Multiple reduced surface field (multi-RESURF) structures

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CPC
H01L29/0634

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0634Multiple reduced surface field (multi-RESURF) structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Manufacturing method of semiconductor super-junction device
- Patent number 11,973,107
- Issue date Apr 30, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction gated AlGaN GaN HEMT
- Patent number 11,973,134
- Issue date Apr 30, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,955,513
- Issue date Apr 9, 2024
- NISSHINBO MICRO DEVICES INC.
- Makoto Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction transistor device
- Patent number 11,929,395
- Issue date Mar 12, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor super-junction power device
- Patent number 11,908,889
- Issue date Feb 20, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD.
- Yi Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 11,894,445
- Issue date Feb 6, 2024
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device
- Patent number 11,888,024
- Issue date Jan 30, 2024
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an insulation layer in a semiconductor body and...
- Patent number 11,869,966
- Issue date Jan 9, 2024
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...
- Patent number 11,862,675
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Karthick Murukesan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device and method of manufacturing the...
- Patent number 11,855,136
- Issue date Dec 26, 2023
- DB HITEK CO., LTD.
- Ji Eun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOSFET having a semiconductor base substrat...
- Patent number 11,843,048
- Issue date Dec 12, 2023
- Shindengen Electric Manufacturing Co., Ltd.
- Daisuke Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for reducing switching loss and manufacturing...
- Patent number 11,837,630
- Issue date Dec 5, 2023
- WUXI NCE POWER CO., LTD
- Yuanzheng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of fabricating the same
- Patent number 11,830,914
- Issue date Nov 28, 2023
- Hyundai Mobis Co., Ltd.
- Jeong Mok Ha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,830,945
- Issue date Nov 28, 2023
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super-junction based vertical gallium nitride...
- Patent number 11,824,086
- Issue date Nov 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Channeled implants for SiC MOSFET fabrication
- Patent number 11,804,537
- Issue date Oct 31, 2023
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction power semiconductor devices formed via ion implantati...
- Patent number 11,791,378
- Issue date Oct 17, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC trench MOSFET with low on-resistance and switching loss
- Patent number 11,777,000
- Issue date Oct 3, 2023
- NAMI MOS CO., LTD.
- Fu-Yuan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation region and method of manuf...
- Patent number 11,764,063
- Issue date Sep 19, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for junction termination of wide band gap super...
- Patent number 11,764,257
- Issue date Sep 19, 2023
- General Electric Company
- Stephen Daley Arthur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,756,994
- Issue date Sep 12, 2023
- Nissan Motor Co., Ltd.
- Toshiharu Marui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 11,757,001
- Issue date Sep 12, 2023
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT light load efficiency
- Patent number 11,756,993
- Issue date Sep 12, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,756,791
- Issue date Sep 12, 2023
- Kabushiki Kaisha Toshiba
- Shingo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split trench gate super junction power device
- Patent number 11,728,421
- Issue date Aug 15, 2023
- Semiconductor Components Industries, LLC
- Wonhwa Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated planar-trench gate power MOSFET
- Patent number 11,728,423
- Issue date Aug 15, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky rectifier with surge-current ruggedness
- Patent number 11,715,804
- Issue date Aug 1, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrei Konstantinov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power device and method of making the same
- Patent number 11,715,758
- Issue date Aug 1, 2023
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistors with breakdown voltage clamps
- Patent number 11,705,485
- Issue date Jul 18, 2023
- Maxim Integrated Products, Inc.
- Vijay Parthasarathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a high breakdown voltage
- Patent number 11,682,696
- Issue date Jun 20, 2023
- Infineon Technologies Dresden GmbH & Co. KG
- Ahmed Mahmoud
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPER JUNCTION TRENCH MOSFET AND METHOD FOR PREPARING SAME
- Publication number 20240145534
- Publication date May 2, 2024
- Alkaid-Semi Technologies (Shanghai) Co.,Ltd
- Kaiyu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136394
- Publication date Apr 25, 2024
- POWER MASTER SEMICONDUCTOR CO., LTD.
- Chang Ju LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SUPERJUNCTION DEVICE
- Publication number 20240128356
- Publication date Apr 18, 2024
- Infineon Technologies Austria AG
- Daniel Tutuc
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TERMINATION STRUCTURES
- Publication number 20240128369
- Publication date Apr 18, 2024
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...
- Publication number 20240105767
- Publication date Mar 28, 2024
- NEXGEN POWER SYSTEMS, INC.
- Hao Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240097019
- Publication date Mar 21, 2024
- HON HAI PRECISION INDUSTRY CO., LTD.
- Yi-Kai HSIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WI...
- Publication number 20240096936
- Publication date Mar 21, 2024
- GENERAL ELECTRIC COMPANY
- Collin William Hitchcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...
- Publication number 20240096938
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...
- Publication number 20240096939
- Publication date Mar 21, 2024
- DB HITEK CO., LTD.
- Ji Eun LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND...
- Publication number 20240097020
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Tatsuo SHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...
- Publication number 20240096937
- Publication date Mar 21, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFA...
- Publication number 20240079445
- Publication date Mar 7, 2024
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jiakun Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SEMICONDUCTOR DEVICE
- Publication number 20240072108
- Publication date Feb 29, 2024
- Rohm Co., Ltd.
- Yuki NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...
- Publication number 20240072159
- Publication date Feb 29, 2024
- Manoj Chandrika Reghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240072167
- Publication date Feb 29, 2024
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240055306
- Publication date Feb 15, 2024
- Mitsubishi Electric Corporation
- Yuichi NAGAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS
- Publication number 20240047516
- Publication date Feb 8, 2024
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Vincenzo Lordi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...
- Publication number 20240047517
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR...
- Publication number 20240047577
- Publication date Feb 8, 2024
- Semiconductor Components Industries, LLC
- Arash ELHAMI KHORASANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION MOSFET DEVICE
- Publication number 20240038837
- Publication date Feb 1, 2024
- CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO., LTD.
- Tian LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FABRICATING CROSS-PILLAR SUPERJUNCTION STRU...
- Publication number 20240038836
- Publication date Feb 1, 2024
- GENERAL ELECTRIC COMPANY
- Collin William Hitchcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERFUNCTION MOSFETS HAVING SHIELDED GATE TRENCH STRUCTURES
- Publication number 20240030280
- Publication date Jan 25, 2024
- Nami MOS CO., LTD.
- Fu-Yuan HSIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HETEROJUNCTION SCHOTTKY DIODE
- Publication number 20240030356
- Publication date Jan 25, 2024
- The Penn State Research Foundation
- Sang-Woo Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240021723
- Publication date Jan 18, 2024
- Fuji Electric Co., Ltd.
- Tomohiro MORIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-ß BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20240006477
- Publication date Jan 4, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Yongshun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS
- Publication number 20230411536
- Publication date Dec 21, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Andrei KONSTANTINOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS
- Publication number 20230411448
- Publication date Dec 21, 2023
- Mitsubishi Electric Corporation
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFE...
- Publication number 20230411447
- Publication date Dec 21, 2023
- K.EKLUND INNOVATION
- Klas-Håkan EKLUND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20230411449
- Publication date Dec 21, 2023
- DENSO CORPORATION
- YUICHIRO MATSUURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR REDUCING SWITCHING LOSS AND MANUFACTURING...
- Publication number 20230395651
- Publication date Dec 7, 2023
- WUXI NCE POWER CO., LTD
- Yuanzheng ZHU
- H01 - BASIC ELECTRIC ELEMENTS

Multiple reduced surface field (multi-RESURF) structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Manufacturing method of semiconductor super-junction device

Super junction gated AlGaN GaN HEMT

Semiconductor device

Superjunction transistor device

Semiconductor super-junction power device

Method for producing a superjunction device

Method of forming a semiconductor device

Method for forming an insulation layer in a semiconductor body and...

High voltage metal-oxide-semiconductor (HVMOS) device integrated wi...

Super junction semiconductor device and method of manufacturing the...

Method of manufacturing MOSFET having a semiconductor base substrat...

Semiconductor device for reducing switching loss and manufacturing...

Power semiconductor device and method of fabricating the same

Semiconductor device

Method of fabricating super-junction based vertical gallium nitride...

Channeled implants for SiC MOSFET fabrication

Superjunction power semiconductor devices formed via ion implantati...

SiC trench MOSFET with low on-resistance and switching loss

Silicon carbide device with compensation region and method of manuf...

Systems and methods for junction termination of wide band gap super...

Semiconductor device and method of manufacturing semiconductor device

Radiation hardened high voltage superjunction MOSFET

IGBT light load efficiency

Semiconductor device and method for manufacturing the same

Split trench gate super junction power device

Integrated planar-trench gate power MOSFET

Schottky rectifier with surge-current ruggedness

Super junction power device and method of making the same

LDMOS transistors with breakdown voltage clamps

Semiconductor device having a high breakdown voltage

Patents Applicationslast 30 patents

SUPER JUNCTION TRENCH MOSFET AND METHOD FOR PREPARING SAME

SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING A SUPERJUNCTION DEVICE

SHIELDED GATE TRENCH MOSFETS WITH IMPROVED TERMINATION STRUCTURES

METHOD OF FABRICATING SUPER-JUNCTION BASED VERTICAL GALLIUM NITRIDE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SYSTEMS AND METHODS FOR PILLAR EXTENSION IN TERMINATION AREAS OF WI...

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE,...

SUPER JUNCTION SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE...

SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND...

POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...

SUPER-JUNCTION MOS DEVICE WITH INTEGRATED TMBS STRUCTURE AND MANUFA...

SIC SEMICONDUCTOR DEVICE

SILICON-ON-INSULATOR (SOI) DEVICE HAVING VARIABLE THICKNESS DEVICE...

SEMICONDUCTOR DEVICE

MANUFACTURING METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

SUPERJUNCTION DEVICES FORMED BY FIELD ASSISTED DIFFUSION OF DOPANTS

POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...

SEMICONDUCTOR STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR...

SUPER JUNCTION MOSFET DEVICE

SYSTEMS AND METHODS FOR FABRICATING CROSS-PILLAR SUPERJUNCTION STRU...

SUPERFUNCTION MOSFETS HAVING SHIELDED GATE TRENCH STRUCTURES

SUPER-HETEROJUNCTION SCHOTTKY DIODE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SUPER-ß BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREFOR

SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS

SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS

SEMICONDUCTOR DEVICE COMPRISING A LATERAL SUPER JUNCTION FIELD EFFE...

FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE FOR REDUCING SWITCHING LOSS AND MANUFACTURING...