3880682

Information

• Patent Grant
• 3880682

• References
• Source

• Patent Number

  3,880,682

• Date Filed

  Not available

• Date Issued

  Tuesday, April 29, 1975
  51 years ago

• CPC

  • H01L21/2255 - the applied layer comprising oxides only
  • C30B31/02 - by contacting with diffusion material in the solid state
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/223 - using diffusion into or out of a solid from or into a gaseous phase
  • Y10S148/043 - Dual dielectric
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/078 - Impurity redistribution by oxidation
  • Y10S148/118 - Oxide films

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices