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H01L29/0642

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0642Isolation within the component

Industries

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 12,170,313
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,154,980
- Issue date Nov 26, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced etching technologies for straight, tall and uniform fins a...
- Patent number 12,131,912
- Issue date Oct 29, 2024
- Intel Corporation
- Muralidhar S. Ambati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,135
- Issue date Oct 1, 2024
- Samsung Electronics Co., Ltd.
- Jung Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and preparation method thereof
- Patent number 12,068,202
- Issue date Aug 20, 2024
- Huawei Technologies Co., Ltd.
- Sunhom Steve Paak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an undoped region under a source/drain
- Patent number 12,068,395
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porogen bonded gap filling material in semiconductor manufacturing
- Patent number 11,984,316
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for forming the same
- Patent number 11,955,541
- Issue date Apr 9, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,948,844
- Issue date Apr 2, 2024
- Samsung Electronics Co., Ltd.
- Yong-Ho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for JFET with implant isolation
- Patent number 11,929,440
- Issue date Mar 12, 2024
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-phase inverter power chip and preparation method therefor
- Patent number 11,901,840
- Issue date Feb 13, 2024
- Gree Electric Appliances, Inc. of Zhuhai
- Daokun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices and methods of fabricating such devices
- Patent number 11,894,376
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Dae-Won Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation and/or protection structures
- Patent number 11,887,945
- Issue date Jan 30, 2024
- Wolfspeed, Inc.
- Lei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced etching technologies for straight, tall and uniform fins a...
- Patent number 11,875,999
- Issue date Jan 16, 2024
- Intel Corporation
- Muralidhar S. Ambati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 11,869,800
- Issue date Jan 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,862,677
- Issue date Jan 2, 2024
- Kabushiki Kaisha Toshiba
- Takeshi Suwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of p-channel and n-channel E-FET III-V devices without...
- Patent number 11,843,047
- Issue date Dec 12, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 11,804,490
- Issue date Oct 31, 2023
- Samsung Electronics Co., Ltd.
- Joong Gun Oh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a transistor
- Patent number 11,804,521
- Issue date Oct 31, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with bent portions
- Patent number 11,784,255
- Issue date Oct 10, 2023
- Samsung Electronics Co., Ltd.
- Hyun-Kwan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with hybrid nanostructures
- Patent number 11,776,854
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Hsun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device comprising a transistor
- Patent number 11,776,995
- Issue date Oct 3, 2023
- STMicroelectronics (Crolles 2) SAS
- Alexis Gauthier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 11,764,267
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Chieh Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrates with a self-aligned buried polycrystalline layer
- Patent number 11,749,559
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure with collector on polycrystalline isol...
- Patent number 11,749,747
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including control logic structures, and related methods
- Patent number 11,742,344
- Issue date Aug 29, 2023
- Micron Technology, Inc.
- Kurt D. Beigel
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 11,728,410
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Jin A. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with buried trap rich isolation r...
- Patent number 11,721,719
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a high-voltage metal-oxide-semiconductor transis...
- Patent number 11,715,784
- Issue date Aug 1, 2023
- United Microelectronics Corp.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid diffusion break with EUV gate patterning
- Patent number 11,710,768
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN
- Publication number 20240363729
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
- Meng-Ku Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
metal-oxide-semiconductor transistor and complementary metal-oxide-...
- Publication number 20240304624
- Publication date Sep 12, 2024
- Invention And Collaboration Laboratory, Inc.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...
- Publication number 20240282852
- Publication date Aug 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20240274725
- Publication date Aug 15, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...
- Publication number 20240250120
- Publication date Jul 25, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani PANDEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...
- Publication number 20240234137
- Publication date Jul 11, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240222425
- Publication date Jul 4, 2024
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240213361
- Publication date Jun 27, 2024
- UNITED MICROELECTRONICS CORP.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE TRANSISTOR WITH A ROBUST GATE AND METHOD
- Publication number 20240204090
- Publication date Jun 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BREAK STRUCTURE FOR TRANSISTORS
- Publication number 20240204042
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A TERMINATION REGION WITH DEEP TRENCH I...
- Publication number 20240204043
- Publication date Jun 20, 2024
- Monolithic Power Systems, Inc.
- Ignacio Cortes Mayol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...
- Publication number 20240136177
- Publication date Apr 25, 2024
- KYOCERA CORPORATION
- Takeshi KAMIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120413
- Publication date Apr 11, 2024
- Fuji Electric Co., Ltd.
- Yosuke SAKURAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS A...
- Publication number 20240120206
- Publication date Apr 11, 2024
- Intel Corporation
- Muralidhar S. AMBATI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240113195
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Ni YU
- B82 - NANO-TECHNOLOGY
Information Patent Application
TVS WITH ENHANCED REPETITIVE SURGE PERFORMANCE
- Publication number 20240096869
- Publication date Mar 21, 2024
- Littelfuse Semiconductor (Wuxi) Co., Ltd
- Lei Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240072111
- Publication date Feb 29, 2024
- Kabushiki Kaisha Toshiba
- Takeshi SUWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240055432
- Publication date Feb 15, 2024
- Samsung Electronics Co., Ltd.
- Joong Gun OH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240047558
- Publication date Feb 8, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Chao LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240014209
- Publication date Jan 11, 2024
- Samsung Electronics Co., Ltd.
- Gyu-Hwan Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement High Electron Mobility Transistor and Manufacturing Met...
- Publication number 20230420498
- Publication date Dec 28, 2023
- RICHTEK TECHNOLOGY CORPORATION
- Han-Chung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230377942
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE CUTTING PROCESS
- Publication number 20230352345
- Publication date Nov 2, 2023
- Taiwan Semiconductor Manufacturing Co., LTD
- I-Wen Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE ISOLATION STRUCTURE AND METHOD
- Publication number 20230335582
- Publication date Oct 19, 2023
- Micron Technology, Inc.
- Shivani Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...
- Publication number 20230299132
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Porogen Bonded Gap Filling Material In Semiconductor Manufacturing
- Publication number 20230299003
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...
- Publication number 20230223463
- Publication date Jul 13, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION
- Publication number 20230215958
- Publication date Jul 6, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL POWER SEMICONDUCTOR DEVICE
- Publication number 20230178592
- Publication date Jun 8, 2023
- NEXPERIA B.V.
- Stefano Dalcanale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20230147426
- Publication date May 11, 2023
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun CHOU
- H01 - BASIC ELECTRIC ELEMENTS

Isolation within the component

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Heterojunction bipolar transistor with buried trap rich isolation r...

Nitride-based semiconductor device and method for manufacturing the...

Advanced etching technologies for straight, tall and uniform fins a...

Semiconductor device

Integrated circuit device and preparation method thereof

Method for forming an undoped region under a source/drain

Porogen bonded gap filling material in semiconductor manufacturing

Semiconductor device and method for forming the same

Semiconductor device and method of fabricating the same

Fabrication method for JFET with implant isolation

Three-phase inverter power chip and preparation method therefor

Integrated circuit devices and methods of fabricating such devices

Semiconductor device with isolation and/or protection structures

Advanced etching technologies for straight, tall and uniform fins a...

Method for fabricating a semiconductor device

Semiconductor device

Integration of p-channel and n-channel E-FET III-V devices without...

Method for fabricating semiconductor device

Device comprising a transistor

Semiconductor devices with bent portions

Semiconductor structure with hybrid nanostructures

Device comprising a transistor

Semiconductor device and fabricating method thereof

Bulk substrates with a self-aligned buried polycrystalline layer

Bipolar transistor structure with collector on polycrystalline isol...

Devices including control logic structures, and related methods

Semiconductor device

Heterojunction bipolar transistor with buried trap rich isolation r...

Method for forming a high-voltage metal-oxide-semiconductor transis...

Hybrid diffusion break with EUV gate patterning

Patents Applicationslast 30 patents

METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN

metal-oxide-semiconductor transistor and complementary metal-oxide-...

SEMICONDUCTOR STRUCTURE WITH DEVICE INCLUDING AT LEAST ONE IN-WELL...

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACE...

SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

ENHANCEMENT MODE TRANSISTOR WITH A ROBUST GATE AND METHOD

DIFFUSION BREAK STRUCTURE FOR TRANSISTORS

SEMICONDUCTOR DEVICE HAVING A TERMINATION REGION WITH DEEP TRENCH I...

SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD AND MANUFACTURING...

SEMICONDUCTOR DEVICE

ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS A...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

TVS WITH ENHANCED REPETITIVE SURGE PERFORMANCE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICES

Enhancement High Electron Mobility Transistor and Manufacturing Met...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

METAL GATE STRUCTURE CUTTING PROCESS

MEMORY DEVICE ISOLATION STRUCTURE AND METHOD

HETEROJUNCTION BIPOLAR TRANSISTOR WITH BURIED TRAP RICH ISOLATION R...

Porogen Bonded Gap Filling Material In Semiconductor Manufacturing

BIPOLAR TRANSISTOR STRUCTURE WITH COLLECTOR ON POLYCRYSTALLINE ISOL...

FABRICATION METHOD FOR JFET WITH IMPLANT ISOLATION

LATERAL POWER SEMICONDUCTOR DEVICE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...