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H01L29/267

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/267in different semiconductor regions

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Black phosphorus-two dimensional material complex and method of man...
- Patent number 12,211,904
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Minsu Seol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,206,048
- Issue date Jan 21, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative differential resistance device
- Patent number 12,206,021
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Kilsu Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cadmium selenide-indium arsenide heterojunction bipolar transistor
- Patent number 12,176,428
- Issue date Dec 24, 2024
- The United States of America, Represented by the Secretary of the Navy
- Kevin D. Goodman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,159,872
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,155,009
- Issue date Nov 26, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with patterned fin structure
- Patent number 12,131,901
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatuses including multiple channel materials within a tier stack
- Patent number 12,132,116
- Issue date Oct 29, 2024
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and epitaxial oxide device with impact ionization
- Patent number 12,125,946
- Issue date Oct 22, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,125,774
- Issue date Oct 22, 2024
- Sumitomo Electric Device Innovations, Inc.
- Hisashi Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer crystalline back gated thin film transistor
- Patent number 12,119,409
- Issue date Oct 15, 2024
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 12,112,985
- Issue date Oct 8, 2024
- GlobalWafers Co., Ltd.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with cap layer
- Patent number 12,107,165
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies comprising hydrogen diffused within two or mo...
- Patent number 12,101,946
- Issue date Sep 24, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide device with impact ionization
- Patent number 12,095,006
- Issue date Sep 17, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide materials, structures, and devices
- Patent number 12,087,880
- Issue date Sep 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device, compound semiconductor substrate, an...
- Patent number 12,087,852
- Issue date Sep 10, 2024
- Air Water Inc.
- Shigeomi Hishiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controlling wafer bow in a type III-V semiconductor device
- Patent number 12,080,785
- Issue date Sep 3, 2024
- Infineon Technologies Austria AG
- Seong-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 12,080,764
- Issue date Sep 3, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field plate extending from drain
- Patent number 12,074,199
- Issue date Aug 27, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- King Yuen Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance semiconductor oxide material channel regions for NMOS
- Patent number 12,068,319
- Issue date Aug 20, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimization of silicon germanium facets in planar metal oxide semi...
- Patent number 12,057,504
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Sin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor epitaxy structure
- Patent number 12,051,724
- Issue date Jul 30, 2024
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with spacer
- Patent number 12,040,237
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Heng Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR SYNTHESIZING NOBLE METAL-SEMICONDUCTOR HETEROSTRUCTURES...
- Publication number 20250031423
- Publication date Jan 23, 2025
- City University of Hong Kong
- Hua ZHANG
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES
- Publication number 20250022962
- Publication date Jan 16, 2025
- Lodestar Licensing Group LLC
- Akira Goda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20250015081
- Publication date Jan 9, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Jisong JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...
- Publication number 20250006799
- Publication date Jan 2, 2025
- AIR WATER INC.
- Keisuke KAWAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...
- Publication number 20240413154
- Publication date Dec 12, 2024
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices Having a Semiconductor Material That Is Semimetal in Bulk a...
- Publication number 20240387711
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240379459
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND M...
- Publication number 20240379863
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Gerben Doornbos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20240372035
- Publication date Nov 7, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ENHANCED BUFFER AND BACKBARRIER REGIONS
- Publication number 20240371992
- Publication date Nov 7, 2024
- Jinqiao Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MINIMIZATION OF SILICON GERMANIUM FACETS IN PLANAR METAL OXIDE SEMI...
- Publication number 20240363752
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Sin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
- Publication number 20240363754
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE
- Publication number 20240363691
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURE AND METHOD OF MANUFACTURING SAME
- Publication number 20240332019
- Publication date Oct 3, 2024
- Societe de commercialisation des produits de la recherche appliquee SOCPRA Sc...
- Alexandre HEINTZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290888
- Publication date Aug 29, 2024
- Samsung Electronics Co., Ltd.
- Jae-hoon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240266469
- Publication date Aug 8, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240258460
- Publication date Aug 1, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND RELATE...
- Publication number 20240234507
- Publication date Jul 11, 2024
- Wolfspeed, Inc.
- Madankumar Sampath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING MULTIPLE GATE ELECTRODES AND METH...
- Publication number 20240204074
- Publication date Jun 20, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING MULTIPLE GATE ELECTRODES
- Publication number 20240204072
- Publication date Jun 20, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method
- Publication number 20240204106
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Martin Christopher Holland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240194774
- Publication date Jun 13, 2024
- Taiwan-Asia Semiconductor Corporation
- Yen-Chun TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS SUPERJUNCTION DEVICES
- Publication number 20240186370
- Publication date Jun 6, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE TRANSISTOR
- Publication number 20240170612
- Publication date May 23, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE MOSFET
- Publication number 20240162292
- Publication date May 16, 2024
- Shanghai Huali Integrated Circuit Corporation
- Wenyin Weng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTING OXIDE CHANNEL FOR 3D NAND AND METHOD OF MAKING
- Publication number 20240153767
- Publication date May 9, 2024
- ASM IP HOLDING B.V.
- Bart Vermeulen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE
- Publication number 20240113120
- Publication date Apr 4, 2024
- SONY GROUP CORPORATION
- Hidetoshi OISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20240105512
- Publication date Mar 28, 2024
- GLOBALWAFERS CO., LTD.
- Chih-Yuan Chuang
- H01 - BASIC ELECTRIC ELEMENTS

in different semiconductor regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Black phosphorus-two dimensional material complex and method of man...

Epitaxial oxide materials, structures, and devices

Negative differential resistance device

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Strained semiconductor FET devices with epitaxial quality improvement

Cadmium selenide-indium arsenide heterojunction bipolar transistor

Transition metal dichalcogenide nanowires and methods of fabrication

Semiconductor device and method

IC including standard cells and SRAM cells

Epitaxial oxide materials, structures, and devices

Devices having a semiconductor material that is semimetal in bulk a...

Semiconductor device having a shaped epitaxial region with shaping...

Semiconductor structure with patterned fin structure

Apparatuses including multiple channel materials within a tier stack

Method and epitaxial oxide device with impact ionization

Semiconductor device and method of manufacturing the same

Multi-layer crystalline back gated thin film transistor

Semiconductor substrate

Semiconductor device structure with cap layer

Integrated assemblies comprising hydrogen diffused within two or mo...

Epitaxial oxide device with impact ionization

Epitaxial oxide materials, structures, and devices

Compound semiconductor device, compound semiconductor substrate, an...

Method of controlling wafer bow in a type III-V semiconductor device

Semiconductor structure

Semiconductor device with a field plate extending from drain

High performance semiconductor oxide material channel regions for NMOS

Minimization of silicon germanium facets in planar metal oxide semi...

Semiconductor epitaxy structure

Semiconductor device structure with spacer

Patents Applicationslast 30 patents

METHOD FOR SYNTHESIZING NOBLE METAL-SEMICONDUCTOR HETEROSTRUCTURES...

MEMORY DEVICES INCLUDING MULTI-MATERIAL CHANNEL STRUCTURES

FABRICATION METHOD OF SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING...

Integrated Assemblies Comprising Hydrogen Diffused Within Two or Mo...

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

Devices Having a Semiconductor Material That Is Semimetal in Bulk a...

SEMICONDUCTOR DEVICES

RAISED SOURCE/DRAIN OXIDE SEMICONDUCTING THIN FILM TRANSISTOR AND M...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

FIELD EFFECT TRANSISTOR WITH ENHANCED BUFFER AND BACKBARRIER REGIONS

MINIMIZATION OF SILICON GERMANIUM FACETS IN PLANAR METAL OXIDE SEMI...

SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER

WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR HETEROSTRUCTURE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE

EPITAXIAL OXIDE TRANSISTOR

EPITAXIAL OXIDE TRANSISTOR

BURIED SHIELD STRUCTURES FOR POWER SEMICONDUCTOR DEVICES AND RELATE...

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...

SEMICONDUCTOR STRUCTURE INCLUDING MULTIPLE GATE ELECTRODES AND METH...

SEMICONDUCTOR STRUCTURE INCLUDING MULTIPLE GATE ELECTRODES

Semiconductor Device and Method

HIGH ELECTRON MOBILITY TRANSISTOR

HETEROGENEOUS SUPERJUNCTION DEVICES

EPITAXIAL OXIDE TRANSISTOR

N-TYPE MOSFET

SEMICONDUCTING OXIDE CHANNEL FOR 3D NAND AND METHOD OF MAKING

COMPLEMENTARY TRANSISTOR AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR SUBSTRATE