Modification of the switching material

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CPC
H01L45/1641

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/1641Modification of the switching material

Industries

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Oxide-based resistive memory having a plasma-exposed bottom electrode
- Patent number 11,647,680
- Issue date May 9, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,641,786
- Issue date May 2, 2023
- Commissariat a l'Energie Atomique et aux Energies
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stackable symmetrical operation memory bit cell structure with bidi...
- Patent number 11,621,297
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Alexander Reznicek
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 11,621,298
- Issue date Apr 4, 2023
- SK hynix Inc.
- Sung Kil Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One time programmable non-volatile memory cell on glass substrate
- Patent number 11,610,103
- Issue date Mar 21, 2023
- eMemory Technology Inc.
- Wein-Town Sun
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristors and related systems and methods
- Patent number 11,552,246
- Issue date Jan 10, 2023
- Massachusetts Institute of Technology
- Jeehwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Correlated electron device formed via conversion of conductive subs...
- Patent number 11,522,133
- Issue date Dec 6, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spike current suppression in a memory array
- Patent number 11,514,985
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Sundaravadivel Rajarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Resistive random access memory device and methods of fabrication
- Patent number 11,502,254
- Issue date Nov 15, 2022
- Intel Corporation
- Nathan Strutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a variable resistance memory device
- Patent number 11,482,670
- Issue date Oct 25, 2022
- Samsung Electronics Co., Ltd.
- Jiho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for separating a removable composite structure by means of a...
- Patent number 11,469,367
- Issue date Oct 11, 2022
- Soitec
- Jean-Marc Bethoux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with memory cells
- Patent number 11,462,552
- Issue date Oct 4, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating correlated electron material (CEM) devices
- Patent number 11,450,804
- Issue date Sep 20, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with switching multi-layer st...
- Patent number 11,430,948
- Issue date Aug 30, 2022
- Intel Corporation
- Timothy Glassman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of fabricating the same
- Patent number 11,411,179
- Issue date Aug 9, 2022
- Samsung Electronics Co., Ltd.
- Jaeho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple memory states device and method of making same
- Patent number 11,386,953
- Issue date Jul 12, 2022
- Cyberswarm, Inc.
- Viorel-Georgel Dumitru
- G11 - INFORMATION STORAGE
Information Patent Grant
Annealing processes for memory devices
- Patent number 11,362,275
- Issue date Jun 14, 2022
- Applied Materials, Inc.
- Nicolas Louis Gabriel Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 11,355,702
- Issue date Jun 7, 2022
- STMicroelectronics S.r.l.
- Paolo Giuseppe Cappelletti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing phase change memory and phase change memory
- Patent number 11,302,866
- Issue date Apr 12, 2022
- Jiangsu Advanced Memory Technology Co., Ltd.
- Chung-Hon Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a correlated electron material (CEM)
- Patent number 11,258,010
- Issue date Feb 22, 2022
- CERFE LABS, INC.
- Carlos Alberto Paz de Araujo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing phase change memory
- Patent number 11,258,013
- Issue date Feb 22, 2022
- Jiangsu Advanced Memory Technology Co., Ltd.
- Chung-Hon Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Projected memory device with carbon-based projection component
- Patent number 11,251,370
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ghazi Sarwat Syed
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Artificial neural networks (ANN) including a resistive element base...
- Patent number 11,227,996
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ali Afzali-Ardakani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Phase change material with reduced reset state resistance drift
- Patent number 11,195,999
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low forming voltage non-volatile memory (NVM)
- Patent number 11,196,000
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM device with improved performance
- Patent number 11,165,021
- Issue date Nov 2, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20240023466
- Publication date Jan 18, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413699
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Hye Jung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...
- Publication number 20230371407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Watson Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT
- Publication number 20230284543
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...
- Publication number 20230210025
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEUROMORPHIC MEMRISTOR DEVICE BASED ON VERTICALLY-ORIENTED HALIDE P...
- Publication number 20230172082
- Publication date Jun 1, 2023
- Seoul National University R&DB Foundation
- Ho Won Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230138698
- Publication date May 4, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230136317
- Publication date May 4, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATING METHOD OF...
- Publication number 20230136441
- Publication date May 4, 2023
- UNITED MICROELECTRONICS CORP.
- Yi-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE IDENTIFICATION USING PREFORMED RESISTIVE MEMORY
- Publication number 20230085995
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED BRIDGE CELL PHASE CHANGE MEMORY
- Publication number 20230075622
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD
- Publication number 20230050843
- Publication date Feb 16, 2023
- HANGZHOU WEIMING XINKE TECHNOLOGY CO., LTD
- Han XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY
- Publication number 20230018390
- Publication date Jan 19, 2023
- Micron Technology, Inc.
- Sundaravadivel Rajarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...
- Publication number 20220393107
- Publication date Dec 8, 2022
- TOKYO ELECTRON LIMITED
- Devi KOTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES
- Publication number 20220384720
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES
- Publication number 20220384719
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20220367801
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER SELECTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20220367809
- Publication date Nov 17, 2022
- POSTECH Research and Business Development Foundation
- Jang Sik LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME
- Publication number 20220343974
- Publication date Oct 27, 2022
- Cyberswarm, Inc.
- Viorel-Georgel DUMITRU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE SWITCHING MEMORY DEVICES AND METHOD(S) FOR FORMING THE RE...
- Publication number 20220320429
- Publication date Oct 6, 2022
- Crossbar, Inc.
- Sundar Narayanan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY
- Publication number 20220319592
- Publication date Oct 6, 2022
- Micron Technology, Inc.
- Sundaravadivel Rajarajan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ENCAPSULATION LAYER FOR CHALCOGENIDE MATERIAL
- Publication number 20220310917
- Publication date Sep 29, 2022
- EUGENUS, INC.
- Sang Young Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20220302379
- Publication date Sep 22, 2022
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
- Paolo Giuseppe CAPPELLETTI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220293679
- Publication date Sep 15, 2022
- UNITED MICROELECTRONICS CORP.
- Wen-Hsin Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20220254806
- Publication date Aug 11, 2022
- SK HYNIX INC.
- Moon Sik SEO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES
- Publication number 20220209113
- Publication date Jun 30, 2022
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY FORMED MEMORY ARRAY
- Publication number 20220190032
- Publication date Jun 16, 2022
- Micron Technology, Inc.
- Andrea Redaelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE
- Publication number 20220165945
- Publication date May 26, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Gabriele Navarro
- G11 - INFORMATION STORAGE
Information Patent Application
PHYSICAL UNCLONABLE FUNCTIONS WITH COPPER-SILICON OXIDE PROGRAMMABL...
- Publication number 20220148982
- Publication date May 12, 2022
- Michael KOZICKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and manufacturing method thereof
- Publication number 20220140239
- Publication date May 5, 2022
- UNITED MICROELECTRONICS CORP.
- Shih-Wei Su
- H01 - BASIC ELECTRIC ELEMENTS

Modification of the switching material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Non-volatile memory structure with positioned doping

Oxide-based resistive memory having a plasma-exposed bottom electrode

Memory device

High yield RRAM cell with optimized film scheme

Stackable symmetrical operation memory bit cell structure with bidi...

Electronic device and method for fabricating the same

One time programmable non-volatile memory cell on glass substrate

Method for forming RRAM with a barrier layer

Diffusion barrier layer in programmable metallization cell

Memristors and related systems and methods

Correlated electron device formed via conversion of conductive subs...

Spike current suppression in a memory array

Resistive random access memory device and methods of fabrication

Method of fabricating a variable resistance memory device

Method for separating a removable composite structure by means of a...

Semiconductor devices with memory cells

Fabricating correlated electron material (CEM) devices

Resistive random access memory device with switching multi-layer st...

Variable resistance memory device and method of fabricating the same

Multiple memory states device and method of making same

Annealing processes for memory devices

Memory device

Method of manufacturing phase change memory and phase change memory

Formation of a correlated electron material (CEM)

Method of manufacturing phase change memory

Projected memory device with carbon-based projection component

Artificial neural networks (ANN) including a resistive element base...

Phase change material with reduced reset state resistance drift

Low forming voltage non-volatile memory (NVM)

RRAM device with improved performance

Patents Applicationslast 30 patents

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...

PHASE CHANGE MEMORY WITH REDUCED PROGRAMMING CURRENT

REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...

NEUROMORPHIC MEMRISTOR DEVICE BASED ON VERTICALLY-ORIENTED HALIDE P...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATING METHOD OF...

SEMICONDUCTOR DEVICE IDENTIFICATION USING PREFORMED RESISTIVE MEMORY

CONFINED BRIDGE CELL PHASE CHANGE MEMORY

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD

SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY

Plasma Co-Doping To Reduce The Forming Voltage In Resistive Random...

MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN PLANAR STRUCTURES

MEMORY CELLS WITH SIDEWALL AND BULK REGIONS IN VERTICAL STRUCTURES

DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL

MULTI-LAYER SELECTOR DEVICE AND METHOD OF FABRICATING THE SAME

MULTIPLE MEMORY STATES DEVICE AND METHOD OF MAKING SAME

RESISTIVE SWITCHING MEMORY DEVICES AND METHOD(S) FOR FORMING THE RE...

SPIKE CURRENT SUPPRESSION IN A MEMORY ARRAY

ENCAPSULATION LAYER FOR CHALCOGENIDE MATERIAL

MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES

ELECTRICALLY FORMED MEMORY ARRAY

PHASE CHANGE MEMORY DEVICE

PHYSICAL UNCLONABLE FUNCTIONS WITH COPPER-SILICON OXIDE PROGRAMMABL...

Semiconductor structure and manufacturing method thereof