Lateral isolation by refilling of trenches with dielectric material

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H01L21/76283

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Current Industry

H01L21/76283Lateral isolation by refilling of trenches with dielectric material

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Patents Grantslast 30 patents

Information Patent Grant
Profile of deep trench isolation structure for isolation of high-vo...
- Patent number 12,159,803
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ling Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation region fabrication for replacement gate processing
- Patent number RE50181
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Brent A. Anderson
Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 12,125,923
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC structure including porous semiconductor layer in bulk substrate...
- Patent number 12,119,352
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uzma B. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-function substrate
- Patent number 12,113,071
- Issue date Oct 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor feature and method for manufacturing the same
- Patent number 12,107,001
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufacturing method
- Patent number 12,080,606
- Issue date Sep 3, 2024
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Yan Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structures
- Patent number 12,074,057
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ta-Chun Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Structures and methods for reducing process charging damages
- Patent number 12,068,227
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor structure and semiconductor...
- Patent number 12,051,615
- Issue date Jul 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Mengzhu Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device of dielectric layer
- Patent number 12,034,075
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yu-Yun Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage capability of high voltage device
- Patent number 12,027,526
- Issue date Jul 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Chih Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and forming method thereof
- Patent number 12,020,980
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Soon-Kang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leave-behind protective layer having secondary purpose
- Patent number 11,996,408
- Issue date May 28, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,978,800
- Issue date May 7, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) semiconductor structures including...
- Patent number 11,978,740
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite structure, intended for a planar co-integration of electr...
- Patent number 11,955,375
- Issue date Apr 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Marilyne Roumanie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with boosted breakdown voltage
- Patent number 11,935,918
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for radiofrequency applications and related methods
- Patent number 11,923,239
- Issue date Mar 5, 2024
- Soitec
- Eric Desbonnets
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back side processing of integrated circuit structures to form insul...
- Patent number 11,894,262
- Issue date Feb 6, 2024
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric-filled trench isolation of vias
- Patent number 11,887,932
- Issue date Jan 30, 2024
- Intel Corporation
- Kemal Aygun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device
- Patent number 11,854,823
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing semiconductor device structure with multiple l...
- Patent number 11,842,921
- Issue date Dec 12, 2023
- NANYA TECHNOLOGY CORPORATION
- Yu-Han Hsueh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a deep trench isolation structure for isolation o...
- Patent number 11,830,765
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hung-Ling Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple thickness semiconductor-on-insulator field effect transist...
- Patent number 11,817,345
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with sidewall interconnection structure, metho...
- Patent number 11,810,902
- Issue date Nov 7, 2023
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor isolation structure and method of making the same
- Patent number 11,798,836
- Issue date Oct 24, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tsung-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet IC device with single diffusion break
- Patent number 11,791,199
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench shield isolation layer
- Patent number 11,791,198
- Issue date Oct 17, 2023
- Texas Instruments Incorporated
- Hong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure
- Patent number 11,791,222
- Issue date Oct 17, 2023
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MAKING SOI DEVICE FROM BULK SILICON SUBSTRATE AND SOI DEVICE
- Publication number 20240420993
- Publication date Dec 19, 2024
- Hangzhou HFC Semiconductor Co.
- Youming LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CHIP COMPRISING A RADIOFREQUENCY COMPONENT
- Publication number 20240404873
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF
- Publication number 20240395602
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Soon-Kang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacers for Semiconductor Devices Including Backside Power Rails
- Publication number 20240387249
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Li-Zhen Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE
- Publication number 20240387738
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Cheng CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHIP WITH GOOD THERMAL DISSIPATION PERFORMANCE
- Publication number 20240379486
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FEATURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240371681
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...
- Publication number 20240371943
- Publication date Nov 7, 2024
- ATOMERA INCORPORATED
- DONGHUN KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURES
- Publication number 20240363397
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Ta-Chun Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURES AND METHODS FOR REDUCING PROCESS CHARGING DAMAGES
- Publication number 20240363495
- Publication date Oct 31, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Kuan-Jung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FUNCTION SUBSTRATE
- Publication number 20240332306
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Eugene I-Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE OF DIELECTRIC LAYER
- Publication number 20240332419
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Yun PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE
- Publication number 20240321894
- Publication date Sep 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Chih CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE
- Publication number 20240250116
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) SEMICONDUCTOR STRUCTURES INCLUDING...
- Publication number 20240250089
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Harry-Hak-Lay CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20240250172
- Publication date Jul 25, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL CAPACITORS OF SEMICONDUCTOR DEVICES
- Publication number 20240234448
- Publication date Jul 11, 2024
- GLOBALFOUNDRIES U.S. Inc.
- DAVID PRITCHARD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION A...
- Publication number 20240178054
- Publication date May 30, 2024
- STMicroelectronics S.r.l
- Emanuele LAGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED STRUCTURE WITH TRAP RICH REGIONS AND LOW RESISTIVITY REG...
- Publication number 20240162232
- Publication date May 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR DEVICES AND INTEGRATION METHODS
- Publication number 20240128374
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT BACKSIDE SELF-ALIGNED CONTACT
- Publication number 20240128333
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH LATERALLY GRADED CHANNEL REGION
- Publication number 20240128322
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240105504
- Publication date Mar 28, 2024
- Vanguard International Semiconductor Corporation
- Chrong-Jung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structures And Methods Of Forming The Same
- Publication number 20240105707
- Publication date Mar 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Chiang Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTU...
- Publication number 20240088034
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR
- Publication number 20240071812
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Lei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE
- Publication number 20240047219
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240047460
- Publication date Feb 8, 2024
- Vanguard International Semiconductor Corporation
- Chih-Cherng Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240014067
- Publication date Jan 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Hiroyuki ARIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20240006532
- Publication date Jan 4, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS

Lateral isolation by refilling of trenches with dielectric material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Profile of deep trench isolation structure for isolation of high-vo...

Isolation region fabrication for replacement gate processing

High voltage diode on SOI substrate with trench-modified current path

IC structure including porous semiconductor layer in bulk substrate...

Multi-function substrate

Semiconductor feature and method for manufacturing the same

Semiconductor manufacturing method

Isolation structures

Structures and methods for reducing process charging damages

Method for manufacturing semiconductor structure and semiconductor...

Device of dielectric layer

Breakdown voltage capability of high voltage device

Semiconductor structure and forming method thereof

Leave-behind protective layer having secondary purpose

Strained semiconductor using elastic edge relaxation of a stressor...

Semiconductor-on-insulator (SOI) semiconductor structures including...

Composite structure, intended for a planar co-integration of electr...

High voltage device with boosted breakdown voltage

Structures for radiofrequency applications and related methods

Back side processing of integrated circuit structures to form insul...

Dielectric-filled trench isolation of vias

Integrated circuit device

Method for preparing semiconductor device structure with multiple l...

Method of forming a deep trench isolation structure for isolation o...

Multiple thickness semiconductor-on-insulator field effect transist...

Semiconductor device with sidewall interconnection structure, metho...

Semiconductor isolation structure and method of making the same

Nanosheet IC device with single diffusion break

Trench shield isolation layer

3D semiconductor device and structure

Patents Applicationslast 30 patents

METHOD OF MAKING SOI DEVICE FROM BULK SILICON SUBSTRATE AND SOI DEVICE

INTEGRATED CIRCUIT CHIP COMPRISING A RADIOFREQUENCY COMPONENT

SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF

Spacers for Semiconductor Devices Including Backside Power Rails

SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE

INTEGRATED CHIP WITH GOOD THERMAL DISSIPATION PERFORMANCE

SEMICONDUCTOR FEATURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES INCLUDING LOCALIZED SEMICONDUCTOR-ON-INSULATO...

ISOLATION STRUCTURES

STRUCTURES AND METHODS FOR REDUCING PROCESS CHARGING DAMAGES

MULTI-FUNCTION SUBSTRATE

DEVICE OF DIELECTRIC LAYER

BREAKDOWN VOLTAGE CAPABILITY OF HIGH VOLTAGE DEVICE

HIGH VOLTAGE DEVICE WITH BOOSTED BREAKDOWN VOLTAGE

SEMICONDUCTOR-ON-INSULATOR (SOI) SEMICONDUCTOR STRUCTURES INCLUDING...

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

LATERAL CAPACITORS OF SEMICONDUCTOR DEVICES

HIGH VOLTAGE SEMICONDUCTOR DEVICE HAVING A DEEP TRENCH INSULATION A...

INTEGRATED STRUCTURE WITH TRAP RICH REGIONS AND LOW RESISTIVITY REG...

METAL OXIDE SEMICONDUCTOR DEVICES AND INTEGRATION METHODS

DIRECT BACKSIDE SELF-ALIGNED CONTACT

DEVICE WITH LATERALLY GRADED CHANNEL REGION

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor Structures And Methods Of Forming The Same

GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTU...

EMBEDDED SOI STRUCTURE FOR LOW LEAKAGE MOS CAPACITOR

INTEGRATED CIRCUIT DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SOI WAFERS AND DEVICES WITH BURIED STRESSORS