Multilevel magnetic memory cell using non-magnetic conducting interlayer

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G11C2211/5616

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GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C2211/5616Multilevel magnetic memory cell using non-magnetic conducting interlayer

Industries

Patents Grantslast 30 patents

Information Patent Grant
Perpendicular magnetic memory with symmetric fixed layers
- Patent number 10,832,749
- Issue date Nov 10, 2020
- Intel Corporation
- Charles C. Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-bit magnetic random access memory cell employing adiabatic...
- Patent number 7,109,539
- Issue date Sep 19, 2006
- International Business Machines Corporation
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit MRAM device with switching nucleation sites
- Patent number 7,078,244
- Issue date Jul 18, 2006
- Hewlett-Packard Development Company, L.P.
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element magneto-resistance effect memory...
- Patent number 7,018,725
- Issue date Mar 28, 2006
- Matsushita Electric Industrial Co., Ltd.
- Akihiro Odagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit MRAM device with switching nucleation sites
- Patent number 6,927,995
- Issue date Aug 9, 2005
- Hewlett-Packard Development Company, L.P.
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit magnetic memory cells
- Patent number 6,911,710
- Issue date Jun 28, 2005
- Hewlett-Packard Development Company, L.P.
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-bit magnetic memory cells
- Patent number 6,862,212
- Issue date Mar 1, 2005
- Hewlett-Packard Development Company, L.P.
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect memory device and method for producing the...
- Patent number 6,778,425
- Issue date Aug 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Akihiro Odagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin-valve structure and method for making spin-valve structures
- Patent number 6,721,141
- Issue date Apr 13, 2004
- Interuniversitair Microelektronica Centrum (IMECVZW)
- Karen Attenborough
- G11 - INFORMATION STORAGE
Information Patent Grant
Multibit magnetic memory element
- Patent number 6,590,806
- Issue date Jul 8, 2003
- Hewlett-Packard Development Company, L.P.
- Manoj K. Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell configuration and method for operating the configuration
- Patent number 6,574,138
- Issue date Jun 3, 2003
- Infineon Technologies AG
- Siegfried Schwarzl
- G11 - INFORMATION STORAGE
Information Patent Grant
Magneto-resistance effect element, magneto-resistance effect memory...
- Patent number 6,436,526
- Issue date Aug 20, 2002
- Matsushita Electric Industrial Co., Ltd.
- Akihiro Odagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect device, and magnetoresistaance effect type...
- Patent number 6,256,222
- Issue date Jul 3, 2001
- Matsushita Electric Industrial Co., Ltd.
- Hiroshi Sakakima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Element exploiting magnetic material and addressing method therefor
- Patent number 6,178,112
- Issue date Jan 23, 2001
- Sony Corporation
- Kazuhiro Bessho
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect device, and magnetoresistance effect type...
- Patent number 6,111,782
- Issue date Aug 29, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hiroshi Sakakima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistance effect device, and magnetoresistance effect type...
- Patent number 6,005,798
- Issue date Dec 21, 1999
- Matsushita Electric Industrial Co., Ltd.
- Hiroshi Sakakima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-layer magnet tunneling junction memory cells
- Patent number 5,978,257
- Issue date Nov 2, 1999
- Motorola, Inc.
- Xiaodong T. Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
MRAM cell requiring low switching field
- Patent number 5,917,749
- Issue date Jun 29, 1999
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect device and magnetoresistance effect type h...
- Patent number 5,841,611
- Issue date Nov 24, 1998
- Matsushita Electric Industrial Co., Ltd.
- Hiroshi Sakakima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High-speed, low-current magnetoresistive memory device
- Patent number 5,825,685
- Issue date Oct 20, 1998
- Oki Electric Industry Co., Ltd.
- Haruki Yamane
- G11 - INFORMATION STORAGE
Information Patent Grant
Mram with aligned magnetic vectors
- Patent number 5,757,695
- Issue date May 26, 1998
- Motorola, Inc.
- Jing Shi
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM with pinned ends
- Patent number 5,748,524
- Issue date May 5, 1998
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
High-speed, low-current magnetoresistive memory device
- Patent number 5,745,406
- Issue date Apr 28, 1998
- Oki Electric Industry Co., Ltd.
- Haruki Yamane
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer magnetic memory cell with low switching current
- Patent number 5,745,408
- Issue date Apr 28, 1998
- Motorola, Inc.
- Eugene Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-layer magnetic tunneling junction memory cells
- Patent number 5,734,605
- Issue date Mar 31, 1998
- Motorola, Inc.
- Xiaodong T. Zhu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for detecting information stored in a MRAM cell having two m...
- Patent number 5,703,805
- Issue date Dec 30, 1997
- Motorola
- Saied N. Tehrani
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Giant magnetoresistance (GMR) memory device
- Publication number 20090262570
- Publication date Oct 22, 2009
- Advanced Micro Devices, Inc.
- Ronald Potok
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple-bit magnetic random access memory cell employing adiabatic...
- Publication number 20050199927
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Yu Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-bit MRAM device with switching nucleation sites
- Publication number 20050195649
- Publication date Sep 8, 2005
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-bit magnetic memory cells
- Publication number 20050167657
- Publication date Aug 4, 2005
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Application
Spin-valve structure and method for making spin-valve structures
- Publication number 20040169965
- Publication date Sep 2, 2004
- Interuniversitair Microelektronica Centrum
- Karen Attenborough
- G01 - MEASURING TESTING
Information Patent Application
Multi-bit magnetic memory cells
- Publication number 20040090844
- Publication date May 13, 2004
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-bit MRAM device with switching nucleation sites
- Publication number 20030209769
- Publication date Nov 13, 2003
- Janice H. Nickel
- G11 - INFORMATION STORAGE
Information Patent Application
Memory cell configuration and method for operating the configuration
- Publication number 20020154537
- Publication date Oct 24, 2002
- Siegfried Schwarzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magneto-resistance effect element magneto-resistance effect memory...
- Publication number 20020058158
- Publication date May 16, 2002
- Akihiro Odagawa
- B82 - NANO-TECHNOLOGY
Information Patent Application
Multi-bit magnetic memory cells
- Publication number 20020036331
- Publication date Mar 28, 2002
- Janice H. Nickel
- H01 - BASIC ELECTRIC ELEMENTS

Multilevel magnetic memory cell using non-magnetic conducting interlayer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Perpendicular magnetic memory with symmetric fixed layers

Multiple-bit magnetic random access memory cell employing adiabatic...

Multi-bit MRAM device with switching nucleation sites

Magneto-resistance effect element magneto-resistance effect memory...

Multi-bit MRAM device with switching nucleation sites

Multi-bit magnetic memory cells

Multi-bit magnetic memory cells

Magnetoresistance effect memory device and method for producing the...

Spin-valve structure and method for making spin-valve structures

Multibit magnetic memory element

Memory cell configuration and method for operating the configuration

Magneto-resistance effect element, magneto-resistance effect memory...

Magnetoresistance effect device, and magnetoresistaance effect type...

Element exploiting magnetic material and addressing method therefor

Magnetoresistance effect device, and magnetoresistance effect type...

Magnetoresistance effect device, and magnetoresistance effect type...

Multi-layer magnet tunneling junction memory cells

MRAM cell requiring low switching field

Magnetoresistance effect device and magnetoresistance effect type h...

High-speed, low-current magnetoresistive memory device

Mram with aligned magnetic vectors

MRAM with pinned ends

High-speed, low-current magnetoresistive memory device

Multi-layer magnetic memory cell with low switching current

Multi-layer magnetic tunneling junction memory cells

Method for detecting information stored in a MRAM cell having two m...

Patents Applicationslast 30 patents

Giant magnetoresistance (GMR) memory device

Multiple-bit magnetic random access memory cell employing adiabatic...

Multi-bit MRAM device with switching nucleation sites

Multi-bit magnetic memory cells

Spin-valve structure and method for making spin-valve structures

Multi-bit magnetic memory cells

Multi-bit MRAM device with switching nucleation sites

Memory cell configuration and method for operating the configuration

Magneto-resistance effect element magneto-resistance effect memory...

Multi-bit magnetic memory cells