Memory structures

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H01L21/8239

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

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H01L21/8239Memory structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory device and method
- Patent number 11,587,823
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Han-Jong Chia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with reduced area
- Patent number 11,532,752
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Integrated structures and methods of forming vertically-stacked mem...
- Patent number 11,482,534
- Issue date Oct 25, 2022
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory containing air gaps
- Patent number 11,456,307
- Issue date Sep 27, 2022
- Semiconductor Manufacturing International (Shanghai) Corporation
- Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array staircase structure
- Patent number 11,423,966
- Issue date Aug 23, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures having varied fin heights for semiconductor device
- Patent number 11,387,347
- Issue date Jul 12, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel magnetoresistive effect element, magnetic memory, and built-...
- Patent number 11,373,915
- Issue date Jun 28, 2022
- TDK Corporation
- Zhenyao Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an array of vertical transistors
- Patent number 11,373,913
- Issue date Jun 28, 2022
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies
- Patent number 11,348,871
- Issue date May 31, 2022
- Micron Technology, Inc.
- Werner Juengling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including a silicon-germanium sourc...
- Patent number 11,322,509
- Issue date May 3, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin current magnetoresistance effect element and magnetic memory
- Patent number 11,276,447
- Issue date Mar 15, 2022
- TDK Corporation
- Yohei Shiokawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magnetoresistive effect element and magnetic memory
- Patent number 11,264,290
- Issue date Mar 1, 2022
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin current magnetization rotational element, magnetoresistance ef...
- Patent number 11,250,897
- Issue date Feb 15, 2022
- TDK Corporation
- Yohei Shiokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 11,217,494
- Issue date Jan 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device including fin-structu...
- Patent number 11,205,655
- Issue date Dec 21, 2021
- Renesas Electronics Corporation
- Tomohiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions
- Patent number 11,205,657
- Issue date Dec 21, 2021
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device including work function adjusting layer...
- Patent number 11,189,618
- Issue date Nov 30, 2021
- Samsung Electronics Co., Ltd.
- Namho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switch device, storage apparatus, and memory system
- Patent number 11,183,633
- Issue date Nov 23, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Sei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of semiconductor device fabrication
- Patent number 11,183,508
- Issue date Nov 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qiguang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance circuit applications using stacked 3D metal lines
- Patent number 11,171,208
- Issue date Nov 9, 2021
- Tokyo Electron Limited
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based strap cell structure for improving memory performance
- Patent number 11,158,632
- Issue date Oct 26, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including work function adjusting layer...
- Patent number 11,152,365
- Issue date Oct 19, 2021
- Samsung Electronics Co., Ltd.
- Namho Jeon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,145,744
- Issue date Oct 12, 2021
- Renesas Electronics Corporation
- Shinichiro Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structures having varied fin heights for semiconductor device
- Patent number 11,133,401
- Issue date Sep 28, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-current magnetization reversal element, magnetoresistance effe...
- Patent number 11,127,641
- Issue date Sep 21, 2021
- TDK Corporation
- Yohei Shiokawa
- G11 - INFORMATION STORAGE
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 11,114,345
- Issue date Sep 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction, spintronics device using same, and method...
- Patent number 11,107,976
- Issue date Aug 31, 2021
- National Institute for Materials Science
- Hiroaki Sukegawa
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND unit cells
- Patent number 11,094,706
- Issue date Aug 17, 2021
- Micron Technology, Inc.
- D. V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND unit cells
- Patent number 11,094,707
- Issue date Aug 17, 2021
- Micron Technology, Inc.
- D.V. Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic sensor and magnetic memory
- Patent number 11,073,575
- Issue date Jul 27, 2021
- TDK Corporation
- Tomoyuki Sasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240015973
- Publication date Jan 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Longxiang YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20230129196
- Publication date Apr 27, 2023
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA
- Publication number 20230114430
- Publication date Apr 13, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-SHENG CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20230027402
- Publication date Jan 26, 2023
- SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Shunpei YAMAZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Structures and Methods of Forming Vertically-Stacked Mem...
- Publication number 20230019097
- Publication date Jan 19, 2023
- Micron Technology, Inc.
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Staircase Structure
- Publication number 20220366952
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Device and Method
- Publication number 20220359270
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
FIN STRUCTURES HAVING VARIED FIN HEIGHTS FOR SEMICONDUCTOR DEVICE
- Publication number 20220344495
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuo-Cheng CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SEMICONDUCTOR, WAFER STACK, METHOD OF MANUFACTURING STACKED...
- Publication number 20220310450
- Publication date Sep 29, 2022
- UltraMemory Inc.
- Kazuhiko KAJIGAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND BUILT-...
- Publication number 20220301935
- Publication date Sep 22, 2022
- TDK Corporation
- Zhenyao TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Array Of Vertical Transistors
- Publication number 20220301941
- Publication date Sep 22, 2022
- Micron Technology, Inc.
- Deepak Chandra Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...
- Publication number 20220293610
- Publication date Sep 15, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- ER-XUAN PING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE AND STORAGE UNIT
- Publication number 20220293855
- Publication date Sep 15, 2022
- Sony Semiconductor Solutions Corporation
- Tetsuya MIZUGUCHI
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Devices and Methods of Manufacture
- Publication number 20220122887
- Publication date Apr 21, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Feng Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING ERROR DETECTION FUNCTION, SEMICONDUCTOR DEVICE...
- Publication number 20220085019
- Publication date Mar 17, 2022
- Hitoshi KUNITAKE
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING A MEMORY DEVICE AND MEMORY DEVICE MANUFACT...
- Publication number 20220051944
- Publication date Feb 17, 2022
- Micron Technology, Inc.
- Paolo Fantini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array Staircase Structure
- Publication number 20220036931
- Publication date Feb 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20220020760
- Publication date Jan 20, 2022
- Yangtze Memory Technologies Co., Ltd.
- Qiguang WANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD
- Publication number 20210407848
- Publication date Dec 30, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.,
- Han-Jong Chia
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20210399000
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qiguang WANG
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFE...
- Publication number 20210375682
- Publication date Dec 2, 2021
- TDK Corporation
- Yohei SHIOKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY AND FORMATION METHOD THEREOF
- Publication number 20210359084
- Publication date Nov 18, 2021
- Changxin Memory Technologies, Inc.
- Qiang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING STACK OXIDE MATERIALS HAVING DIFFER...
- Publication number 20210335815
- Publication date Oct 28, 2021
- Micron Technology, Inc.
- Srikant Jayanti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fin-Based Strap Cell Structure for Improving Memory Performance
- Publication number 20210313320
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Jhon Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20210287934
- Publication date Sep 16, 2021
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA
- Publication number 20210257495
- Publication date Aug 19, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- MENG-SHENG CHANG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH PERFORMANCE CIRCUIT APPLICATIONS USING STACKED 3D METAL LINES
- Publication number 20210175327
- Publication date Jun 10, 2021
- TOKYO ELECTRON LIMITED
- H. Jim Fulford
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM BIT CELLS FORMED WITH DUMMY STRUCTURES
- Publication number 20210151443
- Publication date May 20, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Meixiong Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EF...
- Publication number 20210098040
- Publication date Apr 1, 2021
- TDK Corporation
- Yohei SHIOKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR PREVENTING SILICIDE CONTAMINATION DURING T...
- Publication number 20210066327
- Publication date Mar 4, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Han LIN
- H01 - BASIC ELECTRIC ELEMENTS

Memory structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Three-dimensional memory device and method

Non-volatile memory device with reduced area

Integrated structures and methods of forming vertically-stacked mem...

Flash memory containing air gaps

Memory array staircase structure

Fin structures having varied fin heights for semiconductor device

Tunnel magnetoresistive effect element, magnetic memory, and built-...

Method of forming an array of vertical transistors

Integrated assemblies

Three-dimensional memory device including a silicon-germanium sourc...

Spin current magnetoresistance effect element and magnetic memory

Tunnel magnetoresistive effect element and magnetic memory

Spin current magnetization rotational element, magnetoresistance ef...

Semiconductor devices and methods of manufacture

Method for manufacturing semiconductor device including fin-structu...

Semiconductor constructions

Semiconductor memory device including work function adjusting layer...

Switch device, storage apparatus, and memory system

Methods of semiconductor device fabrication

High performance circuit applications using stacked 3D metal lines

Fin-based strap cell structure for improving memory performance

Semiconductor memory device including work function adjusting layer...

Semiconductor device and method of manufacturing the same

Fin structures having varied fin heights for semiconductor device

Spin-current magnetization reversal element, magnetoresistance effe...

IC including standard cells and SRAM cells

Magnetic tunnel junction, spintronics device using same, and method...

NAND unit cells

NAND unit cells

Magnetoresistance effect element, magnetic sensor and magnetic memory

Patents Applicationslast 30 patents

THREE-DIMENSIONAL NAND MEMORY DEVICE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Integrated Structures and Methods of Forming Vertically-Stacked Mem...

Memory Array Staircase Structure

Three-Dimensional Memory Device and Method

FIN STRUCTURES HAVING VARIED FIN HEIGHTS FOR SEMICONDUCTOR DEVICE

STACKED SEMICONDUCTOR, WAFER STACK, METHOD OF MANUFACTURING STACKED...

TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND BUILT-...

Array Of Vertical Transistors

MANUFACTURING METHOD OF SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR S...

STORAGE DEVICE AND STORAGE UNIT

Semiconductor Devices and Methods of Manufacture

MEMORY DEVICE HAVING ERROR DETECTION FUNCTION, SEMICONDUCTOR DEVICE...

METHOD FOR MANUFACTURING A MEMORY DEVICE AND MEMORY DEVICE MANUFACT...

Memory Array Staircase Structure

METHODS OF SEMICONDUCTOR DEVICE FABRICATION

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD

METHODS OF SEMICONDUCTOR DEVICE FABRICATION

SPIN-CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFE...

MEMORY AND FORMATION METHOD THEREOF

SEMICONDUCTOR DEVICES INCLUDING STACK OXIDE MATERIALS HAVING DIFFER...

Fin-Based Strap Cell Structure for Improving Memory Performance

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

NON-VOLATILE MEMORY DEVICE WITH REDUCED AREA

HIGH PERFORMANCE CIRCUIT APPLICATIONS USING STACKED 3D METAL LINES

SRAM BIT CELLS FORMED WITH DUMMY STRUCTURES

SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EF...

STRUCTURE AND METHOD FOR PREVENTING SILICIDE CONTAMINATION DURING T...