Gated diode structures

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H01L29/7391

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7391Gated diode structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having gate electrodes on front side and back...
- Patent number 12,159,927
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Yoko Iwakaji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...
- Patent number 12,100,753
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell
- Patent number 12,100,752
- Issue date Sep 24, 2024
- STMicroelectronics France
- Philippe Galy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 12,094,869
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of semiconductor arrangement comprising semiconductor column
- Patent number 12,074,220
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunneling field effect transistor and semiconductor device includin...
- Patent number 11,990,533
- Issue date May 21, 2024
- Korea Advanced Institute of Science and Technology
- MinCheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistor cell
- Patent number 11,990,531
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hay-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type oxide semiconductor and method for manufacturing same
- Patent number 11,916,103
- Issue date Feb 27, 2024
- FLOSFIA INC.
- Shizuo Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,908,858
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Sung Soo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming lateral heterojunctions in two-dimensional mate...
- Patent number 11,894,449
- Issue date Feb 6, 2024
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-controlled diode and chip
- Patent number 11,894,422
- Issue date Feb 6, 2024
- Huawei Technologies Co., Ltd.
- Wei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,894,258
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 11,887,980
- Issue date Jan 30, 2024
- Japan Display Inc.
- Toshinari Sasaki
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Complementary transistor and semiconductor device
- Patent number 11,887,984
- Issue date Jan 30, 2024
- Sony Group Corporation
- Hidetoshi Oishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting devices having lateral heterojunctions in two-dimens...
- Patent number 11,862,716
- Issue date Jan 2, 2024
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional materials integrated with multiferroic layers
- Patent number 11,817,240
- Issue date Nov 14, 2023
- The Government of the United States of America, as represented by the Secreta...
- Berend T. Jonker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,810,914
- Issue date Nov 7, 2023
- Fuji Electric Co., Ltd.
- Tomoyuki Obata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures with one or more raised terminals
- Patent number 11,804,543
- Issue date Oct 31, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical overstress protection with low leakage current for high...
- Patent number 11,784,488
- Issue date Oct 10, 2023
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 11,764,207
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including source/drain employing double-charge dopants
- Patent number 11,757,004
- Issue date Sep 12, 2023
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...
- Patent number 11,757,025
- Issue date Sep 12, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge (ESD) protection circuits using tunneling f...
- Patent number 11,710,961
- Issue date Jul 25, 2023
- STMICROELECTRONICS INTERNATIONAL N.V.
- Radhakrishnan Sithanandam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrate-and-fire neuron circuit using single-gated feedback field...
- Patent number 11,699,721
- Issue date Jul 11, 2023
- Korea University Research and Business Foundation
- Sang Sig Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite transistor with electrodes extending to active regions
- Patent number 11,688,738
- Issue date Jun 27, 2023
- Sony Group Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method of manufacturing the same, and...
- Patent number 11,626,498
- Issue date Apr 11, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin gate tunnel field-effect transistor (FET)
- Patent number 11,557,663
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Karthik Balakrishnan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-finger devices with reduced parasitic capacitance
- Patent number 11,521,967
- Issue date Dec 6, 2022
- STMICROELECTRONICS INTERNATIONAL N.V.
- Vishal Kumar Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling FinFET
- Patent number 11,515,418
- Issue date Nov 29, 2022
- STMicroelectronics, Inc.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge storage and sensing devices and methods
- Patent number 11,502,189
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND TRANSISTOR WITH HYBRID CONDUCTION MECHANISM AND MAN...
- Publication number 20240429229
- Publication date Dec 26, 2024
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL
- Publication number 20240413228
- Publication date Dec 12, 2024
- STMicroelectronics France
- Philippe GALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20240387712
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20240372006
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Field Effect Transistor and Manufacturing Method Thereof,...
- Publication number 20240297243
- Publication date Sep 5, 2024
- BOE TECHNOLOGY GROUP CO., LTD.
- Jiayu HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXCHANGE ELECTRODES FOR NETWORK OF QUANTUM DOTS
- Publication number 20240222474
- Publication date Jul 4, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR ELEMENT, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUC...
- Publication number 20240186404
- Publication date Jun 6, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kimihiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240162078
- Publication date May 16, 2024
- FUJI ELECTRIC CO., LTD.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR
- Publication number 20240128259
- Publication date Apr 18, 2024
- Japan Display Inc.
- Toshinari SASAKI
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240113120
- Publication date Apr 4, 2024
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240113189
- Publication date Apr 4, 2024
- Mitsubishi Electric Corporation
- Koichi NISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240079470
- Publication date Mar 7, 2024
- Peking University
- Jin WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240021607
- Publication date Jan 18, 2024
- Fuji Electric Co., Ltd.
- Tomoyuki OBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...
- Publication number 20230387277
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jenn-Gwo Hwu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230378164
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUITS USING TUNNELING F...
- Publication number 20230318287
- Publication date Oct 5, 2023
- STMicroelectronics International N.V.
- Radhakrishnan Sithanandam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND...
- Publication number 20230110504
- Publication date Apr 13, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230092061
- Publication date Mar 23, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS
- Publication number 20230067948
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE COUPLED FIELD EFFECT RECTIFIER DIODE AND METHOD OF MAKING
- Publication number 20220393022
- Publication date Dec 8, 2022
- STMicroelectronics Pte Ltd
- Shin Phay LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE, TRANSISTOR AND DISPLAY DEVICE
- Publication number 20220375924
- Publication date Nov 24, 2022
- Japan Display Inc.
- Toshinari SASAKI
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
P-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20220352303
- Publication date Nov 3, 2022
- FLOSFIA INC.
- Shizuo FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL OVERSTRESS PROTECTION WITH LOW LEAKAGE CURRENT FOR HIGH...
- Publication number 20220337055
- Publication date Oct 20, 2022
- Analog Devices International Unlimited Company
- Javier A. Salcedo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNELING FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDIN...
- Publication number 20220310828
- Publication date Sep 29, 2022
- Korea Advanced Institute of Science and Technology
- MinCheol Shin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220293775
- Publication date Sep 15, 2022
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
- Publication number 20220271172
- Publication date Aug 25, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220139908
- Publication date May 5, 2022
- Fuji Electric Co., Ltd.
- Tomoyuki OBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGERED DIODE WITH REDUCED CAPACITANCE AND METHOD OF MAKING...
- Publication number 20220037308
- Publication date Feb 3, 2022
- STMicroelectronics International N.V.
- Vishal Kumar SHARMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL
- Publication number 20220037513
- Publication date Feb 3, 2022
- STMicroelectronics S.A.
- Philippe GALY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LACING SYSTEM WITH GUIDE ELEMENTS
- Publication number 20220022602
- Publication date Jan 27, 2022
- NIKE, Inc.
- Tiffany A. Beers
- H01 - BASIC ELECTRIC ELEMENTS

Gated diode structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having gate electrodes on front side and back...

Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...

Memory cell

Diode structures of stacked devices and methods of forming the same

Formation of semiconductor arrangement comprising semiconductor column

Tunneling field effect transistor and semiconductor device includin...

Vertical tunneling field-effect transistor cell

P-type oxide semiconductor and method for manufacturing same

Semiconductor device

Methods for forming lateral heterojunctions in two-dimensional mate...

Gate-controlled diode and chip

Semiconductor device and manufacturing method thereof

Diode

Complementary transistor and semiconductor device

Light-emitting devices having lateral heterojunctions in two-dimens...

Two-dimensional materials integrated with multiferroic layers

Semiconductor device

Diode structures with one or more raised terminals

Electrical overstress protection with low leakage current for high...

Diode structures of stacked devices and methods of forming the same

Transistors including source/drain employing double-charge dopants

Gated metal-insulator-semiconductor (MIS) tunnel diode having negat...

Electrostatic discharge (ESD) protection circuits using tunneling f...

Integrate-and-fire neuron circuit using single-gated feedback field...

Composite transistor with electrodes extending to active regions

Semiconductor memory device, method of manufacturing the same, and...

Twin gate tunnel field-effect transistor (FET)

Multi-finger devices with reduced parasitic capacitance

Vertical tunneling FinFET

Charge storage and sensing devices and methods

Patents Applicationslast 30 patents

GATE-ALL-AROUND TRANSISTOR WITH HYBRID CONDUCTION MECHANISM AND MAN...

MEMORY CELL

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

Tunneling Field Effect Transistor and Manufacturing Method Thereof,...

EXCHANGE ELECTRODES FOR NETWORK OF QUANTUM DOTS

SEMICONDUCTOR ELEMENT, SEMICONDUCTOR INTEGRATED CIRCUIT, AND PRODUC...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRANSISTOR

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

GAN POWER DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

GATED METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL DIODE HAVING NEGAT...

DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME

ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUITS USING TUNNELING F...

SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND...

DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME

DIODE STRUCTURES WITH ONE OR MORE RAISED TERMINALS

CHARGE COUPLED FIELD EFFECT RECTIFIER DIODE AND METHOD OF MAKING

DIODE, TRANSISTOR AND DISPLAY DEVICE

P-TYPE OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME

ELECTRICAL OVERSTRESS PROTECTION WITH LOW LEAKAGE CURRENT FOR HIGH...

TUNNELING FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDIN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF

SEMICONDUCTOR DEVICE

MULTI-FINGERED DIODE WITH REDUCED CAPACITANCE AND METHOD OF MAKING...

MEMORY CELL

LACING SYSTEM WITH GUIDE ELEMENTS