having a built-in localised breakdown/breakover region

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H01L29/7424

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7424having a built-in localised breakdown/breakover region

Industries

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Patents Grantslast 30 patents

Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 12,057,443
- Issue date Aug 6, 2024
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruggedized symmetrically bidirectional bipolar power transistor
- Patent number 11,978,788
- Issue date May 7, 2024
- Ideal Power Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch stop layer for injecting carriers into drift layer for a verti...
- Patent number 11,916,138
- Issue date Feb 27, 2024
- Pakal Technologies, Inc.
- Paul M Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruggedized symmetrically bidirectional bipolar power transistor
- Patent number 11,699,746
- Issue date Jul 11, 2023
- Ideal Power Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating it
- Patent number 11,664,445
- Issue date May 30, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario Schenk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit semiconductor component and method for operating same
- Patent number 11,646,365
- Issue date May 9, 2023
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Uwe Kellner-Werdehausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 11,302,688
- Issue date Apr 12, 2022
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surge transient voltage suppressor
- Patent number 11,152,351
- Issue date Oct 19, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate turn-off device with designated breakdown areas betw...
- Patent number 11,114,552
- Issue date Sep 7, 2021
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination region comprising a...
- Patent number 11,094,779
- Issue date Aug 17, 2021
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruggedized symmetrically bidirectional bipolar power transistor
- Patent number 11,069,797
- Issue date Jul 20, 2021
- Ideal Power Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 11,049,852
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surge transient voltage suppressor
- Patent number 10,720,422
- Issue date Jul 21, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-controlled rectifier structure and manufacturing method the...
- Patent number 10,700,186
- Issue date Jun 30, 2020
- Tianzhi Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection structure, method for manufactur...
- Patent number 10,672,758
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Vadim Valentinovic Vendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unidirectional ESD protection with buried breakdown thyristor device
- Patent number 10,629,715
- Issue date Apr 21, 2020
- NXP USA, INC.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET SCR with SCR implant under anode and cathode junctions
- Patent number 10,535,762
- Issue date Jan 14, 2020
- INDIAN INSTITUTE OF SCIENCE
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Turn-off power semiconductor device with improved centering and fix...
- Patent number 10,249,747
- Issue date Apr 2, 2019
- ABB Schweiz AG
- Hendrik Ravener
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High surge transient voltage suppressor
- Patent number 10,211,199
- Issue date Feb 19, 2019
- Alpha and Omega Semiconductor (Cayman) LTD
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a semiconductor device with integrated transi...
- Patent number 10,186,509
- Issue date Jan 22, 2019
- General Electric Company
- Avinash Srikrishnan Kashyap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection circuit with isolated SCR for negative voltage opera...
- Patent number 10,083,951
- Issue date Sep 25, 2018
- Texas Instruments Incorporated
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power component
- Patent number 10,068,999
- Issue date Sep 4, 2018
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppression devices with symmetric breakdown char...
- Patent number 10,014,388
- Issue date Jul 3, 2018
- General Electric Company
- Victor Mario Torres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD protection structure and method of fabrication thereof
- Patent number 9,960,251
- Issue date May 1, 2018
- NXP USA, INC.
- Jean Philippe Laine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppressor (TVS) with reduced breakdown voltage
- Patent number 9,911,728
- Issue date Mar 6, 2018
- Alpha and Omega Semiconductor Incorporated
- Ning Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional MOS device and method for preparing the same
- Patent number 9,905,682
- Issue date Feb 27, 2018
- University of Electronic Science and Technology of China
- Jinping Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional punch-through semiconductor device and manufacturing...
- Patent number 9,837,516
- Issue date Dec 5, 2017
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Fei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional punch-through semiconductor device and manufacturing...
- Patent number 9,679,998
- Issue date Jun 13, 2017
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Fei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with improved avalanche capability
- Patent number 9,601,605
- Issue date Mar 21, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppressor (TVS) with reduced breakdown voltage
- Patent number 9,583,586
- Issue date Feb 28, 2017
- Alpha and Omega Semiconductor Incorporated
- Ning Shi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240063265
- Publication date Feb 22, 2024
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Markus Droldner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGEDIZED SYMMETRICALLY BIDIRECTIONAL BIPOLAR POWER TRANSISTOR
- Publication number 20230299188
- Publication date Sep 21, 2023
- IDEAL POWER INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...
- Publication number 20220344498
- Publication date Oct 27, 2022
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC PROTECTION ELEMENT
- Publication number 20220278230
- Publication date Sep 1, 2022
- KABUSHIKI KAISHA TOKAI-RIKA-DENKI-SEISAKUSHO
- Kengo SHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20220189946
- Publication date Jun 16, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME
- Publication number 20210367067
- Publication date Nov 25, 2021
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Uwe KELLNER-WERDEHAUSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUGGEDIZED SYMMETRICALLY BIDIRECTIONAL BIPOLAR POWER TRANSISTOR
- Publication number 20210313461
- Publication date Oct 7, 2021
- IDEAL POWER INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING IT
- Publication number 20210036136
- Publication date Feb 4, 2021
- INFINEON TECHNOLOGIES BIPOLAR GMBH & CO. KG
- Mario SCHENK
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...
- Publication number 20200312988
- Publication date Oct 1, 2020
- Pakal Technologies, Inc.
- Paul M. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR
- Publication number 20200303370
- Publication date Sep 24, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THE...
- Publication number 20200058781
- Publication date Feb 20, 2020
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Tianzhi ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIDIRECTIONAL ESD PROTECTION WITH BURIED BREAKDOWN THYRISTOR DEVICE
- Publication number 20200013885
- Publication date Jan 9, 2020
- NXP USA, Inc.
- Evgueniy Nikolov Stefanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Electronic Arrangement
- Publication number 20190386093
- Publication date Dec 19, 2019
- Frank Dieter Pfirsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR
- Publication number 20190157257
- Publication date May 23, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20180350794
- Publication date Dec 6, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20180350795
- Publication date Dec 6, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR
- Publication number 20180286853
- Publication date Oct 4, 2018
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Shekar Mallikarjunaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS
- Publication number 20180248025
- Publication date Aug 30, 2018
- Indian Institute of Science
- Mayank Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ruggedized Symmetrically Bidirectional Bipolar Power Transistor
- Publication number 20180130898
- Publication date May 10, 2018
- IDEAL POWER, INC.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic Discharge Protection Structure, Method for Manufactur...
- Publication number 20180108648
- Publication date Apr 19, 2018
- INFINEON TECHNOLOGIES AG
- Vadim Valentinovic Vendt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Therefor
- Publication number 20170317165
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-DIRECTIONAL PUNCH-THROUGH SEMICONDUCTOR DEVICE AND MANUFACTURING...
- Publication number 20170243965
- Publication date Aug 24, 2017
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Fei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL MOS DEVICE AND METHOD FOR PREPARING THE SAME
- Publication number 20170084728
- Publication date Mar 23, 2017
- University of Electronic Science and Technology of China
- Jinping ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TURN-OFF POWER SEMICONDUCTOR DEVICE WITH IMPROVED CENTERING AND FIX...
- Publication number 20170033208
- Publication date Feb 2, 2017
- ABB Schweiz AG
- Hendrik Ravener
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-DIRECTIONAL PUNCH-THROUGH SEMICONDUCTOR DEVICE AND MANUFACTURING...
- Publication number 20160300939
- Publication date Oct 13, 2016
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Fei Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION STRUCTURE AND METHOD OF FABRICATION THEREOF
- Publication number 20160276460
- Publication date Sep 22, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Jean Philippe LAINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER COMPONENT
- Publication number 20160247904
- Publication date Aug 25, 2016
- STMicroelectronics (Tours) SAS
- Samuel Menard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY...
- Publication number 20150318346
- Publication date Nov 5, 2015
- Xingbi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...
- Publication number 20150294967
- Publication date Oct 15, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Akram A. Salman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Robust ESD Protection with Silicon-Controlled Rectifier
- Publication number 20150228770
- Publication date Aug 13, 2015
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Chun-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS

having a built-in localised breakdown/breakover region

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

ESD protection circuit with isolated SCR for negative voltage opera...

Ruggedized symmetrically bidirectional bipolar power transistor

Etch stop layer for injecting carriers into drift layer for a verti...

Ruggedized symmetrically bidirectional bipolar power transistor

Short-circuit semiconductor component and method for operating it

Short-circuit semiconductor component and method for operating same

ESD protection circuit with isolated SCR for negative voltage opera...

High surge transient voltage suppressor

Insulated gate turn-off device with designated breakdown areas betw...

Semiconductor device having an edge termination region comprising a...

Ruggedized symmetrically bidirectional bipolar power transistor

ESD protection circuit with isolated SCR for negative voltage opera...

High surge transient voltage suppressor

Silicon-controlled rectifier structure and manufacturing method the...

Electrostatic discharge protection structure, method for manufactur...

Unidirectional ESD protection with buried breakdown thyristor device

FinFET SCR with SCR implant under anode and cathode junctions

Turn-off power semiconductor device with improved centering and fix...

High surge transient voltage suppressor

Method and system for a semiconductor device with integrated transi...

ESD protection circuit with isolated SCR for negative voltage opera...

Vertical power component

Transient voltage suppression devices with symmetric breakdown char...

ESD protection structure and method of fabrication thereof

Transient voltage suppressor (TVS) with reduced breakdown voltage

Bidirectional MOS device and method for preparing the same

Bi-directional punch-through semiconductor device and manufacturing...

Bi-directional punch-through semiconductor device and manufacturing...

Bipolar junction transistor with improved avalanche capability

Transient voltage suppressor (TVS) with reduced breakdown voltage

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

RUGGEDIZED SYMMETRICALLY BIDIRECTIONAL BIPOLAR POWER TRANSISTOR

ETCH STOP LAYER FOR INJECTING CARRIERS INTO DRIFT LAYER FOR A VERTI...

ELECTROSTATIC PROTECTION ELEMENT

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING SAME

RUGGEDIZED SYMMETRICALLY BIDIRECTIONAL BIPOLAR POWER TRANSISTOR

SHORT-CIRCUIT SEMICONDUCTOR COMPONENT AND METHOD FOR OPERATING IT

INSULATED GATE TURN-OFF DEVICE WITH DESIGNATED BREAKDOWN AREAS BETW...

HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR

SILICON-CONTROLLED RECTIFIER STRUCTURE AND MANUFACTURING METHOD THE...

UNIDIRECTIONAL ESD PROTECTION WITH BURIED BREAKDOWN THYRISTOR DEVICE

Power Electronic Arrangement

HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

HIGH SURGE TRANSIENT VOLTAGE SUPPRESSOR

FINFET SCR WITH SCR IMPLANT UNDER ANODE AND CATHODE JUNCTIONS

Ruggedized Symmetrically Bidirectional Bipolar Power Transistor

Electrostatic Discharge Protection Structure, Method for Manufactur...

Semiconductor Device and Manufacturing Therefor

BI-DIRECTIONAL PUNCH-THROUGH SEMICONDUCTOR DEVICE AND MANUFACTURING...

BIDIRECTIONAL MOS DEVICE AND METHOD FOR PREPARING THE SAME

TURN-OFF POWER SEMICONDUCTOR DEVICE WITH IMPROVED CENTERING AND FIX...

BI-DIRECTIONAL PUNCH-THROUGH SEMICONDUCTOR DEVICE AND MANUFACTURING...

ESD PROTECTION STRUCTURE AND METHOD OF FABRICATION THEREOF

VERTICAL POWER COMPONENT

SEMICONDUCTOR DEVICE WITH VOLTAGE-SUSTAINING REGION CONSTRUCTED BY...

ESD PROTECTION CIRCUIT WITH ISOLATED SCR FOR NEGATIVE VOLTAGE OPERA...

Robust ESD Protection with Silicon-Controlled Rectifier