isolation region manufacturing related aspects

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H01L21/823878

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/823878isolation region manufacturing related aspects

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and method for forming the same
- Patent number 12,224,348
- Issue date Feb 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor device and method of fabricating th...
- Patent number 12,218,133
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Sungil Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor device
- Patent number 12,218,224
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,218,129
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Chen Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,210
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Shih-Cheng Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,752
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seam free isolation structures and method for making the same
- Patent number 12,199,097
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device integration with separated fin-like field effect...
- Patent number 12,199,100
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architecture having gate contacts
- Patent number 12,199,101
- Issue date Jan 14, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plugs for interconnect lines for advanced integrated circuit struct...
- Patent number 12,199,168
- Issue date Jan 14, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual channel gate all around transistor device and fabrication meth...
- Patent number 12,198,986
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Sheng Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor method and device
- Patent number 12,191,212
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Cheng Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,191,144
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Yi Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,191,209
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and methods of formation
- Patent number 12,183,640
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,183,741
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Sungmin Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain feature separation structure
- Patent number 12,178,032
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Chun Keng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling fin-thinning through feedback
- Patent number 12,176,422
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsu-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked semiconductor device with nanostructure channels
- Patent number 12,170,227
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Te Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,170,281
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Sun Ki Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming bottom dielectric isolation layers
- Patent number 12,170,230
- Issue date Dec 17, 2024
- Applied Materials, Inc.
- SanKuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and methods thereof
- Patent number 12,166,104
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation layers in stacked semiconductor devices
- Patent number 12,166,037
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Lun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with buried power rail, integrated circuit...
- Patent number 12,165,927
- Issue date Dec 10, 2024
- Mediatek Inc.
- Po-Chao Tsao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for semiconductor device and method
- Patent number 12,166,078
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,159,870
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hung-Shu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fin structures and methods of forming same
- Patent number 12,154,822
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250056877
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...
- Publication number 20250056783
- Publication date Feb 13, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLING FIN-THINNING THROUGH FEEDBACK
- Publication number 20250056823
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsu-Hui Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS
- Publication number 20250056871
- Publication date Feb 13, 2025
- Applied Materials, Inc.
- San-Kuei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250056893
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048704
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Chih CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250048689
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Yin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AN...
- Publication number 20250048716
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yen Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVI...
- Publication number 20250048718
- Publication date Feb 6, 2025
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20250048728
- Publication date Feb 6, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- FEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...
- Publication number 20250048611
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One-Time Programming Memory Device with Backside Isolation Structure
- Publication number 20250048686
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE
- Publication number 20250038071
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Cheng TZENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME
- Publication number 20250031435
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION BETWEEN DEVICE AREAS
- Publication number 20250022746
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Ging Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS
- Publication number 20250022881
- Publication date Jan 16, 2025
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Publication number 20250022936
- Publication date Jan 16, 2025
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
- Publication number 20250014947
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kenichi Sano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250014948
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Fu-Jung Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL
- Publication number 20250006736
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Biswanath Senapati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250006500
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ya-Lan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...
- Publication number 20250006739
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Cheng-Ming Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION
- Publication number 20250006788
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240429278
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting PAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...
- Publication number 20240429300
- Publication date Dec 26, 2024
- QUALCOMM Incorporated
- Shreesh Narasimha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT CELLS HAVING POWER STUBS
- Publication number 20240429167
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi CHEN
- H01 - BASIC ELECTRIC ELEMENTS

isolation region manufacturing related aspects

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device structure and method for forming the same

Three-dimensional semiconductor device and method of fabricating th...

Method of manufacturing semiconductor devices with multiple silicid...

Method for forming semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device

FinFET device and method of forming same

Field effect transistors comprising a matrix of gate-all-around cha...

Seam free isolation structures and method for making the same

Multi-gate device integration with separated fin-like field effect...

Self-aligned gate endcap (SAGE) architecture having gate contacts

Gate line plug structures for advanced integrated circuit structure...

Plugs for interconnect lines for advanced integrated circuit struct...

Dual channel gate all around transistor device and fabrication meth...

Semiconductor method and device

Semiconductor device and manufacturing method thereof

Semiconductor device

Semiconductor device and methods of formation

Semiconductor device

Source/drain feature separation structure

Controlling fin-thinning through feedback

Stacked semiconductor device with nanostructure channels

Semiconductor device and method of fabricating the same

Methods of forming bottom dielectric isolation layers

Gate structure and methods thereof

Isolation layers in stacked semiconductor devices

Semiconductor structure with buried power rail, integrated circuit...

Contact structure for semiconductor device and method

Semiconductor structure and forming method thereof

Dummy fin structures and methods of forming same

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR FIN WITH DIVOTS, TRANSISTOR INCLUDING THE SEMICONDUCT...

CONTROLLING FIN-THINNING THROUGH FEEDBACK

METHODS OF FORMING BOTTOM DIELECTRIC ISOLATION LAYERS

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR MANUFACTURING THE...

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AN...

METHOD FOR MAKING COMPLEMENTARY FIELD EFFECT TRANSISTOR (CFET) DEVI...

SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE WITH GATE-CUT STRUCTURE AND FABRICATION METHOD...

One-Time Programming Memory Device with Backside Isolation Structure

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

INTEGRATED CIRCUIT WITH INTERNAL CONNECTION STRUCTURE

STACKED TRANSISTOR ISOLATION FEATURES AND METHODS OF FORMING THE SAME

ISOLATION BETWEEN DEVICE AREAS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

STACKED NANOSHEET FETS WITH GATE DIELECTRIC FILL

SEMICONDUCTOR DEVICE AND METHOD

COMPLEMENTARY FIELD-EFFECT TRANSISTOR DEVICES AND METHODS OF FORMIN...

NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR (FET) DEVICE HAVING F...

CIRCUIT CELLS HAVING POWER STUBS