on sidewalls of dielectric structures

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CPC
H01L45/124

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/124on sidewalls of dielectric structures

Industries

Patents Grantslast 30 patents

Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,641,749
- Issue date May 2, 2023
- Samsung Electronics Co., Ltd.
- Dong Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive interface material
- Patent number 11,641,788
- Issue date May 2, 2023
- Micron Technology, Inc.
- Andrea Gotti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and device including memristor material
- Patent number 11,631,808
- Issue date Apr 18, 2023
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device, memory cell and method of forming the same
- Patent number 11,594,576
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 11,587,977
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Dong-Jun Seong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and manufacturing method of the same
- Patent number 11,563,172
- Issue date Jan 24, 2023
- SK hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tapered memory cell profiles
- Patent number 11,545,625
- Issue date Jan 3, 2023
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a resistive random access memory structure
- Patent number 11,538,990
- Issue date Dec 27, 2022
- United Microelectronics Corp.
- Wen-Jen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resetting method of resistive random access memory
- Patent number 11,538,525
- Issue date Dec 27, 2022
- Winbond Electronics Corp.
- Ping-Kun Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,527,714
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory devices
- Patent number 11,515,475
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Curtis Chun-I Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a passive material between memory c...
- Patent number 11,515,358
- Issue date Nov 29, 2022
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having an oxide barrier layer
- Patent number 11,508,905
- Issue date Nov 22, 2022
- 4DS MEMORY, LIMITED
- Seshubabu Desu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of forming the same
- Patent number 11,502,128
- Issue date Nov 15, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-I Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of manufacturing the same
- Patent number 11,456,414
- Issue date Sep 27, 2022
- Samsung Electronics Co., Ltd.
- Jonguk Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method of manufacturing electronic device
- Patent number 11,450,711
- Issue date Sep 20, 2022
- SK Hynix Inc.
- Bong Hoon Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of selector on confined phase change memory
- Patent number 11,437,571
- Issue date Sep 6, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,437,573
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory cell with switching layer comprising one or more d...
- Patent number 11,430,951
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fa-Shen Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,411,178
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-doped data storage structure configured to improve resistive...
- Patent number 11,404,638
- Issue date Aug 2, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Selector devices with integrated barrier materials
- Patent number 11,404,639
- Issue date Aug 2, 2022
- Intel Corporation
- Elijah V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure to improve RRAM performance
- Patent number 11,329,221
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Ting Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current delivery and spike mitigation in a memory cell array
- Patent number 11,322,546
- Issue date May 3, 2022
- Intel Corporation
- Shafqat Ahmed
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory and manufacturing method thereof
- Patent number 11,316,106
- Issue date Apr 26, 2022
- Winbond Electronics Corp.
- Chung-Hsuan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,289,647
- Issue date Mar 29, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER
- Publication number 20240130255
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert Viktor Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20230397514
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230389338
- Publication date Nov 30, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...
- Publication number 20230371407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Watson Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230329009
- Publication date Oct 12, 2023
- WINBOND ELECTRONICS CORP.
- Chi-Ching Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...
- Publication number 20230240084
- Publication date Jul 27, 2023
- SK HYNIX INC.
- In Ku KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES HAVING AN ELECTRODE WITH AN EXTENSION
- Publication number 20230217843
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- JIANXUN SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20230209840
- Publication date Jun 29, 2023
- Changxin Memory Technologies, Inc.
- Qingsong DU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20230165174
- Publication date May 25, 2023
- Samsung Electronics Co., Ltd.
- Changyup Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE BASED ON NANO CURRENT CHANNEL
- Publication number 20230099931
- Publication date Mar 30, 2023
- HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Xiaomin CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE DEVICE
- Publication number 20230093157
- Publication date Mar 23, 2023
- KIOXIA Corporation
- Shigeyuki HIRAYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20230090628
- Publication date Mar 23, 2023
- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Chun-Chieh MO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND PROJECTION LINER FOR AI DEVICE
- Publication number 20230070462
- Publication date Mar 9, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME
- Publication number 20230065500
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20230065317
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...
- Publication number 20230029529
- Publication date Feb 2, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
- Publication number 20230027508
- Publication date Jan 26, 2023
- United Microelectronics Corp.
- Kai Jiun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES HAVING AN ELECTRODE WITH TAPERED SIDES
- Publication number 20220416158
- Publication date Dec 29, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220399490
- Publication date Dec 15, 2022
- WINBOND ELECTRONICS CORP.
- Frederick Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...
- Publication number 20220399493
- Publication date Dec 15, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE
- Publication number 20220392959
- Publication date Dec 8, 2022
- SK HYNIX INC.
- Bong Hoon JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS
- Publication number 20220384722
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Thomas M. Graettinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES
- Publication number 20220384723
- Publication date Dec 1, 2022
- Micron Technology, Inc.
- Lorenzo Fratin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF SELECTOR ON CONFINED PHASE CHANGE MEMORY
- Publication number 20220367797
- Publication date Nov 17, 2022
- International Business Machines Corporation
- Wanki Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220367806
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220367800
- Publication date Nov 17, 2022
- DB HITEK CO., LTD.
- Hyun Chan JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
- Publication number 20220367801
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF M...
- Publication number 20220344582
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Chao Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE
- Publication number 20220344585
- Publication date Oct 27, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Chun-Chieh MO
- H01 - BASIC ELECTRIC ELEMENTS

on sidewalls of dielectric structures

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Two-terminal reversibly switchable memory device

Semiconductor device and method for fabricating the same

Resistive interface material

System and device including memristor material

Resistive random access memory device

Semiconductor device, memory cell and method of forming the same

Diffusion barrier layer in programmable metallization cell

Memory device and method of manufacturing the same

Variable resistance memory device and manufacturing method of the same

Tapered memory cell profiles

Method for manufacturing a resistive random access memory structure

Resetting method of resistive random access memory

Buffer layer in memory cell to prevent metal redeposition

Resistive random access memory device

Resistive random access memory devices

Semiconductor devices including a passive material between memory c...

Resistive memory device having an oxide barrier layer

Memory device and method of forming the same

Variable resistance memory device and method of manufacturing the same

Electronic device and method of manufacturing electronic device

Integration of selector on confined phase change memory

Semiconductor device and method for manufacturing the same

Resistive memory cell with switching layer comprising one or more d...

Resistive random access memory device

Multi-doped data storage structure configured to improve resistive...

Selector devices with integrated barrier materials

Electrode structure to improve RRAM performance

Current delivery and spike mitigation in a memory cell array

Resistive random access memory and manufacturing method thereof

Resistive random access memory device

Patents Applicationslast 30 patents

STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER

TUNABLE RESISTIVE RANDOM ACCESS MEMORY CELL

RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

RESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE RESISTIVE M...

SEMICONDUCTOR MEMORY DEVICES HAVING AN ELECTRODE WITH AN EXTENSION

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICES

PHASE CHANGE MEMORY DEVICE BASED ON NANO CURRENT CHANNEL

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

STORAGE DEVICE

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE

WRAP-AROUND PROJECTION LINER FOR AI DEVICE

SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME

MEMORY DEVICES AND METHODS OF MAKING THE SAME

DEVICES INCLUDING A PASSIVE MATERIAL BETWEEN MEMORY CELLS AND CONDU...

RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF

MEMORY DEVICES HAVING AN ELECTRODE WITH TAPERED SIDES

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PHASE CHANGE MEMORY CELL WITH AN AIRGAP TO ALLOW FOR THE EXPANSION...

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE

MEMORY DEVICE WITH LATERALLY FORMED MEMORY CELLS

SIDEWALL STRUCTURES FOR MEMORY CELLS IN VERTICAL STRUCTURES

INTEGRATION OF SELECTOR ON CONFINED PHASE CHANGE MEMORY

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL

MEMORY CELL, SEMICONDUCTOR DEVICE HAVING THE SAME, AND METHODS OF M...

NOVEL RESISTIVE RANDOM ACCESS MEMORY DEVICE