for lateral devices with structured layout for source or drain region

Industry

CPC
H01L29/41758

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41758for lateral devices with structured layout for source or drain region

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor with unified transistor structure and voltage regulat...
- Patent number 11,955,544
- Issue date Apr 9, 2024
- Rohm Co., Ltd.
- Kentaro Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout techniques and optimization for power transistors
- Patent number 11,929,408
- Issue date Mar 12, 2024
- MACOM Technology Solutions Holdings, Inc.
- Shamit Som
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,901,433
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jheng-Sheng You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture design and process for manufacturing monolithically in...
- Patent number 11,901,360
- Issue date Feb 13, 2024
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit using monolithic flip-chip GaN power devices
- Patent number 11,888,332
- Issue date Jan 30, 2024
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment-tolerant gallium oxide device
- Patent number 11,876,115
- Issue date Jan 16, 2024
- United States of America as represented by the Secretary of the Air Force
- Eric Heller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field effect transistor with wrap-around contacts
- Patent number 11,869,893
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed level shift and inverter circuits for GaN devices
- Patent number 11,862,996
- Issue date Jan 2, 2024
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power transistors
- Patent number 11,862,536
- Issue date Jan 2, 2024
- MACOM Technology Solutions Holdings, Inc.
- Aram Mkhitarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having reduced capacitance between source and...
- Patent number 11,817,494
- Issue date Nov 14, 2023
- ANCORA SEMICONDUCTORS INC.
- Li-Fan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for layout-dependent voltage handling improveme...
- Patent number 11,817,456
- Issue date Nov 14, 2023
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor, method of manufacturing the same, and radi...
- Patent number 11,810,861
- Issue date Nov 7, 2023
- Sony Group Corporation
- Naoki Saka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and fabrication method therefor
- Patent number 11,777,024
- Issue date Oct 3, 2023
- Rohm Co., Ltd.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral transistor with extended source finger contact
- Patent number 11,769,807
- Issue date Sep 26, 2023
- Semiconductor Components Industries, LLC
- Woochul Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit using separately packaged GaN power devices
- Patent number 11,770,010
- Issue date Sep 26, 2023
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having contact plugs with narrower and wider portions
- Patent number 11,764,274
- Issue date Sep 19, 2023
- Winbond Electronics Corp.
- Cheng-Hong Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
- Patent number 11,756,998
- Issue date Sep 12, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain and/or gate interconnect and finger structure
- Patent number 11,757,013
- Issue date Sep 12, 2023
- Wolfspeed, Inc.
- Frank Trang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit using flip-chip GaN power devices
- Patent number 11,757,290
- Issue date Sep 12, 2023
- NAVITAS SEMICONDUCTOR LIMITED
- Daniel M. Kinzer
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 11,742,419
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertically stacked field effect transistors
- Patent number 11,728,348
- Issue date Aug 15, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor with gate poly contact...
- Patent number 11,721,738
- Issue date Aug 8, 2023
- Texas Instmments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a transistor
- Patent number 11,721,753
- Issue date Aug 8, 2023
- Power Integrations, Inc.
- Alexey Kudymov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,699,751
- Issue date Jul 11, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors including vertical gates with multiple dielectric...
- Patent number 11,699,753
- Issue date Jul 11, 2023
- Maxim Integrated Products, Inc.
- Tom K. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with ring-shaped doped region and manufacturin...
- Patent number 11,688,804
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Cheng Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device and semiconductor device
- Patent number 11,688,773
- Issue date Jun 27, 2023
- Sumitomo Electric Device Innovations, Inc.
- Shunsuke Kurachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and inverter
- Patent number 11,688,777
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including three-dimensional field-effect trans...
- Patent number 11,688,778
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Ryong Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ring transistor structure
- Patent number 11,664,431
- Issue date May 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER TRANSISTOR
- Publication number 20240136433
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240136408
- Publication date Apr 25, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Power Transistor Having Off-Axis Layout
- Publication number 20240128368
- Publication date Apr 18, 2024
- Microwave Technology Inc.
- Howard J. Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER W...
- Publication number 20240113168
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE
- Publication number 20240113180
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES
- Publication number 20240113169
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE
- Publication number 20240113051
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre Blin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OU...
- Publication number 20240113170
- Publication date Apr 4, 2024
- Skyworks Solutions, Inc.
- Guillaume Alexandre BLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alignment-Tolerant Gallium Oxide Device
- Publication number 20240105781
- Publication date Mar 28, 2024
- Government of the United States, as represented by the Secretary of the Air F...
- Eric Heller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20240096726
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Haohua MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240096735
- Publication date Mar 21, 2024
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Rai SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240030156
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Chang An LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE-BASED SEMICONDUCTOR DEVICE
- Publication number 20240030334
- Publication date Jan 25, 2024
- INFINEON TECHNOLOGIES AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240030338
- Publication date Jan 25, 2024
- Ancora Semiconductors Inc.
- Li-Fan LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE INSULATOR FOR HFET DEVICES
- Publication number 20240030337
- Publication date Jan 25, 2024
- Power Integrations, Inc.
- Alexey Kudymov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A DIE SEAL RING INCLUDING A TWO DIMENSIONAL ELECTRON GAS REGION
- Publication number 20240014308
- Publication date Jan 11, 2024
- Power Integrations, Inc.
- Kuo-Chang Robert YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
- Publication number 20230411508
- Publication date Dec 21, 2023
- ROHM CO., LTD.
- Kenji Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME
- Publication number 20230386978
- Publication date Nov 30, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- Masayuki KURODA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20230361170
- Publication date Nov 9, 2023
- MURATA MANUFACTURING CO., LTD.
- Fuminori MORISAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20230361208
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL TRANSISTOR DEVICE HAVING CONFORMAL LAYER
- Publication number 20230352580
- Publication date Nov 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon Douglas HAYNIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TERMINAL GALLIUM NITRIDE POWER TRANSISTOR
- Publication number 20230352542
- Publication date Nov 2, 2023
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230326985
- Publication date Oct 12, 2023
- Samsung Electronics Co., Ltd.
- Ryong HA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A LATERAL TRANSISTOR DEVICE AND AN INVE...
- Publication number 20230317804
- Publication date Oct 5, 2023
- Infineon Technologies Austria AG
- Oliver Häberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230307516
- Publication date Sep 28, 2023
- Kabushiki Kaisha Toshiba
- Yuta SUGIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20230307517
- Publication date Sep 28, 2023
- Mitsubishi Electric Corporation
- Shinsuke WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL FIELD-EFFECT TRANSISTOR AND PREPARING METHOD
- Publication number 20230299128
- Publication date Sep 21, 2023
- HUNAN SAN'AN SEMICONDUCTOR CO., LTD.
- Wenbi CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230290871
- Publication date Sep 14, 2023
- Kabushiki Kaisha Toshiba
- Toru SUGIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RING TRANSISTOR STRUCTURE
- Publication number 20230261066
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Aurelien Gauthier Brun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIRD'S BEAK PROFILE OF FIELD OXIDE REGION
- Publication number 20230253495
- Publication date Aug 10, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jingjing Chen
- H01 - BASIC ELECTRIC ELEMENTS

for lateral devices with structured layout for source or drain region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor with unified transistor structure and voltage regulat...

Layout techniques and optimization for power transistors

Semiconductor device

Architecture design and process for manufacturing monolithically in...

Half-bridge circuit using monolithic flip-chip GaN power devices

Alignment-tolerant gallium oxide device

Stacked field effect transistor with wrap-around contacts

Pulsed level shift and inverter circuits for GaN devices

High power transistors

Semiconductor device having reduced capacitance between source and...

Devices and methods for layout-dependent voltage handling improveme...

Field-effect transistor, method of manufacturing the same, and radi...

Nitride semiconductor device and fabrication method therefor

Lateral transistor with extended source finger contact

Half-bridge circuit using separately packaged GaN power devices

Memory device having contact plugs with narrower and wider portions

Source-channel junction for III-V metal-oxide-semiconductor field e...

Drain and/or gate interconnect and finger structure

Half-bridge circuit using flip-chip GaN power devices

Cap structure coupled to source to reduce saturation current in HEM...

Vertically stacked field effect transistors

Laterally diffused metal oxide semiconductor with gate poly contact...

Method of fabricating a transistor

Semiconductor device

LDMOS transistors including vertical gates with multiple dielectric...

Semiconductor device with ring-shaped doped region and manufacturin...

Method for manufacturing semiconductor device and semiconductor device

Semiconductor device and inverter

Semiconductor device including three-dimensional field-effect trans...

Ring transistor structure

Patents Applicationslast 30 patents

POWER TRANSISTOR

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

RF Power Transistor Having Off-Axis Layout

WIDE BANDGAP TRANSISTOR LAYOUT WITH UNEQUAL GATE ELECTRODE FINGER W...

WIDE BANDGAP TRANSISTOR LAYOUT WITH FOLDED GATE

WIDE BANDGAP TRANSISTOR LAYOUT WITH L-SHAPED GATE ELECTRODES

WIDE BANDGAP TRANSISTOR LAYOUT WITH DRAIN ON OUTER EDGE

WIDE BANDGAP TRANSISTOR LAYOUT WITH STAGGERED THROUGH WAFER VIAS OU...

Alignment-Tolerant Gallium Oxide Device

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GROUP III NITRIDE-BASED SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

PROTECTIVE INSULATOR FOR HFET DEVICES

A DIE SEAL RING INCLUDING A TWO DIMENSIONAL ELECTRON GAS REGION

NITRIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR COMPONENT INCLUDING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

THREE-DIMENSIONAL TRANSISTOR DEVICE HAVING CONFORMAL LAYER

MULTI-TERMINAL GALLIUM NITRIDE POWER TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING A LATERAL TRANSISTOR DEVICE AND AN INVE...

SEMICONDUCTOR DEVICE

TRANSISTOR

LATERAL FIELD-EFFECT TRANSISTOR AND PREPARING METHOD

SEMICONDUCTOR DEVICE

RING TRANSISTOR STRUCTURE

BIRD'S BEAK PROFILE OF FIELD OXIDE REGION