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Industry

CPC
H01F41/34

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

Current Industry

H01F41/34in patterns

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive random access memory having a blocking layer on me...
- Patent number 12,150,313
- Issue date Nov 19, 2024
- United Microelectronics Corp.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive random access memory and method for fabricating th...
- Patent number 12,127,413
- Issue date Oct 22, 2024
- United Microelectronics Corp.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,102,014
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual magnetic tunnel junction (DMTJ) stack design
- Patent number 12,082,509
- Issue date Sep 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Vignesh Sundar
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming MTJS with lithography-variation independent crit...
- Patent number 12,058,940
- Issue date Aug 6, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 12,010,925
- Issue date Jun 11, 2024
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly physical ion resistive spacer to define chemical damage free...
- Patent number 11,985,905
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device and forming method thereof
- Patent number 11,950,431
- Issue date Apr 2, 2024
- United Microelectronics Corp.
- Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Products and applications for the templated fabrication of material...
- Patent number 11,923,131
- Issue date Mar 5, 2024
- Alexander Baker
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Inductive device
- Patent number 11,908,884
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yu Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell with top electrode via
- Patent number 11,889,769
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM fabrication and device
- Patent number 11,864,467
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jung-Tang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory and manufacturing method thereof
- Patent number 11,864,466
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shy-Jay Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...
- Patent number 11,856,864
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory and method for fabricating th...
- Patent number 11,849,592
- Issue date Dec 19, 2023
- United Microelectronics Corp.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Crystal seed layer for magnetic random access memory (MRAM)
- Patent number 11,842,757
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned encapsulation hard mask to separate physically under-e...
- Patent number 11,818,961
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,818,965
- Issue date Nov 14, 2023
- United Microelectronics Corp.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
MTJ CD variation by HM trimming
- Patent number 11,800,811
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Dongna Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistive random-access memory (MRAM) devices with self-ali...
- Patent number 11,723,282
- Issue date Aug 8, 2023
- Taiwan Semiconductor Manufacuturing Company, Ltd.
- Wei-Hao Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method of the same
- Patent number 11,678,493
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi terminal device stack formation methods
- Patent number 11,626,559
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive random access memory and method for fabricating th...
- Patent number 11,621,296
- Issue date Apr 4, 2023
- United Microelectronics Corp.
- Kun-Ju Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic property measuring system, a method for measuring magnetic...
- Patent number 11,600,537
- Issue date Mar 7, 2023
- Samsung Electronics Co., Ltd.
- Eunsun Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two terminal spin orbit memory devices and methods of fabrication
- Patent number 11,594,673
- Issue date Feb 28, 2023
- Intel Corporation
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric retention and method of forming memory pillar
- Patent number 11,569,442
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Saba Zare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly physical ion resistive spacer to define chemical damage free...
- Patent number 11,563,171
- Issue date Jan 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating magnetic memory device
- Patent number 11,545,617
- Issue date Jan 3, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction (MTJ) device and forming method thereof
- Patent number 11,545,521
- Issue date Jan 3, 2023
- United Microelectronics Corp.
- Wei Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 11,545,616
- Issue date Jan 3, 2023
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION
- Publication number 20240357941
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA
- Publication number 20240349620
- Publication date Oct 17, 2024
- International Business Machines Corporation
- Daniel Worledge
- G11 - INFORMATION STORAGE
Information Patent Application
HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE...
- Publication number 20240298546
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MICROMAGNETIC DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20240234001
- Publication date Jul 11, 2024
- EnaChip inc.
- Trifon Liakopoulos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATED FABRICATION OF MATERIALS USING COLD SPRAY DEPOSITION
- Publication number 20240177927
- Publication date May 30, 2024
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Alexander Baker
- B22 - CASTING POWDER METALLURGY
Information Patent Application
INDUCTANCE ELEMENT AND INDUCTANCE ELEMENT FABRICATION METHOD
- Publication number 20240112845
- Publication date Apr 4, 2024
- LAPIS SEMICONDUCTOR CO., LTD.
- KOHEI KUROGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHA...
- Publication number 20240099151
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20240090340
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Che Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNEL...
- Publication number 20240074322
- Publication date Feb 29, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Maxim Klebanov
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...
- Publication number 20240074209
- Publication date Feb 29, 2024
- UNITED MICROELECTRONICS CORP.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20240062794
- Publication date Feb 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240032440
- Publication date Jan 25, 2024
- UNITED MICROELECTRONICS CORP.
- Hui-Lin Wang
- G11 - INFORMATION STORAGE
Information Patent Application
INDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20240029953
- Publication date Jan 25, 2024
- Murata Manufacturing Co., Ltd.
- Keisuke KUNIMORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20230389435
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM Fabrication and Device
- Publication number 20230389438
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Tang Wu
- G11 - INFORMATION STORAGE
Information Patent Application
INDUCTIVE DEVICE
- Publication number 20230387182
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yu CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALI...
- Publication number 20230337545
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Hao LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230200088
- Publication date Jun 22, 2023
- UNITED MICROELECTRONICS CORP.
- Kun-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC...
- Publication number 20230187287
- Publication date Jun 15, 2023
- Samsung Electronics Co., Ltd.
- Eunsun Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Physical Ion Resistive Spacer To Define Chemical Damage Free...
- Publication number 20230165157
- Publication date May 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20230157182
- Publication date May 18, 2023
- UNITED MICROELECTRONICS CORP.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20230109928
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsann Lin
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230104744
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Ung Hwan Pi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND FORMING METHOD THEREOF
- Publication number 20230091364
- Publication date Mar 23, 2023
- UNITED MICROELECTRONICS CORP.
- Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC SHIELDING FOR MAGNETIC DEVICES
- Publication number 20230014296
- Publication date Jan 19, 2023
- Honeywell International Inc.
- Romney R. Katti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUPLED INDUCTOR STRUCTURES UTILIZING MAGNETIC FILMS
- Publication number 20220406522
- Publication date Dec 22, 2022
- Apple Inc.
- David P. Cappabianca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20220392954
- Publication date Dec 8, 2022
- UNITED MICROELECTRONICS CORP.
- Jia-Rong Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...
- Publication number 20220367793
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- G11 - INFORMATION STORAGE
Information Patent Application
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Sha...
- Publication number 20220367792
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH TOP ELECTRODE VIA
- Publication number 20220359815
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Che Ku
- G11 - INFORMATION STORAGE

in patterns

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetoresistive random access memory having a blocking layer on me...

Magnetoresistive random access memory and method for fabricating th...

Semiconductor device and method for fabricating the same

Dual magnetic tunnel junction (DMTJ) stack design

Method for forming MTJS with lithography-variation independent crit...

Magnetic memory device and method for manufacturing the same

Highly physical ion resistive spacer to define chemical damage free...

Magnetic tunnel junction (MTJ) device and forming method thereof

Products and applications for the templated fabrication of material...

Inductive device

Memory cell with top electrode via

MRAM fabrication and device

Magnetic random access memory and manufacturing method thereof

Sub 60nm etchless MRAM devices by ion beam etching fabricated T-sha...

Magnetoresistive random access memory and method for fabricating th...

Crystal seed layer for magnetic random access memory (MRAM)

Self-aligned encapsulation hard mask to separate physically under-e...

Semiconductor device and method for fabricating the same

MTJ CD variation by HM trimming

Magneto-resistive random-access memory (MRAM) devices with self-ali...

Semiconductor structure and manufacturing method of the same

Multi terminal device stack formation methods

Magnetoresistive random access memory and method for fabricating th...

Magnetic property measuring system, a method for measuring magnetic...

Two terminal spin orbit memory devices and methods of fabrication

Dielectric retention and method of forming memory pillar

Highly physical ion resistive spacer to define chemical damage free...

Method of fabricating magnetic memory device

Magnetic tunnel junction (MTJ) device and forming method thereof

Magnetic memory device and method for manufacturing the same

Patents Applicationslast 30 patents

MTJS WITH LITHOGRAPHY-VARIATION INDEPENDENT CRITICAL DIMENSION

MTJ PILLAR HAVING TEMPERATURE-INDEPENDENT DELTA

HIGHLY PHYSICAL ION RESISTIVE SPACER TO DEFINE CHEMICAL DAMAGE FREE...

MICROMAGNETIC DEVICE AND METHOD OF FORMING THE SAME

TEMPLATED FABRICATION OF MATERIALS USING COLD SPRAY DEPOSITION

INDUCTANCE ELEMENT AND INDUCTANCE ELEMENT FABRICATION METHOD

SUB 60NM ETCHLESS MRAM DEVICES BY ION BEAM ETCHING FABRICATED T-SHA...

MEMORY CELL WITH TOP ELECTRODE VIA

FABRICATING AN ELECTROCONDUCTIVE CONTACT ON A TOP LAYER OF A TUNNEL...

MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING TH...

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INDUCTOR COMPONENT AND METHOD FOR MANUFACTURING SAME

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

MRAM Fabrication and Device

INDUCTIVE DEVICE

MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY (MRAM) DEVICES WITH SELF-ALI...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MAGNETIC PROPERTY MEASURING SYSTEM, A METHOD FOR MEASURING MAGNETIC...

Highly Physical Ion Resistive Spacer To Define Chemical Damage Free...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

CRYSTAL SEED LAYER FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

MAGNETIC TUNNEL JUNCTION (MTJ) DEVICE AND FORMING METHOD THEREOF

MAGNETIC SHIELDING FOR MAGNETIC DEVICES

COUPLED INDUCTOR STRUCTURES UTILIZING MAGNETIC FILMS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SELF-ALIGNED ENCAPSULATION HARD MASK TO SEPARATE PHYSICALLY UNDER-E...

Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Sha...

MEMORY CELL WITH TOP ELECTRODE VIA