Gp II-VI compounds

Industry

CPC
Y10S148/064

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/064Gp II-VI compounds

Industries

Patents Grantslast 30 patents

Information Patent Grant
Reduction of surface leakage current by surface passivation of CdZn...
- Patent number 6,168,967
- Issue date Jan 2, 2001
- The Regents of the University of California
- Mark A. Hoffbauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method and apparatus
- Patent number 6,139,631
- Issue date Oct 31, 2000
- Stanley Electric Co., Ltd.
- Hiroyuki Kato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Chemical vapor deposition of II/VI semiconductor material using tri...
- Patent number 5,882,805
- Issue date Mar 16, 1999
- The United States of America as represented by the Secretary of the Navy
- Kelvin T. Higa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multi-layer structure for II-VI group compound semiconductor and me...
- Patent number 5,874,349
- Issue date Feb 23, 1999
- NEC Corporation
- Kouichi Naniwae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer structure for II-VI group compound semiconductor on an...
- Patent number 5,834,361
- Issue date Nov 10, 1998
- NEC Corporation
- Kouichi Naniwae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated heterostructure of group II-VI semiconductor materials i...
- Patent number 5,818,072
- Issue date Oct 6, 1998
- North Carolina State University
- Jan Frederick Schetzina
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device
- Patent number 5,619,519
- Issue date Apr 8, 1997
- Sanyo Electric Co. Ltd.
- Hiroki Hamada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Photo-assisted nitrogen doping of II-VI semiconductor compounds dur...
- Patent number 5,547,897
- Issue date Aug 20, 1996
- Philips Electronics North America Corporation
- Nikhil R. Taskar
- C30 - CRYSTAL GROWTH
Information Patent Grant
HGCDTE thin film transistor
- Patent number 5,534,719
- Issue date Jul 9, 1996
- Texas Instruments Incorporated
- Richard A. Schiebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for p-type doping of semiconductor structures formed of g...
- Patent number 5,511,509
- Issue date Apr 30, 1996
- Texas Instruments Incorporated
- Hung-Dah Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for continuous control of composition and doping of pulsed l...
- Patent number 5,499,599
- Issue date Mar 19, 1996
- Martin Marietta Energy Systems, Inc.
- Douglas H. Lowndes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for making OHMIC contacts and photovoltaic cell with ohmic...
- Patent number 5,472,910
- Issue date Dec 5, 1995
- BP Solar Limited
- Daniel R. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing P-type compound semiconductor
- Patent number 5,468,678
- Issue date Nov 21, 1995
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing leakage current in an integrated circuit
- Patent number 5,416,030
- Issue date May 16, 1995
- Texas Instruments Incorporated
- Jerome L. Elkind
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a single crystal layers
- Patent number 5,411,915
- Issue date May 2, 1995
- Sanyo Electric Co., Ltd.
- Hiroki Hamada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making a HgCdTe thin film transistor
- Patent number 5,403,760
- Issue date Apr 4, 1995
- Texas Instruments Incorporated
- Richard A. Schiebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic passivation for epitaxial deposition of ternary chalcogenid...
- Patent number 5,399,206
- Issue date Mar 21, 1995
- Hughes Aircraft Company
- Terence J. de Lyon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing a HgCdTe epitaxial layer on a semiconductor subs...
- Patent number 5,399,503
- Issue date Mar 21, 1995
- Fujitsu Limited
- Tetsuo Saito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for p-type doping of semiconductor structures formed of grou...
- Patent number 5,398,641
- Issue date Mar 21, 1995
- Texas Instruments Incorporated
- Hung-Dah Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for continuous control of composition and doping of pulsed l...
- Patent number 5,386,798
- Issue date Feb 7, 1995
- Martin Marietta Energy Systems, Inc.
- Douglas H. Lowndes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for epitaxially growing a II-VI compound semiconductor
- Patent number 5,372,970
- Issue date Dec 13, 1994
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating epitaxially deposited ohmic contacts using gr...
- Patent number 5,366,927
- Issue date Nov 22, 1994
- North Carolina State University
- Jan F. Schetzina
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of nitrogen doping of II-VI semiconductor compounds during e...
- Patent number 5,354,708
- Issue date Oct 11, 1994
- Nikhil R. Taskar
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing P-type compound semiconductor
- Patent number 5,306,662
- Issue date Apr 26, 1994
- Nichia Chemical Industries, Ltd.
- Shuji Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic passivation for epitaxial deposition of ternary chalcogenid...
- Patent number 5,306,386
- Issue date Apr 26, 1994
- Hughes Aircraft Company
- Terence J. de Lyon
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making thin film transistors
- Patent number 5,306,653
- Issue date Apr 26, 1994
- Goldstar Co., Ltd.
- Chang W. Hur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for doping mercury cadmium telluride MOCVD grown crystall...
- Patent number 5,306,660
- Issue date Apr 26, 1994
- Rockwell International Corporation
- Charles R. Younger
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laser deposition of cubic cadmium sulfide films
- Patent number 5,304,281
- Issue date Apr 19, 1994
- Alfred University
- Xingwu Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated heterostructure of Group II-VI semiconductor materials i...
- Patent number 5,294,833
- Issue date Mar 15, 1994
- North Carolina State University
- Jan F. Schetzina
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film
- Patent number 5,290,394
- Issue date Mar 1, 1994
- NEC Corporation
- Tokuhito Sasaki
- C30 - CRYSTAL GROWTH

Gp II-VI compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Reduction of surface leakage current by surface passivation of CdZn...

Crystal growth method and apparatus

Chemical vapor deposition of II/VI semiconductor material using tri...

Multi-layer structure for II-VI group compound semiconductor and me...

Multi-layer structure for II-VI group compound semiconductor on an...

Integrated heterostructure of group II-VI semiconductor materials i...

Semiconductor laser device

Photo-assisted nitrogen doping of II-VI semiconductor compounds dur...

HGCDTE thin film transistor

Apparatus for p-type doping of semiconductor structures formed of g...

Method for continuous control of composition and doping of pulsed l...

Process for making OHMIC contacts and photovoltaic cell with ohmic...

Method of manufacturing P-type compound semiconductor

Method of reducing leakage current in an integrated circuit

Method of manufacturing a single crystal layers

Method of making a HgCdTe thin film transistor

Arsenic passivation for epitaxial deposition of ternary chalcogenid...

Method for growing a HgCdTe epitaxial layer on a semiconductor subs...

Method for p-type doping of semiconductor structures formed of grou...

Method for continuous control of composition and doping of pulsed l...

Method for epitaxially growing a II-VI compound semiconductor

Method of fabricating epitaxially deposited ohmic contacts using gr...

Method of nitrogen doping of II-VI semiconductor compounds during e...

Method of manufacturing P-type compound semiconductor

Arsenic passivation for epitaxial deposition of ternary chalcogenid...

Method of making thin film transistors

Technique for doping mercury cadmium telluride MOCVD grown crystall...

Laser deposition of cubic cadmium sulfide films

Integrated heterostructure of Group II-VI semiconductor materials i...

Method of manufacturing a thin Hg.sub.1-x Cd.sub.x Te film