Multiple reduced surface field (multi-RESURF) structures

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H01L29/0634

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0634Multiple reduced surface field (multi-RESURF) structures

Industries

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Patents Grantslast 30 patents

Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction silicon carbide semiconductor device and manufacturi...
- Patent number 12,170,312
- Issue date Dec 17, 2024
- Fuji Electric Co., Ltd.
- Kensuke Takenaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor cell and power transistor having field shielding c...
- Patent number 12,159,900
- Issue date Dec 3, 2024
- Robert Bosch GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,154,943
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device
- Patent number 12,154,944
- Issue date Nov 26, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction device and method for making the same
- Patent number 12,136,648
- Issue date Nov 5, 2024
- Shenzhen Sanrise-Tech Co., LTD
- Shengan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 12,136,647
- Issue date Nov 5, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,125,905
- Issue date Oct 22, 2024
- Renesas Electronics Corporation
- Yoshinori Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with shielding structure
- Patent number 12,119,377
- Issue date Oct 15, 2024
- Infineon Technologies AG
- Michael Hell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having vertically parallel p-n layers fo...
- Patent number 12,119,376
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-balance power device, and process for manufacturing the char...
- Patent number 12,113,103
- Issue date Oct 8, 2024
- STMicroelectronics S.r.l.
- Antonello Santangelo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC-mosfet
- Patent number 12,107,158
- Issue date Oct 1, 2024
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 12,107,173
- Issue date Oct 1, 2024
- Semiconductor Components Industries, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical string driver with extended gate junction structure
- Patent number 12,089,412
- Issue date Sep 10, 2024
- INTEL NDTM US LLC
- Dong Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device utilzing two hard ma...
- Patent number 12,087,812
- Issue date Sep 10, 2024
- Infineon Technologies AG
- Andreas Voerckel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 12,080,757
- Issue date Sep 3, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-balancing super junction structure and preparation method thereof
- Patent number 12,074,197
- Issue date Aug 27, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO. LTD.
- Daili Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gradient doping epitaxy in superjunction to improve breakdown voltage
- Patent number 12,074,196
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,068,411
- Issue date Aug 20, 2024
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,062,726
- Issue date Aug 13, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge balance semiconductor device, in particular for high efficie...
- Patent number 12,057,474
- Issue date Aug 6, 2024
- STMicroelectronics S.r.l.
- Antonino Schillaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a super junction structure and super juncti...
- Patent number 12,040,358
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shuai Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device and method for forming a superjunct...
- Patent number 12,034,040
- Issue date Jul 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a carrier trapping region including cry...
- Patent number 12,027,579
- Issue date Jul 2, 2024
- Rohm Co., Ltd.
- Seigo Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Core-shell nanofin vertical switch and high-voltage switching
- Patent number 12,009,418
- Issue date Jun 11, 2024
- GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY O...
- Kristine Ann Bertness
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction semiconductor device and method of manufacturing same
- Patent number 12,009,419
- Issue date Jun 11, 2024
- DB HiTek, Co., Ltd.
- Yong Sin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device and method of manufacturing the...
- Patent number 12,002,849
- Issue date Jun 4, 2024
- DB HITEK CO., LTD.
- Jong Min Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor protection device
- Patent number 12,002,890
- Issue date Jun 4, 2024
- Samsung Electronics Co., Ltd.
- Jaehyun Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Half-bridge circuit including integrated level shifter transistor
- Patent number 12,002,804
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,996,442
- Issue date May 28, 2024
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015175
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yoshinori KAYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS
- Publication number 20240429272
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Rahul R. Potera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-BALANCE POWER DEVICE, AND PROCESS FOR MANUFACTURING THE CHAR...
- Publication number 20240429273
- Publication date Dec 26, 2024
- STMicroelectronics S.r.l.
- Antonello SANTANGELO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405067
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Forming MEMS Super-Junction Meta...
- Publication number 20240405068
- Publication date Dec 5, 2024
- IceMos Technology Limited
- Samuel J. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20240405121
- Publication date Dec 5, 2024
- Mosel Vitelic Inc.
- Chia-Ming Kou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE
- Publication number 20240395804
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...
- Publication number 20240395877
- Publication date Nov 28, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE
- Publication number 20240395805
- Publication date Nov 28, 2024
- Cambridge GaN Devices Limited
- Florin UDREA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS
- Publication number 20240387620
- Publication date Nov 21, 2024
- Wolfspeed, Inc.
- Kijeong Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE BALANCE SEMICONDUCTOR DEVICE, IN PARTICULAR FOR HIGH EFFICIE...
- Publication number 20240379742
- Publication date Nov 14, 2024
- STMicroelectronics S.r.l.
- Antonino SCHILLACI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...
- Publication number 20240379824
- Publication date Nov 14, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...
- Publication number 20240371928
- Publication date Nov 7, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240371929
- Publication date Nov 7, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Hao CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240372012
- Publication date Nov 7, 2024
- Rohm Co., Ltd.
- Masatoshi Aketa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE
- Publication number 20240363698
- Publication date Oct 31, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MA...
- Publication number 20240347587
- Publication date Oct 17, 2024
- Fuji Electric Co., Ltd.
- Kensuke TAKENAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS
- Publication number 20240347607
- Publication date Oct 17, 2024
- Nami MOS CO., LTD.
- FU-YUAN HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SUPERJUNCTION TRENCH GATE MOSFET
- Publication number 20240332402
- Publication date Oct 3, 2024
- Hua Hong Semiconductor (Wuxi) Limited
- Zhaozhao XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION MOSFET DEVICE
- Publication number 20240321952
- Publication date Sep 26, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Ping LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20240321951
- Publication date Sep 26, 2024
- DENSO CORPORATION
- RYOTA SUZUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION TRANSISTOR DEVICE
- Publication number 20240321953
- Publication date Sep 26, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240313109
- Publication date Sep 19, 2024
- Kabushiki Kaisha Toshiba
- Katsuhisa TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240304716
- Publication date Sep 12, 2024
- Fuji Electric Co., Ltd.
- Yoshihito ICHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT
- Publication number 20240297214
- Publication date Sep 5, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Fei Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER
- Publication number 20240290830
- Publication date Aug 29, 2024
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...
- Publication number 20240290880
- Publication date Aug 29, 2024
- ROBERT BOSCH GmbH
- Daniel Krebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT
- Publication number 20240282813
- Publication date Aug 22, 2024
- Applied Materials, Inc.
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, RELATED CIRCUIT, CHIP, ELECTRONIC DEVICE, AND...
- Publication number 20240282767
- Publication date Aug 22, 2024
- Huawei Digital Power Technologies Co., Ltd.
- Wentao Yang
- H01 - BASIC ELECTRIC ELEMENTS

Multiple reduced surface field (multi-RESURF) structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

LDMOS with polysilicon deep drain

Super junction silicon carbide semiconductor device and manufacturi...

Power transistor cell and power transistor having field shielding c...

Super junction power device and method of making the same

Super junction power device

Super junction device and method for making the same

Super junction power device and method of making the same

Semiconductor device

SiC devices with shielding structure

Power semiconductor device having vertically parallel p-n layers fo...

Charge-balance power device, and process for manufacturing the char...

SiC-mosfet

Schottky rectifier with surge-current ruggedness

Vertical string driver with extended gate junction structure

Method of manufacturing a semiconductor device utilzing two hard ma...

Method of fabricating super-junction based vertical gallium nitride...

Self-balancing super junction structure and preparation method thereof

Gradient doping epitaxy in superjunction to improve breakdown voltage

Semiconductor device and method for manufacturing same

Semiconductor device

Charge balance semiconductor device, in particular for high efficie...

Method of manufacturing a super junction structure and super juncti...

Superjunction transistor device and method for forming a superjunct...

Semiconductor device having a carrier trapping region including cry...

Core-shell nanofin vertical switch and high-voltage switching

Superjunction semiconductor device and method of manufacturing same

Super junction semiconductor device and method of manufacturing the...

Semiconductor protection device

Half-bridge circuit including integrated level shifter transistor

Semiconductor device and method of manufacturing semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICES WITH SUPERJUNCTIONS

CHARGE-BALANCE POWER DEVICE, AND PROCESS FOR MANUFACTURING THE CHAR...

Semiconductor Device with Compensation Structure

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

Semiconductor Device and Method of Forming MEMS Super-Junction Meta...

SPLIT GATE MOSFET AND MANUFACTURING METHOD THEREOF

POWER SEMICONDUCTOR DEVICE COMPRISING A WIDE BANDGAP SUBSTRATE

SHIELDED GATE TRENCH DEVICES HAVING A PLANARIZED THERAMLLY GROWN IN...

POWER SEMICONDUCTOR DEVICE COMPRISING A SILICON SUBSTRATE

MOSFETS WITH IMPLANTED CHARGE COMPENSATION REGIONS

CHARGE BALANCE SEMICONDUCTOR DEVICE, IN PARTICULAR FOR HIGH EFFICIE...

METHOD FOR MAKING DMOS DEVICES INCLUDING A SUPERLATTICE AND FIELD P...

METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DEVICE

SIC SHIELDED GATE TRENCH MOSFET WITH IMPROVED PERFORMANCE

SUPERJUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MA...

SHIELDED GATE TRENCH DEVICES HAVING SHORT CHANNELS

METHOD FOR MANUFACTURING SUPERJUNCTION TRENCH GATE MOSFET

SUPER-JUNCTION MOSFET DEVICE

FIELD EFFECT TRANSISTOR

SUPERJUNCTION TRANSISTOR DEVICE

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT

SILICON CARBIDE SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERTER

METHOD FOR PRODUCING A VERTICAL FIELD-EFFECT TRANSISTOR STRUCTURE A...

SILICON SUPER JUNCTION STRUCTURES FOR INCREASED THROUGHPUT

SEMICONDUCTOR DEVICE, RELATED CIRCUIT, CHIP, ELECTRONIC DEVICE, AND...