Gp III-V generic compounds-processing

Industry

CPC
Y10S148/065

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/065Gp III-V generic compounds-processing

Industries

Patents Grantslast 30 patents

Information Patent Grant
Formation of InGaSa p-n Junction by control of growth temperature
- Patent number 5,858,818
- Issue date Jan 12, 1999
- Electronics and Telecommunications Research Institute
- Jeong-Rae Ro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group III nitride compound semiconductor subst...
- Patent number 5,846,844
- Issue date Dec 8, 1998
- Toyoda Gosei Co., Ltd.
- Isamu Akasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a luminous element of group III nitride semi-...
- Patent number 5,834,326
- Issue date Nov 10, 1998
- Pioneer Electronic Corporation
- Mamoru Miyachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making III-Nitride laser and detection device
- Patent number 5,834,331
- Issue date Nov 10, 1998
- Northwestern University
- Manijeh Razeghi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Capped anneal
- Patent number 5,744,375
- Issue date Apr 28, 1998
- Texas Instruments Incorporated
- Yung-Chung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped anneal
- Patent number 5,659,188
- Issue date Aug 19, 1997
- Texas Instruments Incorporated
- Yung-Chung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capped anneal
- Patent number 5,391,515
- Issue date Feb 21, 1995
- Texas Instruments Incorporated
- Yung-Chung Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride based semiconductor device...
- Patent number 5,389,571
- Issue date Feb 14, 1995
- Amano; Hiroshi
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for producing indium-containing semiconduct...
- Patent number 5,346,852
- Issue date Sep 13, 1994
- The United States of America as represented by the Secretary of the Navy
- Robert W. Gedridge
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method of III - V compound semiconductor
- Patent number 5,294,565
- Issue date Mar 15, 1994
- NEC Corporation
- Yasushi Shiraishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an heteroepitaxial semiconductor structure
- Patent number 5,272,105
- Issue date Dec 21, 1993
- GTE Laboratories Incorporated
- Ben G. Yacobi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating InP single crystals, semiconductor devices having s...
- Patent number 5,254,507
- Issue date Oct 19, 1993
- Nippon Mining Co., Ltd
- Haruhito Shimakura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride base semiconductor device
- Patent number 5,239,188
- Issue date Aug 24, 1993
- Amano; Hiroshi
- Tetsuya Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing compound semiconductors and apparatus therefor
- Patent number 5,229,319
- Issue date Jul 20, 1993
- Kabushiki Kaisha Toshiba
- Yoshito Kawakyu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a III-V semiconductor device using a self-b...
- Patent number 5,223,458
- Issue date Jun 29, 1993
- Raytheon Company
- Stanley R. Shanfield
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a uniform oxide layer on a compound semicondu...
- Patent number 5,214,003
- Issue date May 25, 1993
- Nippon Mining Co., Ltd
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making staggered complementary heterostructure FET
- Patent number 5,192,698
- Issue date Mar 9, 1993
- The United State of America as represented by the Secretary of the Air Force
- Fritz L. Schuermeyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated light guide detector structure made...
- Patent number 5,190,883
- Issue date Mar 2, 1993
- France Telecom-Establissement autonome de droit Public (Centre National d'Et
- Louis Menigaux
- G02 - OPTICS
Information Patent Grant
Method of making P-type compound semiconductor employing trimethylg...
- Patent number 5,173,445
- Issue date Dec 22, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Koji Ando
- C30 - CRYSTAL GROWTH
Information Patent Grant
Selective growth of InP in device fabrication
- Patent number 5,153,147
- Issue date Oct 6, 1992
- AT&T Bell Laboratories
- Robert F. Karlicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing GaAs single crystal substrate using three stage...
- Patent number 5,137,847
- Issue date Aug 11, 1992
- Nippon Mining Co., Ltd.
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amino replacements for arsine, antimony and phosphine
- Patent number 5,124,278
- Issue date Jun 23, 1992
- Air Products and Chemicals, Inc.
- David A. Bohling
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of making indium arsenide magnetoresistor
- Patent number 5,117,543
- Issue date Jun 2, 1992
- General Motors Corporation
- Joseph P. Heremans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature synthesis of group III-group V semiconductors
- Patent number 5,084,128
- Issue date Jan 28, 1992
- E. I. Du Pont de Nemours and Company
- Ralph T. Baker
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlGaN compound semiconductor material
- Patent number 5,076,860
- Issue date Dec 31, 1991
- Kabushiki Kaisha Toshiba
- Yasuo Ohba
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Vapor-phase epitaxial growth method
- Patent number 5,064,778
- Issue date Nov 12, 1991
- Sumitomo Chemical Co., Ltd.
- Takayoshi Maeda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for mirror passivation of semiconductor laser diodes
- Patent number 5,063,173
- Issue date Nov 5, 1991
- International Business Machines Corporation
- Marcel Gasser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming functional deposited films by means of microwave...
- Patent number 5,061,511
- Issue date Oct 29, 1991
- Canon Kabushiki Kaisha
- Keishi Saitoh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing compound semiconductor single crystal substrates
- Patent number 5,047,370
- Issue date Sep 10, 1991
- Nippon Mining Co., Ltd
- Hiromasa Yamamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the epitaxial growth of a semiconductor structure
- Patent number 5,037,776
- Issue date Aug 6, 1991
- International Business Machines Corporation
- Yvan Galeuchet
- B82 - NANO-TECHNOLOGY

Gp III-V generic compounds-processing

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Formation of InGaSa p-n Junction by control of growth temperature

Method for producing group III nitride compound semiconductor subst...

Process for producing a luminous element of group III nitride semi-...

Method for making III-Nitride laser and detection device

Capped anneal

Capped anneal

Capped anneal

Method of fabricating a gallium nitride based semiconductor device...

Low temperature process for producing indium-containing semiconduct...

Crystal growth method of III - V compound semiconductor

Method of manufacturing an heteroepitaxial semiconductor structure

Semi-insulating InP single crystals, semiconductor devices having s...

Gallium nitride base semiconductor device

Method for producing compound semiconductors and apparatus therefor

Method of manufacturing a III-V semiconductor device using a self-b...

Process for producing a uniform oxide layer on a compound semicondu...

Making staggered complementary heterostructure FET

Method for making an integrated light guide detector structure made...

Method of making P-type compound semiconductor employing trimethylg...

Selective growth of InP in device fabrication

Method of producing GaAs single crystal substrate using three stage...

Amino replacements for arsine, antimony and phosphine

Method of making indium arsenide magnetoresistor

Low-temperature synthesis of group III-group V semiconductors

AlGaN compound semiconductor material

Vapor-phase epitaxial growth method

Method for mirror passivation of semiconductor laser diodes

Method for forming functional deposited films by means of microwave...

Method for producing compound semiconductor single crystal substrates

Method for the epitaxial growth of a semiconductor structure