Multilevel memory cell with additional gates, not being floating or control gates

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CPC
G11C2211/5613

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements Storage elements therefor

Current Industry

G11C2211/5613Multilevel memory cell with additional gates, not being floating or control gates

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Memory apparatus with gated phase-change memory cells
- Patent number 9,087,574
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Gael Close
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory apparatus with gated phase-change memory cells
- Patent number 9,076,517
- Issue date Jul 7, 2015
- International Business Machines Corporation
- Gael Close
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly compact EPROM and flash EEPROM devices
- Patent number 6,914,817
- Issue date Jul 5, 2005
- SanDisk Corporation
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly compact EPROM and flash EEPROM devices
- Patent number 6,570,790
- Issue date May 27, 2003
- SanDisk Corporation
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly compact EPROM and flash EEPROM devices
- Patent number 6,504,762
- Issue date Jan 7, 2003
- SanDisk Corporation
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level memory cell
- Patent number 6,480,414
- Issue date Nov 12, 2002
- Winbond Electronics Corp.
- Hong Chin Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly compact EPROM and flash EEPROM devices
- Patent number 6,462,988
- Issue date Oct 8, 2002
- SanDisk Corporation
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 6,456,532
- Issue date Sep 24, 2002
- Tadahiro Ohmi
- Tadahiro Ohmi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell and method for programming and/or verifying...
- Patent number 6,411,547
- Issue date Jun 25, 2002
- Hyundai Electronics Industries Co,. Ltd.
- Woong Lim Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory that stores multiple bits per storage cell
- Patent number 6,373,767
- Issue date Apr 16, 2002
- Robert Patti
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell and method for programming and/or verifying...
- Patent number 6,212,100
- Issue date Apr 3, 2001
- Hyundai Electronics Industries Co., Ltd.
- Woong Lim Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Four-terminal EEPROM cell for storing an analog voltage and memory...
- Patent number 6,154,392
- Issue date Nov 28, 2000
- Robert Patti
- G11 - INFORMATION STORAGE
Information Patent Grant
Latch-type sensing circuit and program-verify circuit
- Patent number 6,097,634
- Issue date Aug 1, 2000
- Sony Corporation
- Toshinobu Sugiyama
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device capable of storing multi-va...
- Patent number 6,055,181
- Issue date Apr 25, 2000
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cell and method for programming and/or verifying...
- Patent number 6,034,892
- Issue date Mar 7, 2000
- LG Semicon Co., Ltd.
- Woong Lim Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device capable of storing analog o...
- Patent number 5,973,960
- Issue date Oct 26, 1999
- Tadahiro OHMI and Tadashi Shibata
- Tadashi Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Highly compact EPROM and flash EEPROM devices
- Patent number 5,963,480
- Issue date Oct 5, 1999
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques of programming and erasing an array of multi-state flash...
- Patent number 5,909,390
- Issue date Jun 1, 1999
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory and method of programming the same
- Patent number 5,905,674
- Issue date May 18, 1999
- Lg Semicon Co., Ltd.
- Woong-Lim Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-state flash EEPROM system with defect management including an...
- Patent number 5,862,081
- Issue date Jan 19, 1999
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash EEPROM memory systems and methods of using them
- Patent number 5,835,415
- Issue date Nov 10, 1998
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level nonvolatile semiconductor memory device having improved...
- Patent number 5,815,436
- Issue date Sep 29, 1998
- Kabushiki Kaisha Toshiba
- Tomoharu Tanaka
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device
- Patent number 5,801,993
- Issue date Sep 1, 1998
- LG Semicon Co., Ltd.
- Woong Lim Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory having multi-bit data cells with double layered...
- Patent number 5,789,777
- Issue date Aug 4, 1998
- Motorola, Inc.
- Toshiaki Kojima
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable nonvolatile memory and method of programming the same
- Patent number 5,745,412
- Issue date Apr 28, 1998
- Lg Semicon Co., Ltd.
- Woong-Lim Choi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile semiconductor memory device
- Patent number 5,745,416
- Issue date Apr 28, 1998
- Shibata; Tadashi
- Tadashi Shibata
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory having a cell applying to multi-bit data by dou...
- Patent number 5,739,568
- Issue date Apr 14, 1998
- Motorola, Inc.
- Toshiaki Kojima
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash EEPROM system with storage of sector characteristic informati...
- Patent number 5,712,819
- Issue date Jan 27, 1998
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash EEPROM system cell array with more than two storage states pe...
- Patent number 5,642,312
- Issue date Jun 24, 1997
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash EEPROM system cell array with more than two storage states pe...
- Patent number 5,583,812
- Issue date Dec 10, 1996
- Eliyahou Harari
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MEMORY APPARATUS WITH GATED PHASE-CHANGE MEMORY CELLS
- Publication number 20130322168
- Publication date Dec 5, 2013
- Gael Close
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY APPARATUS WITH GATED PHASE-CHANGE MEMORY CELLS
- Publication number 20130322166
- Publication date Dec 5, 2013
- International Business Machines Corporation
- Gael Close
- G11 - INFORMATION STORAGE
Information Patent Application
Highly compact Eprom and flash EEprom devices
- Publication number 20050243601
- Publication date Nov 3, 2005
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Application
Highly compact Eprom and flash EEprom devices
- Publication number 20030218920
- Publication date Nov 27, 2003
- SanDisk Corporation
- Eliyahou Harari
- G11 - INFORMATION STORAGE
Information Patent Application
Nonvolatile memory cell and method for programming and/or verifying...
- Publication number 20010004325
- Publication date Jun 21, 2001
- Hyundai Electronics Industries Co., Ltd.
- Woong Lim Choi
- H01 - BASIC ELECTRIC ELEMENTS

Multilevel memory cell with additional gates, not being floating or control gates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Memory apparatus with gated phase-change memory cells

Memory apparatus with gated phase-change memory cells

Highly compact EPROM and flash EEPROM devices

Highly compact EPROM and flash EEPROM devices

Highly compact EPROM and flash EEPROM devices

Multi-level memory cell

Highly compact EPROM and flash EEPROM devices

Semiconductor memory device

Nonvolatile memory cell and method for programming and/or verifying...

Memory that stores multiple bits per storage cell

Nonvolatile memory cell and method for programming and/or verifying...

Four-terminal EEPROM cell for storing an analog voltage and memory...

Latch-type sensing circuit and program-verify circuit

Nonvolatile semiconductor memory device capable of storing multi-va...

Nonvolatile memory cell and method for programming and/or verifying...

Nonvolatile semiconductor memory device capable of storing analog o...

Highly compact EPROM and flash EEPROM devices

Techniques of programming and erasing an array of multi-state flash...

Nonvolatile memory and method of programming the same

Multi-state flash EEPROM system with defect management including an...

Flash EEPROM memory systems and methods of using them

Multi-level nonvolatile semiconductor memory device having improved...

Nonvolatile memory device

Non-volatile memory having multi-bit data cells with double layered...

Programmable nonvolatile memory and method of programming the same

Non-volatile semiconductor memory device

Non-volatile memory having a cell applying to multi-bit data by dou...

Flash EEPROM system with storage of sector characteristic informati...

Flash EEPROM system cell array with more than two storage states pe...

Flash EEPROM system cell array with more than two storage states pe...

Patents Applicationslast 30 patents

MEMORY APPARATUS WITH GATED PHASE-CHANGE MEMORY CELLS

MEMORY APPARATUS WITH GATED PHASE-CHANGE MEMORY CELLS

Highly compact Eprom and flash EEprom devices

Highly compact Eprom and flash EEprom devices

Nonvolatile memory cell and method for programming and/or verifying...