Memory devices

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CPC
Y10S148/109

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/109Memory devices

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Patents Grantslast 30 patents

Information Patent Grant
Switching of perpendicularly magnetized nanomagnets with spin-orbit...
- Patent number 11,626,229
- Issue date Apr 11, 2023
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching of perpendicularly magnetized nanomagnets with spin-orbit...
- Patent number 11,594,357
- Issue date Feb 28, 2023
- University of Rochester
- Abdelrahman G. Qoutb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and method of formation
- Patent number 5,543,635
- Issue date Aug 6, 1996
- Motorola, Inc.
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a thin film transistor
- Patent number 5,510,278
- Issue date Apr 23, 1996
- Motorola Inc.
- Bich-Yen Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash memory cell with separated and self-aligned tunnel...
- Patent number 5,427,968
- Issue date Jun 27, 1995
- United Microelectronics Corp.
- Gary Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a high voltage MOS transistor
- Patent number 5,234,853
- Issue date Aug 10, 1993
- Fujitsu Limited
- Shinichirou Ikemasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a thin semiconductor film
- Patent number 5,232,868
- Issue date Aug 3, 1993
- Agency of Industrial Science and Technology
- Yutaka Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a stacked semiconductor structure
- Patent number 5,213,990
- Issue date May 25, 1993
- Texas Instruments, Incorporated
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance thin film transistor (TFT) by solid phase epitaxia...
- Patent number 5,156,987
- Issue date Oct 20, 1992
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating-gate memory cell with tailored doping profile
- Patent number 5,156,990
- Issue date Oct 20, 1992
- Texas Instruments Incorporated
- Allan T. Mitchell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erase performance improvement via dual floating gate processing
- Patent number 5,147,813
- Issue date Sep 15, 1992
- Intel Corporation
- Been-Jon Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory
- Patent number 5,118,640
- Issue date Jun 2, 1992
- Sharp Kabushiki Kaisha
- Taku Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory using dummy source/d...
- Patent number 5,100,828
- Issue date Mar 31, 1992
- Sharp Kabushiki Kaisha
- Taku Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and method of production th...
- Patent number 5,100,822
- Issue date Mar 31, 1992
- Hitachi, Ltd.
- Shinichiro Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically alterable, nonvolatile, floating gate type memory devi...
- Patent number 5,081,057
- Issue date Jan 14, 1992
- SGS-Thomson Microelectronics
- Giuseppe Corda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating complementary vertical transistor memory cell
- Patent number 4,981,807
- Issue date Jan 1, 1991
- International Business Machines Corporation
- Chakrapani G. Jambotkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory with sidewall tunnelling area
- Patent number 4,931,847
- Issue date Jun 5, 1990
- SGS-Thomson Microelectronics S.p.A.
- Giuseppe Corda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a read only semiconductor memory device
- Patent number 4,892,841
- Issue date Jan 9, 1990
- Kabushiki Kaisha Toshiba
- Taira Iwase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high-performance trench capacitors for DRAM cells
- Patent number 4,694,561
- Issue date Sep 22, 1987
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- Joseph Lebowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Read only semiconductor memory device with polysilicon drain extens...
- Patent number 4,649,412
- Issue date Mar 10, 1987
- Kabushiki Kaisha Toshiba
- Taira Iwase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing E.sup.2 PROM
- Patent number 4,612,212
- Issue date Sep 16, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing the same
- Patent number 4,531,203
- Issue date Jul 23, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Fujio Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3909807
- Patent number 3,909,807
- Issue date Sep 30, 1975
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240412909
- Publication date Dec 12, 2024
- University of Rochester
- Eby G. Friedman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20240047115
- Publication date Feb 8, 2024
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...
- Publication number 20210319939
- Publication date Oct 14, 2021
- University of Rochester
- Mohammad Kazemi
- G11 - INFORMATION STORAGE

Memory devices

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Switching of perpendicularly magnetized nanomagnets with spin-orbit...

Switching of perpendicularly magnetized nanomagnets with spin-orbit...

Thin film transistor and method of formation

Method for forming a thin film transistor

Split-gate flash memory cell with separated and self-aligned tunnel...

Method of producing a high voltage MOS transistor

Method for forming a thin semiconductor film

Method for forming a stacked semiconductor structure

High performance thin film transistor (TFT) by solid phase epitaxia...

Floating-gate memory cell with tailored doping profile

Erase performance improvement via dual floating gate processing

Method of manufacturing a semiconductor memory

Method of manufacturing a semiconductor memory using dummy source/d...

Semiconductor integrated circuit device and method of production th...

Electrically alterable, nonvolatile, floating gate type memory devi...

Process for fabricating complementary vertical transistor memory cell

Floating gate memory with sidewall tunnelling area

Method of manufacturing a read only semiconductor memory device

Method of making high-performance trench capacitors for DRAM cells

Read only semiconductor memory device with polysilicon drain extens...

Method for manufacturing E.sup.2 PROM

Semiconductor memory device and method for manufacturing the same

3909807

Patents Applicationslast 30 patents

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...

SWITCHING OF PERPENDICULARLY MAGNETIZED NANOMAGNETS WITH SPIN-ORBIT...