Gate programmed

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H01L27/11233

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/11233Gate programmed

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Stacked nanosheet rom
- Patent number 11,315,938
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
FDSOI with on-chip physically unclonable function
- Patent number 10,957,586
- Issue date Mar 23, 2021
- International Business Machines Corporation
- Qing Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
OTPROM for post-process programming using selective breakdown
- Patent number 10,147,496
- Issue date Dec 4, 2018
- GLOBALFOUNDRIES Inc.
- Akhilesh Gautam
- G11 - INFORMATION STORAGE
Information Patent Grant
FDSOI with on-chip physically unclonable function
- Patent number 10,026,648
- Issue date Jul 17, 2018
- International Business Machines Corporation
- Qing Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
OTPROM for post-process programming using selective breakdown
- Patent number 9,916,903
- Issue date Mar 13, 2018
- GLOBALFOUNDRIES Inc.
- Akhilesh Gautam
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable memory with a twin gate structure
- Patent number 9,659,944
- Issue date May 23, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Qintao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing MROM memory based on OTP memory
- Patent number 9,397,106
- Issue date Jul 19, 2016
- CSMC Technologies Fabi Co., Ltd.
- Shuming Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
ROM arrays having memory cell transistors programmed using metal gates
- Patent number 9,276,004
- Issue date Mar 1, 2016
- Broadcom Corporation
- Wei Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
On current in one-time-programmable memory cells
- Patent number 8,679,929
- Issue date Mar 25, 2014
- Texas Instruments Incorporated
- Shanjen “Robert” Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current in one-time-programmable memory cells
- Patent number 8,664,706
- Issue date Mar 4, 2014
- Texas Instruments Incorporated
- Shanjen “Robert” Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanotube-on-gate FET structures and applications
- Patent number 7,911,831
- Issue date Mar 22, 2011
- Nantero, Inc.
- Thomas Rueckes
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contactless mask programmable ROM
- Patent number 7,227,232
- Issue date Jun 5, 2007
- Solid State System Co., Ltd.
- Jhyy-Cheng Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming programmable logic arrays using vertical gate tr...
- Patent number 7,164,294
- Issue date Jan 16, 2007
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact mask programmable ROM
- Patent number 7,015,553
- Issue date Mar 21, 2006
- Solid State System Co., Ltd.
- Jhyy-Cheng Liou
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing non-volatile read only memory
- Patent number 6,955,966
- Issue date Oct 18, 2005
- Oki Electric Industry Co., Ltd.
- Noboru Egawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of modulating threshold voltage of a mask ROM
- Patent number 6,856,533
- Issue date Feb 15, 2005
- Macronix International Co., Ltd.
- Kuang-Wen Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read-only MOS memory
- Patent number 6,798,680
- Issue date Sep 28, 2004
- STMicroelectronics S.A.
- Sigrid Thomas
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming programmable logic arrays using vertical gate tr...
- Patent number 6,794,246
- Issue date Sep 21, 2004
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing non-volatile read only memory
- Patent number 6,780,710
- Issue date Aug 24, 2004
- Oki Electric Industry Co., Ltd.
- Noboru Egawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure having an interconnect and method of produc...
- Patent number 6,724,055
- Issue date Apr 20, 2004
- Infineon Technologies AG
- Gerd Lichter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile read only memory and its manufacturing method
- Patent number 6,487,119
- Issue date Nov 26, 2002
- Oki Electric Industry Co., Ltd.
- Noboru Egawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical gate transistors in pass transistor programmable logic arrays
- Patent number 6,437,389
- Issue date Aug 20, 2002
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable work function transistor high density mask ROM
- Patent number 6,417,548
- Issue date Jul 9, 2002
- United Microelectronics Corp.
- Shing-Ren Sheu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional, deep-trench, high-density read-only memory (ROM)...
- Patent number 6,211,014
- Issue date Apr 3, 2001
- United Microelectronics Corp.
- Chen-Chung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a multi-level mask ROM
- Patent number 6,180,463
- Issue date Jan 30, 2001
- NEC Corporation
- Kazutaka Otsuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional, deep-trench, high-density read-only memory (ROM)...
- Patent number 6,018,186
- Issue date Jan 25, 2000
- United Microelectronics Corp.
- Chen-Chung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a multi-level ROM device
- Patent number 5,786,253
- Issue date Jul 28, 1998
- United Microelectronics Corporation
- Chen-Chung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating multi-level read-only memory device
- Patent number 5,668,029
- Issue date Sep 16, 1997
- United Microelectronics Corporation
- Heng-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating read-only memory cells
- Patent number 5,633,187
- Issue date May 27, 1997
- United Microelectronics Corporation
- Chen-Chung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a metal programmable MOS read only memory device
- Patent number 4,384,399
- Issue date May 24, 1983
- Texas Instruments Incorporated
- Chang-Kiang Kuo
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
FDSOI WITH ON-CHIP PHYSICALLY UNCLONABLE FUNCTION
- Publication number 20180261504
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Qing Cao
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NOVEL OTPROM FOR POST-PROCESS PROGRAMMING USING SELECTIVE BREAKDOWN
- Publication number 20180151238
- Publication date May 31, 2018
- GLOBALFOUNDRIES INC.
- Akhilesh Gautam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One Time Programmable Memory with a Twin Gate Structure
- Publication number 20170005103
- Publication date Jan 5, 2017
- BROADCOM CORPORATION
- Qintao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
ROM Arrays Having Memory Cell Transistors Programmed Using Metal Gates
- Publication number 20130256804
- Publication date Oct 3, 2013
- BROADCOM CORPORATION
- Wei Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT IN ONE-TIME-PROGRAMMABLE MEMORY CELLS
- Publication number 20130143376
- Publication date Jun 6, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen "Robert" Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
On Current in One-Time-Programmable Memory Cells
- Publication number 20130143375
- Publication date Jun 6, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Shanjen "Robert" Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOTUBE-ON-GATE FET STRUCTURES AND APPLICATIONS
- Publication number 20100283528
- Publication date Nov 11, 2010
- Nantero, Inc.
- Thomas RUECKES
- G11 - INFORMATION STORAGE
Information Patent Application
Contactless mask programmable rom
- Publication number 20050127454
- Publication date Jun 16, 2005
- Jhyy-Cheng Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming programmable logic arrays using vertical gate tr...
- Publication number 20050029545
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing non-volatile read only memory
- Publication number 20040259301
- Publication date Dec 23, 2004
- Noboru Egawa
- G11 - INFORMATION STORAGE
Information Patent Application
Contactless mask progammable rom
- Publication number 20040241926
- Publication date Dec 2, 2004
- Jhyy-Cheng Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compact mask programmable rom
- Publication number 20040217379
- Publication date Nov 4, 2004
- Jhyy-Cheng Liou
- G11 - INFORMATION STORAGE
Information Patent Application
Method of modulating threshold voltage of a mask ROM
- Publication number 20040208040
- Publication date Oct 21, 2004
- MACRONIX INTERNATIONAL CO., LTD
- Kuang-Wen Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mask read only memory device and fabrication method thereof
- Publication number 20030205770
- Publication date Nov 6, 2003
- Yao-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile read only memory and its manufacturing method
- Publication number 20020197797
- Publication date Dec 26, 2002
- Noboru Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Read-only MOS memory
- Publication number 20020191432
- Publication date Dec 19, 2002
- STMicroelectronics S.A.
- Sigrid Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical gate transistors in pass transistor programmable logic arrays
- Publication number 20020164853
- Publication date Nov 7, 2002
- Micron Technology, Inc.
- Leonard Forbes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure having an interconnect and method of produc...
- Publication number 20020066932
- Publication date Jun 6, 2002
- Gerd Lichter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile read only memory and its manufacturing method
- Publication number 20020060927
- Publication date May 23, 2002
- Noboru Egawa
- H01 - BASIC ELECTRIC ELEMENTS

Gate programmed

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Stacked nanosheet rom

FDSOI with on-chip physically unclonable function

OTPROM for post-process programming using selective breakdown

FDSOI with on-chip physically unclonable function

OTPROM for post-process programming using selective breakdown

One time programmable memory with a twin gate structure

Method for producing MROM memory based on OTP memory

ROM arrays having memory cell transistors programmed using metal gates

On current in one-time-programmable memory cells

Current in one-time-programmable memory cells

Nanotube-on-gate FET structures and applications

Contactless mask programmable ROM

Method for forming programmable logic arrays using vertical gate tr...

Compact mask programmable ROM

Method of manufacturing non-volatile read only memory

Method of modulating threshold voltage of a mask ROM

Read-only MOS memory

Method for forming programmable logic arrays using vertical gate tr...

Method of manufacturing non-volatile read only memory

Semiconductor structure having an interconnect and method of produc...

Non-volatile read only memory and its manufacturing method

Vertical gate transistors in pass transistor programmable logic arrays

Variable work function transistor high density mask ROM

Three-dimensional, deep-trench, high-density read-only memory (ROM)...

Method for fabricating a multi-level mask ROM

Three-dimensional, deep-trench, high-density read-only memory (ROM)...

Method of making a multi-level ROM device

Process for fabricating multi-level read-only memory device

Process for fabricating read-only memory cells

Method of making a metal programmable MOS read only memory device

Patents Applicationslast 30 patents

FDSOI WITH ON-CHIP PHYSICALLY UNCLONABLE FUNCTION

NOVEL OTPROM FOR POST-PROCESS PROGRAMMING USING SELECTIVE BREAKDOWN

One Time Programmable Memory with a Twin Gate Structure

ROM Arrays Having Memory Cell Transistors Programmed Using Metal Gates

CURRENT IN ONE-TIME-PROGRAMMABLE MEMORY CELLS

On Current in One-Time-Programmable Memory Cells

NANOTUBE-ON-GATE FET STRUCTURES AND APPLICATIONS

Contactless mask programmable rom

Method for forming programmable logic arrays using vertical gate tr...

Method of manufacturing non-volatile read only memory

Contactless mask progammable rom

Compact mask programmable rom

Method of modulating threshold voltage of a mask ROM

Mask read only memory device and fabrication method thereof

Non-volatile read only memory and its manufacturing method

Read-only MOS memory

Vertical gate transistors in pass transistor programmable logic arrays

Semiconductor structure having an interconnect and method of produc...

Non-volatile read only memory and its manufacturing method