for transistors with a horizontal current flow in a vertical sidewall

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H01L29/41791

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41791for transistors with a horizontal current flow in a vertical sidewall

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Contact structures in semiconductor devices
- Patent number 12,315,863
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistant contact method and structure
- Patent number 12,300,729
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Sheng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive feature of semiconductor device and method of forming same
- Patent number 12,300,540
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Yu Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface oxidation control of metal gates using capping layer
- Patent number 12,293,916
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap patterning for metal-to-source/drain plugs in a semiconductor d...
- Patent number 12,293,947
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with source/drain contact
- Patent number 12,288,822
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Che Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,288,715
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit chip including gate electrode with oblique cut s...
- Patent number 12,288,749
- Issue date Apr 29, 2025
- Samsung Electronics Co., Ltd.
- Inyeal Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 12,288,810
- Issue date Apr 29, 2025
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped structure
- Patent number 12,288,809
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Miao-Syuan Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect features with sharp corners and method forming same
- Patent number 12,283,617
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tze-Liang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor device structures
- Patent number 12,283,527
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and stack of semiconductor chips
- Patent number 12,279,408
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Shaofeng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,278,147
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tun-Jen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing conductors for semiconductor device
- Patent number 12,278,230
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kam-Tou Sio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin FINFET device including epitaxial growth barrier on outsi...
- Patent number 12,278,234
- Issue date Apr 15, 2025
- Bell Semiconductor, LLC
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having adjacent struc...
- Patent number 12,272,737
- Issue date Apr 8, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming epitaxial source/drain features and semiconducto...
- Patent number 12,272,732
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Hung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having an anchor-shaped backside via
- Patent number 12,272,634
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device for source/drain backside contact and method of f...
- Patent number 12,272,733
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage reduction in gate-all-around devices
- Patent number 12,266,686
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including horizontal gate-all-around (hGAA) n...
- Patent number 12,266,704
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded stressors in epitaxy source/drain regions
- Patent number 12,266,572
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric structures for semiconductor device structures
- Patent number 12,266,703
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Che Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned interconnect structures and methods of fabrication
- Patent number 12,266,570
- Issue date Apr 1, 2025
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 12,266,654
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dual silicide formation using a maskless fabrication proc...
- Patent number 12,266,709
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement channel 2D material integration
- Patent number 12,261,209
- Issue date Mar 25, 2025
- Tokyo Electron Limited
- Robert D. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices by etching active fi...
- Patent number 12,261,087
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including isolation regions
- Patent number 12,261,200
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Min-Chul Sun
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250072041
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...
- Publication number 20250072039
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063776
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Hsin-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250063757
- Publication date Feb 20, 2025
- Sony Semiconductor Solutions Corporation
- RYOHEI TAKAYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250056832
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056862
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices and Semiconductor Dev...
- Publication number 20250048720
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chandrashekhar Prakash SAVANT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...
- Publication number 20250048698
- Publication date Feb 6, 2025
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20250040180
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND STORAGE DEVICE
- Publication number 20250040193
- Publication date Jan 30, 2025
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250040213
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Yi-Hsiang Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...
- Publication number 20250031403
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250022958
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-You TAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022941
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Beomjin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE-TYPE MEMORY WITH FIN FIELD-EFFECT TRANSISTOR
- Publication number 20250024668
- Publication date Jan 16, 2025
- EMEMORY TECHNOLOGY INC.
- Yi-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multigate Device Having Reduced Contact Resistivity
- Publication number 20250015154
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Co., LTD
- Georgios VELLIANITIS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...
- Publication number 20250006806
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS OF APPLYING STRESS IN TRANSISTORS
- Publication number 20240429307
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Rebecca Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...
- Publication number 20240429168
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Dalhee LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO CREATE AIR GAPS
- Publication number 20240429091
- Publication date Dec 26, 2024
- LAM RESEARCH CORPORATION
- Patrick A. Van Cleemput
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...
- Publication number 20240421214
- Publication date Dec 19, 2024
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CFETS AND THE METHODS OF FORMING THE SAME
- Publication number 20240413019
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ting-Yun Wu
- H01 - BASIC ELECTRIC ELEMENTS

for transistors with a horizontal current flow in a vertical sidewall

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Contact structures in semiconductor devices

Low resistant contact method and structure

Conductive feature of semiconductor device and method of forming same

Surface oxidation control of metal gates using capping layer

Gap patterning for metal-to-source/drain plugs in a semiconductor d...

Semiconductor device with source/drain contact

Semiconductor device and manufacturing method thereof

Integrated circuit chip including gate electrode with oblique cut s...

Backside contact structures and fabrication for metal on both sides...

Semiconductor device with doped structure

Interconnect features with sharp corners and method forming same

Methods of forming semiconductor device structures

Semiconductor device and stack of semiconductor chips

Semiconductor structure and method for forming the same

Method of manufacturing conductors for semiconductor device

Multi-fin FINFET device including epitaxial growth barrier on outsi...

Gate-all-around integrated circuit structures having adjacent struc...

Method for forming epitaxial source/drain features and semiconducto...

Semiconductor structure having an anchor-shaped backside via

Transistor device for source/drain backside contact and method of f...

Leakage reduction in gate-all-around devices

Semiconductor devices including horizontal gate-all-around (hGAA) n...

Embedded stressors in epitaxy source/drain regions

Dielectric structures for semiconductor device structures

Self-aligned interconnect structures and methods of fabrication

FinFET devices and methods of forming the same

Selective dual silicide formation using a maskless fabrication proc...

Replacement channel 2D material integration

Methods of manufacturing semiconductor devices by etching active fi...

Semiconductor device including isolation regions

Patents Applicationslast 30 patents

FINFET DEVICE STRUCTURE WITH EXTRA FIN

INTEGRATED CIRCUIT DEVICES

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

SEMICONDUCTOR DEVICE AND METHOD

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

Method of Manufacturing Semiconductor Devices and Semiconductor Dev...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING SOURCE OR DRAI...

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND STORAGE DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICES

ANTIFUSE-TYPE MEMORY WITH FIN FIELD-EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

Multigate Device Having Reduced Contact Resistivity

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED L...

SYSTEMS AND METHODS OF APPLYING STRESS IN TRANSISTORS

INTEGRATED CIRCUIT INCLUDING BACKSIDE WIRING AND METHOD OF DESIGNIN...

METHOD TO CREATE AIR GAPS

FIN-BASED FIELD EFFECT TRANSISTOR (FET) SOURCE/DRAIN STRAIN TO ENHA...

CFETS AND THE METHODS OF FORMING THE SAME