forming drain [D] and lightly doped drain [LDD] simultaneously

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CPC
H01L29/66598

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66598forming drain [D] and lightly doped drain [LDD] simultaneously

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
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- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor layout to reduce kink effect
- Patent number 11,810,959
- Issue date Nov 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device including floating gat...
- Patent number 11,785,769
- Issue date Oct 10, 2023
- Winbond Electronics Corp.
- Hsin-Huang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor layout to reduce kink effect
- Patent number 11,688,784
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 11,424,254
- Issue date Aug 23, 2022
- Winbond Electronics Corp.
- Hsin-Huang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 11,373,872
- Issue date Jun 28, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising a lengthened gate
- Patent number 11,270,886
- Issue date Mar 8, 2022
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor layout to reduce kink effect
- Patent number 10,971,590
- Issue date Apr 6, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit, LDMOS with bottom gate and ballast drift
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- Issue date Feb 2, 2021
- Texas Instruments Incorporated
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
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- Issue date Dec 29, 2020
- Mitsubishi Electric Corporation
- Chikayuki Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor layout to reduce kink effect
- Patent number 10,861,951
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel strain inducing architecture and doping technique at replac...
- Patent number 10,861,972
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising a lengthened gate
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- Issue date Oct 6, 2020
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of forming finFET contact
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- Issue date Sep 22, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type thin film transistor, manufacturing method thereof and manuf...
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- Issue date Jun 2, 2020
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- Lei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-cost semiconductor device manufacturing method
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- Issue date Mar 10, 2020
- MagnaChip Semiconductor, Ltd.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit, LDMOS with trapezoid JFET, bottom gate and ball...
- Patent number 10,529,804
- Issue date Jan 7, 2020
- Texas Instruments Incorporated
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor layout to reduce kink effect
- Patent number 10,510,855
- Issue date Dec 17, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with H-shaped or U-shaped channels and method for formi...
- Patent number 10,381,459
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and fabrication method
- Patent number 10,361,283
- Issue date Jul 23, 2019
- Semiconductor Manufacturing International (Shanghai) Corporation
- Meng Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Long channels for transistors
- Patent number 10,355,103
- Issue date Jul 16, 2019
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of forming FinFET contact
- Patent number 10,347,744
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channel strain inducing architecture and doping technique at replac...
- Patent number 10,276,717
- Issue date Apr 30, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a transistor with reduced hot carrier injecti...
- Patent number 10,147,800
- Issue date Dec 4, 2018
- United Microelectronics Corp.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a gate conductor and methods of manufa...
- Patent number 10,128,351
- Issue date Nov 13, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain extended MOS transistors with split channel
- Patent number 10,103,244
- Issue date Oct 16, 2018
- Cypress Semiconductor Corporation
- Venkatraman Prabhakar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal oxide semiconductor field effect transistor, me...
- Patent number 10,062,770
- Issue date Aug 28, 2018
- United Microelectronics Corp.
- Chien-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,050,122
- Issue date Aug 14, 2018
- Renesas Electronics Corporation
- Hidekazu Oda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping method for array substrate and manufacturing equipment of th...
- Patent number 9,964,854
- Issue date May 8, 2018
- Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Jingfeng Xue
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
LTPS TFT substrate structure and method of forming the same
- Patent number 9,947,696
- Issue date Apr 17, 2018
- Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Gaiping Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230378316
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230326969
- Publication date Oct 12, 2023
- Macronix International Co., Ltd.
- Jeng Hwa Liao
- H01 - BASIC ELECTRIC ELEMENTS
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METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20230138401
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20220336481
- Publication date Oct 20, 2022
- WINBOND ELECTRONICS CORP.
- Hsin-Huang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LAYOUT TO REDUCE KINK EFFECT
- Publication number 20220293758
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...
- Publication number 20220277960
- Publication date Sep 1, 2022
- KEY FOUNDRY CO., LTD.
- Hee Hwan JI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH SILICIDE LAYER AND FABRICATING METHOD OF...
- Publication number 20210313447
- Publication date Oct 7, 2021
- UNITED MICROELECTRONICS CORP.
- HAO SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LAYOUT TO REDUCE KINK EFFECT
- Publication number 20210217868
- Publication date Jul 15, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20210183874
- Publication date Jun 17, 2021
- WINBOND ELECTRONICS CORP.
- Hsin-Huang Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING A LENGTHENED GATE
- Publication number 20200395466
- Publication date Dec 17, 2020
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT, LDMOS WITH BOTTOM GATE AND BALLAST DRIFT
- Publication number 20200135860
- Publication date Apr 30, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LAYOUT TO REDUCE KINK EFFECT
- Publication number 20200058749
- Publication date Feb 20, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LAYOUT TO REDUCE KINK EFFECT
- Publication number 20190378905
- Publication date Dec 12, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING FINFET CONTACT
- Publication number 20190296129
- Publication date Sep 26, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNELS FOR TRANSISTORS
- Publication number 20190252520
- Publication date Aug 15, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL STRAIN INDUCING ARCHITECTURE AND DOPING TECHNIQUE AT REPLAC...
- Publication number 20190245089
- Publication date Aug 8, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE OF FORMING FINFET CONTACT
- Publication number 20190214481
- Publication date Jul 11, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...
- Publication number 20190214482
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNELS FOR TRANSISTORS
- Publication number 20190189776
- Publication date Jun 20, 2019
- International Business Machines Corporation
- ROBIN HSIN KUO CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR LAYOUT TO REDUCE KINK EFFECT
- Publication number 20190148507
- Publication date May 16, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL ENGINEERING FOR ENHANCED DEVICE PERFORMANCE IN ADVANCED DE...
- Publication number 20190103474
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- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT, LDMOS WITH TRAPEZOID JFET, BOTTOM GATE AND BALL...
- Publication number 20190058039
- Publication date Feb 21, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Jun Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
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- Publication number 20190027581
- Publication date Jan 24, 2019
- STMicroelectronics (Rousset) SAS
- Julien Delalleau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET device manufacturing using a modified Ion implantation method
- Publication number 20180083119
- Publication date Mar 22, 2018
- Pedro Guillen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-COST SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20170263762
- Publication date Sep 14, 2017
- Magnachip Semiconductor, Ltd.
- Francois HEBERT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A TRANSISTOR WITH REDUCED HOT CARRIER INJECTI...
- Publication number 20170243950
- Publication date Aug 24, 2017
- UNITED MICROELECTRONICS CORP.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURE METHOD OF TFT SUBSTRATE STRUCTURE AND TFT SUBSTRATE STR...
- Publication number 20170170202
- Publication date Jun 15, 2017
- Wenshuai Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LTPS TFT Substrate Structure and Method of Forming the Same
- Publication number 20170110489
- Publication date Apr 20, 2017
- SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Gaiping LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, ME...
- Publication number 20170047426
- Publication date Feb 16, 2017
- UNITED MICROELECTRONICS CORP.
- Chien-Ting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20170040226
- Publication date Feb 9, 2017
- RENESAS ELECTRONICS CORPORATION
- Hidekazu ODA
- H01 - BASIC ELECTRIC ELEMENTS

forming drain [D] and lightly doped drain [LDD] simultaneously

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Transistor layout to reduce kink effect

Manufacturing method of semiconductor device including floating gat...

Transistor layout to reduce kink effect

Semiconductor device and manufacturing method of the same

Manufacturing method of semiconductor device using gate-through imp...

Transistor comprising a lengthened gate

Transistor layout to reduce kink effect

Integrated circuit, LDMOS with bottom gate and ballast drift

Method for manufacturing semiconductor device

Transistor layout to reduce kink effect

Channel strain inducing architecture and doping technique at replac...

Transistor comprising a lengthened gate

Method and structure of forming finFET contact

N-type thin film transistor, manufacturing method thereof and manuf...

Low-cost semiconductor device manufacturing method

Integrated circuit, LDMOS with trapezoid JFET, bottom gate and ball...

Transistor layout to reduce kink effect

Transistors with H-shaped or U-shaped channels and method for formi...

MOS transistor and fabrication method

Long channels for transistors

Method and structure of forming FinFET contact

Channel strain inducing architecture and doping technique at replac...

Method of fabricating a transistor with reduced hot carrier injecti...

Semiconductor devices having a gate conductor and methods of manufa...

Drain extended MOS transistors with split channel

Complementary metal oxide semiconductor field effect transistor, me...

Semiconductor device and manufacturing method of the same

Doping method for array substrate and manufacturing equipment of th...

LTPS TFT substrate structure and method of forming the same

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

TRANSISTOR LAYOUT TO REDUCE KINK EFFECT

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING GATE-THROUGH IMP...

TRANSISTOR STRUCTURE WITH SILICIDE LAYER AND FABRICATING METHOD OF...

TRANSISTOR LAYOUT TO REDUCE KINK EFFECT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

TRANSISTOR COMPRISING A LENGTHENED GATE

INTEGRATED CIRCUIT, LDMOS WITH BOTTOM GATE AND BALLAST DRIFT

TRANSISTOR LAYOUT TO REDUCE KINK EFFECT

TRANSISTOR LAYOUT TO REDUCE KINK EFFECT

METHOD AND STRUCTURE OF FORMING FINFET CONTACT

LONG CHANNELS FOR TRANSISTORS

CHANNEL STRAIN INDUCING ARCHITECTURE AND DOPING TECHNIQUE AT REPLAC...

METHOD AND STRUCTURE OF FORMING FINFET CONTACT

TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...

LONG CHANNELS FOR TRANSISTORS

TRANSISTOR LAYOUT TO REDUCE KINK EFFECT

SIDEWALL ENGINEERING FOR ENHANCED DEVICE PERFORMANCE IN ADVANCED DE...

INTEGRATED CIRCUIT, LDMOS WITH TRAPEZOID JFET, BOTTOM GATE AND BALL...

TRANSISTOR COMPRISING A LENGTHENED GATE

FET device manufacturing using a modified Ion implantation method

LOW-COST SEMICONDUCTOR DEVICE MANUFACTURING METHOD

METHOD OF FABRICATING A TRANSISTOR WITH REDUCED HOT CARRIER INJECTI...

MANUFACTURE METHOD OF TFT SUBSTRATE STRUCTURE AND TFT SUBSTRATE STR...

LTPS TFT Substrate Structure and Method of Forming the Same

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, ME...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME