for transistors with a horizontal current flow in a vertical sidewall

Industry

CPC
H01L29/41791

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/41791for transistors with a horizontal current flow in a vertical sidewall

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure with source/drain structure having modified...
- Patent number 11,973,127
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective formation of titanium silicide and titanium nitride by hy...
- Patent number 11,972,951
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,117
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter block for recessed contacts and methods forming same
- Patent number 11,967,622
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Chih Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain contact having a protruding segment
- Patent number 11,968,817
- Issue date Apr 23, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for highly scaled transistors
- Patent number 11,961,892
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Carlos H. Diaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal silicide structures for advanced integrated circuit stru...
- Patent number 11,961,767
- Issue date Apr 16, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having nanosheet transistor and methods of fab...
- Patent number 11,961,887
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wen Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate structure
- Patent number 11,955,523
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Namgyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal gate structure having portions of metal gate layers in c...
- Patent number 11,955,532
- Issue date Apr 9, 2024
- Intel Corporation
- Jeffrey S. Leib
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous metal line compositions for advanced integrated circu...
- Patent number 11,955,534
- Issue date Apr 9, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming air spacers in semiconductor devices
- Patent number 11,955,535
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Hao Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including protruding insulation portions betw...
- Patent number 11,955,517
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with backside power rail and methods of fabric...
- Patent number 11,955,552
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,955,551
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain structures with high phosphorous dopant concentration
- Patent number 11,955,482
- Issue date Apr 9, 2024
- Intel Corporation
- Robert Ehlert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and method of forming the same
- Patent number 11,955,486
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,948,999
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,948,970
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain structure for semiconductor device
- Patent number 11,948,988
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-port SRAM cells with asymmetric M1 metalization
- Patent number 11,950,401
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate devices and fabricating the same with etch rate modulation
- Patent number 11,949,001
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Ching Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench contact structures for advanced integrated circuit structure...
- Patent number 11,948,997
- Issue date Apr 2, 2024
- Intel Corporation
- Subhash M. Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 11,949,013
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,942,367
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan Syun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having variously-shaped source/drain patterns
- Patent number 11,942,528
- Issue date Mar 26, 2024
- Hyun-Kwan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit contact structures
- Patent number 11,942,526
- Issue date Mar 26, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a cavity with a wet etch for backside contact formation
- Patent number 11,942,527
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing semiconductor devices
- Patent number 11,935,835
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Hyo-Jin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming integrated semiconductor device with 2D material...
- Patent number 11,935,890
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Cheng-Yi Peng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136418
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240136439
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Yuki TAKIGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION
- Publication number 20240128342
- Publication date Apr 18, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONTACT STRUCTURES
- Publication number 20240128340
- Publication date Apr 18, 2024
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION
- Publication number 20240120417
- Publication date Apr 11, 2024
- NEXGEN POWER SYSTEMS, INC.
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240120203
- Publication date Apr 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Chih HSIUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS
- Publication number 20240113205
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240113183
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240113120
- Publication date Apr 4, 2024
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SOURCE/DRAIN EPITAXY
- Publication number 20240105516
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...
- Publication number 20240105520
- Publication date Mar 28, 2024
- Intel Corporation
- Anthony ST. AMOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LE...
- Publication number 20240105794
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei-Yu WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH DOUBLE-SIDE CONTACTS
- Publication number 20240105797
- Publication date Mar 28, 2024
- QUALCOMM Incorporated
- Qingqing LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...
- Publication number 20240096988
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240096892
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- JHON JHY LIAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR DEVICE
- Publication number 20240096986
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Ting Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING
- Publication number 20240096999
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kai-Di Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE LAYER INTERCONNECTS
- Publication number 20240096791
- Publication date Mar 21, 2024
- Intel Corporation
- Mark Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTAN...
- Publication number 20240087952
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Mrunal A. Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP PATTERNING FOR METAL-TO-SOURCE/DRAIN PLUGS IN A SEMICONDUCTOR D...
- Publication number 20240087960
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240088267
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Yi PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20240088236
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Wen HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION
- Publication number 20240087884
- Publication date Mar 14, 2024
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUGS AND METHODS FORMING SAME
- Publication number 20240072155
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Hua Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performance Optimization By Sizing Gates And Source/Drain Contacts...
- Publication number 20240072137
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Li-Hui CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240072140
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Won Hyuk Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240072055
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240063276
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Heon Bok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20240055515
- Publication date Feb 15, 2024
- UNITED MICROELECTRONICS CORP.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...
- Publication number 20240055497
- Publication date Feb 15, 2024
- Intel Corporation
- Biswajeet GUHA
- H01 - BASIC ELECTRIC ELEMENTS

for transistors with a horizontal current flow in a vertical sidewall

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure with source/drain structure having modified...

Selective formation of titanium silicide and titanium nitride by hy...

Semiconductor device

Inter block for recessed contacts and methods forming same

Source/drain contact having a protruding segment

Contacts for highly scaled transistors

Dual metal silicide structures for advanced integrated circuit stru...

Semiconductor device having nanosheet transistor and methods of fab...

Semiconductor device including a gate structure

Dual metal gate structure having portions of metal gate layers in c...

Heterogeneous metal line compositions for advanced integrated circu...

Methods for forming air spacers in semiconductor devices

Semiconductor devices including protruding insulation portions betw...

Semiconductor device with backside power rail and methods of fabric...

Semiconductor device and manufacturing method thereof

Source or drain structures with high phosphorous dopant concentration

Integrated circuit device and method of forming the same

Semiconductor device

Semiconductor device and manufacturing method thereof

Source/drain structure for semiconductor device

Two-port SRAM cells with asymmetric M1 metalization

Multi-gate devices and fabricating the same with etch rate modulation

Trench contact structures for advanced integrated circuit structure...

Semiconductor device and method

Semiconductor device and method of manufacture

Semiconductor devices having variously-shaped source/drain patterns

Integrated circuit contact structures

Forming a cavity with a wet etch for backside contact formation

Methods of manufacturing semiconductor devices

Method for forming integrated semiconductor device with 2D material...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

FIELD-EFFECT TRANSISTOR, AND METHODS FOR PRODUCTION

INTEGRATED CIRCUIT CONTACT STRUCTURES

NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS

SEMICONDUCTOR DEVICE AND METHOD

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

ASYMMETRIC SOURCE/DRAIN EPITAXY

TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABR...

FIELD EFFECT TRANSISTOR WITH GATE ELECTRODE HAVING MULTIPLE GATE LE...

TRANSISTOR DEVICES WITH DOUBLE-SIDE CONTACTS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD FOR FORMING SEMICONDUCTOR DEVICE

SILICIDE STRUCTURES IN TRANSISTORS AND METHODS OF FORMING

DEVICE LAYER INTERCONNECTS

SEMICONDUCTOR STRUCTURE WITH MATERIAL MODIFICATION AND LOW RESISTAN...

GAP PATTERNING FOR METAL-TO-SOURCE/DRAIN PLUGS IN A SEMICONDUCTOR D...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

CONTACT PLUGS AND METHODS FORMING SAME

Performance Optimization By Sizing Gates And Source/Drain Contacts...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING ADJACENT DEEP...