Gas flow control

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CPC
Y10S148/057

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/057Gas flow control

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Patents Grantslast 30 patents

Information Patent Grant
Compound semiconductor crystal growing method
- Patent number 5,296,088
- Issue date Mar 22, 1994
- Fujitsu Limited
- Kunihiko Kodama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor growth process
- Patent number 5,180,684
- Issue date Jan 19, 1993
- Fujitsu Limited
- Hiroshi Fujioka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a p-type compound semiconductor thin film c...
- Patent number 5,168,077
- Issue date Dec 1, 1992
- Kabushiki Kaisha Toshiba
- Yasuo Ashizawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
MOCVD method and apparatus
- Patent number 5,106,453
- Issue date Apr 21, 1992
- AT&T Bell Laboratories
- John W. Benko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for selectively depositing single elemental semiconductor ma...
- Patent number 5,037,775
- Issue date Aug 6, 1991
- MCNC
- Arnold Reisman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for the epitaxial production of semiconductor stock material
- Patent number 4,916,089
- Issue date Apr 10, 1990
- Stichting Katholieke Universiteit
- Jaap Van Suchtelen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for low temperature growth of silicon epitaxial layers using...
- Patent number 4,910,163
- Issue date Mar 20, 1990
- University of Connecticut
- Faquir C. Jain
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for making a thin film transistor using a concentric inlet f...
- Patent number 4,885,258
- Issue date Dec 5, 1989
- Canon Kabushiki Kaisha
- Shunichi Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for epitaxial growth of compound semiconductor using MOCVD w...
- Patent number 4,859,625
- Issue date Aug 22, 1989
- Research Development Corporation of Japan, Junichi Nishizawa and Oki Electric...
- Fumio Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth method and apparatus therefor
- Patent number 4,848,273
- Issue date Jul 18, 1989
- Nippon Telegraph & Telephone Corporation
- Hidefumi Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for vacuum chemical epitaxy
- Patent number 4,829,021
- Issue date May 9, 1989
- Daido Sanso K. K.
- Lewis M. Fraas
- C30 - CRYSTAL GROWTH
Information Patent Grant
Selective OMCVD growth of compound semiconductor materials on silic...
- Patent number 4,826,784
- Issue date May 2, 1989
- Kopin Corporation
- Jack P. Salerno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for halide VPE of III-V compound semiconductors
- Patent number 4,808,551
- Issue date Feb 28, 1989
- Nippon Telegraph & Telephone Corporation
- Hidefumi Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor-phase epitaxy of indium phosphide and other compounds using f...
- Patent number 4,801,557
- Issue date Jan 31, 1989
- Northwestern University
- Bruce W. Wessels
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing Si or Ge epitaxial film using fluorine oxidant
- Patent number 4,800,173
- Issue date Jan 24, 1989
- Canon Kabushiki Kaisha
- Masahiro Kanai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a semiconductor device by vapor phase depos...
- Patent number 4,748,135
- Issue date May 31, 1988
- U.S. Philips Corp.
- Peter M. Frijlink
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase growth on semiconductor wafers
- Patent number 4,745,088
- Issue date May 17, 1988
- Hitachi, Ltd.
- Yosuke Inoue
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a lateral bipolar transistor in a groove
- Patent number 4,704,786
- Issue date Nov 10, 1987
- Westinghouse Electric Corp.
- Francis J. Kub
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of epitaxial layers by vapor deposition utilizing dynami...
- Patent number 4,190,470
- Issue date Feb 26, 1980
- M/A-COM, Inc.
- Robert E. Walline
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor deposition of single crystal gallium nitride
- Patent number 4,144,116
- Issue date Mar 13, 1979
- U.S. Philips Corporation
- Guy M. Jacob
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming deposits from reactive gases
- Patent number 4,132,818
- Issue date Jan 2, 1979
- International Business Machines Corporation
- Ronald E. Chappelow
- C30 - CRYSTAL GROWTH
Information Patent Grant
Producing high efficiency gallium arsenide IMPATT diodes utilizing...
- Patent number 4,106,959
- Issue date Aug 15, 1978
- Bell Telephone Laboratories, Incorporated
- James Vincent DiLorenzo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping inpurities
- Patent number 4,100,310
- Issue date Jul 11, 1978
- Hitachi, Ltd.
- Mitsuru Ura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Metalorganic chemical vapor deposition of IVA-IVA compounds and com...
- Patent number 4,066,481
- Issue date Jan 3, 1978
- Rockwell International Corporation
- Harold M. Manasevit
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x...
- Patent number 4,007,074
- Issue date Feb 8, 1977
- Hitachi, Ltd.
- Masahiko Ogirima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High efficiency gallium arsenide impatt diodes
- Patent number 3,986,192
- Issue date Oct 12, 1976
- Bell Telephone Laboratories, Incorporated
- James Vincent DiLorenzo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depositing doped material on a substrate
- Patent number 3,979,235
- Issue date Sep 7, 1976
- U.S. Philips Corporation
- Andre Boucher
- C30 - CRYSTAL GROWTH
Information Patent Grant
Accurate control during vapor phase epitaxy
- Patent number 3,930,908
- Issue date Jan 6, 1976
- RCA Corporation
- Stuart Talbot Jolly
- C30 - CRYSTAL GROWTH
Information Patent Grant
3924024
- Patent number 3,924,024
- Issue date Dec 2, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3904449
- Patent number 3,904,449
- Issue date Sep 9, 1975
- H01 - BASIC ELECTRIC ELEMENTS

Gas flow control

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Compound semiconductor crystal growing method

Semiconductor growth process

Method of manufacturing a p-type compound semiconductor thin film c...

MOCVD method and apparatus

Method for selectively depositing single elemental semiconductor ma...

Process for the epitaxial production of semiconductor stock material

Method for low temperature growth of silicon epitaxial layers using...

Method for making a thin film transistor using a concentric inlet f...

Method for epitaxial growth of compound semiconductor using MOCVD w...

Epitaxial growth method and apparatus therefor

Process for vacuum chemical epitaxy

Selective OMCVD growth of compound semiconductor materials on silic...

Method for halide VPE of III-V compound semiconductors

Vapor-phase epitaxy of indium phosphide and other compounds using f...

Process for preparing Si or Ge epitaxial film using fluorine oxidant

Method of manufacturing a semiconductor device by vapor phase depos...

Vapor phase growth on semiconductor wafers

Method of forming a lateral bipolar transistor in a groove

Production of epitaxial layers by vapor deposition utilizing dynami...

Vapor deposition of single crystal gallium nitride

Method of forming deposits from reactive gases

Producing high efficiency gallium arsenide IMPATT diodes utilizing...

Method of doping inpurities

Metalorganic chemical vapor deposition of IVA-IVA compounds and com...

Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x...

High efficiency gallium arsenide impatt diodes

Depositing doped material on a substrate

Accurate control during vapor phase epitaxy

3924024

3904449

Patents Applicationslast 30 patents