Hetero-junction transistors

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H01L29/737

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/737Hetero-junction transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 12,294,029
- Issue date May 6, 2025
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having tipless epitaxial source/drain regions
- Patent number 12,288,821
- Issue date Apr 29, 2025
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors with a nanosheet intrinsic base
- Patent number 12,272,740
- Issue date Apr 8, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice materials and applications
- Patent number 12,266,690
- Issue date Apr 1, 2025
- Quantum Semiconductor LLP
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with amorphous semiconductor regions
- Patent number 12,237,407
- Issue date Feb 25, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with terminals having a non-plan...
- Patent number 12,211,929
- Issue date Jan 28, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 12,199,145
- Issue date Jan 14, 2025
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterogeneous integration of radio frequency transistor chiplets ha...
- Patent number 12,191,295
- Issue date Jan 7, 2025
- PseudolithIC, Inc.
- James F. Buckwalter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cadmium selenide-indium arsenide heterojunction bipolar transistor
- Patent number 12,176,428
- Issue date Dec 24, 2024
- The United States of America, Represented by the Secretary of the Navy
- Kevin D. Goodman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and manufacturing method of the same
- Patent number 12,142,672
- Issue date Nov 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing the same
- Patent number 12,136,664
- Issue date Nov 5, 2024
- Murata Manufacturing Co., Ltd.
- Masayuki Aoike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base silicide on monocrystalline base structures
- Patent number 12,132,093
- Issue date Oct 29, 2024
- NXP USA, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having collector with doping concentration disco...
- Patent number 12,113,125
- Issue date Oct 8, 2024
- Skyworks Solutions, Inc.
- Kai Hay Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe HBT with graphene extrinsic base and methods
- Patent number 12,094,873
- Issue date Sep 17, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary bipolar junction transistor
- Patent number 12,078,551
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant profile control in heterojunction bipolar transistor (HBT)
- Patent number 12,068,402
- Issue date Aug 20, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal Current Bipolar Transistor with Silicon-Germanium base
- Patent number 12,062,699
- Issue date Aug 13, 2024
- University of Zagreb, Faculty of Electrical Engineering and Computing
- Tomislav Suligoj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,047,041
- Issue date Jul 23, 2024
- Murata Manufacturing Co., Ltd.
- Shunji Yoshimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 12,046,659
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,040,323
- Issue date Jul 16, 2024
- Murata Manufacturing Co., Ltd.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus including different thermal resistance valu...
- Patent number 12,009,273
- Issue date Jun 11, 2024
- Murata Manufacturing Co., Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flexible transistors with near-junction heat dissipation
- Patent number 11,996,473
- Issue date May 28, 2024
- Wisconsin Alumni Research Foundation
- Zhenqiang Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,996,474
- Issue date May 28, 2024
- Nexperia B.V.
- Stefan Berglund
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR AND BASE-COLLECTOR GRADE LAYER
- Publication number 20250031395
- Publication date Jan 23, 2025
- National Taiwan University
- Jian-Jang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD
- Publication number 20250030386
- Publication date Jan 23, 2025
- Skyworks Solutions, Inc.
- Weimin Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022873
- Publication date Jan 16, 2025
- Murata Manufacturing Co., Ltd.
- Masayuki AOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
- Publication number 20250022942
- Publication date Jan 16, 2025
- Murata Manufacturing Co., Ltd.
- Masayuki AOIKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20250015128
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20250006824
- Publication date Jan 2, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20240413227
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
- Publication number 20240405105
- Publication date Dec 5, 2024
- Analog Devices, Inc.
- F. Jacob Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20240405106
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR
- Publication number 20240369421
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Zi-Ang Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FEEDBACK CAPACITANCE REDUCTION
- Publication number 20240363742
- Publication date Oct 31, 2024
- MACOM Technology Solutions Holdings, Inc.
- Debdas Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CAPACITANCE AND LOW RESISTANCE DEVICES
- Publication number 20240339527
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. HOLT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240332201
- Publication date Oct 3, 2024
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND SEMICONDUCTOR
- Publication number 20240321975
- Publication date Sep 26, 2024
- Murata Manufacturing Co., Ltd.
- Kenji SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...
- Publication number 20240322002
- Publication date Sep 26, 2024
- North Carolina State University
- Spyridon Pavlidis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240304707
- Publication date Sep 12, 2024
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...
- Publication number 20240304703
- Publication date Sep 12, 2024
- University of Southern California
- Ajey Poovannummoottil JACOB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT COMPENSATION IN A MEMORY SYSTEM
- Publication number 20240274720
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Hiroshi Akamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER ELEMENTS
- Publication number 20240249992
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili S. RAGHUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEATER TERMINAL CONTACTS
- Publication number 20240250157
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili S. RAGHUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SILICON BIPOLAR JUNCTION TRANSISTOR, AND...
- Publication number 20240234552
- Publication date Jul 11, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)
- Publication number 20240222477
- Publication date Jul 4, 2024
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20240204053
- Publication date Jun 20, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION
- Publication number 20240204052
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...
- Publication number 20240204086
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240204087
- Publication date Jun 20, 2024
- Murata Manufacturing Co., Ltd.
- Yasunari UMEMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUN...
- Publication number 20240194770
- Publication date Jun 13, 2024
- Murata Manufacturing Co., Ltd.
- Takayuki TSUTSUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-JUNCTION BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE...
- Publication number 20240194561
- Publication date Jun 13, 2024
- Nippon Telegraph and Telephone Corporation
- Yuta Shiratori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER
- Publication number 20240170561
- Publication date May 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS

Hetero-junction transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Doped polar layers and semiconductor device incorporating same

Semiconductor device having tipless epitaxial source/drain regions

Bipolar junction transistors with a nanosheet intrinsic base

Superlattice materials and applications

Heterojunction bipolar transistor with amorphous semiconductor regions

III-N based material structures, methods, devices and circuit modul...

Heterojunction bipolar transistors with terminals having a non-plan...

Epitaxial structure and transistor including the same

Heterogeneous integration of radio frequency transistor chiplets ha...

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Cadmium selenide-indium arsenide heterojunction bipolar transistor

Heterojunction bipolar transistor with buried trap rich isolation r...

Lateral bipolar transistor

Heterojunction bipolar transistor and manufacturing method of the same

Transistor with wrap-around extrinsic base

Power amplifier modules including semiconductor resistor and tantal...

Semiconductor device and method for producing the same

Base silicide on monocrystalline base structures

Bipolar transistor having collector with doping concentration disco...

Semiconductor device with extrinsic base region and method of fabri...

SiGe HBT with graphene extrinsic base and methods

Complementary bipolar junction transistor

Dopant profile control in heterojunction bipolar transistor (HBT)

Horizontal Current Bipolar Transistor with Silicon-Germanium base

Semiconductor device

Semiconductor structure and manufacturing method thereof

Semiconductor device

Semiconductor apparatus including different thermal resistance valu...

Flexible transistors with near-junction heat dissipation

Semiconductor device and method of manufacture

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTOR AND BASE-COLLECTOR GRADE LAYER

POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

BIPOLAR TRANSISTOR

HIGH FREQUENCY HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES

DOPANT PROFILE CONTROL IN HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

COMPLEMENTARY BIPOLAR JUNCTION TRANSISTOR

TRANSISTOR FEEDBACK CAPACITANCE REDUCTION

LOW CAPACITANCE AND LOW RESISTANCE DEVICES

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

BIPOLAR TRANSISTOR AND SEMICONDUCTOR

HETEROGENEOUS HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES AND METHODS...

SIGE HBT AND METHODS OF MANUFACTURING THE SAME

METHOD OF FABRICATING LEAST DEFECTIVE NON-PLANAR BIPOLAR HETEROSTRU...

CONCURRENT COMPENSATION IN A MEMORY SYSTEM

HEATER ELEMENTS

HEATER TERMINAL CONTACTS

METHOD OF MANUFACTURING A SILICON BIPOLAR JUNCTION TRANSISTOR, AND...

HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR (HBT)

Epitaxial Structure And Transistor Including The Same

SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION

SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...

SEMICONDUCTOR DEVICE

HETEROJUNCTION BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND COMMUN...

HETERO-JUNCTION BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE...

HETEROJUNCTION BIPOLAR TRANSISTORS WITH A CUT STRESS LINER