Metal ion trapping

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CPC
G11C2213/11

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group

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G11C2213/11Metal ion trapping

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,972,796
- Issue date Apr 30, 2024
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 11,923,289
- Issue date Mar 5, 2024
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 11,393,748
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,063,214
- Issue date Jul 13, 2021
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 10,971,225
- Issue date Apr 6, 2021
- TOSHIBA MEMORY CORPORATION
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and methods for electrical switching
- Patent number 10,892,407
- Issue date Jan 12, 2021
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked resistive random access memory with integrated access trans...
- Patent number 10,770,512
- Issue date Sep 8, 2020
- International Business Machines Corporation
- Reinaldo Vega
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,680,171
- Issue date Jun 9, 2020
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell switch device
- Patent number 10,658,588
- Issue date May 19, 2020
- Sony Corporation
- Shuichiro Yasuda
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 10,658,285
- Issue date May 19, 2020
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,658,038
- Issue date May 19, 2020
- TOSHIBA MEMORY CORPORATION
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory cell
- Patent number 10,546,633
- Issue date Jan 28, 2020
- MICROSEMI SOC CORP.
- John L McCollum
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching block configuration bit comprising a non-volatile memory...
- Patent number 10,541,025
- Issue date Jan 21, 2020
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 10,475,737
- Issue date Nov 12, 2019
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 10,410,717
- Issue date Sep 10, 2019
- TOSHIBA MEMORY CORPORATION
- Kikuko Sugimae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 10,224,480
- Issue date Mar 5, 2019
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 10,217,514
- Issue date Feb 26, 2019
- TOSHIBA MEMORY CORPORATION
- Kunifumi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and methods for electrical switching
- Patent number 10,115,894
- Issue date Oct 30, 2018
- Massachusetts Institute of Technology
- Jeehwan Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Switching block configuration bit comprising a non-volatile memory...
- Patent number 10,096,362
- Issue date Oct 9, 2018
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and information reading method
- Patent number 9,870,819
- Issue date Jan 16, 2018
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Tsunenori Shiimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Low read current architecture for memory
- Patent number 9,837,149
- Issue date Dec 5, 2017
- Unity Semiconductor Corporation
- Bruce Lynn Bateman
- G11 - INFORMATION STORAGE
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 9,831,425
- Issue date Nov 28, 2017
- Unity Semiconductor Corporation
- Darrell Rinerson
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 9,721,654
- Issue date Aug 1, 2017
- Kabushiki Kaisha Toshiba
- Ryuji Ohba
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 9,595,324
- Issue date Mar 14, 2017
- Kabushiki Kaisha Toshiba
- Hiroki Tokuhira
- G11 - INFORMATION STORAGE
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 9,564,471
- Issue date Feb 7, 2017
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and information reading method
- Patent number 9,548,112
- Issue date Jan 17, 2017
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Tsunenori Shiimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicon based nanoscale crossbar memory
- Patent number 9,520,557
- Issue date Dec 13, 2016
- The Regents of the University of Michigan
- Wei Lu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Low read current architecture for memory
- Patent number 9,368,200
- Issue date Jun 14, 2016
- Unity Semiconductor Corporation
- Bruce Lynn Bateman
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPAR...
- Publication number 20250029654
- Publication date Jan 23, 2025
- Kabushiki Kaisha Toshiba
- Koichi MIZUSHIMA
- G11 - INFORMATION STORAGE
Information Patent Application
Stack of Horizontally Extending and Vertically Overlapping Features...
- Publication number 20240186234
- Publication date Jun 6, 2024
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20230024213
- Publication date Jan 26, 2023
- KIOXIA Corporation
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
Stack of Horizontally Extending and Vertically Overlapping Features...
- Publication number 20220302015
- Publication date Sep 22, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20210264976
- Publication date Aug 26, 2021
- Toshiba Memory Corporation
- Kikuko SUGIMAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20210193917
- Publication date Jun 24, 2021
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20200259079
- Publication date Aug 13, 2020
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Stack Of Horizontally Extending And Vertically Overlapping Features...
- Publication number 20200243437
- Publication date Jul 30, 2020
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
Stack Of Horizontally Extending And Vertically Overlapping Features...
- Publication number 20200051904
- Publication date Feb 13, 2020
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20190362786
- Publication date Nov 28, 2019
- Toshiba Memory Corporation
- Kikuko SUGIMAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20190173006
- Publication date Jun 6, 2019
- Hefei Reliance Memory Limited
- Darrell RINERSON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20190156888
- Publication date May 23, 2019
- Toshiba Memory Corporation
- Kunifumi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR ELECTRICAL SWITCHING
- Publication number 20190036021
- Publication date Jan 31, 2019
- Massachusetts Institute of Technology
- Jeehwan KIM
- G11 - INFORMATION STORAGE
Information Patent Application
SWITCHING BLOCK CONFIGURATION BIT COMPRISING A NON-VOLATILE MEMORY...
- Publication number 20190027219
- Publication date Jan 24, 2019
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20180301190
- Publication date Oct 18, 2018
- Toshiba Memory Corporation
- Kunifumi SUZUKI
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive Random Access Memory Cell
- Publication number 20180166135
- Publication date Jun 14, 2018
- Microsemi SoC Corp.
- John L. McCollum
- G11 - INFORMATION STORAGE
Information Patent Application
TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE
- Publication number 20180130946
- Publication date May 10, 2018
- UNITY SEMICONDUCTOR CORPORATION
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Apparatus and Methods for Electrical Switching
- Publication number 20170365778
- Publication date Dec 21, 2017
- Jeehwan Kim
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20170256312
- Publication date Sep 7, 2017
- Kabushiki Kaisha Toshiba
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR...
- Publication number 20170179382
- Publication date Jun 22, 2017
- Microsemi SoC Corporation
- John L. McCollum
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20170084329
- Publication date Mar 23, 2017
- KABUSHIKI KAISHA TOSHIBA
- Hiroki TOKUHIRA
- G11 - INFORMATION STORAGE
Information Patent Application
Stack Of Horizontally Extending And Vertically Overlapping Features...
- Publication number 20160225822
- Publication date Aug 4, 2016
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
LOW READ CURRENT ARCHITECTURE FOR MEMORY
- Publication number 20140334222
- Publication date Nov 13, 2014
- UNITY SEMICONDUCTOR CORPORATION
- Bruce Lynn Bateman
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND INFORMATION READING METHOD
- Publication number 20140254241
- Publication date Sep 11, 2014
- SONY CORPORATION
- Tsunenori Shiimoto
- G11 - INFORMATION STORAGE
Information Patent Application
SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE
- Publication number 20140153317
- Publication date Jun 5, 2014
- Wei Lu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND MEMORY CELL VOLTAGE APPLICATION METHOD
- Publication number 20130265816
- Publication date Oct 10, 2013
- Hirofumi Inoue
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTROCHEMICAL TRANSISTOR
- Publication number 20130140648
- Publication date Jun 6, 2013
- Tsuyoshi Hasegawa
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE
- Publication number 20130001497
- Publication date Jan 3, 2013
- SONY CORPORATION
- Kazuhiro Ohba
- G11 - INFORMATION STORAGE
Information Patent Application
Stack Of Horizontally Extending And Vertically Overlapping Features...
- Publication number 20120261722
- Publication date Oct 18, 2012
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Application
Combined Memories In Integrated Circuits
- Publication number 20120176840
- Publication date Jul 12, 2012
- UNITY SEMICONDUCTOR CORPORATION
- Robert Norman
- G06 - COMPUTING CALCULATING COUNTING

Metal ion trapping

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive random access memory device with three-dimensional cross-...

Stack of horizontally extending and vertically overlapping features...

Two-terminal reversibly switchable memory device

Resistive random access memory device with three-dimensional cross-...

Stack of horizontally extending and vertically overlapping features...

Two-terminal reversibly switchable memory device

Resistive random access memory device with three-dimensional cross-...

Apparatus and methods for electrical switching

Stacked resistive random access memory with integrated access trans...

Two-terminal reversibly switchable memory device

Memory cell switch device

Stack of horizontally extending and vertically overlapping features...

Semiconductor memory device

Resistive random access memory cell

Switching block configuration bit comprising a non-volatile memory...

Stack of horizontally extending and vertically overlapping features...

Resistive random access memory device with three-dimensional cross-...

Two-terminal reversibly switchable memory device

Semiconductor memory device

Apparatus and methods for electrical switching

Switching block configuration bit comprising a non-volatile memory...

Semiconductor device and information reading method

Low read current architecture for memory

Two-terminal reversibly switchable memory device

Memory device

Semiconductor memory device

Stack of horizontally extending and vertically overlapping features...

Semiconductor device and information reading method

Silicon based nanoscale crossbar memory

Low read current architecture for memory

Patents Applicationslast 30 patents

RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPAR...

Stack of Horizontally Extending and Vertically Overlapping Features...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

Stack of Horizontally Extending and Vertically Overlapping Features...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

Stack Of Horizontally Extending And Vertically Overlapping Features...

Stack Of Horizontally Extending And Vertically Overlapping Features...

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

APPARATUS AND METHODS FOR ELECTRICAL SWITCHING

SWITCHING BLOCK CONFIGURATION BIT COMPRISING A NON-VOLATILE MEMORY...

SEMICONDUCTOR MEMORY DEVICE

Resistive Random Access Memory Cell

TWO-TERMINAL REVERSIBLY SWITCHABLE MEMORY DEVICE

Apparatus and Methods for Electrical Switching

MEMORY DEVICE

LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR...

SEMICONDUCTOR MEMORY DEVICE

Stack Of Horizontally Extending And Vertically Overlapping Features...

LOW READ CURRENT ARCHITECTURE FOR MEMORY

SEMICONDUCTOR DEVICE AND INFORMATION READING METHOD

SILICON-BASED NANOSCALE RESISTIVE DEVICE WITH ADJUSTABLE RESISTANCE

SEMICONDUCTOR MEMORY DEVICE AND MEMORY CELL VOLTAGE APPLICATION METHOD

ELECTROCHEMICAL TRANSISTOR

MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE

Stack Of Horizontally Extending And Vertically Overlapping Features...

Combined Memories In Integrated Circuits