Gallium nitride

Industry

CPC
C30B29/406

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/406Gallium nitride

Industries

Patents Grantslast 30 patents

Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
- Patent number 12,148,612
- Issue date Nov 19, 2024
- Mengyao Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 12,104,279
- Issue date Oct 1, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 12,091,771
- Issue date Sep 17, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. Cardwell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing nitride semiconductor substrate, nitride s...
- Patent number 12,071,707
- Issue date Aug 27, 2024
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a GaN single crystal film on a buffer layer on a...
- Patent number 12,065,755
- Issue date Aug 20, 2024
- Haitao Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing semiconductor element, semiconductor elemen...
- Patent number 12,065,760
- Issue date Aug 20, 2024
- Kyocera Corporation
- Masahiro Araki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a piezoelectric thin film
- Patent number 12,063,023
- Issue date Aug 13, 2024
- WAVELORD CO., LTD.
- Sang Jeong An
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...
- Patent number 12,060,653
- Issue date Aug 13, 2024
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superlattice layer, LED epitaxial structure, display device, and me...
- Patent number 12,057,521
- Issue date Aug 6, 2024
- CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
- Wen Yang Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III element nitride semiconductor substrate
- Patent number 12,057,307
- Issue date Aug 6, 2024
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride substrate
- Patent number 12,049,710
- Issue date Jul 30, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Hydrogen recycle system and hydrogen recycle method
- Patent number 12,024,427
- Issue date Jul 2, 2024
- National University Corporation Tokai National Higher Education and Research...
- Shinji Kambara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Transferring large-area group III-nitride semiconductor material an...
- Patent number 12,020,985
- Issue date Jun 25, 2024
- The Government of the United States of America, as represented by the Secreta...
- Travis J. Anderson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Micro light emitting diode display panel with option of choosing to...
- Patent number 12,015,103
- Issue date Jun 18, 2024
- PlayNitride Display Co., Ltd.
- Yu-Yun Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,009,205
- Issue date Jun 11, 2024
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large area group III nitride crystals and substrates, methods of ma...
- Patent number 12,000,063
- Issue date Jun 4, 2024
- SLT TECHNOLOGIES, INC.
- Drew W. Cardwell
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...
- Patent number 11,987,903
- Issue date May 21, 2024
- Mitsubishi Chemical Corporation
- Kenji Iso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group 13 element nitride wafer with reduced variation in off-cut angle
- Patent number 11,965,268
- Issue date Apr 23, 2024
- IV WORKS CO., LTD.
- Vianney Leroux
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing GaN layered substrate
- Patent number 11,967,530
- Issue date Apr 23, 2024
- Shin-Etsu Chemical Co., Ltd.
- Sumio Sekiyama
- B32 - LAYERED PRODUCTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20250011969
- Publication date Jan 9, 2025
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240401238
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Kentaro NONAKA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20240376636
- Publication date Nov 14, 2024
- Sumitomo Chemical Company, Limited
- Takashi SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240379352
- Publication date Nov 14, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...
- Publication number 20240368804
- Publication date Nov 7, 2024
- Sumitomo Chemical Company, Limited
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240371628
- Publication date Nov 7, 2024
- Shin-Etsu Handotai Co., Ltd.
- Kazunori HAGIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...
- Publication number 20240363343
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu-Jui CHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20240352623
- Publication date Oct 24, 2024
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...
- Publication number 20240344238
- Publication date Oct 17, 2024
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE
- Publication number 20240332021
- Publication date Oct 3, 2024
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen GUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING COATED SUBSTRATES, COATED SUBSTRATE, AND USE T...
- Publication number 20240327309
- Publication date Oct 3, 2024
- Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung e.V.
- Kevin SCHUCK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE...
- Publication number 20240309551
- Publication date Sep 19, 2024
- Panasonic Holdings Corporation
- Junichi TAKINO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GALLIUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AN...
- Publication number 20240300064
- Publication date Sep 12, 2024
- KYOCERA CORPORATION
- Yuri OSUMI
- B24 - GRINDING POLISHING
Information Patent Application
BISMUTH-BASED CO-CATALYST ARRANGEMENT
- Publication number 20240301573
- Publication date Sep 12, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD FOR MANUFACTURING SUBSTRATE OF NITRIDE CRYSTAL...
- Publication number 20240293912
- Publication date Sep 5, 2024
- KYOCERA CORPORATION
- Mari YOSHIMORI HIGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...
- Publication number 20240279844
- Publication date Aug 22, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON...
- Publication number 20240263348
- Publication date Aug 8, 2024
- ROBERT BOSCH GmbH
- Bo CHENG
- C30 - CRYSTAL GROWTH
Information Patent Application
BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DI...
- Publication number 20240258195
- Publication date Aug 1, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Hideaki YAMADA
- B32 - LAYERED PRODUCTS
Information Patent Application
INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...
- Publication number 20240247407
- Publication date Jul 25, 2024
- Applied Materials, Inc.
- Michael Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL NITRIDE FERROELECTRONICS
- Publication number 20240242963
- Publication date Jul 18, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...
- Publication number 20240234141
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Katsuaki MASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HYDROGEN RECYCLE SYSTEM AND HYDROGEN RECYCLE METHOD
- Publication number 20240217811
- Publication date Jul 4, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Shinji Kambara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH PRESSURE SPATIAL CHEMICAL VAPOR DEPOSITION SYSTEM AND RELATED...
- Publication number 20240209502
- Publication date Jun 27, 2024
- LEHIGH UNIVERSITY
- Siddha PIMPUTKAR
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...
- Publication number 20240191395
- Publication date Jun 13, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...
- Publication number 20240191391
- Publication date Jun 13, 2024
- KYOCERA CORPORATION
- Toshihiro KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE
- Publication number 20240183074
- Publication date Jun 6, 2024
- SLT TECHNOLOGIES, INC.
- Wenkan JIANG
- C01 - INORGANIC CHEMISTRY

Gallium nitride

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Preparation method for semiconductor structure

Incorporating semiconductors on a polycrystalline diamond substrate

Growth of A-B crystals without crystal lattice curvature

Crystal growth method and a substrate for a semiconductor device

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Non-polar III-nitride binary and ternary materials, method for obta...

Joined body, laser oscillator, laser amplifier, and joined body man...

Method for producing a nitride layer

Nitride semiconductor template, method for manufacturing nitride se...

Optimized heteroepitaxial growth of semiconductors

Nitride crystal substrate and method for manufacturing the same

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Large area group III nitride crystals and substrates, methods of ma...

Method for manufacturing nitride semiconductor substrate, nitride s...

Method for growing a GaN single crystal film on a buffer layer on a...

Method of manufacturing semiconductor element, semiconductor elemen...

Method of manufacturing a piezoelectric thin film

Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing b...

Superlattice layer, LED epitaxial structure, display device, and me...

Group-III element nitride semiconductor substrate

Group-III nitride substrate

Hydrogen recycle system and hydrogen recycle method

Transferring large-area group III-nitride semiconductor material an...

Micro light emitting diode display panel with option of choosing to...

Engineered substrate structures for power and RF applications

Large area group III nitride crystals and substrates, methods of ma...

N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitri...

Group 13 element nitride wafer with reduced variation in off-cut angle

Method for producing GaN layered substrate

Patents Applicationslast 30 patents

GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

LAMINATE HAVING GROUP 13 ELEMENT NITRIDE SINGLE CRYSTAL SUBSTRATE

GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE, NITRIDE S...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR DEVICE WITH TWO-DIMENSIONAL MATERIALS AND FORMING MET...

GROUP-III NITRIDE SUBSTRATE

GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP...

METHOD FOR STRIPPING GALLIUM NITRIDE SUBSTRATE

METHOD FOR PRODUCING COATED SUBSTRATES, COATED SUBSTRATE, AND USE T...

MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE...

METHOD OF MANUFACTURING GALLIUM NITRIDE SINGLE-CRYSTAL SUBSTRATE AN...

BISMUTH-BASED CO-CATALYST ARRANGEMENT

MANUFACTURING METHOD FOR MANUFACTURING SUBSTRATE OF NITRIDE CRYSTAL...

n-TYPE GaN CRYSTAL, GaN WAFER, AND GaN CRYSTAL, GaN WAFER AND NITRI...

DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON...

BONDED BODY COMPRISING MOSAIC DIAMOND WAFER AND SEMICONDUCTOR OF DI...

INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM...

EPITAXIAL NITRIDE FERROELECTRONICS

SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, APPARAT...

HYDROGEN RECYCLE SYSTEM AND HYDROGEN RECYCLE METHOD

HIGH PRESSURE SPATIAL CHEMICAL VAPOR DEPOSITION SYSTEM AND RELATED...

GALLIUM NITRIDE CRYSTAL, GALLIUM NITRIDE SUBSTRATE, AND METHOD FOR...

SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APP...

OXYGEN-DOPED GROUP III METAL NITRIDE AND METHOD OF MANUFACTURE