3203840

Information

• Patent Grant
• 3203840

• References
• Source

• Patent Number

  3,203,840

• Date Filed

  Not available

• Date Issued

  Tuesday, August 31, 1965
  59 years ago

• CPC

  • H01L21/31662 - of silicon in uncombined form
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02238 - silicon in uncombined form
  • H01L21/02255 - formation by thermal treatment
  • H01L21/2255 - the applied layer comprising oxides only
  • Y10S148/043 - Dual dielectric
  • Y10S148/049 - Equivalence and options
  • Y10S148/078 - Impurity redistribution by oxidation
  • Y10S148/144 - Shallow diffusion
  • Y10S148/145 - Shaped junctions
  • Y10S148/155 - Solid solubility
  • Y10S438/92 - Controlling diffusion profile by oxidation
  • Y10S438/923 - Diffusion through a layer

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 252 - Compositions
  • 257 - Active solid-state devices