Gate region of field-effect devices with PN junction gate

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H01L29/1066

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/1066Gate region of field-effect devices with PN junction gate

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride-based transistor device
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- Issue date Dec 10, 2024
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- Issue date Nov 19, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS
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Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
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Information Patent Grant
HEMT devices with reduced size and high alignment tolerance
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- Issue date Aug 20, 2024
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Information Patent Grant
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Information Patent Grant
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Manufacturable thin film gallium and nitrogen containing devices
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Information Patent Grant
Process of forming an electronic device including a doped gate elec...
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- Taiwan Semiconductor Manufacturing Co., Ltd
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof employing an...
- Patent number 11,888,052
- Issue date Jan 30, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Qian Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,881,443
- Issue date Jan 23, 2024
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- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-less AlGaN GaN trigate transistor
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- Issue date Jan 9, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Kon Hoo Teo
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Information Patent Grant
Low voltage/power junction FET with all-around junction gate
- Patent number 11,869,983
- Issue date Jan 9, 2024
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- Alexander Reznicek
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Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 11,862,719
- Issue date Jan 2, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
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Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,855,237
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
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Information Patent Grant
Silicon carbide junction field effect transistors
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- Issue date Nov 21, 2023
- Power Integrations, Inc.
- Kuo-Chang Robert Yang
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Information Patent Grant
Method of forming a high electron mobility transistor
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- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
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Information Patent Grant
Nitride semiconductor device and nitride semiconductor package
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- Issue date Sep 26, 2023
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- Taketoshi Tanaka
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Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,735,501
- Issue date Aug 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
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Information Patent Grant
Integrated circuit devices with an engineered substrate
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- Issue date Aug 22, 2023
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- Vladimir Odnoblyudov
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Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
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Information Patent Grant
Drain current sensing and fault protection circuit based on gate vo...
- Patent number 11,705,720
- Issue date Jul 18, 2023
- University of Tennessee Research Foundation
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,699,751
- Issue date Jul 11, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
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HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE
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- H01 - BASIC ELECTRIC ELEMENTS
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Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240387766
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- H01 - BASIC ELECTRIC ELEMENTS
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3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...
- Publication number 20240379502
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- ROHM CO., LTD.
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SELECTIVE GATE OVERDRIVE OF TRANSISTOR
- Publication number 20240297230
- Publication date Sep 5, 2024
- GAN SYSTEMS INC.
- Seyedarmin MIREMAD
- H01 - BASIC ELECTRIC ELEMENTS
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DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20240275379
- Publication date Aug 15, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
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ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...
- Publication number 20240266430
- Publication date Aug 8, 2024
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
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- Publication date Jul 11, 2024
- DB HITEK CO., LTD.
- Hong Sik SHIN
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HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCT...
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- UNITED MICROELECTRONICS CORP.
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FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
- Publication number 20240162299
- Publication date May 16, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
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- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
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- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
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LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE
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- Publication date Mar 14, 2024
- Analog Devices International Unlimited Company
- Edward John Coyne
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VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
- Publication number 20240079503
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- Infineon Technologies Austria AG
- Hans Weber
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3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
- Publication number 20240047539
- Publication date Feb 8, 2024
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- Ming HE
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NITRIDE SEMICONDUCTOR DEVICE
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- Norikazu ITO
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- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
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NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240030330
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chuan HE
- H01 - BASIC ELECTRIC ELEMENTS
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NITRIDE SEMICONDUCTOR DEVICE
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- Publication date Jan 18, 2024
- ROHM CO., LTD.
- Isamu NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
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P-TYPE GATE HEMT DEVICE
- Publication number 20230411504
- Publication date Dec 21, 2023
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Mengyuan HUA
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NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
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- Qingyuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352599
- Publication date Nov 2, 2023
- Mitsubishi Electric Corporation
- Hisashi SAITO
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3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
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- Publication date Oct 26, 2023
- Monolithic 3D Inc.
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Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230253296
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- H01 - BASIC ELECTRIC ELEMENTS
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3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
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- H01 - BASIC ELECTRIC ELEMENTS

Gate region of field-effect devices with PN junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Group III nitride-based transistor device

Semiconductor device and method for manufacturing the same

Germanium-based sensor with junction-gate field effect transistor a...

Bidirectional switch module and bidirectional switch

Nitride semiconductor device

3D semiconductor device and structure with metal layers and a conne...

Nitride-based semiconductor device and method for manufacturing the...

HEMT devices with reduced size and high alignment tolerance

Enhancement-mode N-channel and P-channel GaN device integration str...

Semiconductor device

Double gate transistor device and method of operating

Semiconductor structures and manufacturing methods thereof

Manufacturable thin film gallium and nitrogen containing devices

Process of forming an electronic device including a doped gate elec...

Semiconductor device

Semiconductor device and manufacturing method thereof employing an...

3D semiconductor device and structure with metal layers and a conne...

Etch-less AlGaN GaN trigate transistor

Low voltage/power junction FET with all-around junction gate

Group III-nitride high-electron mobility transistors with buried p-...

Germanium-based sensor with junction-gate field effect transistor a...

Semiconductor device with a passivation layer and method for produc...

Silicon carbide junction field effect transistors

Method of forming a high electron mobility transistor

Nitride semiconductor device and nitride semiconductor package

3D semiconductor device and structure with metal layers and a conne...

Integrated circuit devices with an engineered substrate

Charge-induced threshold voltage tuning in III-N transistors

Drain current sensing and fault protection circuit based on gate vo...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SELECTIVE GATE OVERDRIVE OF TRANSISTOR

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...

SEMICONDUCTOR DEVICE

HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCT...

FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE SEMICONDUCTOR DEVICE

P-TYPE GATE HEMT DEVICE

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...