten or other layer to NH₃ results in an inhibition effect. Other potentially inhibiting chemistries such as nitrogen (N₂) or hydrogen (H₂) may be used for thermal inhibition at higher temperatures (e.g., 900° C.). For many applications, however, these high temperatures exceed the thermal budget. In addition to ammonia, other hydrogen-containing nitriding agents such as hydrazine may be used at lower temperatures appropriate for back end of line (BEOL) applications. During thermal inhibition, a metal precursor may be flowed with the inhibition gas or in alternating pulses with the gas.

Nitridation of a surface can passivate it. Subsequent deposition of tungsten or other metal such as molybdenum or cobalt on a nitrided surface is significantly delayed, compared to on a regular bulk tungsten film. In addition to NF₃, fluorocarbons such as CF₄ or C₂F₈ may be used. However, in certain implementations, the inhibition species are fluorine-free to prevent etching during inhibition.

In addition to the surfaces described above, nucleation may be inhibited on liner/barrier layers surfaces such as TiN and/or WN surfaces. Any chemistry that passivates these surfaces may be used. Inhibition chemistry can also be used to tune an inhibition profile, with different ratios of active inhibiting species used. For example, for inhibition of W surfaces, nitrogen may have a stronger inhibiting effect than hydrogen; adjusting the ratio of N₂ and H₂ gas in a forming gas can be used to tune a profile.

In certain implementations, the substrate can be heated up or cooled down before inhibition. A predetermined temperature for the substrate can be selected to induce a chemical reaction between the feature surface and inhibition species and/or promote adsorption of the inhibition species, as well as to control the rate of the reaction or adsorption. For example, a temperature may be selected to have high reaction rate such that more inhibition occurs near the gas source.

After inhibition, the inhibition effect may be modulated as described above. In the same or other embodiments, it may also be modulated by soaking it in a reducing agent or metal precursor, exposing it to a hydrogen-(H−)containing plasma, performing a thermal anneal, exposing it an air, which can reduce the inhibition effect.

Apparatus

Any suitable chamber may be used to implement the disclosed embodiments. Example deposition apparatuses include various systems, e.g., ALTUSR and ALTUSR Max, available from Lam Research Corp., of Fremont, California, or any of a variety of other commercially available processing systems.

In some embodiments, a first deposition may be performed at a first station that is one of two, five, or even more deposition stations positioned within a single deposition chamber. Thus, for example, hydrogen (H₂) and tungsten hexachloride (WF₆) may be introduced in alternating pulses to the surface of the semiconductor substrate, at the first station, using an individual gas supply system that creates a localized atmosphere at the substrate surface. Another station may be used for inhibition treatment, and a third and/or fourth for subsequent ALD bulk fill. In some embodiments, the inhibition may be performed in a separate module.

FIG. 7 is a schematic of a process system suitable for conducting deposition processes in accordance with embodiments. The system 700 includes a transfer module 703. The transfer module 703 provides a clean, pressurized environment to minimize risk of contamination of substrates being processed as they are moved between various reactor modules. Mounted on the transfer module 703 is a multi-station reactor 709 capable of performing ALD, CVD, and treatments such as inhibition treatment and de-inhibition treatment according to various embodiments. Multi-station reactor 709 may include multiple stations 711, 713, 715, and 717 that may sequentially perform operations in accordance with disclosed embodiments. For example, multi-station reactor 709 may be configured such that station 711 performs a W, Mo, Co, or Ru nucleation layer deposition using a metal precursor and a boron- or silicon-containing reducing agent followed by an ALD W, Mo, Co, or Ru bulk deposition of a conformal layer using H₂ as reducing agent, station 713 performs an inhibition treatment operation, and stations 715 and 717 perform CVD bulk deposition to fill the feature. As discussed above, an H₂ soak may be performed at either one of or both of stations 715 and 717, with Ar soak used as convenient for scheduling before and/or after an H₂ soak. Stations may include a heated pedestal or substrate support, one or more gas inlets or showerhead or dispersion plate.

In some embodiments, the multi-station module may be used for deposition (and other processes such as etch) with inhibition performed in a separate module such as module 707.

One example of a station is depicted in FIG. 8, which shows a station configured for semiconductor processing. The station is connected to a remote plasma generator 850 and has a showerhead 821 and substrate support 804. On top of the substrate support is a carrier ring 831.

Returning to FIG. 7, also mounted on the transfer module 703 may be one or more single or multi-station modules 707 capable of performing plasma or chemical (non-plasma) pre-cleans, plasma or non-plasma inhibition operations, other deposition operations, or etch operations. The module may also be used for various treatments to, for example, prepare a substrate for a deposition process. The system 700 also includes one or more wafer source modules 701, where wafers are stored before and after processing. An atmospheric robot (not shown) in the atmospheric transfer chamber 719 may first remove wafers from the source modules 701 to load locks 721. A wafer transfer device (generally a robot arm unit) in the transfer module 703 moves the wafers from load locks 721 to and among the modules mounted on the transfer module 703.

In various embodiments, a system controller 729 is employed to control process conditions during deposition. The controller 729 will typically include one or more memory devices and one or more processors. A processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.

The controller 729 may control all the activities of the deposition apparatus. The system controller 729 executes system control software, including sets of instructions for controlling the timing, mixture of gases, chamber pressure, chamber temperature, wafer temperature, radio frequency (RF) power levels, wafer chuck or pedestal position, and other parameters of a particular process. Other computer programs stored on memory devices associated with the controller 729 may be employed in some embodiments.

Typically, there will be a user interface associated with the controller 729. The user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.

System control logic may be configured in any suitable way. In general, the logic can be designed or configured in hardware and/or software. The instructions for controlling the drive circuitry may be hard coded or provided as software. The instructions may be provided by “programming.” Such programming is understood to include logic of any form, including hard coded logic in digital signal processors, application-specific integrated circuits, and other devices which have specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general-purpose processor. System control software may be coded in any suitable computer readable programming language.

The computer program code for controlling the germanium-containing reducing agent pulses, hydrogen flow, and tungsten-containing precursor pulses, and other processes in a process sequence can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program. Also as indicated, the program code may be hard coded.

The controller parameters relate to process conditions, such as, for example, process gas composition and flow rates, temperature, pressure, cooling gas pressure, substrate temperature, and chamber wall temperature. These parameters are provided to the user in the form of a recipe and may be entered utilizing the user interface.

Signals for monitoring the process may be provided by analog and/or digital input connections of the system controller 729. The signals for controlling the process are output on the analog and digital output connections of the system 700.

The system software may be designed or configured in many ways. For example, various chamber component subroutines or control objects may be written to control operation of the chamber components necessary to carry out the deposition processes in accordance with the disclosed embodiments. Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.

In some implementations, a controller 729 is part of a system, which may be part of the above-described examples. Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate. The electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems. The controller 729, depending on the processing requirements and/or the type of system, may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings in some systems, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.

Broadly speaking, the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system. The operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.

The controller 729, in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller 729 may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing. The computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process. In some examples, a remote computer (e.g. a server) can provide process recipes to a system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. The parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a CVD chamber or module, an ALD chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.

As noted above, depending on the process step or steps to be performed by the tool, the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.

The controller 629 may include various programs. A substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber such as a gas inlet and/or target. A process gas control program may include code for controlling gas composition, flow rates, pulse times, and optionally for flowing gas into the chamber prior to deposition to stabilize the pressure in the chamber. A pressure control program may include code for controlling the pressure in the chamber by regulating, e.g., a throttle valve in the exhaust system of the chamber. A heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas such as helium to the wafer chuck.

Examples of chamber sensors that may be monitored during deposition include mass flow controllers, pressure sensors such as manometers, and thermocouples located in the pedestal or chuck. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions.

The foregoing describes implementation of disclosed embodiments in a single or multi-chamber semiconductor processing tool. The apparatus and process described herein may be used in conjunction with lithographic patterning tools or processes, for example, for the fabrication or manufacture of semiconductor devices, displays, LEDs, photovoltaic panels, and the like. Typically, though not necessarily, such tools/processes will be used or conducted together in a common fabrication facility. Lithographic patterning of a film typically includes some or all of the following steps, each step provided with a number of possible tools: (1) application of photoresist on a workpiece, i.e., substrate, using a spin-on or spray-on tool: (2) curing of photoresist using a hot plate or furnace or UV curing tool: (3) exposing the photoresist to visible or UV or x-ray light with a tool such as a wafer stepper: (4) developing the resist so as to selectively remove resist and thereby pattern it using a tool such as a wet bench: (5) transferring the resist pattern into an underlying film or workpiece by using a dry or plasma-assisted etching tool; and (6) removing the resist using a tool such as an RF or microwave plasma resist stripper.

Unless otherwise stated, ranges in this disclosure are inclusive of the endpoints. For example, between 25:75-75:25 includes 25:75 and 75:25.

CONCLUSION

Although the foregoing embodiments have been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be practiced within the scope of the appended claims. It should be noted that there are many alternative ways of implementing the processes, systems, and apparatus of the present embodiments. Accordingly, the present embodiments are to be considered as illustrative and not restrictive, and the embodiments are not to be limited to the details given herein.

Claims

1. A method comprising: providing a substrate having a feature and field regions, wherein the feature is to be filled with metal, the feature including feature surfaces and a feature opening;performing an inhibition treatment to inhibit metal deposition on at least some of the feature surfaces;after performing the inhibition treatment, performing a first chemical vapor deposition (CVD) operation including exposing the feature to a metal precursor and hydrogen (H2);after performing the first CVD operation, performing a de-inhibition treatment to decrease inhibition; andafter decreasing inhibition, performing a second CVD operation to deposit metal in at least one of the feature or field regions.

2. The method of claim 1, wherein the de-inhibition treatment comprises exposing the feature to H2 gas or a plasma generated from H2 gas.

3. The method of claim 2, further comprising, exposing the feature to an argon gas or plasma with no reactive gas and with no reactive plasma species.

4. The method of claim 3, wherein the feature is exposed before performing the de-inhibition treatment.

5. The method of claim 3, wherein the feature is exposed after performing the de-inhibition treatment.

6. The method of claim 1, wherein the feature surfaces include sidewall surfaces and the inhibition treatment preferentially inhibits metal deposition on sidewall surfaces closer to the feature opening than further within the feature.

7. The method of claim 1, wherein the first CVD operation decreases inhibition without completely removing the inhibition.

8. The method of claim 1, wherein the first CVD operation partially fills the feature.

9. The method of claim 8, wherein the de-inhibition treatment completely removes any remaining inhibition from the feature.

10. The method of claim 1, wherein the de-inhibition treatment removes inhibition from the field regions.

11. The method of claim 1, wherein the de-inhibition treatment desorbs nitrogen from feature surfaces and/or field regions.

12. The method of claim 1, wherein the metal is one of tungsten (W), molybdenum (Mo), ruthenium (Ru), and cobalt (Co).

13. A method comprising: providing a substrate having a plurality of features separated by field regions, wherein the plurality of features is to be filled with metal,performing an inhibition treatment to inhibit metal deposition within the plurality of features and on the field regions:depositing metal in the plurality of features; andafter depositing metal in the plurality of features, performing a de-inhibition treatment to decrease inhibition on the field regions.

14. The method of claim 13, further comprising depositing an overburden layer on the field regions after performing the de-inhibition treatment.

15. The method of claim 13, wherein the de-inhibition treatment comprises exposing the feature to H2 gas or a plasma generated from H2 gas.

16. The method of claim 15, further comprising, before and/or after performing the de-inhibition treatment, exposing the feature to an argon gas or plasma with no reactive gas or plasma species.