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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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Patents Grantslast 30 patents

Information Patent Grant
Inner filler layer for multi-patterned metal gate for nanostructure...
- Patent number 12,255,100
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,206
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including backside contact structure having po...
- Patent number 12,255,248
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner spacer structures for gate-all-around field effect transistors
- Patent number 12,255,249
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 12,255,230
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming of inner spacer structure using semiconductor ma...
- Patent number 12,255,102
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET replacement gate formation with variable fin pitch
- Patent number 12,255,204
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 12,255,245
- Issue date Mar 18, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etching method and semiconductor structure manufactured u...
- Patent number 12,255,074
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuan-Da Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fin-on-nanosheet transistor stacks
- Patent number 12,255,099
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implantation of nanostructures for nano-FET
- Patent number 12,255,101
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,257
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Mongsong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner layer for backside contacts of semiconductor devices
- Patent number 12,255,239
- Issue date Mar 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Mrunal Abhijith Khaderbad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,255,135
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Kyung Yong Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory cell
- Patent number 12,250,824
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate device structure with engineered cladding and method maki...
- Patent number 12,249,539
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wen Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with dielectric fin feature
- Patent number 12,249,621
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Guan-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoribbon thick gate devices with differential ribbon spacing and...
- Patent number 12,249,622
- Issue date Mar 11, 2025
- Intel Corporation
- Tanuj Trivedi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device including multiple inner spacers with differen...
- Patent number 12,249,639
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning gate lengths in multi-gate field effect transistors
- Patent number 12,249,636
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Hao Pao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including epitaxial region
- Patent number 12,249,505
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Gyeom Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ternary inverter and method of manufacturing the same
- Patent number 12,249,605
- Issue date Mar 11, 2025
- UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,249,637
- Issue date Mar 11, 2025
- SOCIONEXT INC.
- Junji Iwahori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked planar field effect transistors with 2D material channels
- Patent number 12,249,643
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 12,249,656
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, method of manufacturing the same and electron...
- Patent number 12,249,544
- Issue date Mar 11, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices having parasitic channel structures
- Patent number 12,249,623
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Cheng Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned backside contact integration for transistors
- Patent number 12,243,913
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Nikhil Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with dielectric liners on gate refill metal
- Patent number 12,243,918
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yuan-Hsiang Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072107
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- SUNGIL PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072048
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Youngjin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250072053
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- MYUNG GIL KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etch Selectivity Modulation by Fluorocarbon Treatment
- Publication number 20250069896
- Publication date Feb 27, 2025
- TOKYO ELECTRON LIMITED
- Ivo Otto IV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND STORAGE SYSTEM
- Publication number 20250071981
- Publication date Feb 27, 2025
- CXMT Corporation
- Yanzhe TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES
- Publication number 20250072049
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Chien WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Stack for Multigate Device
- Publication number 20250072051
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Wei LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD
- Publication number 20250072065
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
- Publication number 20250072096
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Gi Woong SHIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
- Publication number 20250072099
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072100
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Te TU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250070021
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Ki-Il KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20250072037
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET GATE METAL SCHEME COMPATIBLE WITH AGGRESSIVE GATE WIDTH S...
- Publication number 20250072050
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chung-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...
- Publication number 20250072105
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Xia LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...
- Publication number 20250072106
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Jisoo PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072066
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Wooseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250072067
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- SHIH-CHENG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072031
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072058
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jer-Fu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...
- Publication number 20250062190
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063808
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- KUAN-TING PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063790
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Uei Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20250063711
- Publication date Feb 20, 2025
- SOCIONEXT INC.
- Yoshinobu YAMAGAMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION MODULE FOR BACKSIDE POWER DELIVERY
- Publication number 20250063797
- Publication date Feb 20, 2025
- Applied Materials, Inc.
- Kyoung Ha KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063811
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS

fully surrounding the channel

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Inner filler layer for multi-patterned metal gate for nanostructure...

Semiconductor device

Semiconductor device including backside contact structure having po...

Inner spacer structures for gate-all-around field effect transistors

Semiconductor structure and method for forming the same

Methods of forming of inner spacer structure using semiconductor ma...

Vertical FET replacement gate formation with variable fin pitch

Manufacturing method of semiconductor device

Selective etching method and semiconductor structure manufactured u...

Methods of forming fin-on-nanosheet transistor stacks

Ion implantation of nanostructures for nano-FET

Semiconductor device

Liner layer for backside contacts of semiconductor devices

Semiconductor device

Ferroelectric memory cell

Multigate device structure with engineered cladding and method maki...

Semiconductor structure with dielectric fin feature

Nanoribbon thick gate devices with differential ribbon spacing and...

Semiconductor device including multiple inner spacers with differen...

Tuning gate lengths in multi-gate field effect transistors

Semiconductor device including epitaxial region

Ternary inverter and method of manufacturing the same

Integrated circuit device

Semiconductor integrated circuit device

Stacked planar field effect transistors with 2D material channels

Transistor, integrated circuit, and manufacturing method of transistor

Semiconductor device, method of manufacturing the same and electron...

Semiconductor devices having parasitic channel structures

Self-aligned backside contact integration for transistors

Semiconductor device with dielectric liners on gate refill metal

Patents Applicationslast 30 patents

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

SEMICONDUCTOR DEVICES

Etch Selectivity Modulation by Fluorocarbon Treatment

MEMORY AND STORAGE SYSTEM

SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES

Gate Stack for Multigate Device

FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD

METHODS OF FABRICATING SEMICONDUCTOR DEVICES

REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...

NANOSHEET GATE METAL SCHEME COMPATIBLE WITH AGGRESSIVE GATE WIDTH S...

VERTICAL STRUCTURE-BASED FIELD EFFECT TRANSISTOR (FET) INPUT/OUTPUT...

THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING TH...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

STACKED FET WITH BOTTOM EPI SIZE CONTROL AND WRAPAROUND BACKSIDE CO...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STORAGE DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

ISOLATION MODULE FOR BACKSIDE POWER DELIVERY

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...