Gallium phosphide

Industry

CPC
C30B29/44

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/44Gallium phosphide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing large EMI shielded GaAs and GaP infrared windows
- Patent number 12,084,791
- Issue date Sep 10, 2024
- BAE Systems Information and Electronic Systems Integration Inc.
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,795,575
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,795,574
- Issue date Oct 24, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,788,202
- Issue date Oct 17, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,116
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,761,115
- Issue date Sep 19, 2023
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 11,603,603
- Issue date Mar 14, 2023
- United States of Americas as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered group III-V compound and nanosheet containing phosphorus, a...
- Patent number 11,597,651
- Issue date Mar 7, 2023
- Industry-Academic Cooperation Foundation, Yonsei University
- Woo-young Shim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,535,951
- Issue date Dec 27, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized Heteropitaxial growth of semiconductors
- Patent number 11,434,583
- Issue date Sep 6, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized thick heteroepitaxial growth of semiconductors with in-si...
- Patent number 11,390,963
- Issue date Jul 19, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized Heteroepitaxial growth of semiconductors
- Patent number 11,384,448
- Issue date Jul 12, 2022
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite nitride-based film structure and method for manufacturing...
- Patent number 11,280,027
- Issue date Mar 22, 2022
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Takahide Hirasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for carrying out phosphide in-situ injection synthesis by ca...
- Patent number 10,648,100
- Issue date May 12, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Niefeng Sun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating InGaP epitaxial layer by metal organic chemi...
- Patent number 10,304,678
- Issue date May 28, 2019
- Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan,...
- Wen-Hsiang Huang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Continuous system for fabricating multilayer heterostructures via h...
- Patent number 10,190,234
- Issue date Jan 29, 2019
- Wisconsin Alumni Research Foundation
- Thomas Francis Kuech
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heteroepitaxial growth of orientation-patterned materials on orient...
- Patent number 9,777,402
- Issue date Oct 3, 2017
- The United States of America as represented by the Secretary of the Air Force
- Vladimir L. Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Direct band gap wurtzite semiconductor nanowires
- Patent number 9,493,890
- Issue date Nov 15, 2016
- Technische Universiteit Eindhoven
- Simone Assali
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for producing semiconductor crystal, and semic...
- Patent number 9,187,843
- Issue date Nov 17, 2015
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication of low-loss, light-waveguiding, orientation-patterned s...
- Patent number 9,096,948
- Issue date Aug 4, 2015
- Wisconsin Alumni Research Foundation
- Dan Botez
- G02 - OPTICS
Information Patent Grant
Method for manufacturing light emitting device and light emitting d...
- Patent number 8,629,468
- Issue date Jan 14, 2014
- Kabushiki Kaisha Toshiba
- Kenji Isomoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing compound semiconductor substrate, compound...
- Patent number 8,003,421
- Issue date Aug 23, 2011
- Shin-Etsu Handotai Co., Ltd.
- Yukari Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nanostructures formed of branched nanowhiskers and methods of produ...
- Patent number 7,875,536
- Issue date Jan 25, 2011
- QuNano AB
- Lars Ivar Samuelson
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanostructures formed of branched nanowhiskers and methods of produ...
- Patent number 7,662,706
- Issue date Feb 16, 2010
- QuNano AB
- Lars Ivar Samuelson
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Crystal-growing furnace, in particular a vertical Bridgman crystal-...
- Patent number 7,261,774
- Issue date Aug 28, 2007
- Crystal Growing System GmbH
- Andreas Mühe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Rational directional solidification crystal growth system and method
- Patent number 6,645,294
- Issue date Nov 11, 2003
- NATIONAL TAIWAN UNIVERSITY
- Chung-Wen Lan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth process for large area GaAs with controllable resist...
- Patent number 6,287,381
- Issue date Sep 11, 2001
- Raytheon Company
- Paul Klocek
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optical window
- Patent number 6,287,478
- Issue date Sep 11, 2001
- Raytheon Company
- Paul Klocek
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOS...
- Publication number 20240352624
- Publication date Oct 24, 2024
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Niefeng SUN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183065
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
- Publication number 20240184015
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS
- Publication number 20240183075
- Publication date Jun 6, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Peter G. Schunemann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230045019
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230038745
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042736
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230042689
- Publication date Feb 9, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20230033788
- Publication date Feb 2, 2023
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- G02 - OPTICS
Information Patent Application
Optimized Heteroepitaxial Growth of Semiconductors
- Publication number 20220267925
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...
- Publication number 20220267927
- Publication date Aug 25, 2022
- Government of the United States, as represented by the Secretary of the Air F...
- Shivashankar R. Vangala
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYERED GROUP III-V COMPOUND AND NANOSHEET CONTAINING PHOSPHORUS, A...
- Publication number 20220073351
- Publication date Mar 10, 2022
- Industry-Academic Cooperation Foundation, Yonsei University
- Woo-young SHIM
- B82 - NANO-TECHNOLOGY
Information Patent Application
COMPOSITE NITRIDE-BASED FILM STRUCTURE AND METHOD FOR MANUFACTURING...
- Publication number 20200255977
- Publication date Aug 13, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- TAKAHIDE HIRASAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTO...
- Publication number 20200243709
- Publication date Jul 30, 2020
- OSRAM OLED GmbH
- Xue WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR CARRYING OUT PHOSPHIDE IN-SITU INJECTION SYNTHESIS BY CA...
- Publication number 20200157704
- Publication date May 21, 2020
- THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION
- Niefeng SUN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR FABRICATING INGAP EPITAXIAL LAYER BY METAL ORGANIC CHEMI...
- Publication number 20190164753
- Publication date May 30, 2019
- Institute of Nuclear Energy Research, Atomic Energy Council, Executive Yuan,...
- Wen-Hsiang Huang
- C30 - CRYSTAL GROWTH
Information Patent Application
Heteroepitaxial Growth of Orientation-Patterned Materials on Orient...
- Publication number 20170183793
- Publication date Jun 29, 2017
- Government of the United States, as represented by the Secretary of the Air F...
- Vladimir L. Tassev
- C30 - CRYSTAL GROWTH
Information Patent Application
CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE
- Publication number 20160053404
- Publication date Feb 25, 2016
- BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD.
- Morris YOUNG
- C30 - CRYSTAL GROWTH
Information Patent Application
Direct band gap wurtzite semiconductor nanowires
- Publication number 20140230720
- Publication date Aug 21, 2014
- Simone Assali
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Stress Reduced Manufacturing Semiconductor Devices
- Publication number 20140141592
- Publication date May 22, 2014
- INFINEON TECHNOLOGIES AG
- Peter Irsigler
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED S...
- Publication number 20140037258
- Publication date Feb 6, 2014
- Dan Botez
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMIC...
- Publication number 20120112135
- Publication date May 10, 2012
- Sumitomo Electric Industries, Ltd.
- Takashi Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SUBSTRATE, COMPOUND...
- Publication number 20100276709
- Publication date Nov 4, 2010
- SHIN-ETSU HANDOTAI, CO. LTD.
- Yukari Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Application
BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRAT...
- Publication number 20100263707
- Publication date Oct 21, 2010
- Dan Daeweon Cheong
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING D...
- Publication number 20100237366
- Publication date Sep 23, 2010
- Kabushiki Kaisha Toshiba
- Kenji Isomoto
- C30 - CRYSTAL GROWTH
Information Patent Application
NANOSTRUCTURES FORMED OF BRANCHED NANOWHISKERS AND METHODS OF PRODU...
- Publication number 20100151661
- Publication date Jun 17, 2010
- QuNano AB
- Lars Ivar Samuelson
- C30 - CRYSTAL GROWTH
Information Patent Application
Nanostructures formed of branched nanowhiskers and methods of produ...
- Publication number 20060057360
- Publication date Mar 16, 2006
- Lars Ivar Samuelson
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal-growing furnace, in particular a vertical Bridgman crystal-...
- Publication number 20040079276
- Publication date Apr 29, 2004
- Andreas Muhe
- C30 - CRYSTAL GROWTH
Information Patent Application
Rational directional solidification crystal growth system and method
- Publication number 20030079675
- Publication date May 1, 2003
- Chung-Wen Lan
- C30 - CRYSTAL GROWTH

Gallium phosphide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Method of producing large EMI shielded GaAs and GaP infrared windows

Optimized heteroepitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Optimized heteroepitaxial growth of semiconductors

Layered group III-V compound and nanosheet containing phosphorus, a...

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteropitaxial growth of semiconductors

Optimized thick heteroepitaxial growth of semiconductors with in-si...

Optimized Heteroepitaxial growth of semiconductors

Composite nitride-based film structure and method for manufacturing...

Method for carrying out phosphide in-situ injection synthesis by ca...

Method for fabricating InGaP epitaxial layer by metal organic chemi...

Continuous system for fabricating multilayer heterostructures via h...

Heteroepitaxial growth of orientation-patterned materials on orient...

Direct band gap wurtzite semiconductor nanowires

Method and apparatus for producing semiconductor crystal, and semic...

Fabrication of low-loss, light-waveguiding, orientation-patterned s...

Method for manufacturing light emitting device and light emitting d...

Method for manufacturing compound semiconductor substrate, compound...

Nanostructures formed of branched nanowhiskers and methods of produ...

Nanostructures formed of branched nanowhiskers and methods of produ...

Crystal-growing furnace, in particular a vertical Bridgman crystal-...

Rational directional solidification crystal growth system and method

Crystal growth process for large area GaAs with controllable resist...

Optical window

Patents Applicationslast 30 patents

APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOS...

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

Optimized Heteroepitaxial Growth of Semiconductors

QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENC...

LAYERED GROUP III-V COMPOUND AND NANOSHEET CONTAINING PHOSPHORUS, A...

COMPOSITE NITRIDE-BASED FILM STRUCTURE AND METHOD FOR MANUFACTURING...

METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTO...

METHOD FOR CARRYING OUT PHOSPHIDE IN-SITU INJECTION SYNTHESIS BY CA...

METHOD FOR FABRICATING INGAP EPITAXIAL LAYER BY METAL ORGANIC CHEMI...

Heteroepitaxial Growth of Orientation-Patterned Materials on Orient...

CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE

Direct band gap wurtzite semiconductor nanowires

Method for Stress Reduced Manufacturing Semiconductor Devices

FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED S...

METHOD AND APPARATUS FOR PRODUCING SEMICONDUCTOR CRYSTAL, AND SEMIC...

METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SUBSTRATE, COMPOUND...

BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRAT...

METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING D...

NANOSTRUCTURES FORMED OF BRANCHED NANOWHISKERS AND METHODS OF PRODU...

Nanostructures formed of branched nanowhiskers and methods of produ...

Crystal-growing furnace, in particular a vertical Bridgman crystal-...

Rational directional solidification crystal growth system and method