including two or more of the elements provided for in group H01L29/16

Industry

CPC
H01L29/161

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/161including two or more of the elements provided for in group H01L29/16

Industries

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method for semiconductor laminated film, and semicond...
- Patent number 11,972,947
- Issue date Apr 30, 2024
- National University Corporation Tokyo University of Agriculture and Technology
- Yoshiyuki Suda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
FinFET channel on oxide structures and related methods
- Patent number 11,972,981
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual threshold voltage (VT) channel devices and their methods of fa...
- Patent number 11,967,615
- Issue date Apr 23, 2024
- Intel Corporation
- Hsu-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,967,635
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with a fin and gate structure and method making...
- Patent number 11,961,900
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,961,839
- Issue date Apr 16, 2024
- Samsung Electronics Co., Ltd.
- Hyojin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including protruding insulation portions betw...
- Patent number 11,955,517
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-gate device and related methods
- Patent number 11,949,016
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Hao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power reduction in finFET structures
- Patent number 11,948,839
- Issue date Apr 2, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 11,948,942
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Minhee Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,558
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Mongsong Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro-sensor for detecting chemical species and associated manufact...
- Patent number 11,940,407
- Issue date Mar 26, 2024
- Soitec
- Bruno Ghyselen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having asymmetrical source/drain
- Patent number 11,942,515
- Issue date Mar 26, 2024
- Samsung Electronics Co., Ltd.
- Jongki Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,923,359
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Shu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin loss prevention
- Patent number 11,923,250
- Issue date Mar 5, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Hung-Ju Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having logic cells with multiple cell heights
- Patent number 11,916,055
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing methods thereof
- Patent number 11,908,952
- Issue date Feb 20, 2024
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Integrated circuit and static random access memory thereof
- Patent number 11,910,586
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 11,901,442
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a sacrificial liner for dual channel devices
- Patent number 11,894,462
- Issue date Feb 6, 2024
- Adeia Semiconductor Solutions LLC
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mid-processing removal of semiconductor fins during fabrication of...
- Patent number 11,887,860
- Issue date Jan 30, 2024
- Intel Corporation
- Mehmet O. Baykan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for SRAM FinFET device having an oxide feature
- Patent number 11,889,674
- Issue date Jan 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-layer STI liner for nanosheet leakage control
- Patent number 11,881,505
- Issue date Jan 23, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar integrated circuit structures having mitigated source or...
- Patent number 11,869,891
- Issue date Jan 9, 2024
- Intel Corporation
- Jun Sung Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate induced drain leakage reduction in FinFETs
- Patent number 11,855,180
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming
- Patent number 11,854,811
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Min Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Melt anneal source and drain regions
- Patent number 11,855,146
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact on FinFET
- Patent number 11,854,898
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Li Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming fin field effect transistor (FinFET) device stru...
- Patent number 11,855,208
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different source/drain profiles for n-type FinFETs and p-type FinFETs
- Patent number 11,854,904
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...
- Publication number 20240145581
- Publication date May 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES
- Publication number 20240145480
- Publication date May 2, 2024
- STMicroelectronics, Inc.
- John H. ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRU...
- Publication number 20240128321
- Publication date Apr 18, 2024
- Samsung Electronics Co., Ltd.
- Jongryeol Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240105776
- Publication date Mar 28, 2024
- Samsung Electronics Co.,Ltd.
- Namkyu Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR...
- Publication number 20240096896
- Publication date Mar 21, 2024
- Intel Corporation
- Jun Sung KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS
- Publication number 20240097006
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin Loss Prevention
- Publication number 20240087961
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Ju CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MELT ANNEAL SOURCE AND DRAIN REGIONS
- Publication number 20240088225
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Su-Hao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEIGHT CONTROL IN NANOSHEET DEVICES
- Publication number 20240088140
- Publication date Mar 14, 2024
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER
- Publication number 20240088277
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming SiGe Channel
- Publication number 20240072168
- Publication date Feb 29, 2024
- Shanghai Huali Integrated Circuit Corporation
- Xinhua Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20240047272
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- I-MING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240038863
- Publication date Feb 1, 2024
- Samsung Electronics Co., Ltd.
- Ho Kyun An
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20240030306
- Publication date Jan 25, 2024
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A METAL SILICATE FILM ON A SUBSTRATE IN A REACT...
- Publication number 20240030296
- Publication date Jan 25, 2024
- ASM IP HOLDING B.V.
- Fu Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240030287
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Choeun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY
- Publication number 20230420456
- Publication date Dec 28, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20230420518
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- GYEOM KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...
- Publication number 20230420457
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230420519
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- Da Hye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230411218
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHODS OF FORMATION
- Publication number 20230411456
- Publication date Dec 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shahaji B. MORE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES USING A SELF-ALI...
- Publication number 20230395433
- Publication date Dec 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating Semiconductor Structure Having Enhanced Hole...
- Publication number 20230395705
- Publication date Dec 7, 2023
- Institute of Semiconductors, Chinese Academy of Sciences
- Junwei LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-SPEED LIGHT SENSING APPARATUS
- Publication number 20230393248
- Publication date Dec 7, 2023
- Artilux, Inc.
- Yun-Chung Na
- G01 - MEASURING TESTING
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20230395661
- Publication date Dec 7, 2023
- Samsung Electronics Co., Ltd. Suwon-si
- Sumin YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL
- Publication number 20230386859
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ya-Wen Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES
- Publication number 20230386913
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Wei Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF
- Publication number 20230387210
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Lin CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE DEVICE AND RELATED METHODS
- Publication number 20230378365
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Hao LIN
- H01 - BASIC ELECTRIC ELEMENTS

including two or more of the elements provided for in group H01L29/16

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method for semiconductor laminated film, and semicond...

FinFET channel on oxide structures and related methods

Dual threshold voltage (VT) channel devices and their methods of fa...

Lateral bipolar transistor

Integrated circuit with a fin and gate structure and method making...

Semiconductor device

Semiconductor devices including protruding insulation portions betw...

Multi-gate device and related methods

Power reduction in finFET structures

Integrated circuit device

Semiconductor device

Micro-sensor for detecting chemical species and associated manufact...

Semiconductor device having asymmetrical source/drain

Method for forming fin field effect transistor (FinFET) device stru...

Fin loss prevention

Semiconductor structure having logic cells with multiple cell heights

Semiconductor devices and manufacturing methods thereof

Integrated circuit and static random access memory thereof

Method of manufacturing a semiconductor device and a semiconductor...

Forming a sacrificial liner for dual channel devices

Mid-processing removal of semiconductor fins during fabrication of...

Structure and method for SRAM FinFET device having an oxide feature

Tri-layer STI liner for nanosheet leakage control

Non-planar integrated circuit structures having mitigated source or...

Gate induced drain leakage reduction in FinFETs

FinFET device and method of forming

Melt anneal source and drain regions

Wrap-around contact on FinFET

Method for forming fin field effect transistor (FinFET) device stru...

Different source/drain profiles for n-type FinFETs and p-type FinFETs

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR...

INTEGRATED CIRCUIT DEVICES AND FABRICATION TECHNIQUES

SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRU...

SEMICONDUCTOR DEVICES

NON-PLANAR INTEGRATED CIRCUIT STRUCTURES HAVING MITIGATED SOURCE OR...

GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS

Fin Loss Prevention

MELT ANNEAL SOURCE AND DRAIN REGIONS

HEIGHT CONTROL IN NANOSHEET DEVICES

FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER

Method for Forming SiGe Channel

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

METHODS FOR FORMING A METAL SILICATE FILM ON A SUBSTRATE IN A REACT...

SEMICONDUCTOR DEVICES

SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY

INTEGRATED CIRCUIT DEVICE

SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...

SEMICONDUCTOR DEVICES

FINFET DEVICES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHODS OF FORMATION

METHOD FOR FORMING EPITAXIAL SOURCE/DRAIN FEATURES USING A SELF-ALI...

Method for Fabricating Semiconductor Structure Having Enhanced Hole...

HIGH-SPEED LIGHT SENSING APPARATUS

INTEGRATED CIRCUIT DEVICE

NITRIDE-CONTAINING STI LINER FOR SIGE CHANNEL

SOURCE/DRAIN CONTACT FORMATION METHODS AND DEVICES

SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF

MULTI-GATE DEVICE AND RELATED METHODS