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H01L29/0852

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0852of DMOS transistors

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Patents Grantslast 30 patents

Information Patent Grant
Transistor device with buffered drain
- Patent number 11,876,134
- Issue date Jan 16, 2024
- Texas Instruments Incorporated
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a silicon carbide semiconductor component
- Patent number 11,855,147
- Issue date Dec 26, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor devices
- Patent number 11,855,200
- Issue date Dec 26, 2023
- LEADTREND TECHNOLOGY CORPORATION
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor
- Patent number 11,791,382
- Issue date Oct 17, 2023
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,710,772
- Issue date Jul 25, 2023
- Samsung Electronics Co., Ltd.
- Eunhye Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing insulated gate semiconductor device with in...
- Patent number 11,631,765
- Issue date Apr 18, 2023
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,527,615
- Issue date Dec 13, 2022
- Hitachi, Ltd.
- Takeru Suto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor
- Patent number 11,462,617
- Issue date Oct 4, 2022
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,211,457
- Issue date Dec 28, 2021
- Samsung Electronics Co., Ltd.
- Eunhye Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of self-aligned DMOS body pickup
- Patent number 11,069,777
- Issue date Jul 20, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor component comprising trench gate stru...
- Patent number 11,043,560
- Issue date Jun 22, 2021
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device with injuction supression struc...
- Patent number 10,937,901
- Issue date Mar 2, 2021
- Fuji Electric Co., Ltd.
- Akimasa Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layout structure including asymmetrical channel region
- Patent number 10,825,898
- Issue date Nov 3, 2020
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,727,300
- Issue date Jul 28, 2020
- MagnaChip Semiconductor, Ltd.
- Guk Hwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of dynamic switching current in high-speed logic
- Patent number 10,673,435
- Issue date Jun 2, 2020
- NXP USA, INC.
- Emmanuel Chukwuma Onyema
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices
- Patent number 10,608,106
- Issue date Mar 31, 2020
- University of Electronic Science and Technology of China
- Ming Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device and semiconductor layout structure including asym...
- Patent number 10,559,661
- Issue date Feb 11, 2020
- NANYA TECHNOLOGY CORPORATION
- Jhen-Yu Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET
- Patent number 10,347,757
- Issue date Jul 9, 2019
- Taiwan Semiconductor Manufaturing Company, Ltd.
- Huei-Ru Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 10,269,958
- Issue date Apr 23, 2019
- Samsung Electronics Co., Ltd.
- Jae Hong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET
- Patent number 10,147,814
- Issue date Dec 4, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huei-Ru Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS finFET structures with multiple gate structures
- Patent number 10,121,878
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Jerome Ciavatti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 9,978,865
- Issue date May 22, 2018
- Samsung Electronics Co., Ltd.
- Jae Hong Kwon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,887,301
- Issue date Feb 6, 2018
- Renesas Electric Corporation
- Hideki Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET having source region formed in a double wells region
- Patent number 9,653,459
- Issue date May 16, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused metal oxide semiconductor device and manufa...
- Patent number 9,484,437
- Issue date Nov 1, 2016
- Richtek Technology Corporation
- Tsung-Yi Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage electrostatic discharge device incorporating a metal-o...
- Patent number 9,418,981
- Issue date Aug 16, 2016
- Macronix International Co., Ltd.
- Hsin-Liang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device termination structures and methods
- Patent number 9,362,394
- Issue date Jun 7, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Moaniss Zitouni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 9,130,033
- Issue date Sep 8, 2015
- Vanguard International Semiconductor Corporation
- Manoj Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage and ultra-high voltage semiconductor devices with incr...
- Patent number 9,035,379
- Issue date May 19, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ker Hsiao Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage and ultra-high voltage semiconductor devices with incr...
- Patent number 8,803,232
- Issue date Aug 12, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ker Hsiao Huo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO IMPLANT P-TYPE AND/OR N-TYPE RINGS IN A SEMICONDUCTOR DEVICE
- Publication number 20240405124
- Publication date Dec 5, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Yu-Chun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...
- Publication number 20240234566
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LING MEI LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH BUFFERED DRAIN
- Publication number 20240105840
- Publication date Mar 28, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE
- Publication number 20230420554
- Publication date Dec 28, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Yong-Sheng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20230395663
- Publication date Dec 7, 2023
- INFINEON TECHNOLOGIES AG
- Thomas Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR TRANSISTOR INCLUDING A RE...
- Publication number 20230299195
- Publication date Sep 21, 2023
- ALLEGRO MICROSYSTEMS, LLC
- Thomas S. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH BUFFERED DRAIN
- Publication number 20230101691
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR
- Publication number 20230013532
- Publication date Jan 19, 2023
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor Having Improved Layout
- Publication number 20220393010
- Publication date Dec 8, 2022
- Ampleon Netherlands B.V.
- Patrick Valk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-Voltage Semiconductor Devices
- Publication number 20220231165
- Publication date Jul 21, 2022
- Leadtrend Technology Corporation
- Tsung-Yi HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220115500
- Publication date Apr 14, 2022
- Samsung Electronics Co., Ltd.
- Eunhye CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-POWER FIELD-EFFECT TRANSISTOR (FET)
- Publication number 20220093740
- Publication date Mar 24, 2022
- QUALCOMM Incorporated
- Abhijeet PAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT
- Publication number 20210273054
- Publication date Sep 2, 2021
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...
- Publication number 20210193805
- Publication date Jun 24, 2021
- Monolithic Power Systems, Inc.
- Ji-Hyoung Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210143255
- Publication date May 13, 2021
- Hitachi, Ltd
- Takeru SUTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING INSULATED GATE SEMICONDUCTOR DEVICE WITH IN...
- Publication number 20210119040
- Publication date Apr 22, 2021
- Fuji Electric Co., Ltd.
- Akimasa KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200395445
- Publication date Dec 17, 2020
- Samsung Electronics Co., Ltd.
- Eunhye CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR
- Publication number 20200350406
- Publication date Nov 5, 2020
- Tso-Tung Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF DYNAMIC SWITCHING CURRENT IN HIGH-SPEED LOGIC
- Publication number 20200136619
- Publication date Apr 30, 2020
- NXP USA, Inc.
- Emmanuel Chukwuma Onyema
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR LAYOUT STRUCTURE INCLUDING ASYMMETRICAL CHANNEL REGION
- Publication number 20200127094
- Publication date Apr 23, 2020
- NANYA TECHNOLOGY CORPORATION
- JHEN-YU TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET Having Drain Region Formed Between Two Gate Electrodes with...
- Publication number 20200006489
- Publication date Jan 2, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsueh-Liang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20190288104
- Publication date Sep 19, 2019
- Fuji Electric Co., Ltd.
- Akimasa KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES
- Publication number 20190237576
- Publication date Aug 1, 2019
- University of Electronic Science and Technology of China
- Ming QIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE AND SEMICONDUCTOR LAYOUT STRUCTURE
- Publication number 20190172909
- Publication date Jun 6, 2019
- NANYA TECHNOLOGY CORPORATION
- JHEN-YU TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Semiconductor Component Comprising Trench Gate Stru...
- Publication number 20190172910
- Publication date Jun 6, 2019
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET
- Publication number 20190074375
- Publication date Mar 7, 2019
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huei-Ru Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20190019866
- Publication date Jan 17, 2019
- Magnachip Semiconductor, Ltd.
- Guk Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20180219094
- Publication date Aug 2, 2018
- Samsung Electronics Co., Ltd.
- Jae Hong KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MOSFET
- Publication number 20170288054
- Publication date Oct 5, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huei-Ru Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20170194493
- Publication date Jul 6, 2017
- Samsung Electronics Co., Ltd.
- Jae Hong KWON
- H01 - BASIC ELECTRIC ELEMENTS

of DMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Transistor device with buffered drain

Method for producing a silicon carbide semiconductor component

High-voltage semiconductor devices

Power semiconductor

Semiconductor device

Method of manufacturing insulated gate semiconductor device with in...

Semiconductor device

Power semiconductor

Semiconductor device

Manufacturing method of self-aligned DMOS body pickup

Silicon carbide semiconductor component comprising trench gate stru...

Insulated gate semiconductor device with injuction supression struc...

Semiconductor layout structure including asymmetrical channel region

Semiconductor device and manufacturing method thereof

Reduction of dynamic switching current in high-speed logic

Power semiconductor devices

Transistor device and semiconductor layout structure including asym...

Lateral MOSFET

Semiconductor device and method of fabricating the same

Lateral MOSFET

LDMOS finFET structures with multiple gate structures

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing the same

MOSFET having source region formed in a double wells region

Lateral double diffused metal oxide semiconductor device and manufa...

High-voltage electrostatic discharge device incorporating a metal-o...

Power device termination structures and methods

Semiconductor device and method for fabricating the same

High voltage and ultra-high voltage semiconductor devices with incr...

High voltage and ultra-high voltage semiconductor devices with incr...

Patents Applicationslast 30 patents

METHOD TO IMPLANT P-TYPE AND/OR N-TYPE RINGS IN A SEMICONDUCTOR DEVICE

METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING T...

TRANSISTOR DEVICE WITH BUFFERED DRAIN

SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURE

METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR TRANSISTOR INCLUDING A RE...

TRANSISTOR DEVICE WITH BUFFERED DRAIN

POWER SEMICONDUCTOR

Field-Effect Transistor Having Improved Layout

High-Voltage Semiconductor Devices

SEMICONDUCTOR DEVICE

HIGH-POWER FIELD-EFFECT TRANSISTOR (FET)

METHOD FOR PRODUCING A SILICON CARBIDE SEMICONDUCTOR COMPONENT

LATERAL TRANSISTOR WITH LATERAL CONDUCTIVE FIELD PLATE OVER A FIELD...

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING INSULATED GATE SEMICONDUCTOR DEVICE WITH IN...

SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR

REDUCTION OF DYNAMIC SWITCHING CURRENT IN HIGH-SPEED LOGIC

SEMICONDUCTOR LAYOUT STRUCTURE INCLUDING ASYMMETRICAL CHANNEL REGION

MOSFET Having Drain Region Formed Between Two Gate Electrodes with...

INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

POWER SEMICONDUCTOR DEVICES

TRANSISTOR DEVICE AND SEMICONDUCTOR LAYOUT STRUCTURE

Silicon Carbide Semiconductor Component Comprising Trench Gate Stru...

Lateral MOSFET

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Lateral MOSFET

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME