including two or more of the elements provided for in group H01L29/16

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H01L29/161

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/161including two or more of the elements provided for in group H01L29/16

Industries

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Patents Grantslast 30 patents

Information Patent Grant
P-type field effect transistor (PFET) on a silicon germanium (Ge) b...
- Patent number 12,224,347
- Issue date Feb 11, 2025
- QUALCOMM Incorporated
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device architectures with tensile and compressive strained substrates
- Patent number 12,218,201
- Issue date Feb 4, 2025
- National University of Singapore
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Fin at a S/D region and a semiconduct...
- Patent number 12,218,136
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and fabrication techniques
- Patent number 12,211,853
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- John H. Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing off-state leakage in semiconductor devices
- Patent number 12,191,349
- Issue date Jan 7, 2025
- Intel Corporation
- Dipanjan Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,191,380
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-to-semiconductor contact including a 2D crystal material layer
- Patent number 12,183,780
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Yeonchoo Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,159,925
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium tin gate-all-around device
- Patent number 12,154,951
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,148,794
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu Kuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices and methods of forming the same
- Patent number 12,148,673
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming source/drain contacts
- Patent number 12,142,663
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device with high-K metal gate stack
- Patent number 12,142,685
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Performing annealing process to improve Fin quality of a FinFET sem...
- Patent number 12,142,490
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a shaped epitaxial region with shaping...
- Patent number 12,142,681
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field-effect transistor having source side lateral...
- Patent number 12,136,671
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with reduced defect and methods of forming same
- Patent number 12,125,892
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fin-type field effect transistor and me...
- Patent number 12,119,351
- Issue date Oct 15, 2024
- Samsung Electronics Co., Ltd.
- Dong-Il Bae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,119,394
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with cap layer
- Patent number 12,107,165
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a metal silicate film on a substrate in a react...
- Patent number 12,094,936
- Issue date Sep 17, 2024
- ASM IP Holding B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
FETs and methods of forming FETs
- Patent number 12,094,761
- Issue date Sep 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,080,774
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Semiconductor device and fabrication method of the semiconductor de...
- Patent number 12,074,129
- Issue date Aug 27, 2024
- Rohm Co., Ltd.
- Takukazu Otsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed light sensing apparatus
- Patent number 12,072,448
- Issue date Aug 27, 2024
- Artilux, Inc.
- Yun-Chung Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,068,321
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,062,661
- Issue date Aug 13, 2024
- Samsung Electronics Co., Ltd.
- Jongho Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND METHOD OF MAKING A BIPOLAR TRANSISTOR
- Publication number 20250048663
- Publication date Feb 6, 2025
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250015084
- Publication date Jan 9, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Yongliang Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20250015129
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shu KUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM TIN GATE-ALL-AROUND DEVICE
- Publication number 20250015140
- Publication date Jan 9, 2025
- Taiwean Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FETS and Methods of Forming FETS
- Publication number 20250006549
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen-Ru Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240405022
- Publication date Dec 5, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395936
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fang-Liang LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...
- Publication number 20240395937
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Device With High-K Metal Gate Stack
- Publication number 20240387736
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20240387709
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ssu-Yu Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20240387287
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Features
- Publication number 20240387739
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS
- Publication number 20240387289
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SOURCE/DRAIN CONTACTS
- Publication number 20240379814
- Publication date Nov 14, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES COMPRISING CRYSTALLINE MATERIALS
- Publication number 20240379739
- Publication date Nov 14, 2024
- Micron Technology, Inc.
- Michael Mutch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEM...
- Publication number 20240379381
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzung-Yi Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240371982
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET DEVICE AND METHODS OF FORMING THE SAME
- Publication number 20240372001
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME
- Publication number 20240371964
- Publication date Nov 7, 2024
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-SPEED LIGHT SENSING APPARATUS
- Publication number 20240369690
- Publication date Nov 7, 2024
- Artilux, Inc.
- Yun-Chung Na
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240371983
- Publication date Nov 7, 2024
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER
- Publication number 20240363754
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Feng-Ching CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20240363755
- Publication date Oct 31, 2024
- Adeia Semiconductor Solutions LLC
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20240347642
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY DEVICE AND METHOD THEREOF
- Publication number 20240339547
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jiun-Yun LI
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL
- Publication number 20240332392
- Publication date Oct 3, 2024
- Intel Corporation
- Dan S. LAVRIC
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING...
- Publication number 20240322026
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS
- Publication number 20240304724
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co, LTD.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS

including two or more of the elements provided for in group H01L29/16

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

P-type field effect transistor (PFET) on a silicon germanium (Ge) b...

Device architectures with tensile and compressive strained substrates

Semiconductor device having a Fin at a S/D region and a semiconduct...

Integrated circuit devices and fabrication techniques

IC including standard cells and SRAM cells

Strained-channel fin FETs

Reducing off-state leakage in semiconductor devices

Semiconductor device and method

Metal-to-semiconductor contact including a 2D crystal material layer

Semiconductor device and method

Germanium tin gate-all-around device

Method of manufacturing a semiconductor device and a semiconductor...

FinFET devices and methods of forming the same

Method for forming source/drain contacts

FinFET device with high-K metal gate stack

Performing annealing process to improve Fin quality of a FinFET sem...

Semiconductor device having a shaped epitaxial region with shaping...

Gate-all-around field-effect transistor having source side lateral...

Transistors with reduced defect and methods of forming same

Semiconductor device having fin-type field effect transistor and me...

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device structure with cap layer

Methods for forming a metal silicate film on a substrate in a react...

FETs and methods of forming FETs

Semiconductor device and method of fabricating the same

SiC composite substrate including biaxially oreinted SiC layer and...

Semiconductor device and fabrication method of the semiconductor de...

High-speed light sensing apparatus

Semiconductor devices

Semiconductor device

Patents Applicationslast 30 patents

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

BIPOLAR TRANSISTOR AND METHOD OF MAKING A BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

GERMANIUM TIN GATE-ALL-AROUND DEVICE

FETS and Methods of Forming FETS

NON-PLANAR TRANSISTOR STRUCTURES AND METHODS OF MANUFACTURING THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE HAVING A SHAPED EPITAXIAL REGION WITH SHAPING...

FinFET Device With High-K Metal Gate Stack

SEMICONDUCTOR DEVICE AND METHOD

FINFET DEVICES AND METHODS OF FORMING THE SAME

Epitaxial Features

DIFFERENT SOURCE/DRAIN PROFILES FOR N-TYPE FINFETS AND P-TYPE FINFETS

METHOD FOR FORMING SOURCE/DRAIN CONTACTS

DEVICES COMPRISING CRYSTALLINE MATERIALS

PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEM...

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

FinFET DEVICE AND METHODS OF FORMING THE SAME

TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME

HIGH-SPEED LIGHT SENSING APPARATUS

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE STRUCTURE WITH CAP LAYER

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

MULTI-GATE DEVICE AND RELATED METHODS

FLASH MEMORY DEVICE AND METHOD THEREOF

INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL

NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAIN DOPANT BLOCKING...

METHOD OF FORMING SOURCE/DRAIN EPITAXIAL STACKS