introducing impurities in trench side or bottom walls

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H01L21/76237

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76237introducing impurities in trench side or bottom walls

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor storage device
- Patent number 11,955,372
- Issue date Apr 9, 2024
- Kioxia Corporation
- Takehiro Nakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial layer profile
- Patent number 11,942,547
- Issue date Mar 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method thereof
- Patent number 11,935,780
- Issue date Mar 19, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,923,205
- Issue date Mar 5, 2024
- United Microelectronics Corporation
- Kun-Ju Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench insulation structure with enlarged electrically conductive s...
- Patent number 11,916,104
- Issue date Feb 27, 2024
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Ralf Lerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced ESR in trench capacitor
- Patent number 11,888,021
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench isolation layer and method of...
- Patent number 11,854,864
- Issue date Dec 26, 2023
- Samsung Electronics Co., Ltd.
- Juyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structure
- Patent number 11,848,353
- Issue date Dec 19, 2023
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor structure
- Patent number 11,830,762
- Issue date Nov 28, 2023
- NANYA TECHNOLOGY CORPORATION
- Chen-Hao Lien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for passivating full front-side deep trench isolation structure
- Patent number 11,769,779
- Issue date Sep 26, 2023
- OmniVision Technologies, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased isolation breakdown voltage
- Patent number 11,756,992
- Issue date Sep 12, 2023
- KEY FOUNDRY CO., LTD.
- Yon Sup Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mechanism for FinFET well doping
- Patent number 11,742,237
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench isolation with segmented deep trench
- Patent number 11,626,317
- Issue date Apr 11, 2023
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 11,615,989
- Issue date Mar 28, 2023
- KEY FOUNDRY CO., LTD.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,587,823
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for improving radiation hardness and eliminating latch-u...
- Patent number 11,587,822
- Issue date Feb 21, 2023
- Silicon Space Technology Corporation
- David R. Gifford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,521,892
- Issue date Dec 6, 2022
- NANYA TECHNOLOGY CORPORATION
- Ping Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and fabrication method thereof
- Patent number 11,502,163
- Issue date Nov 15, 2022
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxial layer profile
- Patent number 11,462,642
- Issue date Oct 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure for IC with epi regions sharing the same tank
- Patent number 11,444,075
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,424,325
- Issue date Aug 23, 2022
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,374,046
- Issue date Jun 28, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Sheng-Chan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 11,367,661
- Issue date Jun 21, 2022
- KEY FOUNDRY CO., LTD.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench insulation structure with enlarged electrically conductive s...
- Patent number 11,355,582
- Issue date Jun 7, 2022
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Ralf Lerner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Homogeneous densification of fill layers for controlled reveal of v...
- Patent number 11,342,230
- Issue date May 24, 2022
- Tessera, Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor component and man...
- Patent number 11,227,948
- Issue date Jan 18, 2022
- CSMC Technologies FAB2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench isolation layer and method of...
- Patent number 11,211,284
- Issue date Dec 28, 2021
- Samsung Electronics Co., Ltd.
- Juyeon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatuses including a boundary of a well beneath an a...
- Patent number 11,211,382
- Issue date Dec 28, 2021
- Micron Technology, Inc.
- Michael Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Masking a zone at the edge of a donor substrate during an ion impla...
- Patent number 11,189,519
- Issue date Nov 30, 2021
- Soitec
- Séverin Rouchier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-depth regions of high resistivity in a semiconductor substrate
- Patent number 11,158,535
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...
- Publication number 20240145293
- Publication date May 2, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Hao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED ESR IN TRENCH CAPACITOR
- Publication number 20240120368
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Jing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...
- Publication number 20240072160
- Publication date Feb 29, 2024
- Monolithic Power Systems, Inc.
- Haifeng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE
- Publication number 20240047265
- Publication date Feb 8, 2024
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230402454
- Publication date Dec 14, 2023
- Samsung Electronics Co., Ltd.
- Dongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INCREASED ISOLATION BREAKDOWN VOLTAGE
- Publication number 20230369391
- Publication date Nov 16, 2023
- KEY FOUNDRY CO., LTD.
- Yon Sup PANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mechanism for FinFET Well Doping
- Publication number 20230343634
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING OF THE SAME
- Publication number 20230290846
- Publication date Sep 14, 2023
- SK HYNIX INC.
- Jun Sik KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DEEP TRENCH STRUCTURE AND METHOD OF MAN...
- Publication number 20230207394
- Publication date Jun 29, 2023
- KEY FOUNDRY CO., LTD.
- Yang Beom KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230197467
- Publication date Jun 22, 2023
- UNITED MICROELECTRONICS CORPORATION
- KUN-JU LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20230187266
- Publication date Jun 15, 2023
- NANYA TECHNOLOGY CORPORATION
- CHEN-HAO LIEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20230141995
- Publication date May 11, 2023
- NANYA TECHNOLOGY CORPORATION
- Chuan-Lin HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK
- Publication number 20220392886
- Publication date Dec 8, 2022
- TEXAS INSTRUMENTS INCORPORATED
- HENRY LITZMANN EDWARDS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODE STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MANUFACTURING MET...
- Publication number 20220384430
- Publication date Dec 1, 2022
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Yicheng Du
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Device and Method
- Publication number 20220359270
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
SOURCE/DRAIN EPITAXIAL LAYER PROFILE
- Publication number 20220359751
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Gulbagh SINGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE
- Publication number 20220319909
- Publication date Oct 6, 2022
- NANYA TECHNOLOGY CORPORATION
- CHING-LIANG KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220320155
- Publication date Oct 6, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- SHENG-CHAN LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench insulation structure with enlarged electrically conductive s...
- Publication number 20220293728
- Publication date Sep 15, 2022
- X-FAB SEMICONDUCTOR FOUNDRIES GmbH
- Ralf LERNER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DEEP TRENCH STRUCTURE AND METHOD OF MAN...
- Publication number 20220270932
- Publication date Aug 25, 2022
- KEY FOUNDRY CO., LTD.
- Yang Beom KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF
- Publication number 20220223704
- Publication date Jul 14, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Chengfang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20220199460
- Publication date Jun 23, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Pengchong LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE
- Publication number 20220148910
- Publication date May 12, 2022
- KIOXIA Corporation
- Takehiro NAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH
- Publication number 20220130717
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE
- Publication number 20220102484
- Publication date Mar 31, 2022
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20220102196
- Publication date Mar 31, 2022
- NANYA TECHNOLOGY CORPORATION
- Ying-Cheng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH ISOLATION LAYER AND METHOD OF...
- Publication number 20220084873
- Publication date Mar 17, 2022
- Samsung Electronics Co., Ltd.
- JUYEON KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20220044961
- Publication date Feb 10, 2022
- Changxin Memory Technologies, Inc.
- Bingyu ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20220037197
- Publication date Feb 3, 2022
- NANYA TECHNOLOGY CORPORATION
- Ying-Cheng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20210407848
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.,
- Han-Jong Chia
- G11 - INFORMATION STORAGE

introducing impurities in trench side or bottom walls

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor storage device

Source/drain epitaxial layer profile

Semiconductor structure and manufacturing method thereof

Method for manufacturing semiconductor device

Trench insulation structure with enlarged electrically conductive s...

Reduced ESR in trench capacitor

Semiconductor device including trench isolation layer and method of...

Method of fabricating semiconductor structure

Method of manufacturing semiconductor structure

Method for passivating full front-side deep trench isolation structure

Semiconductor device with increased isolation breakdown voltage

Mechanism for FinFET well doping

Deep trench isolation with segmented deep trench

Semiconductor device having deep trench structure and method of man...

Three-dimensional memory device and method

Structures for improving radiation hardness and eliminating latch-u...

Method for fabricating a semiconductor device

Semiconductor structure and fabrication method thereof

Source/drain epitaxial layer profile

Isolation structure for IC with epi regions sharing the same tank

Silicon carbide semiconductor device and method of manufacturing si...

Semiconductor structure and method of manufacturing the same

Semiconductor device having deep trench structure and method of man...

Trench insulation structure with enlarged electrically conductive s...

Homogeneous densification of fill layers for controlled reveal of v...

Lateral double-diffused metal oxide semiconductor component and man...

Semiconductor device including trench isolation layer and method of...

Methods and apparatuses including a boundary of a well beneath an a...

Masking a zone at the edge of a donor substrate during an ion impla...

Multi-depth regions of high resistivity in a semiconductor substrate

Patents Applicationslast 30 patents

MERGED TRENCHES SURROUNDED BY WIDER TRENCH FOR ISOLATING SEMICONDUC...

REDUCED ESR IN TRENCH CAPACITOR

SEMICONDUCTOR DEVICE WITH TRENCH STRUCTURES AND METHOD FOR MANUFACT...

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE WITH INCREASED ISOLATION BREAKDOWN VOLTAGE

Mechanism for FinFET Well Doping

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING OF THE SAME

SEMICONDUCTOR DEVICE HAVING DEEP TRENCH STRUCTURE AND METHOD OF MAN...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

ISOLATION STRUCTURE FOR IC WITH EPI REGIONS SHARING THE SAME TANK

ELECTRODE STRUCTURE, SEMICONDUCTOR STRUCTURE, AND MANUFACTURING MET...

Three-Dimensional Memory Device and Method

SOURCE/DRAIN EPITAXIAL LAYER PROFILE

METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Trench insulation structure with enlarged electrically conductive s...

SEMICONDUCTOR DEVICE HAVING DEEP TRENCH STRUCTURE AND METHOD OF MAN...

SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR STORAGE DEVICE

DEEP TRENCH ISOLATION WITH SEGMENTED DEEP TRENCH

METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING TRENCH ISOLATION LAYER AND METHOD OF...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD