having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

CPC
H01L29/785

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/785having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industries

Patents Grantslast 30 patents

Information Patent Grant
Nanoribbon thick gate devices with differential ribbon spacing and...
- Patent number 12,249,622
- Issue date Mar 11, 2025
- Intel Corporation
- Tanuj Trivedi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 12,249,649
- Issue date Mar 11, 2025
- United Microelectronics Corp.
- Cheng-Han Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,249,651
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Hyuncheol Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic diffusion profile engineering for transistors
- Patent number 12,249,626
- Issue date Mar 11, 2025
- Applied Materials, Inc.
- Patricia M. Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,249,606
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor, integrated circuit, and manufacturing method of transistor
- Patent number 12,249,656
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Marcus Johannes Henricus Van Dal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and methods of forming the same
- Patent number 12,249,650
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having a gate with a tapering bottom portion and a ga...
- Patent number 12,243,748
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial layers for transistors
- Patent number 12,243,931
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with L-shape conductive feature and methods of...
- Patent number 12,243,781
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacutring Co., Ltd.
- Cheng-Chi Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon phosphide semiconductor device
- Patent number 12,243,784
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gates and method of forming
- Patent number 12,243,925
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hsin-Yi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal oxidation for gate all around nanosheet I/O device
- Patent number 12,243,941
- Issue date Mar 4, 2025
- Applied Materials, Inc.
- Myungsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having three-dimensional transistors and seal ri...
- Patent number 12,243,873
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Yang Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a static random-access memory (SRAM) cell with fi...
- Patent number 12,243,874
- Issue date Mar 4, 2025
- Samsung Electronics Co., Ltd.
- Kyungin Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different height cell subregions, semiconductor device having the s...
- Patent number 12,243,914
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Chan Yang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Gate structure with non-linear profile for transistors
- Patent number 12,243,924
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih Ping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method
- Patent number 12,237,372
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor arrangements with stacked trench contacts and gate straps
- Patent number 12,237,388
- Issue date Feb 25, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,210
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Chae Ho Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...
- Patent number 12,238,914
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin structure
- Patent number 12,237,322
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Shun-Li Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 12,237,383
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Dohee Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-metal gate first gate replacement process for multigate devices
- Patent number 12,237,396
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jia-Ni Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacturing thereof
- Patent number 12,237,405
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 12,237,380
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,237,227
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kai-Qiang Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial directional etch method and resulting structures
- Patent number 12,237,397
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072015
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE STRUCTURE WITH EXTRA FIN
- Publication number 20250072038
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20250072040
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE
- Publication number 20250072008
- Publication date Feb 27, 2025
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20250072028
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-TE CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20250072037
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES
- Publication number 20250072041
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Sungmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE
- Publication number 20250072054
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...
- Publication number 20250072039
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hong Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Nano-Pillar Transistor Structures for 3-D ICS
- Publication number 20250063780
- Publication date Feb 20, 2025
- MURATA MANUFACTURING CO., LTD.
- Sinan Goktepeli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250063799
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Ju Hun PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250063812
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shun-Jang LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...
- Publication number 20250063793
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- NUO XU
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE
- Publication number 20250063805
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20250063749
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Lun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE STRUCTURE
- Publication number 20250063759
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NAND String Utilizing Floating Body Memory Cell
- Publication number 20250063718
- Publication date Feb 20, 2025
- Zeno Semiconductor, Inc.
- Benjamin S. Louie
- G11 - INFORMATION STORAGE
Information Patent Application
CONDUCTIVE STRUCTURES AND METHODS OF FORMATION
- Publication number 20250063758
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Wei CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250063776
- Publication date Feb 20, 2025
- UNITED MICROELECTRONICS CORP.
- Hsin-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20250063757
- Publication date Feb 20, 2025
- Sony Semiconductor Solutions Corporation
- RYOHEI TAKAYANAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE
- Publication number 20250056897
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Duckseoung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20250056859
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Jia-He Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK
- Publication number 20250056860
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jung-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...
- Publication number 20250056895
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Jui CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES, AND RELATED MEMORY DEVICES
- Publication number 20250056822
- Publication date Feb 13, 2025
- Lodestar Licensing Group LLC
- Toru Tanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS
- Publication number 20250056831
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Shyue Seng TAN
- H01 - BASIC ELECTRIC ELEMENTS

having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Nanoribbon thick gate devices with differential ribbon spacing and...

Semiconductor device

Semiconductor device

Arsenic diffusion profile engineering for transistors

Integrated circuit device

Transistor, integrated circuit, and manufacturing method of transistor

FinFET device and methods of forming the same

FinFET device having a gate with a tapering bottom portion and a ga...

Source/drain epitaxial layers for transistors

Semiconductor device with L-shape conductive feature and methods of...

Silicon phosphide semiconductor device

Transistor gates and method of forming

Conformal oxidation for gate all around nanosheet I/O device

Integrated circuit having three-dimensional transistors and seal ri...

Method of forming a static random-access memory (SRAM) cell with fi...

Different height cell subregions, semiconductor device having the s...

Gate structure with non-linear profile for transistors

Field effect transistor and method

Transistor arrangements with stacked trench contacts and gate straps

Semiconductor device

Heterostructure oxide semiconductor vertical gate-all-around (VGAA)...

Semiconductor device having fin structure

Integrated circuit device

P-metal gate first gate replacement process for multigate devices

Semiconductor devices and methods of manufacturing thereof

Minimizing shorting between FinFET epitaxial regions

Semiconductor device and method of forming the same

Semiconductor device and method

Methods for increasing germanium concentration of surfaces of a sil...

Partial directional etch method and resulting structures

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

FINFET DEVICE STRUCTURE WITH EXTRA FIN

SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

METHOD OF FORMING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...

INTEGRATED CIRCUIT DEVICES

SEMICONDUCTOR DEVICE WITH DIELECTRIC STRUCTURE

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

FILTER FINS IN A GATE CONNECTOR REGION BETWEEN TRANSISTORS FOR SIGN...

Vertical Nano-Pillar Transistor Structures for 3-D ICS

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ASSOCIATED MEMORY...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHOD OF FORMING GATE STRUCTURE

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

NAND String Utilizing Floating Body Memory Cell

CONDUCTIVE STRUCTURES AND METHODS OF FORMATION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

INTEGRATED CIRCUIT DEVICE INCLUDING A DIODE

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE STRUCTURE WITH METAL GATE STACK

INTEGRATED CIRCUIT DEVICE, INTEGRATED CIRCUIT LAYOUT AND SYSTEM FOR...

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

INTEGRATED CIRCUIT DEVICES, AND RELATED MEMORY DEVICES

ASYMMETRIC JUNCTIONLESS FIN FIELD EFFECT TRANSISTORS