Nanofluidic transistor

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H01L2924/1308

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00

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H01L2924/1308Nanofluidic transistor

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Patents Grantslast 30 patents

Information Patent Grant
Tri-gate orthogonal channel transistor and methods of forming the same
- Patent number 12,015,065
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 11,957,017
- Issue date Apr 9, 2024
- SHARP KABUSHIKI KAISHA
- Takayuki Nishiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-gate orthogonal channel transistor and methods of forming the same
- Patent number 11,916,121
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,894,379
- Issue date Feb 6, 2024
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state image pickup apparatus and electronic equipment
- Patent number 11,804,500
- Issue date Oct 31, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Ammo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-protrusion transfer gate structure
- Patent number 11,521,997
- Issue date Dec 6, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Huei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 11,367,723
- Issue date Jun 21, 2022
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistor and method of man...
- Patent number 11,222,959
- Issue date Jan 11, 2022
- HRL Laboratories, LLC
- Jeong-Sun Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire stack GAA device and methods for producing the same
- Patent number 11,201,243
- Issue date Dec 14, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chansyun David Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of formation
- Patent number 11,171,212
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state image pickup apparatus and electronic equipment
- Patent number 11,121,158
- Issue date Sep 14, 2021
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Ammo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and method of manufacturing the same
- Patent number 10,923,476
- Issue date Feb 16, 2021
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with multi-gate structure and method of manuf...
- Patent number 10,431,585
- Issue date Oct 1, 2019
- Samsung Electronics Co., Ltd.
- Jung-Gil Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of formation
- Patent number 10,269,902
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of formation
- Patent number 9,853,105
- Issue date Dec 26, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multigate resonant channel transistor
- Patent number 9,294,035
- Issue date Mar 22, 2016
- Intel Corporation
- Sasikanth Manipatruni
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Self-aligned metal gate CMOS with metal base layer and dummy gate s...
- Patent number 9,269,634
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage tunable oscillator using bilayer graphene and a lead zircon...
- Patent number 9,252,704
- Issue date Feb 2, 2016
- The United States of America as represented by the Secretary of the Army
- Osama M. Nayfeh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Graphene based field effect transistor
- Patent number 9,184,270
- Issue date Nov 10, 2015
- IMEC
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRI-GATE ORTHOGONAL CHANNEL TRANSISTOR AND METHODS OF FORMING THE SAME
- Publication number 20240290856
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT
- Publication number 20240096915
- Publication date Mar 21, 2024
- Sony Semiconductor Solutions Corporation
- HIROAKI AMMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20240071941
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Fa Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRI-GATE ORTHOGONAL CHANNEL TRANSISTOR AND METHODS OF FORMING THE SAME
- Publication number 20230369429
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Katherine H. CHIANG
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-PROTRUSION TRANSFER GATE MANUFACTURING METHOD
- Publication number 20230078927
- Publication date Mar 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Huei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROMAGNETIC RADIATION DETECTION METHOD
- Publication number 20220359590
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Huei LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT
- Publication number 20210343767
- Publication date Nov 4, 2021
- Sony Semiconductor Solutions Corporation
- HIROAKI AMMO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190363086
- Publication date Nov 28, 2019
- SAMSUNG ELECTRONICS CO., LTD.
- JUNG-GIL YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMATION
- Publication number 20190319101
- Publication date Oct 17, 2019
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON CONTACT SEMICONDUCTOR DEVICE PACKAGE
- Publication number 20180182730
- Publication date Jun 28, 2018
- Infineon Technologies Americas Corp.
- Eung San Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMATION
- Publication number 20180122909
- Publication date May 3, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHENE BASED FIELD EFFECT TRANSISTOR
- Publication number 20140299841
- Publication date Oct 9, 2014
- Amirhasan Nourbakhsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIGATE RESONANT CHANNEL TRANSISTOR
- Publication number 20140292429
- Publication date Oct 2, 2014
- Sasikanth Manipatruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELF ALIGNED METAL GATE CMOS
- Publication number 20130012009
- Publication date Jan 10, 2013
- International Business Machines Corporation (YT)
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage tunable oscillator using bilayer graphene and a lead zircon...
- Publication number 20120293271
- Publication date Nov 22, 2012
- Osama M. Nayfeh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD FOR SELF-ALIGNED METAL GATE CMOS
- Publication number 20120292710
- Publication date Nov 22, 2012
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Nanofluidic transistor

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Tri-gate orthogonal channel transistor and methods of forming the same

Display device

Tri-gate orthogonal channel transistor and methods of forming the same

Semiconductor devices and method of manufacturing the same

Solid-state image pickup apparatus and electronic equipment

Multi-protrusion transfer gate structure

Semiconductor devices and method of manufacturing the same

Metal oxide semiconductor field effect transistor and method of man...

Nanowire stack GAA device and methods for producing the same

Semiconductor device and method of formation

Solid-state image pickup apparatus and electronic equipment

Semiconductor devices and method of manufacturing the same

Semiconductor devices with multi-gate structure and method of manuf...

Semiconductor device and method of formation

Semiconductor device and method of formation

Multigate resonant channel transistor

Self-aligned metal gate CMOS with metal base layer and dummy gate s...

Voltage tunable oscillator using bilayer graphene and a lead zircon...

Graphene based field effect transistor

Patents Applicationslast 30 patents

TRI-GATE ORTHOGONAL CHANNEL TRANSISTOR AND METHODS OF FORMING THE SAME

SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT

SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF

TRI-GATE ORTHOGONAL CHANNEL TRANSISTOR AND METHODS OF FORMING THE SAME

MULTI-PROTRUSION TRANSFER GATE MANUFACTURING METHOD

ELECTROMAGNETIC RADIATION DETECTION METHOD

SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC EQUIPMENT

SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMATION

COMMON CONTACT SEMICONDUCTOR DEVICE PACKAGE

SEMICONDUCTOR DEVICE AND METHOD OF FORMATION

GRAPHENE BASED FIELD EFFECT TRANSISTOR

MULTIGATE RESONANT CHANNEL TRANSISTOR

METHOD FOR SELF ALIGNED METAL GATE CMOS

Voltage tunable oscillator using bilayer graphene and a lead zircon...

METHOD FOR SELF-ALIGNED METAL GATE CMOS