made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy

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H01F10/3236

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Parent Industries

HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F10/00Thin magnetic films

Current Industry

H01F10/3236made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of and apparatus for measuring magnitude of magnetization of...
- Patent number 11,193,988
- Issue date Dec 7, 2021
- KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Kyoung-Woong Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic and spin logic devices based on Jahn-Teller materials
- Patent number 10,910,556
- Issue date Feb 2, 2021
- Intel Corporation
- Sasikanth Manipatruni
- G11 - INFORMATION STORAGE
Information Patent Grant
Alloy thin films exhibiting perpendicular magnetic anisotropy
- Patent number 10,903,416
- Issue date Jan 26, 2021
- Korea University Research and Business Foundation
- Young Keun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic detection circuit, MRAM and operation method thereof
- Patent number 10,868,079
- Issue date Dec 15, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer thin films exhibiting perpendicular magnetic anisotropy
- Patent number 10,858,730
- Issue date Dec 8, 2020
- Korea University Research and Business Foundation
- Young Keun Kim
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic detection circuit, MRAM and operation method thereof
- Patent number 10,672,832
- Issue date Jun 2, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ji-Feng Ying
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,658,572
- Issue date May 19, 2020
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-collinear magnetoresistive device
- Patent number 10,388,347
- Issue date Aug 20, 2019
- National Institute of Advanced Industrial Science and Technology
- Rie Matsumoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Perpendicular spin transfer torque memory (STTM) device with enhanc...
- Patent number 9,882,123
- Issue date Jan 30, 2018
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 9,853,207
- Issue date Dec 26, 2017
- Canon Anelva Corporation
- Takuya Seino
- G11 - INFORMATION STORAGE
Information Patent Grant
Laminating magnetic cores for on-chip magnetic devices
- Patent number 9,697,943
- Issue date Jul 4, 2017
- International Business Machines Corporation
- Robert E. Fontana
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Perpendicular spin transfer torque memory (STTM) device with enhanc...
- Patent number 9,478,734
- Issue date Oct 25, 2016
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of magnetic domain wall motion
- Patent number 9,142,759
- Issue date Sep 22, 2015
- Kabushiki Kaisha Toshiba
- Hirofumi Morise
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic device having a magnetic material in a contact structure c...
- Patent number 9,087,633
- Issue date Jul 21, 2015
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory devices including magnetic layers separated by tunn...
- Patent number 9,048,412
- Issue date Jun 2, 2015
- Samsung Electronics Co., Ltd.
- Sechung Oh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Perpendicular spin transfer torque memory (STTM) device with enhanc...
- Patent number 8,796,797
- Issue date Aug 5, 2014
- Intel Corporation
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of magnetic domain wall motion
- Patent number 8,792,271
- Issue date Jul 29, 2014
- Kabushiki Kaisha Toshiba
- Hirofumi Morise
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory element and nonvolatile memory device
- Patent number 8,716,817
- Issue date May 6, 2014
- Kabushiki Kaisha Toshiba
- Daisuke Saida
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory with nano-pillar charge trap
- Patent number 8,687,418
- Issue date Apr 1, 2014
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,665,639
- Issue date Mar 4, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic tunnel junction device
- Patent number 8,604,572
- Issue date Dec 10, 2013
- Regents of the University of Minnesota
- Jian-Ping Wang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Seed layer and free magnetic layer for perpindicular anisotropy in...
- Patent number 8,536,668
- Issue date Sep 17, 2013
- International Business Machines Corporation
- Daniel C. Worledge
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin-transfer torque magnetic random access memory with multi-layer...
- Patent number 8,519,496
- Issue date Aug 27, 2013
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-layer magnetic element, magnetic field sensor, magnetic memor...
- Patent number 8,513,944
- Issue date Aug 20, 2013
- Commissariat a l'Energie Atomique et Aux Energie Alternatives
- Bernard Rodmacq
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,498,150
- Issue date Jul 30, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,498,148
- Issue date Jul 30, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,498,149
- Issue date Jul 30, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,493,779
- Issue date Jul 23, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,493,778
- Issue date Jul 23, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-volatile magnetic memory element with graded layer
- Patent number 8,493,780
- Issue date Jul 23, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Large Dzyaloshinskii – Moriya Interaction and Perpendicular Magneti...
- Publication number 20220406508
- Publication date Dec 22, 2022
- GEORGETOWN UNIVERSITY
- Gong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...
- Publication number 20220199310
- Publication date Jun 23, 2022
- GEORGETOWN UNIVERSITY
- Kai Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DETECTION CIRCUIT, MRAM AND OPERATION METHOD THEREOF
- Publication number 20200286951
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF AND APPARATUS FOR MEASURING MAGNITUDE OF MAGNETIZATION OF...
- Publication number 20200191884
- Publication date Jun 18, 2020
- Korea Research Institute of Standards and Science
- Kyoung-Woong Moon
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC DETECTION CIRCUIT, MRAM AND OPERATION METHOD THEREOF
- Publication number 20190140020
- Publication date May 9, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ji-Feng YING
- G11 - INFORMATION STORAGE
Information Patent Application
LAMINATING MAGNETIC CORES FOR ON-CHIP MAGNETIC DEVICES
- Publication number 20170062111
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Robert E. Fontana
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
- Publication number 20140306303
- Publication date Oct 16, 2014
- Takahiro Moriyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...
- Publication number 20140308760
- Publication date Oct 16, 2014
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNN...
- Publication number 20140191346
- Publication date Jul 10, 2014
- Sechung Oh
- B82 - NANO-TECHNOLOGY
Information Patent Application
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...
- Publication number 20140175575
- Publication date Jun 26, 2014
- Brian S. Doyle
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNN...
- Publication number 20130234269
- Publication date Sep 12, 2013
- Sechung OH
- B82 - NANO-TECHNOLOGY
Information Patent Application
TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNE...
- Publication number 20130207209
- Publication date Aug 15, 2013
- Industrial Technology Research Institute
- Yung-Hung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE C...
- Publication number 20130161768
- Publication date Jun 27, 2013
- Samsung Electronics Co., Ltd.
- Alexey Vasilyevitch Khvalkovskiy
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130088914
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087872
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087869
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087870
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130088915
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20130087871
- Publication date Apr 11, 2013
- Avalanche Technology, Inc.
- Rajiv Yadav Ranjan
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE
- Publication number 20130069185
- Publication date Mar 21, 2013
- Kabushiki Kaisha Toshiba
- Daisuke SAIDA
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistance Device
- Publication number 20130059168
- Publication date Mar 7, 2013
- Agency fo Science, Technology and Research
- Taiebeh Tahmasebi
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC SENSORS HAVING PERPENDICULAR ANISOTROPY FREE LAYER
- Publication number 20130050876
- Publication date Feb 28, 2013
- SEAGATE TECHNOLOGY LLC
- Mark William Covington
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC DETECTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130038421
- Publication date Feb 14, 2013
- Alps Electric Co., Ltd.
- Hideaki KAWASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS
- Publication number 20130001717
- Publication date Jan 3, 2013
- Yuchen Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED LAYER AND FREE MAGNETIC LAYER FOR PERPINDICULAR ANISOTROPY IN...
- Publication number 20120299137
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Daniel C. Worledge
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD OF MAGNETIC DOMAIN WALL MOTION
- Publication number 20120250406
- Publication date Oct 4, 2012
- Kabushiki Kaisha Toshiba
- Hirofumi Morise
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER
- Publication number 20120230095
- Publication date Sep 13, 2012
- Avalanche Technology, Inc.
- Rajiv Yadav RANJAN
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ FILM AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120199470
- Publication date Aug 9, 2012
- RENESAS ELECTRONICS CORPORATION
- Kaoru MORI
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120163070
- Publication date Jun 28, 2012
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM)
- Publication number 20120087185
- Publication date Apr 12, 2012
- Avalanche Technology, Inc.
- Yuchen Zhou
- G11 - INFORMATION STORAGE

made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of and apparatus for measuring magnitude of magnetization of...

Magnetic and spin logic devices based on Jahn-Teller materials

Alloy thin films exhibiting perpendicular magnetic anisotropy

Magnetic detection circuit, MRAM and operation method thereof

Multilayer thin films exhibiting perpendicular magnetic anisotropy

Magnetic detection circuit, MRAM and operation method thereof

Magnetoresistance effect element and magnetic memory

Non-collinear magnetoresistive device

Perpendicular spin transfer torque memory (STTM) device with enhanc...

Magnetoresistance effect element

Laminating magnetic cores for on-chip magnetic devices

Perpendicular spin transfer torque memory (STTM) device with enhanc...

Magnetic memory device and method of magnetic domain wall motion

Magnetic device having a magnetic material in a contact structure c...

Magnetic memory devices including magnetic layers separated by tunn...

Perpendicular spin transfer torque memory (STTM) device with enhanc...

Magnetic memory device and method of magnetic domain wall motion

Magnetic memory element and nonvolatile memory device

Flash memory with nano-pillar charge trap

Magnetoresistive element and magnetic memory

Magnetic tunnel junction device

Seed layer and free magnetic layer for perpindicular anisotropy in...

Spin-transfer torque magnetic random access memory with multi-layer...

Three-layer magnetic element, magnetic field sensor, magnetic memor...

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Non-volatile magnetic memory element with graded layer

Patents Applicationslast 30 patents

Large Dzyaloshinskii – Moriya Interaction and Perpendicular Magneti...

Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic...

MAGNETIC DETECTION CIRCUIT, MRAM AND OPERATION METHOD THEREOF

METHOD OF AND APPARATUS FOR MEASURING MAGNITUDE OF MAGNETIZATION OF...

MAGNETIC DETECTION CIRCUIT, MRAM AND OPERATION METHOD THEREOF

LAMINATING MAGNETIC CORES FOR ON-CHIP MAGNETIC DEVICES

Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...

MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNN...

PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANC...

MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNN...

TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNE...

MAGNETIC DEVICE HAVING A MAGNETIC MATERIAL IN A CONTACT STRUCTURE C...

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

Magnetoresistance Device

MAGNETIC SENSORS HAVING PERPENDICULAR ANISOTROPY FREE LAYER

MAGNETIC DETECTOR AND METHOD FOR MANUFACTURING THE SAME

PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS

SEED LAYER AND FREE MAGNETIC LAYER FOR PERPINDICULAR ANISOTROPY IN...

MAGNETIC MEMORY DEVICE AND METHOD OF MAGNETIC DOMAIN WALL MOTION

NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER

MTJ FILM AND METHOD FOR MANUFACTURING THE SAME

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM)