having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

CPC
H01L29/785

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of forming contact metal
- Patent number 12,211,747
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming FinFET devices with a fin top hardmask
- Patent number 12,211,921
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,211,836
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch selectivity control for epitaxy process window enlargement in...
- Patent number 12,211,927
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor device with air gap spacer in source/drain...
- Patent number 12,211,937
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ching-Feng Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor and method for forming same
- Patent number 12,211,939
- Issue date Jan 28, 2025
- Robert Bosch GmbH
- Jens Baringhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure of semiconductor device and method of manufacture
- Patent number 12,211,701
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsan-Chun Wang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive rail structure for semiconductor devices
- Patent number 12,211,790
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Bo Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of fin-type field effect transistor structure
- Patent number 12,211,843
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including standard cells
- Patent number 12,211,851
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Pen Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanisms for forming FinFET device
- Patent number 12,211,750
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,211,924
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor device with low-dimensional material an...
- Patent number 12,211,931
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Tse Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fins for metal oxide semiconductor device structures
- Patent number 12,205,955
- Issue date Jan 21, 2025
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having source/drain regions including a plurality of...
- Patent number 12,205,988
- Issue date Jan 21, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Kazuyuki Tomida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around device and method of forming the same
- Patent number 12,206,004
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for forming metal gate electrodes for transistors
- Patent number 12,205,819
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Huan-Chieh Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having a subtrate with...
- Patent number 12,207,460
- Issue date Jan 21, 2025
- Renesas Electronics Corporation
- Tomohiro Yamashita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20250040180
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM
- Publication number 20250040196
- Publication date Jan 30, 2025
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040227
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming layout pattern of static random access memory
- Publication number 20250040228
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040198
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Cheng-Pu Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...
- Publication number 20250040177
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...
- Publication number 20250029892
- Publication date Jan 23, 2025
- Intel Corporation
- Conor P. PULS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION
- Publication number 20250031380
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Li Chiang
- G11 - INFORMATION STORAGE
Information Patent Application
BARRIER LAYERS IN SEMICONDUCTOR DEVICES
- Publication number 20250031399
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mu-Min Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20250031404
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Hsuan LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT OPTIMIZATION
- Publication number 20250031426
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Heng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...
- Publication number 20250031403
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wei-Hao Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...
- Publication number 20250022878
- Publication date Jan 16, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250022958
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-You TAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS LINERS IN SEMICONDUCTOR DEVICES
- Publication number 20250022956
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Cheng LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE FOR MOL RELIABILITY EVALUATION
- Publication number 20250022759
- Publication date Jan 16, 2025
- International Business Machines Corporation
- HUIMEI ZHOU
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250022941
- Publication date Jan 16, 2025
- Samsung Electronics Co., LTD
- Beomjin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20250022959
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sung Uk JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE-TYPE MEMORY WITH FIN FIELD-EFFECT TRANSISTOR
- Publication number 20250024668
- Publication date Jan 16, 2025
- EMEMORY TECHNOLOGY INC.
- Yi-Hung LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL STORAGE GATE FINFET FOR NON-VOLATILE MEMORY
- Publication number 20250017001
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Chao Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING
- Publication number 20250015166
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES
- Publication number 20250015187
- Publication date Jan 9, 2025
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20250015080
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Szu-Wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR
- Publication number 20250015127
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tien Yu Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
- Publication number 20250014947
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kenichi Sano
- H01 - BASIC ELECTRIC ELEMENTS

having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming contact metal

Hybrid channel semiconductor device and method

Gate-all-around transistor with strained channels

Method for forming FinFET devices with a fin top hardmask

FinFET device and method of forming same

Semiconductor device and manufacturing method thereof

Semiconductor device having a doped fin well

Etch selectivity control for epitaxy process window enlargement in...

Field effect transistor device with air gap spacer in source/drain...

Vertical field-effect transistor and method for forming same

IC including standard cells and SRAM cells

Gate structure of semiconductor device and method of manufacture

FinFET device and method of forming same

Conductive rail structure for semiconductor devices

Method for manufacturing FinFETs by fin-recessing processes to form...

Strained-channel fin FETs

Manufacturing method of fin-type field effect transistor structure

Semiconductor device including standard cells

Method of manufacturing a semiconductor device and a semiconductor...

Gate air spacer for fin-like field effect transistor

Mechanisms for forming FinFET device

Semiconductor device and method of forming the same

Fin field-effect transistor device with low-dimensional material an...

High-voltage semiconductor device structures

Fins for metal oxide semiconductor device structures

Planar buried channel structure integrated with non-planar structures

FinFET device having source/drain regions including a plurality of...

Gate all around device and method of forming the same

Method and device for forming metal gate electrodes for transistors

Method of manufacturing semiconductor device having a subtrate with...

Patents Applicationslast 30 patents

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Method for forming layout pattern of static random access memory

SEMICONDUCTOR DEVICE

Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...

INTEGRATED CIRCUIT STRUCTURES HAVING THROUGH-STACK THERMAL SINK FOR...

3T MEMORY WITH ENHANCED SPEED OF OPERATION AND DATA RETENTION

BARRIER LAYERS IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

GATE HEIGHT OPTIMIZATION

CONTACT PLUG STRUCTURES OF SEMICONDUCTOR DEVICE AND METHODS OF FORM...

ISOLATION BETWEEN DEVICE AREAS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

USE OF A PLACEHOLDER FOR BACKSIDE CONTACT FORMATION FOR TRANSISTOR...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

STRESS LINERS IN SEMICONDUCTOR DEVICES

TEST STRUCTURE FOR MOL RELIABILITY EVALUATION

SEMICONDUCTOR DEVICES

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

ANTIFUSE-TYPE MEMORY WITH FIN FIELD-EFFECT TRANSISTOR

NOVEL STORAGE GATE FINFET FOR NON-VOLATILE MEMORY

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

TRANSISTOR STRUCTURE WITH MULTIPLE VERTICAL THIN BODIES

FIN-TYPE FIELD EFFECT TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION