Patent Application
20240371966
A boost converter circuit is intended to receive a low magnitude input voltage and transmit a higher magnitude output voltage. Because the boost converter circuit operates at high voltages, the components of the boost converter circuit are sufficiently robust to operate at high voltages. One component of a conventional boost converter circuit is a twin well diode. The twin well diode design is used to provide a higher breakdown voltage than a single well diode. The breakdown voltage is the voltage at which an element is damaged and no longer provides sufficient resistance to prevent current from passing through the element while the element is in an off state.
However, the design of the twin well diode forms a parasitic bipolar junction transistor (BJT) within the twin well diode. The parasitic BJT is formed between an epitaxially grown layer (epi-layer) having a first type of conductivity, a second well having a second type of conductivity and a first well having the first type of conductivity. For example, in a twin well diode having a p-type epi-layer and an n-type second well surrounding a p-type first well, the parasitic BJT is a P-N-P BJT. The parasitic BJT causes current leakage into the substrate which is electrically connected to a ground. In some instances, the current leakage is approximately 50%. The high current leakage significantly reduces the efficiency of the boost converter circuit, which limits the ability of the boost converter circuit to supply the desired power output.
One or more embodiments are illustrated by way of example, and not by limitation, in the figures of the accompanying drawings, wherein elements having the same reference numeral designations represent like elements throughout. It is emphasized that, in accordance with standard practice in the industry various features may not be drawn to scale and are used for illustration purposes only. In fact, the dimensions of the various features in the drawings may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course, merely examples and are not intended to be limiting.
Triple well isolated diode 102 further includes isolation features 118a-118d. Isolation feature 118a is formed in a surface of epi-layer 108 opposite substrate 104 between an outer portion 108a of epi-layer 108 surrounding sides of third well 116 and an upper portion of third well 116. Isolation feature 118b is formed in a surface of epi-layer 108 opposite substrate 104 between an upper portion of second well 112 and first well 110. Isolation feature 118c is formed in a surface of epi-layer 108 opposite substrate 104 between the upper portion of second well 112 and first well 110 on an opposite side of first well 110 from isolation feature 118b. Isolation feature 118d is formed in a surface of epi-layer 108 opposite substrate 104 between outer portion 108a of epi-layer 108 and the upper portion of third well 116 on an opposite side of third well 116 from isolation feature 118a. No isolation feature is formed between second well 112 and third well 116. In some embodiments, isolation features 118a-118d are shallow trench isolation (STI) features. In some embodiments, isolation features 118a-118d comprise local oxidation of silicon (LOCOS). In some embodiments, a depth of isolation features 118a-118d ranges from 0.2 μm to 0.5 μm.
Triple well isolated diode 102 further includes contact regions 120a-120g over epi-layer 108 and in electrical connection with first well 110, second well 112, third well 116 and outer portion 108a of epi-layer 108. Contact region 120a is formed over the first outer portion 108a of epi-layer 108 and has the first conductivity type. Contact region 120b is formed over the first portion of third well 116 and has the second conductivity type. Contact region 120c is formed over the first portion of second well 112 and has the first conductivity type. Contact region 120d is formed over first well 110 and has the second conductivity type. Contact region 120e is formed over the second portion of second well 112 and has the first conductivity type. Contact region 120f is formed over the second portion of third well 116 and has the second conductivity type. Contact region 120g is formed over the second outer portion 108b of epi-layer 108 and has the first conductivity type.
In addition to triple well isolated diode 102, boost converter circuit 100 includes an input voltage source Vin electrically connected to an inductor L. An output of inductor L is electrically connected to an anode 130. Anode 130 is electrically connected to contact regions 120b, 120c, 120e and 120f. Anode 130 is also electrically connected to one side of a transistor N. An opposite side of transistor N is electrically connected to a first side of a capacitor C. A gate of transistor N is electrically connected to a gate signal voltage source VG. A second side of capacitor C is electrically connected to a cathode 140. Cathode 140 is electrically connected to contact region 120d and is configured to provide an output voltage Vo to external elements. Contact regions 120a and 120g are electrically connected to a low voltage, i.e., a ground.
In some embodiments, substrate 104 is a semiconductor substrate. In some embodiments, substrate 104 comprises silicon, germanium, gallium nitride, or other suitable materials. In some embodiments, substrate 104 is lightly doped with either p-type or n-type dopants. When the conductivity type is p-type, suitable dopants include boron, aluminum, or other suitable p-type dopants. When the conductivity type is n-type, suitable dopants include phosphorous, arsenic, or other suitable n-type dopants. In some embodiments, the concentration of dopants in substrate 104 ranges from 1013 atoms/cm3 to 1016 atoms/cm3.
Buried layer 106 is formed by doping a portion of substrate 104 to have a conductivity type opposite substrate 104. Suitable dopants for buried layer 106 include dopants suitable for doping substrate 104 which have the opposite conductivity type. In some embodiments, the concentration of dopant in buried layer 106 ranges from 1018 atoms/cm3 to 1020 atoms/cm3. In some embodiments, buried layer is formed to a depth of 2 μm to 10 μm below a surface of substrate 104.
Epi-layer 108 is formed over buried layer 106 and substrate 104 and has the first conductivity type. Suitable dopants for epi-layer 108 include dopants suitable for doping substrate 104 which have the same conductivity type. In some embodiments, epi-layer 108 comprises a same material as substrate 104. In some embodiments, a dopant concentration in epi-layer 108 is higher than the dopant concentration in substrate 104. As the dopant concentration in epi-layer 108 increases a breakdown voltage of the device decreases. In some embodiments, epi-layer 108 is formed to a thickness ranging from 2 μm to 10 μm. In some embodiments, epi-layer 108 has a resistivity ranging from 5 ohm-cm to 200 ohm-cm. In some embodiments, epi-layer 108 has a dopant concentration ranging from 1013 atoms/cm3 to 1016 atoms/cm3.
First well 110 is formed in epi-layer 108 and has the second conductivity type. Suitable dopants for first well 10 includes dopants suitable for doping substrate 104 which have the opposite conductivity type. In some embodiments, a dopant concentration of first well 110 ranges from 1016 atoms/cm3 to 1018 atoms/cm3. In some embodiments, first well 110 has the same dopant concentration as buried layer 106. In some embodiments, first well 110 has a different dopant concentration from buried layer 106.
Second well 112 is formed in epi-layer 108 and has the first conductivity type. Suitable dopants for second well 112 include dopants suitable for doping substrate 104 which have the same conductivity type. Second well 112 surrounds the sides of first well 110. Portions of second well 112 below isolation features 118b and 118c are in electrical contact with first well 110. In some embodiments, a dopant concentration of second well 112 ranges from 1016 atoms/cm3 to 1018 atoms/cm3. In some embodiments, second well 112 has a higher dopant concentration than substrate 104 and epi-layer 108. In some embodiments, a portion of a bottom surface of second well 112 is in electrical contact with buried layer 106.
Deep well 114 is formed in epi-layer 108 and has the first conductivity type. Suitable dopants for deep well 114 include dopants suitable for doping substrate 104 which have the same conductivity type. Deep well 114 is formed between first well 110 and buried layer 106. Deep well 114 extends beneath first well 110 to electrically connect the first and second portions of second well 112, which surround the sides first well 110 by ion implantation. In some embodiments, a dopant concentration of deep well 114 ranges from 1015 atoms/cm3 to 1018 atoms/cm3. In some embodiments, deep well 114 has a dopant concentration higher than the dopant concentration of second well 112. In some embodiments, the dopant concentration of deep well 114 is lower than the dopant concentration of second well 112. In some embodiments, the dopant concentration of deep well 114 is the same as the dopant concentration of second well 112. In some embodiments, a bottom surface of deep well 114 is in electrical contact with buried layer 106. In some embodiments, deep well 114 does not extend to a bottom surface of epi-layer 108. In some embodiments, a thickness of deep well 114 ranges from 0.5 μm to 2 μm.
Third well 116 is formed in epi-layer 108 and has the second conductivity type. Suitable dopants for third well 116 include dopants suitable for doping substrate 104 which have the opposite conductivity type. Third well 116 surrounds the sides of second well 112 and deep well 114. Third well 116 is in electrical contact with second well 112 along an entire surface of third well 116 between second well 112 and third well 116. In some embodiments, a dopant concentration of third well 116 ranges from 1016 atoms/cm3 to 1018 atoms/cm3. Portions of third well 116 below isolation features 118a and 118d are in electrical contact with outer portion 108a of epi-layer 108. A bottom surface of third well 116 is in electrical contact with buried layer 106.
Contact regions 120a-120g are formed in epi-layer 108 between an exposed surface of epi-layer 108 and corresponding portions of the first well 110, second well 112, third well 116 and outer portion 108a of epi-layer 108. Contact regions 120a-120g have the same conductivity as the well or epi-layer over which the individual contact region is formed. Suitable dopants for contact regions 120a-120g include dopants suitable for doping substrate 104 which have the appropriate conductivity type. In some embodiments, a dopant concentration in contact regions 120a-120g ranges from 1019 atoms/cm3 to 1021 atoms/cm3. In some embodiments, all contact regions 120a-120g have the same dopant concentration. In some embodiments, all contact regions having the same conductivity type have the same dopant concentration. In some embodiments, contact regions 120a-120g independently have different dopant concentrations.
Contact regions 120a-120g electrically connect corresponding wells to electrical lines. Contact region 120a electrically connects the first portion 108a of epi-layer 108 to ground. Contact region 120b electrically connects the first portion of third well 116 to anode 130. Contact region 120b is separated from contact region 120a by isolation feature 118a. Contact region 120c connects the first portion of second well 112 to anode 130. Contact region 120c is in electrical contact with contact region 120b along an entire surface between contact region 120b and contact region 120c. Contact region 120d electrically connects first well 110 to cathode 140. Contact region 120d is separated from contact region 120c by isolation feature 118b. Contact region 120e electrically connects the second portion of second well 112 to anode 130. Contact region 120e is separated from contact region 120d by isolation feature 118c. Contact region 120f electrically connects the second portion of third well 116 to anode 130. Contact region 120f is in electrical contact with contact region 120e along an entire surface between contact region 120e and contact region 120f. Contact region 120g electrically connects the second portion 108b of epi-layer 108 to ground. Contact region 120g is separated from contact region 120f by isolation feature 118d.
Transistor N is configured to turn boost converter circuit 100 on and off based on gate signal voltage VG. Gate signal voltage VG is Supplied by a control circuit to activate or deactivate transistor N. When transistor N is activated, current flows between inductor L and capacitor C and through triple well isolated diode 102. When transistor N is deactivated, current does not flow between inductor L and capacitor C or through triple well isolated diode 102. In some embodiments, transistor N is a metal oxide semiconductor (MOS) transistor including either an n-type MOS (NMOS) or a p-type MOS (PMOS) transistor.
Triple well isolated diode 102 is capable of operating in either a forward direction, i.e., current flowing from inductor L to capacitor C, or in a reverse direction, i.e., current flowing from capacitor C to inductor L. When triple well isolated diode 102 is operating in a forward direction, the charge at capacitor C is 0 V. When triple well isolated diode 102 is operating in a reverse direction, the charge at capacitor C equals output voltage Vo.
Triple well isolated diode 102 has anode 130 positioned between a grounded portion of epi-layer 108 and cathode 140. This arrangement reduces the amount of substrate leakage current. In comparison to a conventional double well diode structure, triple well isolated diode 102 has a reduced parasitic bi-polar junction transistor (BJT). The parasitic BJT in a conventional twin well diode has a substrate current leakage of approximately 50%. In contrast, triple well isolated diode 102 exhibits a substrate current leakage significantly less than 1%. The low substrate current leakage of triple well isolated diode 102 reduces power consumption and increases the efficiency of boost converter circuit 100 versus the conventional twin well diode.
Further, the substrate current leakage of conventional twin well diodes increases exponentially above a turn on voltage of about 0.8V. The increase in substrate current leakage hampers the ability of conventional twin well diodes to tolerate power spikes during operation. Triple well isolated diode 102; however, maintains a substrate current leakage significantly less than 1% for turn on voltages up to at least 1.2V. The ability to maintain efficient operation in a wide range of turn on voltages enables the incorporation of triple well isolated diode 102 into circuitry without the need to provide additional circuitry to control the operating voltage. The ability to omit additional circuits to control the operating voltage reduces an area of an integrated circuit design.
Triple well isolated diode 102 also exhibits a high breakdown voltage. The breakdown voltage of triple well isolated diode 102 is greater than 55V. The high breakdown voltage enhances an ability of triple well isolated diode 102 to operate at high voltages resulting in the ability to produce an increased magnitude output voltage Vo.
In some embodiments, where boundary defining element 302 is the patterned photoresist layer, a photoresist layer is deposited over substrate 104 then patterned using a mask and a photolithography process. The patterned photoresist layer is then etched to form boundary defining element 302. In some embodiments, buried layer 106 is formed using an implantation process 304 to introduce dopants into a surface of substrate 104. Following implantation process 304, boundary defining element 302 is removed.
In some embodiments where boundary defining element 302 is the patterned photoresist layer, boundary defining element 302 is removed using plasma etching or ashing. Following the removal of boundary defining element 302, the surface of substrate 104 remains substantially flat.
In operation 204, epi-layer 108 is grown over substrate 104 and buried layer 106. Epi-layer 108 is grown using an epitaxial growth process. In some embodiments, epi-layer 108 is doped with a p-type dopant. In some embodiments, epi-layer 108 is doped by an ion implantation process. In some embodiments, epi-layer 108 is doped by including impurities in the epitaxial growth process.
In operation 206, isolation features 118a-118d are formed in epi-layer 108. In some embodiments, isolation features 118a-118d are STI or LOCOS features and are formed using conventional processes.
In operation 208, first well 110 is formed in epi-layer 108. In some embodiments, first well 110 is formed in epi-layer 108 using an implantation process. In some embodiments, first well 110 is formed in epi-layer 108 using an implantation mask. In some embodiments, first well 110 is formed in epi-layer 108 using a photoresist layer. In some embodiments, first well 110 is formed in epi-layer 108 by the same process used to form buried layer 106 in substrate 104. In some embodiments, first well 110 is formed in epi-layer by a different process than that used to form buried layer 106 in substrate 104. In some embodiments, first well 110 is formed in epi-layer 108 extending all the way to buried layer 106. In some embodiments, first well 110 is formed in epi-layer 108 stopping a certain distance above buried layer 106.
In operation 210, second well 112 is formed in epi-layer 108. Second well 112 is formed to a depth sufficient to electrically connect to buried layer 106. In some embodiments, second well 112 is formed in epi-layer 108 using an implantation process. In some embodiments, second well 112 has a same dopant concentration as epi-layer 108. In some embodiments, second well 112 is formed in epi-layer 108 using an implantation mask. In some embodiments, second well 112 is formed in epi-layer 108 using a photoresist layer. In some embodiments, second well 112 is formed in epi-layer 108 by the same process used to form first well 110 and buried layer 106. In some embodiments, second well 112 is formed in epi-layer 108 by a different process than that used to form at least one of first well 110 and buried layer 106.
In operation 212, third well 116 is formed in epi-layer 108. Third well 116 is formed to a depth sufficient to electrically connect to buried layer 106. Third well 116 is formed to be in electrical contact with second well 112 along the entire surface of third well 116 between second well 112 and third well 114. In some embodiments, third well 116 is formed in epi-layer 108 using an implantation process. In some embodiments, third well 116 is formed in epi-layer 108 using an implantation mask. In some embodiments, third well 116 is formed in epi-layer 108 using a photoresist layer. In some embodiments, third well 116 is formed in epi-layer 108 by the same process used to form second well 112, first well 110 and buried layer 106. In some embodiments, third well 116 is formed in epi-layer 108 by a different process than that used to form at least one of second well 112, first well 110 or buried layer 106.
In operation 214, deep well 114 is formed in epi-layer 108. Deep well 114 is formed below first well 110 and in electrical contact with buried layer 106. Deep well 114 is formed to electrically connect to second well 112 on both sides of first well 110. In some embodiments, deep well 114 is formed in epi-layer 108 using an implantation process. In some embodiments, an implantation energy used to form deep well 114 is about 1 MeV. Deep well 114 is formed using higher implantation energy than first well 110 to locate dopants at a greater depth than first well 110. In some embodiments, deep well 114 is formed in epi-layer 108 using an implantation mask. In some embodiments, deep well 114 is formed in epi-layer 108 using a photoresist layer. In some embodiments, deep well 114 is formed in epi-layer 108 by the same process used to form third well 116, second well 112, first well 110 or buried layer 106. In some embodiments, deep well 114 is formed in epi-layer 108 by a different process than that used to form at least one of third well 116, second well 112, first well 110 or buried layer 106.
In operation 216, contact regions 120a-120g are formed in epi-layer 108. Contact regions 120a-120g are formed to electrically connect to underlying wells. Contact regions 120b and 120c are formed in electrical contact with one another. Contact regions 120e and 120f are formed in electrical contact with one another. In some embodiments, contact regions 120a-120g are formed in epi-layer 108 using an implantation process. In some embodiments, contact regions 120a-120g are formed in epi-layer 108 using an implantation mask. In some embodiments, contact regions 120a-120g are formed in epi-layer 108 using a photoresist layer. In some embodiments, contact regions 120a-120g are formed in epi-layer 108 by the same process used to form deep well 114, third well 116, second well 112, first well 110 or buried layer 106. In some embodiments, contact regions 120a-120g are formed in epi-layer 108 by a different process than that used to form at least one of deep well 114, third well 116, second well 112, first well 110 or buried layer 106.
An aspect of this description relates to a method of making a triple well isolated diode. The method includes growing an epi-layer over a substrate. The method further includes forming a first isolation feature in the epi layer. The method further includes implanting a first well in the epi-layer. The method further includes implanting a second well in the epi-layer, wherein a first isolation feature separates a portion of the second well from a portion of the first well. The method further includes implanting a third well in the epi-layer, wherein a sidewall of third well contacts a sidewall of the second well. The method further includes implanting a deep well in the epi-layer, wherein the deep well extends beneath the first well, the deep well extends underneath a first portion of the second well, and a second portion of the second well extends beyond the deep well in a first direction parallel to a top surface of the substrate. In some embodiments, the method further includes forming a buried layer in the substrate. In some embodiments, implanting the second well comprises forming the second portion of the second well contacting the buried layer. In some embodiments, implanting the third well comprises implanting the third well in direct contact with the second portion of the second well. In some embodiments, implanting the third well comprises implanting the third well to a depth equal to a depth of the second portion of the second well. In some embodiments, implanting the second well comprises implanting the second well including an opposite dopant type from a dopant used in implanting the first well. In some embodiments, the method further includes doping the epi layer to define a first contact region over the first well. In some embodiments, the method further includes doping the epi layer to define a second contact region over the second well. In some embodiments, forming the first isolation feature comprises forming the first isolation feature between the first contact region and the second contact region.
An aspect of this description relates to a triple well isolated diode. The triple well isolated diode includes an epi-layer over a substrate. The triple well isolated diode includes a first well in the epi-layer, wherein the first well has a first conductivity type. The triple well isolated diode further includes a second well in the epi-layer and surrounding sides of the first well, wherein the second well has a second conductivity type opposite the first conductivity type. The triple well isolated diode further includes a first isolation feature between the first well and the second well. The triple well isolated diode further includes a third well in the epi-layer and surrounding sides of the second well, wherein the third well has the first conductivity type. The triple well isolated diode further includes a deep well in the epi-layer extending beneath the first well to electrically connect to the second well on opposite sides of the first well, wherein the first well directly contacts the deep well. The triple well isolated diode further includes a second isolation feature between the third well and an outer periphery of the epi-layer. In some embodiments, the triple well isolated diode further includes a buried layer in the substrate. In some embodiments, a first portion of the second well directly contacts the buried layer, and a second portion of the second well is separate from the buried layer by the deep well. In some embodiments, the second portion of the second well is in direct contact with the first well. In some embodiments, the triple well isolated diode further includes a first contact region over the first well; a second contact region over the second well; and a third contact region of the third well. In some embodiments, the second contact region and the third contact region are electrically connected to an anode. In some embodiments, the first contact region is electrically connected to a cathode. In some embodiments, the second contact region directly contacts the third contact region.
An aspect of this description relates to a triple well isolated diode. The triple well isolated diode includes an epi-layer over a substrate. The triple well isolated diode further includes a first well in the epi-layer, wherein the first well has a first conductivity type. The triple well isolated diode further includes a second well in the epi-layer, wherein the second well has a second conductivity type opposite the first conductivity type, and a first region of the first well directly contacts a first region of the second well. The triple well isolate diode further includes a first isolation feature, wherein the first isolation feature is between a second region of the first well and a second region of the second well. The triple well isolated diode further includes a third well in the epi-layer and surrounding the second well, wherein the third well has the first conductivity type. The triple well isolated diode further includes a deep well in the epi-layer extending beneath the first well, wherein the first well directly contacts a top surface of the deep well, and the second well directly contacts a sidewall of the deep well. In some embodiments, the triple well isolated diode further includes a buried layer in the substrate. In some embodiments, each of the second well, the third well and the deep well directly contact the buried layer.
It will be readily seen by one of ordinary skill in the art that the disclosed embodiments fulfill one or more of the advantages set forth above. After reading the foregoing specification, one of ordinary skill will be able to affect various changes, substitutions of equivalents and various other embodiments as broadly disclosed herein. It is therefore intended that the protection granted hereon be limited only by the definition contained in the appended claims and equivalents thereof.
The present application is a continuation of U.S. application Ser. No. 16/700,933, filed Dec. 2, 2019, which is a divisional of U.S. application Ser. No. 15/200,727, filed on Jul. 1, 2016, now U.S. Pat. No. 10,497,795, issued Dec. 3, 2019, which is a divisional of U.S. application Ser. No. 13/438,600, filed Apr. 3, 2012, now U.S. Pat. No. 9,391,159, issued Jul. 12, 2016, which are incorporated herein by reference in their entireties.
| Number | Date | Country | |
|---|---|---|---|
| Parent | 15200727 | Jul 2016 | US |
| Child | 16700933 | US | |
| Parent | 13438600 | Apr 2012 | US |
| Child | 15200727 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 16700933 | Dec 2019 | US |
| Child | 18771763 | US |
