Gate region of field-effect devices with PN junction gate

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H01L29/1066

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1066Gate region of field-effect devices with PN junction gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
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Information Patent Grant
Semiconductor device and manufacturing method thereof employing an...
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- Issue date Jan 30, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
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- Issue date Jan 23, 2024
- Monolithic 3D Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-less AlGaN GaN trigate transistor
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- Issue date Jan 9, 2024
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Group III-nitride high-electron mobility transistors with buried p-...
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
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- Infineon Technologies AG
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Information Patent Grant
Silicon carbide junction field effect transistors
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- Power Integrations, Inc.
- Kuo-Chang Robert Yang
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Method of forming a high electron mobility transistor
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- Chun-Wei Hsu
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Nitride semiconductor device and nitride semiconductor package
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- Issue date Sep 26, 2023
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- Taketoshi Tanaka
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Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
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- Issue date Aug 22, 2023
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- Zvi Or-Bach
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Information Patent Grant
Integrated circuit devices with an engineered substrate
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- Issue date Aug 22, 2023
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- Vladimir Odnoblyudov
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Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
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- Issue date Aug 1, 2023
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- Nidhi Nidhi
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Information Patent Grant
Drain current sensing and fault protection circuit based on gate vo...
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- Issue date Jul 18, 2023
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- Patent number 11,699,751
- Issue date Jul 11, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
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- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

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- Publication number 20240387766
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SELECTIVE GATE OVERDRIVE OF TRANSISTOR
- Publication number 20240297230
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- GAN SYSTEMS INC.
- Seyedarmin MIREMAD
- H01 - BASIC ELECTRIC ELEMENTS
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DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20240275379
- Publication date Aug 15, 2024
- Infineon Technologies Austria AG
- Markus Bina
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ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...
- Publication number 20240266430
- Publication date Aug 8, 2024
- SOUTHEAST UNIVERSITY
- Long ZHANG
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- UNITED MICROELECTRONICS CORP.
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FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
- Publication number 20240162299
- Publication date May 16, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
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- Analog Devices International Unlimited Company
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VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
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3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
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- Ming HE
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
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Information Patent Application
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- H01 - BASIC ELECTRIC ELEMENTS

Gate region of field-effect devices with PN junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Group III nitride-based transistor device

Semiconductor device and method for manufacturing the same

Germanium-based sensor with junction-gate field effect transistor a...

Bidirectional switch module and bidirectional switch

Nitride semiconductor device

3D semiconductor device and structure with metal layers and a conne...

Nitride-based semiconductor device and method for manufacturing the...

HEMT devices with reduced size and high alignment tolerance

Enhancement-mode N-channel and P-channel GaN device integration str...

Semiconductor device

Double gate transistor device and method of operating

Semiconductor structures and manufacturing methods thereof

Manufacturable thin film gallium and nitrogen containing devices

Process of forming an electronic device including a doped gate elec...

Semiconductor device

Semiconductor device and manufacturing method thereof employing an...

3D semiconductor device and structure with metal layers and a conne...

Etch-less AlGaN GaN trigate transistor

Low voltage/power junction FET with all-around junction gate

Group III-nitride high-electron mobility transistors with buried p-...

Germanium-based sensor with junction-gate field effect transistor a...

Semiconductor device with a passivation layer and method for produc...

Silicon carbide junction field effect transistors

Method of forming a high electron mobility transistor

Nitride semiconductor device and nitride semiconductor package

3D semiconductor device and structure with metal layers and a conne...

Integrated circuit devices with an engineered substrate

Charge-induced threshold voltage tuning in III-N transistors

Drain current sensing and fault protection circuit based on gate vo...

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH THREE LEVELS AND ISOLATI...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SELECTIVE GATE OVERDRIVE OF TRANSISTOR

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

ENHANCEMENT-MODE N-CHANNEL AND P-CHANNEL GAN DEVICE INTEGRATION STR...

SEMICONDUCTOR DEVICE

HIGH-VOLTAGE TRANSISTOR, LEVEL-UP SHIFTING CIRCUIT, AND SEMICONDUCT...

FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE SEMICONDUCTOR DEVICE

P-TYPE GATE HEMT DEVICE

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...