Heterojunction gate for field effect devices

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H01L29/432

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/432Heterojunction gate for field effect devices

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device that includes a conductive member and an elect...
- Patent number 12,154,966
- Issue date Nov 26, 2024
- Kabushiki Kaisha Toshiba
- Hiroshi Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,142,675
- Issue date Nov 12, 2024
- Mitsubishi Electric Corporation
- Takuma Nanjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,094,963
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,973,078
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable thin film gallium and nitrogen containing devices
- Patent number 11,955,521
- Issue date Apr 9, 2024
- KYOCERA SLD Laser, Inc.
- James W. Raring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 11,848,376
- Issue date Dec 19, 2023
- HIPER SEMICONDUCTOR INC.
- Yan Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 11,804,538
- Issue date Oct 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and nitride semiconductor package
- Patent number 11,769,825
- Issue date Sep 26, 2023
- Rohm Co., Ltd.
- Taketoshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-Nitride transistor with a cap layer for RF operation
- Patent number 11,695,052
- Issue date Jul 4, 2023
- Finwave Semiconductor, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a p-type semiconductor structure, enhancement...
- Patent number 11,646,357
- Issue date May 9, 2023
- ENKRIS SEMICONDUCTOR, INC.
- Kai Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antenna gate field plate on 2DEG planar FET
- Patent number 11,626,513
- Issue date Apr 11, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional switch element
- Patent number 11,605,715
- Issue date Mar 14, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Masanori Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,581,310
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor (HEMT) devices and methods
- Patent number 11,552,189
- Issue date Jan 10, 2023
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,476,358
- Issue date Oct 18, 2022
- Kabushiki Kaisha Toshiba
- Yosuke Kajiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectrics materials
- Patent number 11,437,485
- Issue date Sep 6, 2022
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 11,404,557
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V field effect transistor and semiconductor structure
- Patent number 11,342,439
- Issue date May 24, 2022
- Nuvoton Technology Corporation
- Vivek Ningaraju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and nitride semiconductor package
- Patent number 11,233,144
- Issue date Jan 25, 2022
- Rohm Co., Ltd.
- Taketoshi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around transistors with high charge mobility channel mater...
- Patent number 11,222,952
- Issue date Jan 11, 2022
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method for manufacturing same
- Patent number 11,152,499
- Issue date Oct 19, 2021
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hideyuki Okita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack design for GaN e-mode transistor performance
- Patent number 11,114,556
- Issue date Sep 7, 2021
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits including transistors with different thresho...
- Patent number 11,024,626
- Issue date Jun 1, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,004,966
- Issue date May 11, 2021
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistors
- Patent number 10,991,819
- Issue date Apr 27, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with multiple channels and three-dimensional...
- Patent number 10,985,253
- Issue date Apr 20, 2021
- Ecole Polytechnique Federale de Lausanne (EPFL)
- Elison de Nazareth Matioli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device including protective layer and ohmic...
- Patent number 10,916,645
- Issue date Feb 9, 2021
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped gate dielectric materials
- Patent number 10,903,333
- Issue date Jan 26, 2021
- HRL Laboratories, LLC
- Yu Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack design for GaN e-mode transistor performance
- Patent number 10,804,386
- Issue date Oct 13, 2020
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20240274599
- Publication date Aug 15, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tunneling Enabled Feedback FET
- Publication number 20240213321
- Publication date Jun 27, 2024
- IMEC vzw
- Aryan Afzalian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240128366
- Publication date Apr 18, 2024
- Rohm Co., Ltd.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE
- Publication number 20230395650
- Publication date Dec 7, 2023
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20230369449
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20230187440
- Publication date Jun 15, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220336630
- Publication date Oct 20, 2022
- Kabushiki Kaisha Toshiba
- Hiroshi ONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220320272
- Publication date Oct 6, 2022
- Sony Semiconductor Solutions Corporation
- KOJI NAGATOMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220199821
- Publication date Jun 23, 2022
- Mitsubishi Electric Corporation
- Takuma NANJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20220165874
- Publication date May 26, 2022
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220045202
- Publication date Feb 10, 2022
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20210280580
- Publication date Sep 9, 2021
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20210280689
- Publication date Sep 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor With A Cap Layer For RF Operation
- Publication number 20210265477
- Publication date Aug 26, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210234029
- Publication date Jul 29, 2021
- Fujitsu Limited
- Atsushi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH HIGH CHARGE MOBILITY CHANNEL MATER...
- Publication number 20210226009
- Publication date Jul 22, 2021
- QUALCOMM Incorporated
- Bin YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped Gate Dielectrics Materials
- Publication number 20210151578
- Publication date May 20, 2021
- HRL LABORATORIES, LLC
- Yu CAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING A P-TYPE SEMICONDUCTOR LAYER, ENHANCED DEVICE...
- Publication number 20210143264
- Publication date May 13, 2021
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCH ELEMENT
- Publication number 20210134963
- Publication date May 6, 2021
- Panasonic Intellectual Property Management Co., Ltd.
- Masanori NOMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES AND METHODS
- Publication number 20210091219
- Publication date Mar 25, 2021
- STMicroelectronics S.r.l.
- Davide Giuseppe Patti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20200373408
- Publication date Nov 26, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Wei HSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA GATE FIELD PLATE ON 2DEG PLANAR FET
- Publication number 20200194578
- Publication date Jun 18, 2020
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...
- Publication number 20200135722
- Publication date Apr 30, 2020
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chan-Hong CHERN
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20200105917
- Publication date Apr 2, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- Hideyuki OKITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200044068
- Publication date Feb 6, 2020
- Panasonic Intellectual Property Management Co., Ltd.
- Hiroaki UENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH MULTIPLE CHANNELS AND THREE-DIMENSIONAL...
- Publication number 20190267454
- Publication date Aug 29, 2019
- ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Elison de Nazareth MATIOLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STRUCTURE
- Publication number 20190189773
- Publication date Jun 20, 2019
- NUVOTON TECHNOLOGY CORPORATION
- Vivek NINGARAJU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMBIPOLAR SYNAPTIC DEVICES
- Publication number 20190036053
- Publication date Jan 31, 2019
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
High Electron Mobility Transistors
- Publication number 20190013399
- Publication date Jan 10, 2019
- Taiwan Semiconductor Manufacturing Co., LTD
- Po-Chun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...
- Publication number 20180366559
- Publication date Dec 20, 2018
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS

Heterojunction gate for field effect devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Group III nitride-based transistor device

Semiconductor device that includes a conductive member and an elect...

Semiconductor device and method of manufacturing the same

Nitride semiconductor device

Apparatus and circuits including transistors with different thresho...

Manufacturable thin film gallium and nitrogen containing devices

High electron mobility transistor

Method of forming a high electron mobility transistor

Nitride semiconductor device and nitride semiconductor package

III-Nitride transistor with a cap layer for RF operation

Method for preparing a p-type semiconductor structure, enhancement...

Antenna gate field plate on 2DEG planar FET

Bidirectional switch element

Apparatus and circuits including transistors with different thresho...

High electron mobility transistor (HEMT) devices and methods

Semiconductor device

Doped gate dielectrics materials

Method of forming a high electron mobility transistor

III-V field effect transistor and semiconductor structure

Nitride semiconductor device and nitride semiconductor package

Gate all around transistors with high charge mobility channel mater...

Nitride semiconductor device and method for manufacturing same

Gate stack design for GaN e-mode transistor performance

Apparatus and circuits including transistors with different thresho...

Nitride semiconductor device

High electron mobility transistors

Semiconductor devices with multiple channels and three-dimensional...

Compound semiconductor device including protective layer and ohmic...

Doped gate dielectric materials

Gate stack design for GaN e-mode transistor performance

Patents Applicationslast 30 patents

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

Tunneling Enabled Feedback FET

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

III-Nitride Transistor With A Cap Layer For RF Operation

SEMICONDUCTOR DEVICE

GATE ALL AROUND TRANSISTORS WITH HIGH CHARGE MOBILITY CHANNEL MATER...

Doped Gate Dielectrics Materials

METHOD FOR PREPARING A P-TYPE SEMICONDUCTOR LAYER, ENHANCED DEVICE...

BIDIRECTIONAL SWITCH ELEMENT

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES AND METHODS

METHOD OF FORMING A HIGH ELECTRON MOBILITY TRANSISTOR

ANTENNA GATE FIELD PLATE ON 2DEG PLANAR FET

APPARATUS AND CIRCUITS INCLUDING TRANSISTORS WITH DIFFERENT THRESHO...

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES WITH MULTIPLE CHANNELS AND THREE-DIMENSIONAL...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STRUCTURE

AMBIPOLAR SYNAPTIC DEVICES

High Electron Mobility Transistors

ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ET...