Gate region of field-effect devices with PN junction gate

Industry

CPC
H01L29/1066

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/1066Gate region of field-effect devices with PN junction gate

Industries

Patents Grantslast 30 patents

Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a doped gate elec...
- Patent number 11,942,326
- Issue date Mar 26, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Petr Kostelnik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,901,433
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jheng-Sheng You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof employing an...
- Patent number 11,888,052
- Issue date Jan 30, 2024
- SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS (SINANO), CHINESE ACADEMY OF S...
- Qian Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,881,443
- Issue date Jan 23, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch-less AlGaN GaN trigate transistor
- Patent number 11,869,946
- Issue date Jan 9, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Kon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage/power junction FET with all-around junction gate
- Patent number 11,869,983
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride high-electron mobility transistors with buried p-...
- Patent number 11,862,719
- Issue date Jan 2, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based sensor with junction-gate field effect transistor a...
- Patent number 11,855,237
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a passivation layer and method for produc...
- Patent number 11,854,926
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Jens Peter Konrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide junction field effect transistors
- Patent number 11,824,094
- Issue date Nov 21, 2023
- Power Integrations, Inc.
- Kuo-Chang Robert Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 11,804,538
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and nitride semiconductor package
- Patent number 11,769,825
- Issue date Sep 26, 2023
- Rohm Co., Ltd.
- Taketoshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,735,501
- Issue date Aug 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices with an engineered substrate
- Patent number 11,735,460
- Issue date Aug 22, 2023
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain current sensing and fault protection circuit based on gate vo...
- Patent number 11,705,720
- Issue date Jul 18, 2023
- University of Tennessee Research Foundation
- Fei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,699,751
- Issue date Jul 11, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off HEMT transistor with selective generation of 2DEG chan...
- Patent number 11,699,748
- Issue date Jul 11, 2023
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,694,944
- Issue date Jul 4, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,616,004
- Issue date Mar 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers and a conne...
- Patent number 11,594,473
- Issue date Feb 28, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor on silicon-on-insulator substrate
- Patent number 11,557,662
- Issue date Jan 17, 2023
- Texas Instruments Incorporated
- Zachary Ka Fai Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) having an indium-containin...
- Patent number 11,551,927
- Issue date Jan 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of an HEMT transistor of the normally off type...
- Patent number 11,538,922
- Issue date Dec 27, 2022
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor (HEMT) semiconductor devices with...
- Patent number 11,538,931
- Issue date Dec 27, 2022
- Semiconductor Components Industries, LLC
- Woochul Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall passivation for HEMT devices
- Patent number 11,522,066
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Chin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with metal layers
- Patent number 11,476,181
- Issue date Oct 18, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high power transistor with gate oxide barriers
- Patent number 11,424,355
- Issue date Aug 23, 2022
- Texas Instruments Incorporated
- Nicholas Stephen Dellas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device with vias and isolation layers
- Patent number 11,410,912
- Issue date Aug 9, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20240128165
- Publication date Apr 18, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES
- Publication number 20240120373
- Publication date Apr 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- HONG YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...
- Publication number 20240105829
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...
- Publication number 20240105877
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhy-Jyi Sze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE
- Publication number 20240088229
- Publication date Mar 14, 2024
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...
- Publication number 20240079503
- Publication date Mar 7, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE
- Publication number 20240047539
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240030336
- Publication date Jan 25, 2024
- Rohm Co., Ltd.
- Norikazu ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240030309
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Ronghui HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240030330
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240021717
- Publication date Jan 18, 2024
- ROHM CO., LTD.
- Isamu NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE GATE HEMT DEVICE
- Publication number 20230411504
- Publication date Dec 21, 2023
- SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Mengyuan HUA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230369449
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230352540
- Publication date Nov 2, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230352599
- Publication date Nov 2, 2023
- Mitsubishi Electric Corporation
- Hisashi SAITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230343679
- Publication date Oct 26, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230253296
- Publication date Aug 10, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230197573
- Publication date Jun 22, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS
- Publication number 20230147746
- Publication date May 11, 2023
- Power Integrations, Inc.
- Kuo-Chang Robert YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE
- Publication number 20230131602
- Publication date Apr 27, 2023
- CAMBRIDGE ENTERPRISE LIMITED
- Martin ARNOLD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V SEMICONDUCTOR DEVICE
- Publication number 20230117946
- Publication date Apr 20, 2023
- Cambridge GaN Devices Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR
- Publication number 20230098516
- Publication date Mar 30, 2023
- Monolithic Power Systems, Inc.
- Vipindas PALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230087787
- Publication date Mar 23, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, IN...
- Publication number 20230082881
- Publication date Mar 16, 2023
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CAPS FOR GATE STRUCTURES
- Publication number 20230010065
- Publication date Jan 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hang Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...
- Publication number 20230005821
- Publication date Jan 5, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR ARRANGEMENT WITH A LATERAL SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20220384567
- Publication date Dec 1, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Rolf Weis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS
- Publication number 20220336328
- Publication date Oct 20, 2022
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCH MODULE AND BIDIRECTIONAL SWITCH
- Publication number 20220310835
- Publication date Sep 29, 2022
- Panasonic Intellectual Property Management Co., Ltd.
- Takashi ICHIRYU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE
- Publication number 20220262940
- Publication date Aug 18, 2022
- Semiconductor Components Industries, LLC
- Peter COPPENS
- H01 - BASIC ELECTRIC ELEMENTS

Gate region of field-effect devices with PN junction gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturable thin film gallium and nitrogen containing devices

Process of forming an electronic device including a doped gate elec...

Semiconductor device

Semiconductor device and manufacturing method thereof employing an...

3D semiconductor device and structure with metal layers and a conne...

Etch-less AlGaN GaN trigate transistor

Low voltage/power junction FET with all-around junction gate

Group III-nitride high-electron mobility transistors with buried p-...

Germanium-based sensor with junction-gate field effect transistor a...

Semiconductor device with a passivation layer and method for produc...

Silicon carbide junction field effect transistors

Method of forming a high electron mobility transistor

Nitride semiconductor device and nitride semiconductor package

3D semiconductor device and structure with metal layers and a conne...

Integrated circuit devices with an engineered substrate

Charge-induced threshold voltage tuning in III-N transistors

Drain current sensing and fault protection circuit based on gate vo...

Semiconductor device

Normally-off HEMT transistor with selective generation of 2DEG chan...

3D semiconductor device and structure with metal layers and a conne...

3D semiconductor device and structure with metal layers and a conne...

3D semiconductor device and structure with metal layers and a conne...

Junction field effect transistor on silicon-on-insulator substrate

High electron mobility transistor (HEMT) having an indium-containin...

Manufacturing method of an HEMT transistor of the normally off type...

High-electron-mobility transistor (HEMT) semiconductor devices with...

Sidewall passivation for HEMT devices

3D semiconductor device and structure with metal layers

Method of making a high power transistor with gate oxide barriers

3D semiconductor device with vias and isolation layers

Patents Applicationslast 30 patents

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

ISOLATION STRUCTURES OF SEMICONDUCTOR DEVICES

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

Germanium-Based Sensor with Junction-Gate Field Effect Transistor a...

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE

VERTICAL JUNCTION FIELD EFFECT TRANSISTOR INCLUDING A PLURALITY OF...

3D STACKED FIELD-EFFECT TRANSISTOR DEVICE WITH PN JUNCTION STRUCTURE

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE SEMICONDUCTOR DEVICE

P-TYPE GATE HEMT DEVICE

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS

POWER SEMICONDUCTOR DEVICE WITH AN AUXILIARY GATE STRUCTURE

III-V SEMICONDUCTOR DEVICE

SINGLE SIDED CHANNEL MESA POWER JUNCTION FIELD EFFECT TRANSISTOR

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, IN...

METAL CAPS FOR GATE STRUCTURES

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS AND A CONNE...

TRANSISTOR ARRANGEMENT WITH A LATERAL SUPERJUNCTION TRANSISTOR DEVICE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS

BIDIRECTIONAL SWITCH MODULE AND BIDIRECTIONAL SWITCH

HEMT DEVICES WITH REDUCED SIZE AND HIGH ALIGNMENT TOLERANCE