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Impurity redistribution by oxidation
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Y10S148/078
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GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10
USPC classification
Y10S
TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S148/00
Metal treatment
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Y10S148/078
Impurity redistribution by oxidation
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Patent Grant
Method of manufacturing bipolar transistor with self-aligned base r...
Patent number
5,213,988
Issue date
May 25, 1993
Kabushiki Kaisha Toshiba
Tomohiro Yamauchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing semiconductor device
Patent number
5,015,593
Issue date
May 14, 1991
Kabushiki Kaisha Toshiba
Shigeo Yawata
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
3880682
Patent number
3,880,682
Issue date
Apr 29, 1975
C30 - CRYSTAL GROWTH
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3808060
Patent number
3,808,060
Issue date
Apr 30, 1974
H01 - BASIC ELECTRIC ELEMENTS
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3418180
Patent number
3,418,180
Issue date
Dec 24, 1968
H01 - BASIC ELECTRIC ELEMENTS
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3255056
Patent number
3,255,056
Issue date
Jun 7, 1966
H01 - BASIC ELECTRIC ELEMENTS
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3203840
Patent number
3,203,840
Issue date
Aug 31, 1965
H01 - BASIC ELECTRIC ELEMENTS
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