Lateral DMOS transistors

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H01L29/66681

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66681Lateral DMOS transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Network device having transistors employing charge-carrier mobility...
- Patent number 12,261,216
- Issue date Mar 25, 2025
- MARVELL ASIA PTE. LTD.
- Ricky Yuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field plate structure for high voltage device
- Patent number 12,249,629
- Issue date Mar 11, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Cheng Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor device and manufacturi...
- Patent number 12,249,645
- Issue date Mar 11, 2025
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Zhili Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...
- Patent number 12,243,939
- Issue date Mar 4, 2025
- Texas Instruments Incorporated
- Gang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with enhanced safe operating area and method of manufacture
- Patent number 12,237,413
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Lianjie Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 12,230,693
- Issue date Feb 18, 2025
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and poly gate
- Patent number 12,217,975
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,218,189
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused MOS device
- Patent number 12,211,909
- Issue date Jan 28, 2025
- NuVolta Technologies (Hefei) Co., Ltd.
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 12,211,934
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor and method for fabricating the same
- Patent number 12,205,995
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Ling-Gang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for preparation thereof
- Patent number 12,205,996
- Issue date Jan 21, 2025
- CSMC Technologies FAB2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 12,199,181
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 12,183,639
- Issue date Dec 31, 2024
- SK keyfoundry Inc.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a laterally-diffused metal-oxide-semiconductor trans...
- Patent number 12,176,395
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lwin Min Kyaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOSFET device with improved breakdown voltage
- Patent number 12,170,329
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 12,166,121
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a semiconductor layer within a trench a...
- Patent number 12,166,068
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Ralph N. Wall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and method for manufacturing the same
- Patent number 12,166,091
- Issue date Dec 10, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 12,159,815
- Issue date Dec 3, 2024
- Silanna Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor device and manufa...
- Patent number 12,154,983
- Issue date Nov 26, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,154,984
- Issue date Nov 26, 2024
- DB HiTek, Co., Ltd.
- Jun Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused field-effect transistor
- Patent number 12,154,972
- Issue date Nov 26, 2024
- NEXCHIP SEMICONDUCTOR CORPORATION
- Menghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device comprising a combined junction te...
- Patent number 12,148,793
- Issue date Nov 19, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seal method to integrate non-volatile memory (NVM) into logic or bi...
- Patent number 12,144,173
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Cheng-Bo Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,679
- Issue date Nov 12, 2024
- Renesas Electronics Corporation
- Makoto Koshimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device and manufacturing method thereof
- Patent number 12,136,650
- Issue date Nov 5, 2024
- Richtek Technology Corporation
- Chih-Wen Hsiung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS transistor having thick gate oxide and STI and method of fabri...
- Patent number 12,113,128
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY DRAIN-EXTENDED METAL-OXIDE-SEMICONDUCTOR (DEMOS) DEV...
- Publication number 20250056829
- Publication date Feb 13, 2025
- Zhejiang University
- Kai XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE
- Publication number 20250056835
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Bo SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...
- Publication number 20250056834
- Publication date Feb 13, 2025
- SOUTHEAST UNIVERSITY
- Long ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INT...
- Publication number 20250056833
- Publication date Feb 13, 2025
- QUALCOMM Incorporated
- Taehun KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040230
- Publication date Jan 30, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiajun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE
- Publication number 20250040179
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A DUAL-THICKN...
- Publication number 20250031432
- Publication date Jan 23, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Fangyue Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE IMPLEMENTED ON INSULATING OR SEMI-INSULATI...
- Publication number 20250031407
- Publication date Jan 23, 2025
- Korea Electrotechnology Research Institute
- Hyoung Woo KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FI...
- Publication number 20250022718
- Publication date Jan 16, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Huan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015146
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yotaro GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015179
- Publication date Jan 9, 2025
- United Microelectronics Corp.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER
- Publication number 20250006836
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jackson Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Performance LDMOS Structures
- Publication number 20240421225
- Publication date Dec 19, 2024
- MURATA MANUFACTURING CO., LTD.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240421166
- Publication date Dec 19, 2024
- RENESAS ELECTRONICS CORPORATION
- Makoto KOSHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240421198
- Publication date Dec 19, 2024
- Rohm Co., Ltd.
- Kunihiko Iwamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED BOOT DIODE WITH HIGH FORWARD BIAS CAPABILITY
- Publication number 20240405017
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240405123
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Ming KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF CONTROLLING BREAKDOWN VOLTAGE IN MICROELECTRONIC DEVICES
- Publication number 20240405066
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Gaurav Musalgaonkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPLANT P-TYPE AND/OR N-TYPE RINGS IN A SEMICONDUCTOR DEVICE
- Publication number 20240405124
- Publication date Dec 5, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Yu-Chun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED DRAIN
- Publication number 20240395868
- Publication date Nov 28, 2024
- NEXPERIA B.V.
- Shih-Hsuan Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395904
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER INTERFACE AND MANUFACTUR...
- Publication number 20240379842
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-YING LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...
- Publication number 20240379824
- Publication date Nov 14, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEVEL STRUCTURE AND ITS MANUFACTURING METHOD, LDMOS STRUCTURE AND I...
- Publication number 20240379823
- Publication date Nov 14, 2024
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Huan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED GATE ELECTRODE STRUCTURE
- Publication number 20240363748
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dhanoop Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH IMPROVED ISOLATION
- Publication number 20240363394
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE
- Publication number 20240363691
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LOW CONCENTRATION OPPOSITE TYPE DOPING DR...
- Publication number 20240363720
- Publication date Oct 31, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS TRANSISTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20240347626
- Publication date Oct 17, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- TSUNG-HUA YANG
- H01 - BASIC ELECTRIC ELEMENTS

Lateral DMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Network device having transistors employing charge-carrier mobility...

Field plate structure for high voltage device

Laterally diffused metal oxide semiconductor device and manufacturi...

Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...

LDMOS with enhanced safe operating area and method of manufacture

Semiconductor device and manufacturing method therefor

Semiconductor device having metal gate and poly gate

Semiconductor device and method for manufacturing the same

Lateral double diffused MOS device

Semiconductor structure and method for manufacturing the same

Semiconductor doped region with biased isolated members

High-voltage transistor and method for fabricating the same

LDMOS device and method for preparation thereof

LDMOS with polysilicon deep drain

Semiconductor structure and method for manufacturing the same

Semiconductor device having deep trench structure and method of man...

Structures for a laterally-diffused metal-oxide-semiconductor trans...

High voltage MOSFET device with improved breakdown voltage

Integrated circuit structure

Electronic device including a semiconductor layer within a trench a...

LDMOS transistor and method for manufacturing the same

Connection arrangements for integrated lateral diffusion field effe...

Lateral double-diffused metal oxide semiconductor device and manufa...

Semiconductor device and method for manufacturing same

Diffused field-effect transistor

High voltage semiconductor device comprising a combined junction te...

Seal method to integrate non-volatile memory (NVM) into logic or bi...

Semiconductor device

High voltage device and manufacturing method thereof

DMOS transistor having thick gate oxide and STI and method of fabri...

Patents Applicationslast 30 patents

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

HIGH-FREQUENCY DRAIN-EXTENDED METAL-OXIDE-SEMICONDUCTOR (DEMOS) DEV...

INTEGRATED CIRCUIT STRUCTURE

P-TYPE LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANU...

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INT...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE

EXTENDED-DRAIN METAL-OXIDE-SEMICONDUCTOR DEVICES WITH A DUAL-THICKN...

SIC SEMICONDUCTOR DEVICE IMPLEMENTED ON INSULATING OR SEMI-INSULATI...

ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER

High-Performance LDMOS Structures

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

INTEGRATED BOOT DIODE WITH HIGH FORWARD BIAS CAPABILITY

HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHODS OF CONTROLLING BREAKDOWN VOLTAGE IN MICROELECTRONIC DEVICES

METHOD TO IMPLANT P-TYPE AND/OR N-TYPE RINGS IN A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH ENHANCED DRAIN

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER INTERFACE AND MANUFACTUR...

METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...

BEVEL STRUCTURE AND ITS MANUFACTURING METHOD, LDMOS STRUCTURE AND I...

SEMICONDUCTOR DEVICES WITH SELECTIVELY DOPED GATE ELECTRODE STRUCTURE

INTEGRATED CIRCUIT WITH IMPROVED ISOLATION

WIDE BANDGAP MATERIAL IN DRIFT WELL OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH LOW CONCENTRATION OPPOSITE TYPE DOPING DR...

LDMOS TRANSISTOR DEVICE AND METHOD FOR FORMING THE SAME