including, apart from doping materials or other impurities, only AIIIBV compounds

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H01L29/20

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/20including, apart from doping materials or other impurities, only AIIIBV compounds

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High electron mobility transistor and method for forming the same
- Patent number 12,237,395
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Ko-Wei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor device and nitride s...
- Patent number 12,237,379
- Issue date Feb 25, 2025
- Fuji Electric Co., Ltd.
- Ryo Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
WBG and UWBG semiconductor with p- and n-type conductivity and proc...
- Patent number 12,237,169
- Issue date Feb 25, 2025
- The Government of the United States of America, as represented by the Secreta...
- Boris N. Feigelson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel field-effect transistor with u-shaped gate and band...
- Patent number 12,237,376
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,237,409
- Issue date Feb 25, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaAIN-based semiconductor device
- Patent number 12,237,423
- Issue date Feb 25, 2025
- Japan Science and Technology Agency
- Hiroshi Fujioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power amplifier
- Patent number 12,237,382
- Issue date Feb 25, 2025
- WIN SEMICONDUCTORS CORP.
- Chieh-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate including nitride semiconductor la...
- Patent number 12,230,679
- Issue date Feb 18, 2025
- Air Water Inc.
- Sumito Ouchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating a semiconductor wafer
- Patent number 12,230,689
- Issue date Feb 18, 2025
- Infineon Technologies AG
- Helmut Brech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N based material structures, methods, devices and circuit modul...
- Patent number 12,230,678
- Issue date Feb 18, 2025
- The Regents of the University of California
- Umesh K. Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modification of electric fields of compound semiconductor devices
- Patent number 12,230,699
- Issue date Feb 18, 2025
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device including hBNC layer,...
- Patent number 12,230,680
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Piao Chuu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and circuits with dual threshold voltage transistors and...
- Patent number 12,230,636
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chan-Hong Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum structure getter for radiation hardened transistors
- Patent number 12,230,677
- Issue date Feb 18, 2025
- The United States of America, as represented by the Secretary of the Navy
- Timothy Allen Morgan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high electron mobility transistor
- Patent number 12,230,690
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Type III-V semiconductor device with structured passivation
- Patent number 12,230,700
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bypassed gate transistors having improved stability
- Patent number 12,230,701
- Issue date Feb 18, 2025
- MACOM Technology Solutions Holdings, Inc.
- Khaled Fayed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT with stair-like compound layer at drain
- Patent number 12,224,333
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PGaN enhancement mode HEMTs with dopant diffusion spacer
- Patent number 12,224,337
- Issue date Feb 11, 2025
- Intel Corporation
- Michael Beumer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,224,339
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Yu-Ming Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure having diffusion barrier layer
- Patent number 12,224,322
- Issue date Feb 11, 2025
- GlobalWafers Co., Ltd.
- Tzu-Yao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for control of sidewall orientation in vertical g...
- Patent number 12,224,344
- Issue date Feb 11, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and fabricating method of the same
- Patent number 12,224,338
- Issue date Feb 11, 2025
- United Microelectronics Corp.
- Huai-Tzu Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier with quasi-static drain voltage adjustment
- Patent number 12,224,721
- Issue date Feb 11, 2025
- Qorvo US, Inc.
- Joel Lawrence Dawson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device
- Patent number 12,218,204
- Issue date Feb 4, 2025
- SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
- Ha Jong Bong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric devices including a single crystalline ferroelectric...
- Patent number 12,219,776
- Issue date Feb 4, 2025
- SanDisk Technologies LLC
- Adarsh Rajashekhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 12,218,207
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PACKAGE
- Publication number 20250072020
- Publication date Feb 27, 2025
- Rohm Co., Ltd.
- Akira SAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250072019
- Publication date Feb 27, 2025
- ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Jun Hwan SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...
- Publication number 20250072025
- Publication date Feb 27, 2025
- National Yang Ming Chiao Tung University
- Edward Yi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20250072075
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Da-Jun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH THERMAL PLUG
- Publication number 20250072024
- Publication date Feb 27, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Alvin J. Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN
- Publication number 20250072026
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION
- Publication number 20250072033
- Publication date Feb 27, 2025
- Infineon Technologies Austria AG
- Korbinian Reiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERLATTICE COMPOSITE STRUCTURE AND SEMICONDUCTOR LAMINATE STRUCTURE
- Publication number 20250072074
- Publication date Feb 27, 2025
- WAFER WORKS CORPORATION
- Wen-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE
- Publication number 20250072032
- Publication date Feb 27, 2025
- Industrial Technology Research Institute
- Shin-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250072034
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED STRUCTURE, FABRICATION METHOD OF THE STACKED STRUCTURE, AND...
- Publication number 20250072068
- Publication date Feb 27, 2025
- Japan Display Inc.
- Masumi NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250072088
- Publication date Feb 27, 2025
- ROHM CO., LTD.
- Tomonori KATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A MEMORY DEVICE
- Publication number 20250063732
- Publication date Feb 20, 2025
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...
- Publication number 20250063787
- Publication date Feb 20, 2025
- Rohm Co., Ltd.
- Yosuke HATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250063786
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...
- Publication number 20250063756
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20250063754
- Publication date Feb 20, 2025
- Fujitsu Limited
- Kenji HOMMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE SEMICONDUCTOR STRUCTURE ON SILICON-ON-INSULATOR A...
- Publication number 20250056858
- Publication date Feb 13, 2025
- SOITEC
- Christelle Veytizou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES
- Publication number 20250056927
- Publication date Feb 13, 2025
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250056827
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jaejoon OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...
- Publication number 20250056830
- Publication date Feb 13, 2025
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNDER VOLTAGE LOCK-OUT CIRCUIT
- Publication number 20250055451
- Publication date Feb 13, 2025
- Tagore Technology, Inc.
- Pramit SARKAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056826
- Publication date Feb 13, 2025
- Kabushiki Kaisha Toshiba
- Yosuke KAJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20250054766
- Publication date Feb 13, 2025
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048668
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Liuchang MENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048713
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Zhiwen DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS

including, apart from doping materials or other impurities, only AIIIBV compounds

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High electron mobility transistor and method for forming the same

Method for manufacturing nitride semiconductor device and nitride s...

WBG and UWBG semiconductor with p- and n-type conductivity and proc...

Vertical tunnel field-effect transistor with u-shaped gate and band...

Semiconductor device

InGaAIN-based semiconductor device

Semiconductor device and power amplifier

Compound semiconductor substrate including nitride semiconductor la...

Semiconductor device and method for fabricating a semiconductor wafer

III-N based material structures, methods, devices and circuit modul...

Modification of electric fields of compound semiconductor devices

Manufacturing method of semiconductor device including hBNC layer,...

Apparatus and circuits with dual threshold voltage transistors and...

Quantum structure getter for radiation hardened transistors

Method of forming a high electron mobility transistor

Type III-V semiconductor device with structured passivation

Bypassed gate transistors having improved stability

HEMT with stair-like compound layer at drain

PGaN enhancement mode HEMTs with dopant diffusion spacer

High electron mobility transistor

Heterojunction semiconductor device with low on-resistance

Epitaxial structure having diffusion barrier layer

Semiconductor device

Method and system for control of sidewall orientation in vertical g...

HEMT and fabricating method of the same

Power amplifier with quasi-static drain voltage adjustment

Engineered substrate structures for power and RF applications

Semiconductor device

Ferroelectric devices including a single crystalline ferroelectric...

Method for manufacturing semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR PACKAGE

SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MANUFACTURING THE...

COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

TRANSISTOR WITH THERMAL PLUG

HEMT WITH STAIR-LIKE COMPOUND LAYER AT DRAIN

TYPE III-V SEMICONDUCTOR DEVICE WITH MULTI-LAYER BARRIER REGION

SUPERLATTICE COMPOSITE STRUCTURE AND SEMICONDUCTOR LAMINATE STRUCTURE

SEMICONDUCTOR POWER DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

STACKED STRUCTURE, FABRICATION METHOD OF THE STACKED STRUCTURE, AND...

NITRIDE SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

A MEMORY DEVICE

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

NITRIDE SEMICONDUCTOR DEVICE COMPRISING LAYERED STRUCTURE OF ACTIVE...

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUF...

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

GROUP III-NITRIDE SEMICONDUCTOR STRUCTURE ON SILICON-ON-INSULATOR A...

EPITAXIAL OXIDE MATERIALS, STRUCTURES, AND DEVICES

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

METHOD FOR PRODUCING A POWER FINFET BY MEANS OF LITHOGRAPHY MASKS,...

UNDER VOLTAGE LOCK-OUT CIRCUIT

SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...