further characterised by the doping material

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CPC
H01L29/167

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/167further characterised by the doping material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Gate-all-around integrated circuit structures having germanium-dope...
- Patent number 12,166,124
- Issue date Dec 10, 2024
- Intel Corporation
- Ryan Hickey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,159,872
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance
- Patent number 12,148,800
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Sahwan Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact over active gate structures for advanced integrated circuit...
- Patent number 12,142,667
- Issue date Nov 12, 2024
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,132,119
- Issue date Oct 29, 2024
- Samsung Electronics Co., Ltd.
- Kihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,125,878
- Issue date Oct 22, 2024
- Kioxia Corporation
- Tomonari Shioda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with logic and memory
- Patent number 12,120,880
- Issue date Oct 15, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having semiconductor device elements in a semi...
- Patent number 12,107,130
- Issue date Oct 1, 2024
- Infineon Technologies AG
- Ingo Muri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with cap layer
- Patent number 12,107,165
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic-doped epitaxial source/drain regions for NMOS
- Patent number 12,094,881
- Issue date Sep 17, 2024
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device, compound semiconductor substrate, an...
- Patent number 12,087,852
- Issue date Sep 10, 2024
- Air Water Inc.
- Shigeomi Hishiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for FinFET device with source/drain modulation
- Patent number 12,080,607
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser radiation system
- Patent number 12,072,507
- Issue date Aug 27, 2024
- Gigaphoton Inc.
- Osamu Wakabayashi
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for FinFET LDD doping
- Patent number 12,068,371
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing source/drain dopant concentration to reduced resistance
- Patent number 12,062,710
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial source/drain structure and method of forming same
- Patent number 12,062,720
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, semiconductor device manufacturing method, in...
- Patent number 12,062,691
- Issue date Aug 13, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo Shimizu
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,062,580
- Issue date Aug 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a device comprising graphene
- Patent number 12,059,560
- Issue date Aug 13, 2024
- Centre National de la Recherche Scientifique
- Dipankar Kalita
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
Gate cut and fin trim isolation for advanced integrated circuit str...
- Patent number 12,057,492
- Issue date Aug 6, 2024
- Intel Corporation
- Tahir Ghani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device and method for forming a superjunct...
- Patent number 12,034,040
- Issue date Jul 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with logic and memory
- Patent number 12,035,531
- Issue date Jul 9, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor semiconductor device and corresponding manufacturing method
- Patent number 12,034,046
- Issue date Jul 9, 2024
- STMicroelectronics (Crolles 2) SAS
- Nicolas Guitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistivity wafer
- Patent number 12,031,231
- Issue date Jul 9, 2024
- Sumco Corporation
- Yasuhito Narushima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transistor structure and manufacturing method thereof
- Patent number 12,027,584
- Issue date Jul 2, 2024
- Macronix International Co., Ltd.
- Jeng Hwa Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random-access memory (SRAM) bit cell with channel depopulation
- Patent number 12,029,021
- Issue date Jul 2, 2024
- Intel Corporation
- Peng Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a heterostructure or a stacked semiconducto...
- Patent number 12,027,592
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming source/drain epitaxial stacks
- Patent number 12,021,142
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with logic and memory
- Patent number 12,016,181
- Issue date Jun 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...
- Publication number 20250006790
- Publication date Jan 2, 2025
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240387725
- Publication date Nov 21, 2024
- Fuji Electric Co., Ltd.
- Keiji OKUMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379677
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240371945
- Publication date Nov 7, 2024
- GLOBALWAFERS CO., LTD.
- Ying-Ru Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240363692
- Publication date Oct 31, 2024
- FUJI ELECTRIC CO., LTD.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Source/Drain Structure and Method of Forming Same
- Publication number 20240363753
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
- Publication number 20240363754
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION
- Publication number 20240363435
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240355681
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE
- Publication number 20240355910
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Jing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY
- Publication number 20240349504
- Publication date Oct 17, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY
- Publication number 20240334701
- Publication date Oct 3, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...
- Publication number 20240332399
- Publication date Oct 3, 2024
- Intel Corporation
- Tahir GHANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTIVITY WAFER
- Publication number 20240328034
- Publication date Oct 3, 2024
- SUMCO CORPORATION
- Yasuhito NARUSHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20240321953
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240321947
- Publication date Sep 26, 2024
- Fuji Electric Co., Ltd.
- Naoyuki OHSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO-SHEET-BASED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES WI...
- Publication number 20240313119
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS
- Publication number 20240304723
- Publication date Sep 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Brian Edward Hornung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE INCLUDING AS-GROWN GRAPHENE AND SEMICONDUCTOR...
- Publication number 20240297221
- Publication date Sep 5, 2024
- Samsung Electronics Co., LTD
- Changseok LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240297201
- Publication date Sep 5, 2024
- SUMCO CORPORATION
- Takeshi Kadono
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240282822
- Publication date Aug 22, 2024
- Kokusai Electric Corporation
- Masahiro TAKAHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...
- Publication number 20240282801
- Publication date Aug 22, 2024
- SUMCO CORPORATION
- Takeshi KADONO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION
- Publication number 20240284652
- Publication date Aug 22, 2024
- Intel Corporation
- Peng ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM Circuitry And Method Of Forming DRAM Circuitry
- Publication number 20240276714
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Toshihiko Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Publication number 20240258427
- Publication date Aug 1, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240250138
- Publication date Jul 25, 2024
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL FIN STATIC INDUCTION TRANSISTOR
- Publication number 20240250160
- Publication date Jul 25, 2024
- HRL LABORATORIES, LLC
- Biqin HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...
- Publication number 20240243174
- Publication date Jul 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Ming Chen
- H01 - BASIC ELECTRIC ELEMENTS

further characterised by the doping material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Gate-all-around integrated circuit structures having germanium-dope...

IC including standard cells and SRAM cells

Semiconductor device with reduced contact resistance

Method for forming source/drain contacts

Contact over active gate structures for advanced integrated circuit...

Semiconductor devices

Semiconductor device and manufacturing method thereof

3D semiconductor device and structure with logic and memory

Semiconductor device having semiconductor device elements in a semi...

Semiconductor device structure with cap layer

Arsenic-doped epitaxial source/drain regions for NMOS

Compound semiconductor device, compound semiconductor substrate, an...

Structure and method for FinFET device with source/drain modulation

Laser radiation system

Method for FinFET LDD doping

Increasing source/drain dopant concentration to reduced resistance

Epitaxial source/drain structure and method of forming same

Semiconductor device, semiconductor device manufacturing method, in...

Method of manufacturing a semiconductor device and a semiconductor...

Method of forming a device comprising graphene

Gate cut and fin trim isolation for advanced integrated circuit str...

Superjunction transistor device and method for forming a superjunct...

3D semiconductor device and structure with logic and memory

Thyristor semiconductor device and corresponding manufacturing method

Low resistivity wafer

Transistor structure and manufacturing method thereof

Static random-access memory (SRAM) bit cell with channel depopulation

Method of manufacturing a heterostructure or a stacked semiconducto...

Method of forming source/drain epitaxial stacks

3D semiconductor device and structure with logic and memory

Patents Applicationslast 30 patents

TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRA...

SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE SUBSTRATE AND MANUFACTURING METHOD THEREOF

SILICON CARBIDE SEMICONDUCTOR DEVICE

Epitaxial Source/Drain Structure and Method of Forming Same

SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER

STRUCTURE AND METHOD FOR FINFET DEVICE WITH SOURCE/DRAIN MODULATION

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY

GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STR...

LOW RESISTIVITY WAFER

SUPERJUNCTION TRANSISTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

NANO-SHEET-BASED COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES WI...

TWO-ROTATION GATE-EDGE DIODE LEAKAGE REDUCTION FOR MOS

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS

TRANSISTOR STRUCTURE INCLUDING AS-GROWN GRAPHENE AND SEMICONDUCTOR...

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

SEMICONDUCTOR DEVICE

METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EP...

STATIC RANDOM-ACCESS MEMORY (SRAM) BIT CELL WITH CHANNEL DEPOPULATION

DRAM Circuitry And Method Of Forming DRAM Circuitry

SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES

SEMICONDUCTOR DEVICE

LATERAL FIN STATIC INDUCTION TRANSISTOR

DIFFUSION BARRIER LAYER FOR SOURCE AND DRAIN STRUCTURES TO INCREASE...