Heating of the deposition chamber, the substrate or the material to be evaporated

Industry

CPC
C30B23/06

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/06Heating of the deposition chamber, the substrate or the material to be evaporated

Industries

Patents Grantslast 30 patents

Information Patent Grant
Epi-growth apparatus of separate chamber type
- Patent number 12,000,061
- Issue date Jun 4, 2024
- T.O.S Co., Ltd.
- Bum Ho Choi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of silicon carbide wafer and semiconductor str...
- Patent number 11,987,902
- Issue date May 21, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transparent conductive oxide thin film and use thereof
- Patent number 11,982,017
- Issue date May 14, 2024
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sc...
- Ruyi Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Superconductor-semiconductor fabrication
- Patent number 11,974,509
- Issue date Apr 30, 2024
- Microsoft Technology Licensing, LLC
- Peter Krogstrup Jeppesen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SiC single crystal growth crucible, SiC single crystal manufacturin...
- Patent number 11,946,156
- Issue date Apr 2, 2024
- Resonac Corporation
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of synthesizing molybdenum oxychloride by reacting molybdenu...
- Patent number 11,939,231
- Issue date Mar 26, 2024
- JX Metals Corporation
- Hideyuki Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Molecular-beam epitaxy system comprising an infrared radiation emit...
- Patent number 11,926,925
- Issue date Mar 12, 2024
- The Johns Hopkins University
- David B. Shrekenhamer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
- Patent number 11,905,618
- Issue date Feb 20, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods for preparing a monolayer or few-layer crystalline black ph...
- Patent number 11,885,039
- Issue date Jan 30, 2024
- The Hong Kong Polytechnic University
- Jianhua Hao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal epitaxial layer having a rhombohedral lattice
- Patent number 11,885,040
- Issue date Jan 30, 2024
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and methods for alignment of a susceptor
- Patent number 11,859,307
- Issue date Jan 2, 2024
- Applied Materials, Inc.
- Edric Tong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of silicon carbide ingot
- Patent number 11,859,306
- Issue date Jan 2, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Apparatus and method for growing high-purity semi-insulating silico...
- Patent number 11,851,784
- Issue date Dec 26, 2023
- Fujian Beidian Material Technologies Co., Ltd.
- Huarong Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large, UV-transparent aluminum nitride single crystals
- Patent number 11,828,002
- Issue date Nov 28, 2023
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing silicon ca...
- Patent number 11,821,105
- Issue date Nov 21, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal growth crucible and single crystal growth method
- Patent number 11,814,749
- Issue date Nov 14, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a silicon carbide ingot comprising moving a...
- Patent number 11,795,572
- Issue date Oct 24, 2023
- SENIC INC.
- Byung Kyu Jang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide seed crystal and method of manufacturing the same,...
- Patent number 11,781,241
- Issue date Oct 10, 2023
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal manufacturing apparatus
- Patent number 11,761,113
- Issue date Sep 19, 2023
- Resonac Corporation
- Kotaro Ishita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of producing SiC single crystal ingot
- Patent number 11,761,114
- Issue date Sep 19, 2023
- Resonac Corporation
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal sublimation growth apparatus
- Patent number 11,761,117
- Issue date Sep 19, 2023
- II-VI DELAWARE, INC.
- Avinash Gupta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for purifying a thallium compound using a carbon powder
- Patent number 11,725,303
- Issue date Aug 15, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of single crystal growth by controlling the heating of a sou...
- Patent number 11,718,926
- Issue date Aug 8, 2023
- Hon Hai Precision Industry Co., Ltd.
- Chung-Yi Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superconductor-semiconductor fabrication
- Patent number 11,711,986
- Issue date Jul 25, 2023
- Microsoft Technology Licensing LLC
- Peter Krogstrup Jeppesen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crucible having an improved crystal growth base for manufacturing s...
- Patent number 11,708,646
- Issue date Jul 25, 2023
- Showa Denko K.K.
- Rimpei Kindaichi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
- Publication number 20240158912
- Publication date May 16, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
- Publication number 20240150931
- Publication date May 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping XU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
- Publication number 20240150930
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Lin DONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
- Publication number 20240150929
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Li DONG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
- Publication number 20240110307
- Publication date Apr 4, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...
- Publication number 20240110275
- Publication date Apr 4, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Wolfgang BRAUN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240093408
- Publication date Mar 21, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS
- Publication number 20240084442
- Publication date Mar 14, 2024
- University of Ulsan Foundation for Industry Cooperation
- Eun Jung PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
- Publication number 20240068125
- Publication date Feb 29, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
- Publication number 20240052520
- Publication date Feb 15, 2024
- KISELKARBID I STOCKHOLM AB
- Johan Peter EKMAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240044045
- Publication date Feb 8, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240035201
- Publication date Feb 1, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CRYSTAL GROWTH FURNACE SYSTEM
- Publication number 20240011187
- Publication date Jan 11, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...
- Publication number 20240011184
- Publication date Jan 11, 2024
- National University of Singapore
- Andrivo RUSYDI
- C30 - CRYSTAL GROWTH
Information Patent Application
NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF
- Publication number 20240003051
- Publication date Jan 4, 2024
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of...
- Ruyi ZHANG
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...
- Publication number 20240003054
- Publication date Jan 4, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
Improved Furnace Apparatus for Crystal Production
- Publication number 20230407519
- Publication date Dec 21, 2023
- Zadient Technologies SAS
- Kagan Ceran
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING CRYSTALS
- Publication number 20230357951
- Publication date Nov 9, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR PREPARING TWO-DIMENSIONAL BLACK PHOSPHORUS
- Publication number 20230357953
- Publication date Nov 9, 2023
- The Hong Kong Polytechnic University
- Jianhua HAO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...
- Publication number 20230349068
- Publication date Nov 2, 2023
- Board of Regents, The University of Texas System
- Manuel Quevedo Lopez
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS
- Publication number 20230332327
- Publication date Oct 19, 2023
- EBNER INDUSTRIEOFENBAU GMBH
- Robert EBNER
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRI...
- Publication number 20230304186
- Publication date Sep 28, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER
- Publication number 20230287596
- Publication date Sep 14, 2023
- Northwestern University
- Mercouri G. Kanatzidis
- C01 - INORGANIC CHEMISTRY
Information Patent Application
EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY
- Publication number 20230287594
- Publication date Sep 14, 2023
- HUNAN SEMICOREPI SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Peng DU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING TH...
- Publication number 20230257869
- Publication date Aug 17, 2023
- QORVO BIOTECHNOLOGIES, LLC
- Derya Deniz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Crystal Growing Unit for Producing a Single Crystal
- Publication number 20230243064
- Publication date Aug 3, 2023
- Friedrich-Alexander-Universitat Erlangen-Nurnberg
- Peter Wellmann
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR DEPOSITING AN INORGANIC PEROVSKITE LAYER
- Publication number 20230242812
- Publication date Aug 3, 2023
- COMMISSRIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES AL TERNATIVES
- Louis Grenet
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUPERCONDUCTOR-SEMICONDUCTOR FABRICATION
- Publication number 20230247918
- Publication date Aug 3, 2023
- Microsoft Technology Licensing, LLC
- Peter Krogstrup Jeppesen
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...
- Publication number 20230203704
- Publication date Jun 29, 2023
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH

Heating of the deposition chamber, the substrate or the material to be evaporated

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Epi-growth apparatus of separate chamber type

Manufacturing method of silicon carbide wafer and semiconductor str...

Transparent conductive oxide thin film and use thereof

Superconductor-semiconductor fabrication

SiC single crystal growth crucible, SiC single crystal manufacturin...

Impurity control during formation of aluminum nitride crystals and...

Method of synthesizing molybdenum oxychloride by reacting molybdenu...

SiC single crystal manufacturing method, SiC single crystal manufac...

Molecular-beam epitaxy system comprising an infrared radiation emit...

Methods for crystal growth by replacing a sublimated target source...

Thermal control for formation and processing of aluminum nitride

Large diameter silicon carbide single crystals and apparatus and me...

Methods for preparing a monolayer or few-layer crystalline black ph...

Single crystal epitaxial layer having a rhombohedral lattice

Manufacturing method for a group-III nitride crystal that requires...

Apparatus and methods for alignment of a susceptor

Manufacturing method of silicon carbide ingot

Apparatus and method for growing high-purity semi-insulating silico...

Large, UV-transparent aluminum nitride single crystals

Silicon carbide seed crystal and method of manufacturing silicon ca...

Single crystal growth crucible and single crystal growth method

Method of manufacturing a silicon carbide ingot comprising moving a...

Silicon carbide seed crystal and method of manufacturing the same,...

SiC single crystal manufacturing apparatus

Method of producing SiC single crystal ingot

SiC single crystal sublimation growth apparatus

Method for purifying a thallium compound using a carbon powder

Method of single crystal growth by controlling the heating of a sou...

Superconductor-semiconductor fabrication

Crucible having an improved crystal growth base for manufacturing s...

Patents Applicationslast 30 patents

MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...

SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE

METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...

Method and Device for Producing a SiC Solid Material

MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS

SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL

SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE

METHOD OF USING SIC CONTAINER

Method and Device for Producing a SiC Solid Material

Method and Device for Producing a SiC Solid Material

CRYSTAL GROWTH FURNACE SYSTEM

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...

NEW TRANSPARENT CONDUCTIVE OXIDE THIN FILM AND USE THEREOF

PRODUCTION METHOD FOR AN SIC VOLUME MONOCRYSTAL OF INHOMOGENEOUS SC...

Improved Furnace Apparatus for Crystal Production

METHOD FOR GROWING CRYSTALS

METHODS FOR PREPARING TWO-DIMENSIONAL BLACK PHOSPHORUS

METHODS OF DEPOSITING FILMS WITH THE SAME STOICHIOMETRIC FEATURES A...

DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS

METHOD FOR MANUFACTURING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRI...

METHOD FOR PURIFYING A THALLIUM COMPOUND USING A CARBON POWDER

EFFUSION CELL WITH RETRACTABLE CRUCIBLE FOR MOLECULAR BEAM EPITAXY

SYSTEM FOR DEPOSITING PIEZOELECTRIC MATERIALS, METHODS FOR USING TH...

Crystal Growing Unit for Producing a Single Crystal

METHOD FOR DEPOSITING AN INORGANIC PEROVSKITE LAYER

SUPERCONDUCTOR-SEMICONDUCTOR FABRICATION

METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRA...