including, apart from doping materials or other impurities, only AIIIBV compounds

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/20including, apart from doping materials or other impurities, only AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Non-linear HEMT devices
- Patent number 12,183,815
- Issue date Dec 31, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Notch shape of trench gate bottom corner for better breakdown volta...
- Patent number 12,183,795
- Issue date Dec 31, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Conghui Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for RF integrated circuit
- Patent number 12,183,676
- Issue date Dec 31, 2024
- MONDE WIRELESS INC.
- Brian Romanczyk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with multi-layer barrier region
- Patent number 12,183,816
- Issue date Dec 31, 2024
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic semiconductor device assemblies
- Patent number 12,183,785
- Issue date Dec 31, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic semiconductor device and hybrid semiconductor device
- Patent number 12,183,817
- Issue date Dec 31, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Kaname Motoyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical circuit of semiconductor channel resistor and apparatus...
- Patent number 12,176,306
- Issue date Dec 24, 2024
- Electronics and Telecommunications Research Institute
- Sang Heung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and semiconductor device
- Patent number 12,176,430
- Issue date Dec 24, 2024
- Vanguard International Semiconductor Corporation
- Chih-Yen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, having via wiring, method of manufacturing se...
- Patent number 12,176,265
- Issue date Dec 24, 2024
- Fujitsu Limited
- Naoya Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,176,414
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device employing two-dimensional electron gas with reduc...
- Patent number 12,176,431
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Wen Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge balanced power Schottky barrier diodes
- Patent number 12,176,442
- Issue date Dec 24, 2024
- Virginia Tech Intellectual Properties, Inc.
- Yuhao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transformer-based drive for GaN devices
- Patent number 12,176,887
- Issue date Dec 24, 2024
- Infineon Technologies Austria AG
- Derek Bernardon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitride semiconductor, semiconductor device, and method for manufac...
- Patent number 12,170,318
- Issue date Dec 17, 2024
- Kabushiki Kaisha Toshiba
- Toshiki Hikosaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured electronic devices
- Patent number 12,170,330
- Issue date Dec 17, 2024
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device with element isolation area
- Patent number 12,170,316
- Issue date Dec 17, 2024
- Kabushika Kaisha Toshiba
- Akira Yoshioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano transistors with source/drain having side contacts to 2-D mate...
- Patent number 12,170,323
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Ching Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P type gallium nitride conformal epitaxial structure over thick buf...
- Patent number 12,170,328
- Issue date Dec 17, 2024
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device comprising layered structure of active...
- Patent number 12,166,083
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Yosuke Hata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,165,957
- Issue date Dec 10, 2024
- Rohm Co., Ltd.
- Minoru Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solder resist structure for embedded die packaging of power semicon...
- Patent number 12,166,115
- Issue date Dec 10, 2024
- Infineon Technologies Canada Inc.
- Cameron McKnight-MacNeil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,166,116
- Issue date Dec 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Hao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate
- Patent number 12,166,086
- Issue date Dec 10, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICA...
- Publication number 20240429230
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Matthew King
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429297
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURI...
- Publication number 20240426023
- Publication date Dec 26, 2024
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR SUPPRESSING ODD-MODE INSTABILITIES
- Publication number 20240429185
- Publication date Dec 26, 2024
- Darrell Glenn Hill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20240429233
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429295
- Publication date Dec 26, 2024
- XIAMEN SAN'AN INTEGRATED CIRCUIT CO., LTD.
- Dongpo CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...
- Publication number 20240429870
- Publication date Dec 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Matthew Mellor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
- Publication number 20240426025
- Publication date Dec 26, 2024
- AXT, Inc.
- Rajaram Shetty
- C30 - CRYSTAL GROWTH
Information Patent Application
Topside Cooling for Semiconductor Device
- Publication number 20240429120
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Michael Lee Schuette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation for Isolated Channel Structures in Group III-Nitride S...
- Publication number 20240429314
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY
- Publication number 20240429306
- Publication date Dec 26, 2024
- The Regents of the University of Michigan
- Zetian Mi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTOR WITH HYBRID CONDUCTION MECHANISM AND MAN...
- Publication number 20240429229
- Publication date Dec 26, 2024
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...
- Publication number 20240421151
- Publication date Dec 19, 2024
- Qorvo US, Inc.
- Zhongda Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...
- Publication number 20240421196
- Publication date Dec 19, 2024
- GaN Systems Inc.
- Abhinandan DIXIT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES
- Publication number 20240421194
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-An LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS AND METHODS FOR CONTROLLING A VOLTAGE OF A SEMICONDUCTOR S...
- Publication number 20240421813
- Publication date Dec 19, 2024
- Navitas Semiconductor Limited
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GAL...
- Publication number 20240420995
- Publication date Dec 19, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421195
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING HEAT SHIELD
- Publication number 20240421217
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...
- Publication number 20240421139
- Publication date Dec 19, 2024
- Transphorm Technology, Inc.
- Davide Bisi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES
- Publication number 20240420957
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Contact Resistance in Semiconductor Devices with Implanted Regions
- Publication number 20240421193
- Publication date Dec 19, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20240421218
- Publication date Dec 19, 2024
- Lucid Microsystems PTE LTD.
- Zihao Mike GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20240421219
- Publication date Dec 19, 2024
- UNITED MICROELECTRONICS CORP.
- Kai-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421220
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20240413227
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Takuya Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20240413236
- Publication date Dec 12, 2024
- Vanguard International Semiconductor Corporation
- Yang Du
- H01 - BASIC ELECTRIC ELEMENTS

including, apart from doping materials or other impurities, only AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Non-linear HEMT devices

Multi-channel transistor

Notch shape of trench gate bottom corner for better breakdown volta...

Semiconductor device for RF integrated circuit

Type III-V semiconductor device with multi-layer barrier region

Monolithic semiconductor device assemblies

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Monolithic semiconductor device and hybrid semiconductor device

Electrical circuit of semiconductor channel resistor and apparatus...

Semiconductor structure and semiconductor device

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor device, having via wiring, method of manufacturing se...

Transition metal dichalcogenide nanowires and methods of fabrication

High electron mobility transistor and method for forming the same

Electronic device employing two-dimensional electron gas with reduc...

Charge balanced power Schottky barrier diodes

Transformer-based drive for GaN devices

Incorporating semiconductors on a polycrystalline diamond substrate

Nitride semiconductor, semiconductor device, and method for manufac...

Three dimensional vertically structured electronic devices

Nitride semiconductor device with element isolation area

Nano transistors with source/drain having side contacts to 2-D mate...

P type gallium nitride conformal epitaxial structure over thick buf...

Nitride semiconductor device comprising layered structure of active...

Group III nitride-based transistor device

Semiconductor device

Solder resist structure for embedded die packaging of power semicon...

Semiconductor device and fabrication method thereof

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

Epitaxial substrate

Patents Applicationslast 30 patents

INTEGRATED RESISTORS WITH INCREASED SHEET RESISTANCE FOR RF APPLICA...

SEMICONDUCTOR DEVICE

GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURI...

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

STRUCTURES FOR SUPPRESSING ODD-MODE INSTABILITIES

FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

GALLIUM NITRIDE-BASED DEVICE AND METHOD FOR MANUFACTURING THE SAME

Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...

LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS

Topside Cooling for Semiconductor Device

Implantation for Isolated Channel Structures in Group III-Nitride S...

SEMICONDUCTOR HETEROSTRUCTURES WITH QUATERNARY III-NITRIDE ALLOY

GATE-ALL-AROUND TRANSISTOR WITH HYBRID CONDUCTION MECHANISM AND MAN...

VERTICAL JUNCTION FIELD-EFFECT TRANSISTORS WITH SOURCE-DRAIN DIODE...

GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...

GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES

CIRCUITS AND METHODS FOR CONTROLLING A VOLTAGE OF A SEMICONDUCTOR S...

ATOMIC LAYER DEPOSITION OF BARRIER METAL LAYER FOR ELECTRODE OF GAL...

NITRIDE SEMICONDUCTOR DEVICE

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

SEMICONDUCTOR DEVICE INCLUDING HEAT SHIELD

MODULE ASSEMBLY OF MULTIPLE SEMICONDUCTOR DEVICES WITH INSULATING S...

ELECTRIC FIELD MANAGEMENT IN SEMICONDUCTOR DEVICES

Low Contact Resistance in Semiconductor Devices with Implanted Regions

HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

NITRIDE SEMICONDUCTOR DEVICE

GROUP III NITRIDE DEVICE

BIPOLAR TRANSISTOR

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR