Claims
- 1. A method of forming a compound semiconductor material, comprising the steps of:(a) providing a vessel having a bottom; (b) placing a flexible compliant carbon cloth containing substantially no contaminants adverse to the formation of said compound semiconductor material on said bottom of said vessel; (c) forming said compound semiconductor material in crystalline form in said vessel and on said cloth; and (d) removing said compound semiconductor material in crystalline form from said vessel and from said cloth.
- 2. The method of claim 1 wherein said cloth is graphite.
- 3. The method of claim 1 wherein said cloth has a thickness of about 20 mils.
- 4. The method of claim 2 wherein said cloth has a thickness of about 20 mils.
- 5. A method of making Si and Ge crystals comprising the steps of:(a) providing a vessel having inner walls and containing one of molten Si and Ge and water thereover, said water containing boron oxide; and (b) cooling the molten Si or Ge to crystalline form progressively first in a predominantly horizontal direction from the bottom center of said vessel to the inner walls of said vessel and then predominantly vertically from the bottom toward the top of said vessel to form said crystal.
- 6. The conductive crystalline material doped with a shallow donor in an amount of from about 5×1015 atoms/cc to about 2×1016 atoms/cc and having a resistivity in up to about 0.1 ohm-cm and an electron mobility greater than 3000 cm2/volt-second.
- 7. The material of claim 6 taken from the class consisting of group II-VI and group III-V compounds, Ge and Si.
- 8. The material of claim 6 taken from the class consisting of GaAs and GaP.
Parent Case Info
This is a divisional of application Ser. No. 07/748,602 filed Aug. 22, 1991 now abandoned.
US Referenced Citations (10)
Foreign Referenced Citations (3)
Number |
Date |
Country |
61-256993 |
Nov 1986 |
JP |
63-123892 |
May 1988 |
JP |
4160090 |
Jun 1992 |
JP |