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Gallium nitride
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CPC
C30B29/406
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Parent Industries
C
CHEMISTRY METALLURGY
C30
Crystal growth
C30B
SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...
C30B29/00
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Current Industry
C30B29/406
Gallium nitride
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Patents Grants
last 30 patents
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Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
Patent number
11,965,268
Issue date
Apr 23, 2024
IV WORKS CO., LTD.
Vianney Leroux
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing GaN layered substrate
Patent number
11,967,530
Issue date
Apr 23, 2024
Shin-Etsu Chemical Co., Ltd.
Sumio Sekiyama
B32 - LAYERED PRODUCTS
Information
Patent Grant
Method for manufacturing a semiconductor substrate and device by bo...
Patent number
11,961,765
Issue date
Apr 16, 2024
Mitsubishi Electric Corporation
Shuichi Hiza
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group III nitride semiconductor device and production method therefor
Patent number
11,955,581
Issue date
Apr 9, 2024
Toyoda Gosei Co., Ltd.
Koji Okuno
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for manufacturable large area gallium and nitrogen containin...
Patent number
11,949,212
Issue date
Apr 2, 2024
KYOCERA SLD Laser, Inc.
Melvin McLaurin
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for manufacturing nitride semiconductor device
Patent number
11,935,744
Issue date
Mar 19, 2024
Sumitomo Electric Industries, Ltd.
Isao Makabe
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Oxygen-doped group III metal nitride and method of manufacture
Patent number
11,898,269
Issue date
Feb 13, 2024
SLT TECHNOLOGIES, INC.
Wenkan Jiang
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
Patent number
11,891,719
Issue date
Feb 6, 2024
IV WORKS CO., LTD.
Vianney Leroux
C30 - CRYSTAL GROWTH
Information
Patent Grant
High pressure spatial chemical vapor deposition system and related...
Patent number
11,885,018
Issue date
Jan 30, 2024
Lehigh University
Siddha Pimputkar
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Manufacturing apparatus for a group-III nitride crystal comprising...
Patent number
11,879,184
Issue date
Jan 23, 2024
Panasonic Holdings Corporation
Yusuke Mori
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Gallium nitride vapor phase epitaxy apparatus used in vapor phase e...
Patent number
11,869,767
Issue date
Jan 9, 2024
NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
Shugo Nitta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method of producing a two-dimensional material
Patent number
11,848,206
Issue date
Dec 19, 2023
Paragraf Ltd.
Simon Charles Stewart Thomas
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Method for printing wide bandgap semiconductor materials
Patent number
11,823,900
Issue date
Nov 21, 2023
The Johns Hopkins University
Jarod C. Gagnon
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for reducing lateral growth of GaN crystals in an ammonother...
Patent number
11,821,108
Issue date
Nov 21, 2023
Instytut Wysokich Cisnien Polskiej Akademii Nauk
Karolina Grabianska
C30 - CRYSTAL GROWTH
Information
Patent Grant
Conductive C-plane GaN substrate
Patent number
11,810,782
Issue date
Nov 7, 2023
Mitsubishi Chemical Corporation
Yutaka Mikawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Gallium nitride-based sintered compact and method for manufacturing...
Patent number
11,802,049
Issue date
Oct 31, 2023
Tosoh Corporation
Masami Mesuda
C01 - INORGANIC CHEMISTRY
Information
Patent Grant
Optimized heteroepitaxial growth of semiconductors
Patent number
11,795,575
Issue date
Oct 24, 2023
United States of America as represented by the Secretary of the Air Force
Vladimir Tassev
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing group III nitride crystal by reacting an ox...
Patent number
11,795,573
Issue date
Oct 24, 2023
Osaka University
Yusuke Mori
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
Patent number
11,795,574
Issue date
Oct 24, 2023
United States of America as represented by the Secretary of the Air Force
Vladimir Tassev
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Monochromatic emitters on coalesced selective area growth nanocolumns
Patent number
11,799,054
Issue date
Oct 24, 2023
Najeeb Ashraf Khalid
C30 - CRYSTAL GROWTH
Information
Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
Patent number
11,788,202
Issue date
Oct 17, 2023
United States of America as represented by the Secretary of the Air Force
Vladimir Tassev
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for manufacturing hexagonal semiconductor plate crystal
Patent number
11,772,301
Issue date
Oct 3, 2023
Mitsubishi Chemical Corporation
Hirofumi Uchida
C30 - CRYSTAL GROWTH
Information
Patent Grant
Reusable nitride wafer, method of making, and use thereof
Patent number
RE49677
Issue date
Oct 3, 2023
SLT TECHNOLOGIES, INC.
Mark P. D'Evelyn
Information
Patent Grant
Low-dislocation bulk GaN crystal and method of fabricating same
Patent number
11,767,609
Issue date
Sep 26, 2023
Sixpoint Materials, Inc.
Tadao Hashimoto
C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information
Patent Grant
Optimized heteroepitaxial growth of semiconductors
Patent number
11,761,116
Issue date
Sep 19, 2023
United States of America as represented by the Secretary of the Air Force
Vladimir Tassev
C30 - CRYSTAL GROWTH
Information
Patent Grant
Optimized heteroepitaxial growth of semiconductors
Patent number
11,761,115
Issue date
Sep 19, 2023
United States of America as represented by the Secretary of the Air Force
Vladimir Tassev
C30 - CRYSTAL GROWTH
Information
Patent Grant
Integrated circuit devices with an engineered substrate
Patent number
11,735,460
Issue date
Aug 22, 2023
QROMIS, Inc.
Vladimir Odnoblyudov
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Group III nitride crystal substrate having a diameter of 4 inches o...
Patent number
11,718,927
Issue date
Aug 8, 2023
Sumitomo Chemical Company, Limited
Takehiro Yoshida
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group-III nitride substrate
Patent number
11,713,517
Issue date
Aug 1, 2023
Panasonic Holdings Corporation
Yusuke Mori
C30 - CRYSTAL GROWTH
Information
Patent Grant
Group III nitride substrate, method of making, and method of use
Patent number
11,705,322
Issue date
Jul 18, 2023
SLT TECHNOLOGIES, INC.
Wenkan Jiang
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
TEMPLATE SUBSTRATE, METHOD AND APPARATUS FOR MANUFACTURING TEMPLATE...
Publication number
20240145622
Publication date
May 2, 2024
KYOCERA CORPORATION
Takeshi KAMIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
Publication number
20240136181
Publication date
Apr 25, 2024
KYOCERA CORPORATION
Katsuaki MASAKI
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
Publication number
20240133076
Publication date
Apr 25, 2024
SLT TECHNOLOGIES, INC.
Wenkan JIANG
C01 - INORGANIC CHEMISTRY
Information
Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME
Publication number
20240117525
Publication date
Apr 11, 2024
Shin-Etsu Handotai Co., Ltd.
Keitaro TSUCHIYA
C30 - CRYSTAL GROWTH
Information
Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, METHOD FOR PRODUCING SAM...
Publication number
20240112909
Publication date
Apr 4, 2024
Panasonic Intellectual Property Management Co., Ltd.
Hisayoshi MATSUO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
Publication number
20240105449
Publication date
Mar 28, 2024
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Publication number
20240072198
Publication date
Feb 29, 2024
KYOCERA CORPORATION
Takeshi KAMIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
APPARATUS FOR PRINTING WIDE BANDGAP SEMICONDUCTOR MATERIALS
Publication number
20240047206
Publication date
Feb 8, 2024
The Johns Hopkins University
Jarod C. Gagnon
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...
Publication number
20230411151
Publication date
Dec 21, 2023
SOITEC
Eric Guiot
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR EPITAXIAL GROWTH OF A GALLIUM-...
Publication number
20230411140
Publication date
Dec 21, 2023
SOITEC
Eric Guiot
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SEMICONDUCTOR, GROUP I...
Publication number
20230399770
Publication date
Dec 14, 2023
Panasonic Intellectual Property Management Co., Ltd.
AKIO UETA
C30 - CRYSTAL GROWTH
Information
Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
Publication number
20230392280
Publication date
Dec 7, 2023
MITSUBISHI CHEMICAL CORPORATION
Yutaka MIKAWA
C30 - CRYSTAL GROWTH
Information
Patent Application
Semiconductor Photoelectrode and Method for Manufacturing Same
Publication number
20230392269
Publication date
Dec 7, 2023
Nippon Telegraph and Telephone Corporation
Yuya Uzumaki
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
METHOD FOR PRODUCING A SUBSTRATE FOR THE EPITAXIAL GROWTH OF A LAYE...
Publication number
20230374701
Publication date
Nov 23, 2023
SOITEC
Eric Guiot
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Publication number
20230360910
Publication date
Nov 9, 2023
GLOBALWAFERS CO., LTD.
PO-JUNG LIN
C30 - CRYSTAL GROWTH
Information
Patent Application
EPITAXIAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Publication number
20230360909
Publication date
Nov 9, 2023
GLOBALWAFERS CO., LTD.
PO-JUNG LIN
C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information
Patent Application
LARGE AREA GROUP III NITRIDE CRYSTALS AND SUBSTRATES, METHODS OF MA...
Publication number
20230340695
Publication date
Oct 26, 2023
SLT TECHNOLOGIES, INC.
Dirk EHRENTRAUT
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP-III NITRIDE SUBSTRATE
Publication number
20230323563
Publication date
Oct 12, 2023
Panasonic Holdings Corporation
Yusuke MORI
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP III NITRIDE SUBSTRATE, METHOD OF MAKING, AND METHOD OF USE
Publication number
20230317444
Publication date
Oct 5, 2023
SLT TECHNOLOGIES, INC.
Wenkan JIANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GROUP III NITRIDE SUBSTRATE AND METHOD OF MAKING
Publication number
20230295839
Publication date
Sep 21, 2023
SLT TECHNOLOGIES, INC.
Keiji FUKUTOMI
C30 - CRYSTAL GROWTH
Information
Patent Application
NITRIDE EPITAXIAL STRUCTURE AND SEMICONDUCTOR DEVICE
Publication number
20230290742
Publication date
Sep 14, 2023
HUAWEI TECHNOLOGIES CO., LTD.
Zhibin Chen
C30 - CRYSTAL GROWTH
Information
Patent Application
SEMICONDUCTOR SUBSTRATE WITH NITRIDED INTERFACE LAYER
Publication number
20230274934
Publication date
Aug 31, 2023
IVWorks Co., Ltd.
Florian TENDILLE
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR
Publication number
20230257902
Publication date
Aug 17, 2023
Toyoda Gosei Co., Ltd.
Takayuki SATO
C30 - CRYSTAL GROWTH
Information
Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
Publication number
20230253461
Publication date
Aug 10, 2023
MITSUBISHI CHEMICAL CORPORATION
Satoru NAGAO
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR PHASE GROWTH, VAPOR PHAS...
Publication number
20230235481
Publication date
Jul 27, 2023
Shin-Etsu Handotai Co., Ltd.
Keitaro TSUCHIYA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
Publication number
20230235480
Publication date
Jul 27, 2023
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
Can Bayram
C30 - CRYSTAL GROWTH
Information
Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
Publication number
20230220587
Publication date
Jul 13, 2023
NGK Insulators, Ltd.
Masahiro SAKAI
C30 - CRYSTAL GROWTH
Information
Patent Application
GAN CRYSTAL AND GAN SUBSTRATE
Publication number
20230203711
Publication date
Jun 29, 2023
MITSUBISHI CHEMICAL CORPORATION
Yusuke TSUKADA
C30 - CRYSTAL GROWTH
Information
Patent Application
METHOD FOR PREPARING A SELF-SUPPORTING SUBSTRATE
Publication number
20230175167
Publication date
Jun 8, 2023
Yiguan information technology (Shanghai) Co., Ltd.
Tao Jiang
C30 - CRYSTAL GROWTH
Information
Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
Publication number
20230178367
Publication date
Jun 8, 2023
QROMIS, Inc.
Vladimir Odnoblyudov
H01 - BASIC ELECTRIC ELEMENTS